公开(公告)号：US6153013A

公开(公告)日：2000-11-28

申请号：US800512

申请日：1997-02-14

申请人： Akira Sakai ,  Shotaro Okabe ,  Masahiro Kanai ,  Yuzo Kohda ,  Tadashi Hori ,  Tomonori Nishimoto ,  Takahiro Yajima

发明人： Akira Sakai ,  Shotaro Okabe ,  Masahiro Kanai ,  Yuzo Kohda ,  Tadashi Hori ,  Tomonori Nishimoto ,  Takahiro Yajima

IPC分类号： C23C16/44 ,  C23C16/54 ,  H01L31/0392 ,  H01L31/20 ,  C23C16/06

CPC分类号： C23C16/4409 ,  C23C16/44 ,  C23C16/545 ,  H01L31/03921 ,  H01L31/202 ,  H01L31/206 ,  Y02E10/50 ,  Y02P70/521

摘要： The deposited-film-forming apparatus of the present invention is an apparatus for forming deposited films while continuously passing a belt-like member through the insides of a plurality of vacuum chambers connected via connecting members and superposingly forming a plurality of different thin films on the surface of the belt-like member by plasma-assisted CVD, wherein the vacuum chambers are fixed to a stand for supporting the vacuum chambers, and a mechanism for relaxing stress acting in the transport direction of the belt-like member, generated in the vacuum chambers by the action of expansion and contraction due to thermal expansion of the vacuum chambers, is provided between each vacuum chamber and each connecting member.

摘要翻译： 本发明的沉积膜形成装置是一种用于形成沉积膜的装置，同时连续地通过带状构件穿过连接件的多个真空室的内部并在其上重叠地形成多个不同的薄膜 通过等离子体辅助CVD形成带状构件的表面，其中真空室被固定到用于支撑真空室的支架上，以及用于放松在真空中产生的带状构件的传送方向上作用的应力的机构 在每个真空室和每个连接构件之间设置由于真空室的热膨胀而引起的膨胀和收缩的作用的腔室。

公开(公告)号：US5897332A

公开(公告)日：1999-04-27

申请号：US717629

申请日：1996-09-23

申请人： Tadashi Hori ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Yuzo Kohda ,  Tomonori Nishimoto ,  Takahiro Yajima

发明人： Tadashi Hori ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Yuzo Kohda ,  Tomonori Nishimoto ,  Takahiro Yajima

IPC分类号： H01L31/04 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/206 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A method for manufacturing a photoelectric conversion element containing at least one pin junction, wherein a diffusion preventing layer is provided between an n-type layer and an i-type layer and/or between an i-type layer and a p-type layer, and the diffusion preventing layer is deposited such that deposition temperature differs in its thickness direction.

摘要翻译： 一种制造包含至少一个pin结的光电转换元件的方法，其中在n型层和i型层之间和/或i型层和p型层之间设置有扩散防止层， 并且淀积温度在其厚度方向上不同而沉积扩散防止层。

公开(公告)号：US06530341B1

公开(公告)日：2003-03-11

申请号：US09257027

申请日：1999-02-25

申请人： Yuzo Kohda ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Hori ,  Tomonori Nishimoto ,  Takahiro Yajima

发明人： Yuzo Kohda ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Hori ,  Tomonori Nishimoto ,  Takahiro Yajima

IPC分类号： H05H100

CPC分类号： H01J37/32009 ,  H01J37/32082 ,  H01J37/32541 ,  H01J37/3277 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/50 ,  Y02P70/521

摘要： A deposition apparatus of the present invention is arranged so that a surface area of a radio-frequency power applying cathode electrode disposed in a glow discharge space, in a space in contact with discharge is greater than a surface area of the whole of a ground electrode (anode electrode) including a beltlike member in the discharge space. This structure can maintain the potential (self-bias) of the cathode electrode disposed in the glow discharge space automatically at a positive potential with respect to the ground (anode) electrode including the beltlike member. As a result, the bias is applied in the direction of irradiation of ions with positive charge to a deposit film on the beltlike member, so that the ions existing in the plasma discharge are accelerated more efficiently toward the beltlike member, thereby effectively giving energy to the surface of deposit film by ion bombardment. Accordingly, since the structural relaxation of film is promoted even at relatively high deposition rates, a microcrystal semiconductor film can be formed at the relatively high deposition rates with good efficiency, with high uniformity, and with good reproducibility.

