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    Deposition apparatus for manufacturing thin film
    3.
    发明授权
    Deposition apparatus for manufacturing thin film 有权
    用于制造薄膜的沉积装置

    公开(公告)号：US06530341B1

    公开(公告)日：2003-03-11

    申请号：US09257027

    申请日：1999-02-25

    申请人： Yuzo Kohda ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Hori ,  Tomonori Nishimoto ,  Takahiro Yajima

    发明人： Yuzo Kohda ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Hori ,  Tomonori Nishimoto ,  Takahiro Yajima

    IPC分类号： H05H100

    CPC分类号： H01J37/32009 ,  H01J37/32082 ,  H01J37/32541 ,  H01J37/3277 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/50 ,  Y02P70/521

    摘要： A deposition apparatus of the present invention is arranged so that a surface area of a radio-frequency power applying cathode electrode disposed in a glow discharge space, in a space in contact with discharge is greater than a surface area of the whole of a ground electrode (anode electrode) including a beltlike member in the discharge space. This structure can maintain the potential (self-bias) of the cathode electrode disposed in the glow discharge space automatically at a positive potential with respect to the ground (anode) electrode including the beltlike member. As a result, the bias is applied in the direction of irradiation of ions with positive charge to a deposit film on the beltlike member, so that the ions existing in the plasma discharge are accelerated more efficiently toward the beltlike member, thereby effectively giving energy to the surface of deposit film by ion bombardment. Accordingly, since the structural relaxation of film is promoted even at relatively high deposition rates, a microcrystal semiconductor film can be formed at the relatively high deposition rates with good efficiency, with high uniformity, and with good reproducibility.

    摘要翻译： 本发明的沉积装置被布置成使得设置在辉光放电空间中的与放电接触的空间中的射频施加电极的表面积大于接地电极整体的表面积 （阳极电极），其在放电空间中包括带状构件。该结构可以将设置在辉光放电空间中的阴极的电位（自偏压）自动保持在相对于包括 结果，将带正电荷的离子的照射方向施加到带状构件上的沉积膜上，使得存在于等离子体放电中的离子更有效地朝向带状构件加速，从而有效地 通过离子轰击给沉积膜表面赋予能量。 因此，即使在相对高的沉积速率下也能促进膜的结构弛豫，可以以较高的沉积速率以高的均匀性和高的再现性形成微晶半导体膜。

    Method and device for forming semiconductor thin film, and method and device for forming photovoltaic element
    5.
    发明授权
    Method and device for forming semiconductor thin film, and method and device for forming photovoltaic element 失效
    用于形成半导体薄膜的方法和装置，以及用于形成光伏元件的方法和装置

    公开(公告)号：US6159763A

    公开(公告)日：2000-12-12

    申请号：US927413

    申请日：1997-09-10

    申请人： Akira Sakai ,  Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

    发明人： Akira Sakai ,  Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

    IPC分类号： C23C16/509 ,  H01L21/205 ,  H01L31/075 ,  H01L31/20 ,  H01L31/18

    CPC分类号： H01L31/076 ,  C23C16/5096 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

    摘要： There is provided a method of forming a photovoltaic element, in which a p-type semiconductor layer is formed in a device for forming a semiconductor thin film having a cathod electrode structure, in which in a plasma discharge space, the surface area of a cathod electrode in a plasma discharge space is larger than the sum of surface areas of a belt-like member and an anode electrode, a potential of said cathod electrode at the time of excitation of glow discharge is positive relative to the belt-like member and the anode electrode, and a separator electrode partially constituting the cathod electrode is configured to have a form of a fin or a block, and an n-type semiconductor layer is formed in a device for forming a semiconductor thin film having a cathod electrode structure of a capacitive-coupling, parallel-plate type. Thereby, a photovoltaic element having a high quality and superior uniformity over a large area, less defects, superior photo deterioration property and improved series resistance can be manufactured providing a high throughput in large quantities with good reproducibility.

    摘要翻译： 提供一种形成光电元件的方法，其中在用于形成具有阴极电极结构的半导体薄膜的器件中形成p型半导体层，其中在等离子体放电空间中，阴极的表面积 等离子体放电空间中的电极大于带状部件和阳极电极的表面积的总和，所述阴极电极在辉光放电的激发时的电位相对于带状部件是正的， 阳极电极和部分地构成阴极电极的隔离电极构成为具有翅片或块的形式，并且在用于形成具有阴极电极结构的半导体薄膜的器件中形成n型半导体层 电容耦合，平行板型。 由此，可以制造出具有高质量且均匀性大的光电元件，较少的缺陷，优异的光劣化性能和改善的串联电阻，从而提供大量的高生产率和良好的再现性。

    Photovoltaic element
    6.
    发明授权
    Photovoltaic element 失效
    光伏元件

    公开(公告)号：US06162988A

    公开(公告)日：2000-12-19

    申请号：US923259

    申请日：1997-09-04

    申请人： Shotaro Okabe ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

    发明人： Shotaro Okabe ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

    IPC分类号： G03G5/08 ,  C23C16/50 ,  C23C16/511 ,  H01L21/205 ,  H01L31/04 ,  H01L31/075 ,  H01L31/076 ,  H01L31/20 ,  H01L31/00

    CPC分类号： H01L31/076 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

    摘要： The photovoltaic element of the present invention is a photovoltaic element comprised of a semiconductor-junctioned element, characterized in that the element includes a first electrically conductive type semiconductor layer, a non-crystalline i type semiconductor layer, a microcrystalline i type semiconductor layer and a microcrystalline second electrically conductive type semiconductor layer and is pin-junctioned, and a method of and an apparatus for manufacturing the same are characterized by efficiently and continuously mass-producing the photovoltaic element having an excellent current-voltage characteristic and excellent photoelectric conversion efficiency. Thereby, there are provided a photovoltaic element in which the junction interface between the non-crystalline i type layer and the microcrystalline electrically conductive type layer has good grating consistency and which has an excellent current-voltage characteristic and excellent photoelectric conversion efficiency, and a method of and an apparatus for continuously mass-producing the same.

