公开(公告)号：US20230255120A1

公开(公告)日：2023-08-10

申请号：US18302538

申请日：2023-04-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tai-Yen Peng ,  Yu-Feng Yin ,  An-Shen Chang ,  Han-Ting Tsai ,  Qiang Fu

IPC: H10N50/80 ,  G11C11/16 ,  H10B61/00 ,  H10N50/01

CPC classification number: H10N50/80 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  H10B61/22 ,  H10N50/01

Abstract: In an embodiment, a device includes: a magnetoresistive random access memory (MRAM) array including MRAM cells arranged in rows and columns, where a first column of the columns includes: first bottom electrodes arranged along the first column; first magnetic tunnel junction (MTJ) stacks over the first bottom electrodes; a first shared electrode over each of the first MTJ stacks; second bottom electrodes arranged along the first column; second MTJ stacks over the second bottom electrodes; a second shared electrode over each of the second MTJ stacks; and a bit line electrically connected to the first shared electrode and the second shared electrode.

公开(公告)号：US20210098695A1

公开(公告)日：2021-04-01

申请号：US17120613

申请日：2020-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tai-Yen Peng ,  Yu-Shu Chen ,  Sin-Yi Yang ,  Chen-Jung Wang ,  Chien Chung Huang ,  Han-Ting Lin ,  Jyu-Horng Shieh ,  Qiang Fu

IPC: H01L43/12 ,  H01L43/02

Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.