摘要翻译： 本发明的沉积装置被布置成使得设置在辉光放电空间中的与放电接触的空间中的射频施加电极的表面积大于接地电极整体的表面积 （阳极电极），其在放电空间中包括带状构件。该结构可以将设置在辉光放电空间中的阴极的电位（自偏压）自动保持在相对于包括 结果，将带正电荷的离子的照射方向施加到带状构件上的沉积膜上，使得存在于等离子体放电中的离子更有效地朝向带状构件加速，从而有效地 通过离子轰击给沉积膜表面赋予能量。 因此，即使在相对高的沉积速率下也能促进膜的结构弛豫，可以以较高的沉积速率以高的均匀性和高的再现性形成微晶半导体膜。

公开(公告)号：US5919310A

公开(公告)日：1999-07-06

申请号：US610076

申请日：1996-02-29

申请人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Takehito Yoshino ,  Akira Sakai ,  Tadashi Hori

发明人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Takehito Yoshino ,  Akira Sakai ,  Tadashi Hori

IPC分类号： C23C16/54 ,  C23C16/00

CPC分类号： C23C16/545

摘要： A continuous film-forming apparatus includes a plurality of reaction chambers each capable of forming a semiconductor film with a different chemical composition. The reaction chambers are arranged such that a substrate web on which a film is to be formed can be hermetically moved through each of the reaction chambers under a vacuum condition. A gas gate is disposed at a central position between each pair of adjacent reaction chambers, with each gas gate provided with a slit for communication between the adjacent reaction chambers. The slit is provided with a clearance which allows the substrate web to move therethrough, is structured such that gate gas can be introduced therein from above and beneath the substrate which is moved through the clearance, and is dimensioned such that opposite sides proximate to the position where the gate gas is introduced have different heights in accordance with the inner pressure upon film formation of each of the adjacent reaction chambers in communication with each other by the slit.

摘要翻译： 连续成膜装置包括能够形成化学成分不同的半导体膜的多个反应室。 反应室被布置成使得在其上形成膜的基材网可以在真空条件下气密地移动通过每个反应室。 气门设置在每对相邻反应室之间的中心位置处，每个气门设置有用于在相邻反应室之间连通的狭缝。 狭缝设置有允许衬底腹板通过其移动的间隙，其结构使得可以从移动通过间隙的衬底的上方和下方将栅极气体引入其中，并且其尺寸使得接近位置的相对侧 其中引入的栅极气体根据通过狭缝彼此连通的每个相邻反应室的成膜时的内部压力具有不同的高度。

公开(公告)号：US5720826A

公开(公告)日：1998-02-24

申请号：US657066

申请日：1996-05-29

申请人： Ryo Hayashi ,  Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Jinsho Matsuyama ,  Akira Sakai ,  Yuzo Koda ,  Tadashi Hori ,  Takahiro Yajima

发明人： Ryo Hayashi ,  Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Jinsho Matsuyama ,  Akira Sakai ,  Yuzo Koda ,  Tadashi Hori ,  Takahiro Yajima

IPC分类号： H01L31/04 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/076 ,  H01L31/03921 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： Provided are a photovoltaic element suitable for practical use, low in cost, high in reliability, and high in photoelectric conversion efficiency, and a fabrication process thereof. In the photovoltaic element having stacked layers of non-single-crystal semiconductors, at least an i-type semiconductor layer and a second conductivity type semiconductor layer are stacked on a first conductivity type semiconductor layer, and the second conduction type semiconductor layer has a layer A formed by exposing the surface of the i-type semiconductor layer to a plasma containing a valence electron controlling agent and a layer B deposited on the layer A by a CVD process using at least the valence electron controlling agent and the main constituent elements of the i-type semiconductor layer.

摘要翻译： 提供适用于实际使用，成本低，可靠性高，光电转换效率高的光电元件及其制造方法。 在具有非单晶半导体层叠的光电元件中，在第一导电型半导体层上层叠至少i型半导体层和第二导电型半导体层，第二导电型半导体层具有层 A通过使用至少化合价电子控制剂和主要构成元素的CVD工艺将i型半导体层的表面暴露于含有价电子控制剂和沉积在层A上的层B的等离子体 i型半导体层。

公开(公告)号：US5589007A

公开(公告)日：1996-12-31

申请号：US523169

申请日：1995-09-05

申请人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Hideo Tamura ,  Atsushi Yasuno ,  Akira Sakai ,  Tadashi Hori

发明人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Hideo Tamura ,  Atsushi Yasuno ,  Akira Sakai ,  Tadashi Hori

IPC分类号： H01L21/205 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/076 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic element comprises a first non-monocrystalline silicon-containing semiconductor layer of a first-conductivity type, a first i-type non-monocrystalline silicon-containing semiconductor layer formed by microwave plasma CVD, a second i-type non-monocrystalline silicon-containing semiconductor layer formed by high-frequency plasma CVD, and a second non-monocrystalline silicon-containing semiconductor layer of a conductivity type opposite to the first-conductivity type, wherein the second semiconductor layer is formed by plasma doping.

