Package and manufacturing method thereof

    公开(公告)号:US11557568B2

    公开(公告)日:2023-01-17

    申请号:US16801171

    申请日:2020-02-26

    Abstract: A package includes at least one memory component and an insulating encapsulation. The at least one memory component includes a stacked memory structure and a plurality of conductive posts. The stacked memory structure is laterally encapsulated in a molding compound. The conductive posts are disposed on an upper surface of the stacked memory structure. The upper surface of the stacked memory structure is exposed from the molding compound. The insulating encapsulation encapsulates the at least one memory component. The top surfaces of the conductive posts are exposed form the insulating encapsulation. A material of the molding compound is different a material of the insulating encapsulation.

    Semiconductor Package and Method of Manufacturing The Same

    公开(公告)号:US20220384212A1

    公开(公告)日:2022-12-01

    申请号:US17884037

    申请日:2022-08-09

    Abstract: A method includes forming a set of through-vias in a substrate, the set of through-vias partially penetrating a thickness of the substrate. First connectors are formed over the set of through-vias on a first side of the substrate. The substrate is singulated to form dies. The first side of the dies are attached to a carrier. The dies are thinned from the second side to expose the set of through-vias. Second connectors are formed over the set of through-vias on the second side of the dies. A device die is bonded to the second connectors. The dies and device dies are singulated into multiple packages. Corresponding structures result from these methods.

    Package structure and method of manufacturing the same

    公开(公告)号:US11145562B2

    公开(公告)日:2021-10-12

    申请号:US16721829

    申请日:2019-12-19

    Abstract: A package structure includes an interposer, a die and a conductive terminal. The interposer includes an encapsulant substrate, a through via and an interconnection structure. The through via is embedded in the encapsulant substrate. The interconnection structure is disposed on a first side of the encapsulant substrate and electrically connected to the through via. The die is electrically bonded to the interposer and disposed over the interconnection structure and the first side of the encapsulant substrate. The conductive terminal is disposed on a second side of the encapsulant substrate vertically opposite to the first side, and electrically connected to the interposer and the die.

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