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    Trench isolation structure for scaled pixel region
    12.
    发明授权
    Trench isolation structure for scaled pixel region 有权

    公开(公告)号：US12062678B2

    公开(公告)日：2024-08-13

    申请号：US17372866

    申请日：2021-07-12

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Cheng Yu Huang ,  Wei-Chieh Chiang ,  Keng-Yu Chou ,  Tzu-Hsuan Hsu

    IPC: H01L27/146

    CPC classification number: H01L27/1463 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14683

    Abstract: The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a substrate having a first side and a second side opposing the first side. The substrate has one or more sidewalls defining a trench extending along opposing sides of a pixel region having a first width. An isolation structure including one or more dielectric materials is disposed within the trench. The isolation structure has a second width. An image sensing element and a focal region are disposed within the pixel region. The focal region is configured to receive incident radiation along the second side of the substrate. A ratio of the second width to the first width is in a range of between approximately 0.1 and approximately 0.2, so that the focal region is completely confined between interior sidewall of the isolation structure facing the image sensing element.

    Backside illuminated global shutter image sensor
    15.
    发明授权
    Backside illuminated global shutter image sensor 有权

    公开(公告)号：US11018177B2

    公开(公告)日：2021-05-25

    申请号：US16556654

    申请日：2019-08-30

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Jeng-Shyan Lin ,  Shu-Ting Tsai ,  Tzu-Hsuan Hsu

    IPC: H01L27/146

    Abstract: Various embodiments of the present disclosure are directed towards an image sensor. The image sensor includes a photodetector disposed in a semiconductor substrate. An interlayer dielectric (ILD) structure is disposed on a first side of the semiconductor substrate. A storage node is disposed in the semiconductor substrate and spaced from the photodetector, where the storage node is spaced from the first side by a first distance. A first isolation structure is disposed in the semiconductor substrate and between the photodetector and the storage node, where the first isolation structure extends into the semiconductor substrate from a second side of the semiconductor substrate that is opposite the first side, and where the first isolation structure is spaced from the first side by a second distance that is less than the first distance.

    ISOLATION STRUCTURE FOR BOND PAD STRUCTURE
    19.
    发明申请
    ISOLATION STRUCTURE FOR BOND PAD STRUCTURE 有权

    公开(公告)号：US20210242153A1

    公开(公告)日：2021-08-05

    申请号：US17236360

    申请日：2021-04-21

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Sin-Yao Huang ,  Jeng-Shyan Lin ,  Shih-Pei Chou ,  Tzu-Hsuan Hsu

    IPC: H01L23/00 ,  H01L27/146

    Abstract: Various embodiments of the present disclosure are directed towards a method for forming a semiconductor structure. The method includes forming a first isolation structure on a first surface of a substrate. A second isolation structure is formed into the first surface of the substrate. Sidewalls of the first isolation structure are disposed laterally between inner sidewalls of the second isolation structure. A bond pad is formed in the substrate such that the second isolation structure continuously laterally wraps around the bond pad.

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