公开(公告)号：US10720399B2

公开(公告)日：2020-07-21

申请号：US16171335

申请日：2018-10-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Fang-Yu Liang ,  Ching-Feng Yang ,  Kai-Chiang Wu

IPC: H01L21/311 ,  H01L23/66 ,  H01L23/00 ,  H01L23/538 ,  H01L23/552 ,  H01L23/31 ,  H01L25/16 ,  H01L21/56 ,  H01L21/683 ,  H01L21/3205 ,  H01L21/3105 ,  H01L21/288 ,  H01L21/321 ,  H01L21/48 ,  H01Q1/40

Abstract: A semiconductor package includes an encapsulated semiconductor device, a first redistribution structure, an insulating layer, and an antenna. The encapsulated semiconductor device includes a semiconductor device encapsulated by an encapsulation material. The redistribution structure is disposed on a first side the encapsulated semiconductor device and electrically connected to the semiconductor device. The insulating layer is disposed on a second side of the encapsulated semiconductor device and comprises a groove pattern. The antenna is filled the groove pattern, wherein an upper surface of the antenna is substantially coplanar with an upper surface of the insulating layer.

公开(公告)号：US11373922B2

公开(公告)日：2022-06-28

申请号：US16993285

申请日：2020-08-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sen-Kuei Hsu ,  Ching-Feng Yang ,  Hsin-Yu Pan ,  Kai-Chiang Wu ,  Yi-Che Chiang

IPC: H01L23/52 ,  H01L23/367 ,  H01L23/00 ,  H01L21/768 ,  H01L23/522 ,  H01L23/538

Abstract: A semiconductor package includes a die, a dummy die, a plurality of conductive terminals, an insulating layer and a plurality of thermal through vias. The dummy die is disposed aside the die. The conductive terminals are disposed at a first side of the dummy die and the die and electrically connected to the dummy die and the die. The insulating layer is disposed at a second side opposite to the first side of the dummy die and the die. The thermal through vias penetrating through the insulating layer.

公开(公告)号：US11233019B2

公开(公告)日：2022-01-25

申请号：US16893422

申请日：2020-06-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Fang-Yu Liang ,  Ching-Feng Yang ,  Kai-Chiang Wu

IPC: H01L21/4763 ,  H01L23/66 ,  H01L23/00 ,  H01L23/538 ,  H01L23/552 ,  H01L23/31 ,  H01L25/16 ,  H01L21/56 ,  H01L21/683 ,  H01L21/3205 ,  H01L21/311 ,  H01L21/3105 ,  H01L21/288 ,  H01L21/321 ,  H01L21/48 ,  H01Q1/40

Abstract: A method including followings is provided. An encapsulated device including a semiconductor die and an insulating encapsulation laterally encapsulating the semiconductor die is provided. An insulating layer is formed over a surface of the encapsulated device. A groove pattern is formed on the insulating layer. A conductive paste is filled in the groove pattern and the conductive paste filled in the groove pattern is cured.

公开(公告)号：US20200135669A1

公开(公告)日：2020-04-30

申请号：US16171335

申请日：2018-10-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Fang-Yu Liang ,  Ching-Feng Yang ,  Kai-Chiang Wu

IPC: H01L23/66 ,  H01L23/31 ,  H01L23/00 ,  H01L23/538 ,  H01L23/552 ,  H01L25/16 ,  H01L21/56 ,  H01L21/683 ,  H01L21/3205 ,  H01L21/311 ,  H01L21/3105 ,  H01L21/288 ,  H01L21/321 ,  H01L21/48 ,  H01Q1/40

Abstract: A semiconductor package includes an encapsulated semiconductor device, a first redistribution structure, an insulating layer, and an antenna. The encapsulated semiconductor device includes a semiconductor device encapsulated by an encapsulation material. The redistribution structure is disposed on a first side the encapsulated semiconductor device and electrically connected to the semiconductor device. The insulating layer is disposed on a second side of the encapsulated semiconductor device and comprises a groove pattern. The antenna is filled the groove pattern, wherein an upper surface of the antenna is substantially coplanar with an upper surface of the insulating layer.

公开(公告)号：US20190287819A1

公开(公告)日：2019-09-19

申请号：US16429081

申请日：2019-06-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Nan-Chin Chuang ,  Ching-Feng Yang ,  Kai-Chiang Wu

IPC: H01L21/56 ,  H01L21/762 ,  H01L23/00 ,  H01L23/31 ,  H01L23/538

Abstract: An integrated fan-out package having a multi-band antenna and a method of forming the same are disclosed. An integrated fan-out package includes a semiconductor die, a molding layer and a plurality of through integrated fan-out vias. The molding layer is aside the semiconductor die. The through integrated fan-out vias are through the molding layer and arranged to form a plurality of dipole antennas. At least one of the plurality of dipole antennas includes two dipole arms each having a transmitting strip and a radiating strip connected to the transmitting part, and the radiating strip has a first part, a second part and a filter part between and in contact with the first part and the second part. The cross-sectional area of the filter part is less than the cross-sectional area of the first part or the second part of the radiating strip.

