Monomorph type piezoelectric/electrostrictive device and method for manufacturing the same
    15.
    发明授权
    Monomorph type piezoelectric/electrostrictive device and method for manufacturing the same 有权
    单晶型压电/电致伸缩器件及其制造方法

    公开(公告)号:US07567021B2

    公开(公告)日:2009-07-28

    申请号:US11850710

    申请日:2007-09-06

    IPC分类号: H01L41/08

    摘要: A monomorph type piezoelectric/electrostrictive device includes a piezoelectric/electrostrictive body, which is composed of a non-lead based piezoelectric/electrostrictive crystalline body containing at least Nb, Ta, and one or more types of alkali metal element, which has a cubic crystal structure at a temperature higher than the phase transition point and at least any one of tetragonal and orthorhombic crystal structures at a temperature lower than the phase transition point, and which is curved to a large extent by a polarization treatment to take on a curved shape at a temperature lower than the phase transition point without application of a voltage after the polarization treatment. In the polarization treatment, an electric field is increased at a speed of from 0.1 (kV/mm)/sec or more to 5 (kV/mm)/sec or less, with applying the maximum electric field of from 2 kV/mm or more to 1.0 kV/mm or less.

    摘要翻译: 单晶型压电/电致伸缩器件包括压电/电致伸缩体,其由至少含有Nb,Ta和一种或多种碱金属元素的非铅基压电/电致伸缩晶体组成,所述碱金属元素具有立方晶体 在低于相变温度的温度下高于相变温度的晶体结构中的至少任一种,并且在相对于相变温度低的温度下至少具有四方晶体和正交晶体结构,并且通过极化处理在很大程度上弯曲以呈现弯曲形状 在极化处理后不施加电压的温度低于相变点。 在极化处理中,通过施加2kV / mm以下的最大电场,以0.1(kV / mm)/ sec以上的速度将电场增加至5(kV / mm)/ sec以下, 多达1.0kV / mm以下。

    MONOMORPH TYPE PIEZOELECTRIC/ELECTROSTRICTIVE DEVICE AND METHOD FOR MANUFACTURING THE SAME
    16.
    发明申请
    MONOMORPH TYPE PIEZOELECTRIC/ELECTROSTRICTIVE DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    单体型压电/电致发光器件及其制造方法

    公开(公告)号:US20080074007A1

    公开(公告)日:2008-03-27

    申请号:US11850710

    申请日:2007-09-06

    IPC分类号: H01L41/18 H01L41/22

    摘要: A monomorph type piezoelectric/electrostrictive device includes a piezoelectric/electrostrictive body, which is composed of a non-lead based piezoelectric/electrostrictive crystalline body containing at least Nb, Ta, and one or more types of alkali metal element, which has a cubic crystal structure at a temperature higher than the phase transition point and at least any one of tetragonal and orthorhombic crystal structures at a temperature lower than the phase transition point, and which is curved to a large extent by a polarization treatment to take on a curved shape at a temperature lower than the phase transition point without application of a voltage after the polarization treatment. In the polarization treatment, an electric field is increased at a speed of from 0.1 (kV/mm)/sec or more to 5 (kV/mm)/sec or less, with applying the maximum electric field of from 2 kV/mm or more to 1.0 kV/mm or less.

    摘要翻译: 单晶型压电/电致伸缩器件包括压电/电致伸缩体,其由至少含有Nb,Ta和一种或多种碱金属元素的非铅基压电/电致伸缩晶体组成,所述碱金属元素具有立方晶体 在低于相变温度的温度下高于相变温度的晶体结构中的至少任一种,并且在相对于相变温度低的温度下至少具有四方晶体和正交晶体结构,并且通过极化处理在很大程度上弯曲以呈现弯曲形状 在极化处理后不施加电压的温度低于相变点。 在极化处理中,通过施加2kV / mm以下的最大电场,以0.1(kV / mm)/ sec以上的速度将电场增加至5(kV / mm)/ sec以下, 多达1.0kV / mm以下。

    Electron emitter comprised of dielectric material mixed with metal
    18.
    发明授权
    Electron emitter comprised of dielectric material mixed with metal 有权
    由与金属混合的电介质材料组成的电子发射体

    公开(公告)号:US07482739B2

    公开(公告)日:2009-01-27

    申请号:US11180975

    申请日:2005-07-13

    IPC分类号: H01J1/14 H01J1/304 H01J1/312

    摘要: A dielectric device of higher performance is provided. An electron emitter, to which the dielectric device is applied is provided with: an emitter including a dielectric; and an upper electrode and a lower electrode to which drive voltage is applied in order to emit electrons. The emitter is formed by the aerosol deposition method or the sol impregnation method, and the surface roughness of the upper surface thereof is controlled in the range from 0.1 to 3 in Ra.

    摘要翻译: 提供了更高性能的电介质器件。 施加电介质器件的电子发射体设置有:包括电介质的发射体; 以及为了发射电子而施加驱动电压的上电极和下电极。 发射体通过气溶胶沉积法或溶胶浸渍法形成,其上表面的表面粗糙度控制在Ra为0.1〜3的范围内。

    Electron emitter
    19.
    发明申请
    Electron emitter 有权
    电子发射体

    公开(公告)号:US20060012279A1

    公开(公告)日:2006-01-19

    申请号:US11180298

    申请日:2005-07-13

    IPC分类号: H01J9/02

    摘要: A dielectric device of higher performance is provided. An electron emitter, to which the dielectric device is applied is provided with: an emitter including a dielectric; and an upper electrode and a lower electrode to which drive voltage is applied in order to emit electrons. The emitter is formed by the aerosol deposition method or the sol impregnation method.

    摘要翻译: 提供了更高性能的电介质器件。 施加电介质器件的电子发射体设置有:包括电介质的发射体; 以及为了发射电子而施加驱动电压的上电极和下电极。 发射体由气溶胶沉积法或溶胶浸渍法形成。

    Electron emitter
    20.
    发明申请
    Electron emitter 有权
    电子发射体

    公开(公告)号:US20060012278A1

    公开(公告)日:2006-01-19

    申请号:US11180975

    申请日:2005-07-13

    IPC分类号: H01J1/02

    摘要: A dielectric device of higher performance is provided. An electron emitter, to which the dielectric device is applied is provided with: an emitter including a dielectric; and an upper electrode and a lower electrode to which drive voltage is applied in order to emit electrons. The emitter is formed by the aerosol deposition method or the sol impregnation method, and the surface roughness of the upper surface thereof is controlled in the range from 0.1 to 3 in Ra.

    摘要翻译: 提供了更高性能的电介质器件。 施加电介质器件的电子发射体设置有:包括电介质的发射体; 以及为了发射电子而施加驱动电压的上电极和下电极。 发射体通过气溶胶沉积法或溶胶浸渍法形成,其上表面的表面粗糙度控制在Ra为0.1〜3的范围内。