摘要翻译： 光电元件包括​​第一导电类型的第一非单晶硅含硅半导体层，通过微波等离子体CVD形成的第一i型非单晶含硅半导体层，第二i型非单晶硅含硅半导体层， 通过高频等离子体CVD形成的含硅半导体层和与第一导电型相反的导电类型的第二非单晶硅含量半导体层，其中通过等离子体掺杂形成第二半导体层。

公开(公告)号：US5968274A

公开(公告)日：1999-10-19

申请号：US754066

申请日：1996-11-20

申请人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Takehito Yoshino ,  Akira Sakai ,  Tadashi Hori

发明人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Takehito Yoshino ,  Akira Sakai ,  Tadashi Hori

IPC分类号： C23C14/56 ,  C23C16/54 ,  H01L31/20

CPC分类号： H01L31/206 ,  C23C14/562 ,  C23C14/568 ,  C23C16/545 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： The present invention aims to provide a continuous forming method and apparatus for functional deposited films having excellent characteristics while preventing any mutual mixture of gases between film forming chambers having different pressures, wherein semiconductor layers of desired conductivity type are deposited on a strip-like substrate within a plurality of film forming chambers, by plasma CVD, while the strip-like substrate is moved continuously in a longitudinal direction thereof through the plurality of film forming chambers connected via gas gates having means for introducing a scavenging gas into a slit-like separation passage, characterized in that at least one of the gas gates connecting the i-type layer film forming chamber for forming the semiconductor junction and the n- or p-type layer film forming chamber having higher pressure than the i-type layer film forming chamber has the scavenging gas introducing position disposed on the n- or p-type layer film forming chamber side off from the center of the separation chamber of the gas gate.

摘要翻译： 本发明的目的在于提供具有优异特性的功能性沉积膜的连续成型方法和装置，同时防止在具有不同压力的成膜室之间任何相互混合的气体，其中期望的导电类型的半导体层沉积在带状衬底上 多个成膜室，通过等离子体CVD，同时带状基板沿其长度方向连续移动通过多个通过气门连接的成膜室，其具有用于将清除气体引入狭缝状分离通道 其特征在于，连接形成半导体结的i型层成膜室和i型层成膜室的n型或p型层成膜室中的至少一个气门具有比i型层成膜室高的压力 所述清除气体导入位置设置在形成有n型或p型层的膜上 r侧从气门的分离室的中心离开。

公开(公告)号：US5946587A

公开(公告)日：1999-08-31

申请号：US741352

申请日：1996-10-29

申请人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Takehito Yoshino ,  Akira Sakai ,  Tadashi Hori

发明人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Takehito Yoshino ,  Akira Sakai ,  Tadashi Hori

IPC分类号： C23C14/56 ,  C23C16/54 ,  H01L31/20 ,  C23C16/00

CPC分类号： H01L31/206 ,  C23C14/562 ,  C23C14/568 ,  C23C16/545 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： The present invention aims to provide a continuous forming method and apparatus for functional deposited films having excellent characteristics while preventing any mutual mixture of gases between film forming chambers having different pressures, wherein each of semiconductor layers of desired conduction type is deposited on a strip-like substrate within a plurality of film forming chambers, by plasma CVD, while the strip-like substrate is being moved continuously in a longitudinal direction thereof through the plurality of film forming chambers connected via a gas gate having the structure of introducing a scavenging gas into a slit-like separation passage, characterized in that at least one of the gas gates connecting the i-type layer film forming chamber for forming the semiconductor junction and the n- or p-type layer film forming chamber having higher pressure than the i-type layer film forming chamber has the scavenging gas introducing position disposed on the n- or p-type layer film forming chamber side off the center of the separation chamber of the gas gate.