公开(公告)号：US10312112B2

公开(公告)日：2019-06-04

申请号：US15627457

申请日：2017-06-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Nan-Chin Chuang ,  Ching-Feng Yang ,  Kai-Chiang Wu

IPC: H01L23/31 ,  H01L21/76 ,  H01L21/56 ,  H01L23/538 ,  H01L23/00 ,  H01L21/762

Abstract: An integrated fan-out package having a multi-band antenna and a method of forming the same are disclosed. An integrated fan-out package includes a semiconductor die, a molding layer and a plurality of through integrated fan-out vias. The molding layer is aside the semiconductor die. The through integrated fan-out vias are through the molding layer and arranged to form a plurality of dipole antennas. At least one of the plurality of dipole antennas includes two dipole arms each having a transmitting strip and a radiating strip connected to the transmitting part, and the radiating strip has a first part, a second part and a filter part between and in contact with the first part and the second part. The cross-sectional area of the filter part is less than the cross-sectional area of the first part or the second part of the radiating strip.

公开(公告)号：US20240096848A1

公开(公告)日：2024-03-21

申请号：US18149806

申请日：2023-01-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Wei Wu ,  Ching-Feng Yang ,  Ying-Ching Shih ,  An-Jhih Su ,  Wen-Chih Chiou

IPC: H01L23/00 ,  H01L25/065

CPC classification number: H01L24/96 ,  H01L24/03 ,  H01L24/08 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/80 ,  H01L24/94 ,  H01L25/0652 ,  H01L2224/03614 ,  H01L2224/08145 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2924/1011 ,  H01L2924/182

Abstract: A method of manufacturing a semiconductor device includes forming a first bonding layer over a substrate of a first wafer, the first wafer including a first semiconductor die and a second semiconductor die, performing a first dicing process to form two grooves that extend through the first bonding layer, the two grooves being disposed between the first semiconductor die and the second semiconductor die, performing a second dicing process to form a trench that extends through the first bonding layer and partially through the substrate of the first wafer, where the trench is disposed between the two grooves, and thinning a backside of the substrate of the first wafer until the first semiconductor die is singulated from the second semiconductor die.

公开(公告)号：US10748831B2

公开(公告)日：2020-08-18

申请号：US15992196

申请日：2018-05-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sen-Kuei Hsu ,  Ching-Feng Yang ,  Hsin-Yu Pan ,  Kai-Chiang Wu ,  Yi-Che Chiang

IPC: H01L23/36 ,  H01L23/52 ,  H01L23/538 ,  H01L23/367 ,  H01L23/00 ,  H01L21/768 ,  H01L23/522

Abstract: Semiconductor packages and methods of forming the same are provided. One of the semiconductor package includes a first die, a dummy die, a first redistribution layer structure, an insulating layer and an insulating layer. The dummy die is disposed aside the first die. The first redistribution layer structure is electrically connected to the first die and having connectors thereover. The insulating layer is disposed over the first die and the dummy die and opposite to the first redistribution layer structure. The insulating layer penetrates through the insulating layer.

公开(公告)号：US20190371694A1

公开(公告)日：2019-12-05

申请号：US15992196

申请日：2018-05-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sen-Kuei Hsu ,  Ching-Feng Yang ,  Hsin-Yu Pan ,  Kai-Chiang Wu ,  Yi-Che Chiang

IPC: H01L23/367 ,  H01L23/00 ,  H01L21/768 ,  H01L23/522 ,  H01L23/538

Abstract: Semiconductor packages and methods of forming the same are provided. One of the semiconductor package includes a first die, a dummy die, a first redistribution layer structure, an insulating layer and an insulating layer. The dummy die is disposed aside the first die. The first redistribution layer structure is electrically connected to the first die and having connectors thereover. The insulating layer is disposed over the first die and the dummy die and opposite to the first redistribution layer structure. The insulating layer penetrates through the insulating layer.

公开(公告)号：US20180366347A1

公开(公告)日：2018-12-20

申请号：US15627457

申请日：2017-06-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Nan-Chin Chuang ,  Ching-Feng Yang ,  Kai-Chiang Wu

IPC: H01L21/56 ,  H01L23/31 ,  H01L23/538 ,  H01L23/00 ,  H01L21/762

CPC classification number: H01L21/561 ,  H01L21/762 ,  H01L21/76254 ,  H01L23/3128 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20

Abstract: An integrated fan-out package having a multi-band antenna and a method of forming the same are disclosed. An integrated fan-out package includes a semiconductor die, a molding layer and a plurality of through integrated fan-out vias. The molding layer is aside the semiconductor die. The through integrated fan-out vias are through the molding layer and arranged to form a plurality of dipole antennas. At least one of the plurality of dipole antennas includes two dipole arms each having a transmitting strip and a radiating strip connected to the transmitting part, and the radiating strip has a first part, a second part and a filter part between and in contact with the first part and the second part. The cross-sectional area of the filter part is less than the cross-sectional area of the first part or the second part of the radiating strip.