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    Approach for Reducing Pixel Pitch using Vertical Transfer Gates and Implant Isolation Regions
    2.
    发明申请
    Approach for Reducing Pixel Pitch using Vertical Transfer Gates and Implant Isolation Regions 有权
    使用垂直转移门和种植体隔离区减少像素间距的方法

    公开(公告)号：US20160086984A1

    公开(公告)日：2016-03-24

    申请号：US14490824

    申请日：2014-09-19

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Tzu-Jui Wang ,  Yuichiro Yamashita ,  Seiji Takahashi ,  Jen-Cheng Liu

    IPC: H01L27/146

    CPC classification number: H01L27/1463 ,  H01L27/14603 ,  H01L27/14614 ,  H01L27/14638 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689

    Abstract: An active pixel sensor (APS) with a vertical transfer gate and a pixel transistor (e.g., a transfer transistor, a source follower transistor, a reset transistor, or a row select transistor) electrically isolated by an implant isolation region is provided. A semiconductor substrate has a photodetector buried therein. The vertical transfer gate extends into the semiconductor substrate with a channel region in electrical communication with the photodetector. The pixel transistor is arranged over the photodetector and configured to facilitate the pixel operation (e.g., reset, signal readout, etc.). The implant isolation region is arranged in the semiconductor substrate and surrounds and electrically isolates the pixel transistor. A method for manufacturing the APS is also provided.

    Abstract translation: 提供了具有垂直传输门和由注入隔离区电隔离的像素晶体管（例如，传输晶体管，源极跟随器晶体管，复位晶体管或行选择晶体管）的有源像素传感器（APS）。 半导体衬底具有埋入其中的光电检测器。 垂直传输门延伸到具有与光电检测器电连通的沟道区的半导体衬底中。 像素晶体管布置在光电检测器上方并且被配置为便于像素操作（例如，复位，信号读出等）。 植入物隔离区域布置在半导体衬底中并围绕并电隔离像素晶体管。 还提供了一种制造APS的方法。

    Image sensor with dual trench isolation structure
    3.
    发明授权
    Image sensor with dual trench isolation structure 有权

    公开(公告)号：US11705360B2

    公开(公告)日：2023-07-18

    申请号：US17197330

    申请日：2021-03-10

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Cheng-Hsien Chou ,  Sheng-Chau Chen ,  Tzu-Jui Wang ,  Sheng-Chan Li

    IPC: H01L21/762 ,  H01L27/146

    CPC classification number: H01L21/76224 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685

    Abstract: In some embodiments, the present disclosure relates to an image sensor. The image sensor comprises a substrate. A photodetector is in the substrate and includes a semiconductor guard ring extending into a first side of the substrate. A shallow trench isolation (STI) structure extends into the first side of the substrate. An outer isolation structure extends into a second side of the substrate, opposite the first side of the substrate, to the STI structure. The STI structure and the outer isolation structure laterally surround the photodetector. An inner isolation structure extends into the second side of the substrate and overlies the photodetector. The inner isolation structure is vertically separated from the photodetector by the substrate. Further, the outer isolation structure laterally surrounds the inner isolation structure.

    IMAGE SENSOR WITH DUAL TRENCH ISOLATION STRUCTURE
    8.
    发明申请
    IMAGE SENSOR WITH DUAL TRENCH ISOLATION STRUCTURE 有权

    公开(公告)号：US20220293457A1

    公开(公告)日：2022-09-15

    申请号：US17197330

    申请日：2021-03-10

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Cheng-Hsien Chou ,  Sheng-Chau Chen ,  Tzu-Jui Wang ,  Sheng-Chan Li

    IPC: H01L21/762 ,  H01L27/146

    Abstract: In some embodiments, the present disclosure relates to an image sensor. The image sensor comprises a substrate. A photodetector is in the substrate and includes a semiconductor guard ring extending into a first side of the substrate. A shallow trench isolation (STI) structure extends into the first side of the substrate. An outer isolation structure extends into a second side of the substrate, opposite the first side of the substrate, to the STI structure. The STI structure and the outer isolation structure laterally surround the photodetector. An inner isolation structure extends into the second side of the substrate and overlies the photodetector. The inner isolation structure is vertically separated from the photodetector by the substrate. Further, the outer isolation structure laterally surrounds the inner isolation structure.

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