摘要翻译： 本发明的目的在于提供一种具有优异特性的功能性沉积膜的连续成型方法和装置，同时防止在具有不同压力的成膜室之间的气体之间的任何相互混合，其中期望的导电类型的每个半导体层沉积在带状 通过等离子体CVD在多个成膜室内的基板，同时带状基板沿着其长度方向连续移动通过多个成膜室，该多个成膜室通过具有引入清除气体的结构的气门连接到 狭缝状分离通道，其特征在于，连接形成半导体结的i型层成膜室和n型或p型层成膜室中的至少一个具有比i型 层成膜室具有设置在n型或p型层上的清除气体导入位置 成膜室一侧离开气门分离室的中心。

公开(公告)号：US5769963A

公开(公告)日：1998-06-23

申请号：US697783

申请日：1996-08-30

申请人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Yuzo Koda ,  Tadashi Hori ,  Tomonori Nishimoto ,  Takahiro Yajima

发明人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Yuzo Koda ,  Tadashi Hori ,  Tomonori Nishimoto ,  Takahiro Yajima

IPC分类号： H01L31/0368 ,  H01L31/075 ,  H01L31/20 ,  H01L31/0352

CPC分类号： H01L31/076 ,  H01L31/03682 ,  H01L31/075 ,  H01L31/206 ,  Y02E10/546 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic device comprises a semiconductor region having at least one set of semiconductor layers comprised of a first semiconductor layer having a first conductivity type, an intrinsic or substantially intrinsic second semiconductor layer, and a third semiconductor layer having a conductivity type opposite to that of the first conductivity type, the layers being formed in this order, and first and second electrodes provided such that the electrodes interpose the semiconductor region; wherein the density of a dopant impurity determining the conductivity type of the first semiconductor layer in a set of semiconductor layers which is in contact with the first electrode is varied so as to be lower on the side of the first electrode, or the grain size of crystals in the first semiconductor layer is varied so as to be smaller on the side of the first electrode. This provides a photovoltaic device that does not exhibit great lowering of characteristics even when short circuits locally occur in the semiconductor layers during long-term service.

摘要翻译： 一种光电器件包括具有至少一组半导体层的半导体区域，该组半导体层由具有第一导电类型的第一半导体层，本征的或基本上本征的第二半导体层组成，以及具有与第 第一导电类型，这些层依次形成，第一和第二电极设置成使得电极插入半导体区域; 其中确定与第一电极接触的一组半导体层中的第一半导体层的导电类型的掺杂剂杂质的密度在第一电极的侧面变化，或者在第一电极的一侧的晶粒尺寸 第一半导体层中的晶体在第一电极侧变化较小。 这提供了即使在长期服务期间在半导体层中局部出现短路的情况下也不会出现特性的降低的光电器件。

公开(公告)号：US06877458B2

公开(公告)日：2005-04-12

申请号：US09797566

申请日：2001-03-05

申请人： Hiroyuki Ozaki ,  Shotaro Okabe ,  Masahiro Kanai ,  Yuzo Koda ,  Tadashi Hori

发明人： Hiroyuki Ozaki ,  Shotaro Okabe ,  Masahiro Kanai ,  Yuzo Koda ,  Tadashi Hori

IPC分类号： C23C16/455 ,  C23C16/44 ,  C23C16/509 ,  C23C16/54 ,  H01L21/205 ,  H01L31/04 ,  C23C16/00

CPC分类号： H01J37/32834 ,  C23C16/4412 ,  C23C16/5096 ,  C23C16/545

摘要： To provide an apparatus for forming a deposited film, which is a parallel plate electrode type CVD apparatus, with a discharge vessel receiving a material gas flowing therein and discharging air therefrom, decomposing the material gas by the aid of a plasma generated therein, and depositing the film on the substrate, in which the exhaust port of the material gas exhaust means has an opening wider in the lateral direction than the parallel plate electrode. This structure diminishes the stagnant region of the material gas during the deposited film forming process and controls formation of by-products, to deposit the film uniform in quality and thickness.

摘要翻译： 为了提供一种用于形成沉积膜的装置，其是平行板电极型CVD装置，放电容器容纳在其中流动的材料气体并从其中排出空气，借助于其中产生的等离子体分解原料气体，并沉积 基板上的材料气体排出装置的排气口的横向方向上的开口比平行板电极宽。 这种结构减少了沉积膜形成过程期间材料气体的停滞区域，并且控制副产物的形成，以使膜在质量和厚度上均匀。