    摘要翻译： 本发明的光电元件是由半导体结合元件构成的光电元件，其特征在于，所述元件包括第一导电型半导体层，非晶i型半导体层，微晶i型半导体层和 微结晶第二导电型半导体层，并且是引脚连接的，其制造方法及其制造方法的特征在于有效且连续地批量生产具有优异的电流 - 电压特性和优异的光电转换效率的光电元件。 因此，提供了一种光电元件，其中非晶i型层和微晶导电型层之间的结界面具有良好的光栅一致性，并且具有优异的电流 - 电压特性和优异的光电转换效率，以及一种方法 以及用于连续批量生产该装置的装置。

    Method of manufacturing photovoltaic element and apparatus therefor
    8.
    发明授权
    Method of manufacturing photovoltaic element and apparatus therefor 有权
    制造光伏元件的方法及其设备

    公开(公告)号：US06368944B1

    公开(公告)日：2002-04-09

    申请号：US09664219

    申请日：2000-09-18

    申请人： Shotaro Okabe ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

    发明人： Shotaro Okabe ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

    IPC分类号： H01L2120

    CPC分类号： H01L31/076 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

    摘要： The photovoltaic element of the present invention is a photovoltaic element comprised of a semiconductor-junctioned element, characterized in that the element includes a first electrically conductive type semiconductor layer, a non-crystalline i type semiconductor layer, a microcrystalline i type semiconductor layer and a microcrystalline second electrically conductive type semiconductor layer and is pin-junctioned, and a method of and an apparatus for manufacturing the same are characterized by efficiently and continuously mass-producing the photovoltaic element having an excellent current-voltage characteristic and excellent photoelectric conversion efficiency. Thereby, there are provided a photovoltaic element in which the junction interface between the non-crystalline i type layer and the microcrystalline electrically conductive type layer has good grating consistency and which has an excellent current-voltage characteristic and excellent photoelectric conversion efficiency, and a method of and an apparatus for continuously mass-producing the same.

    摘要翻译： 本发明的光电元件是由半导体结合元件构成的光电元件，其特征在于，所述元件包括第一导电型半导体层，非晶i型半导体层，微晶i型半导体层和 微结晶第二导电型半导体层，并且是引脚连接的，其制造方法及其制造方法的特征在于有效且连续地批量生产具有优异的电流 - 电压特性和优异的光电转换效率的光电元件。 因此，提供了一种光电元件，其中非晶i型层和微晶导电型层之间的结界面具有良好的光栅一致性，并且具有优异的电流 - 电压特性和优异的光电转换效率，以及一种方法 以及用于连续批量生产该装置的装置。

    Photovoltaic device
    9.
    发明授权
    Photovoltaic device 失效
    光伏装置

    公开(公告)号：US5769963A

    公开(公告)日：1998-06-23

    申请号：US697783

    申请日：1996-08-30

    申请人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Yuzo Koda ,  Tadashi Hori ,  Tomonori Nishimoto ,  Takahiro Yajima

    发明人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Yuzo Koda ,  Tadashi Hori ,  Tomonori Nishimoto ,  Takahiro Yajima

    IPC分类号： H01L31/0368 ,  H01L31/075 ,  H01L31/20 ,  H01L31/0352

    CPC分类号： H01L31/076 ,  H01L31/03682 ,  H01L31/075 ,  H01L31/206 ,  Y02E10/546 ,  Y02E10/548 ,  Y02P70/521

    摘要： A photovoltaic device comprises a semiconductor region having at least one set of semiconductor layers comprised of a first semiconductor layer having a first conductivity type, an intrinsic or substantially intrinsic second semiconductor layer, and a third semiconductor layer having a conductivity type opposite to that of the first conductivity type, the layers being formed in this order, and first and second electrodes provided such that the electrodes interpose the semiconductor region; wherein the density of a dopant impurity determining the conductivity type of the first semiconductor layer in a set of semiconductor layers which is in contact with the first electrode is varied so as to be lower on the side of the first electrode, or the grain size of crystals in the first semiconductor layer is varied so as to be smaller on the side of the first electrode. This provides a photovoltaic device that does not exhibit great lowering of characteristics even when short circuits locally occur in the semiconductor layers during long-term service.

    摘要翻译： 一种光电器件包括具有至少一组半导体层的半导体区域，该组半导体层由具有第一导电类型的第一半导体层，本征的或基本上本征的第二半导体层组成，以及具有与第 第一导电类型，这些层依次形成，第一和第二电极设置成使得电极插入半导体区域; 其中确定与第一电极接触的一组半导体层中的第一半导体层的导电类型的掺杂剂杂质的密度在第一电极的侧面变化，或者在第一电极的一侧的晶粒尺寸 第一半导体层中的晶体在第一电极侧变化较小。 这提供了即使在长期服务期间在半导体层中局部出现短路的情况下也不会出现特性的降低的光电器件。