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    MOSFET with a thin gate insulating film
    11.
    发明授权
    MOSFET with a thin gate insulating film 有权

    公开(公告)号：US06410952B1

    公开(公告)日：2002-06-25

    申请号：US09828205

    申请日：2001-04-09

    申请人： Hisayo Momose ,  Hiroshi Iwai ,  Masanobu Saito ,  Tatsuya Ohguro ,  Mizuki Ono ,  Takashi Yoshitomi ,  Shinichi Nakamura

    发明人： Hisayo Momose ,  Hiroshi Iwai ,  Masanobu Saito ,  Tatsuya Ohguro ,  Mizuki Ono ,  Takashi Yoshitomi ,  Shinichi Nakamura

    IPC分类号： H01L2976

    摘要： A semiconductor device comprises: a p-type semiconductor substrate (1); an insulating film (3); a gate electrode (2) formed on the substrate via the insulating film; and an n-type source/drain region (5) formed on both sides of a channel forming region (4) located under the gate electrode (2) formed on the substrate (1). In particular, the thickness (TOX) of the insulating film (3) is determined to be less than 2.5 nm at conversion rate of silicon oxide film (silicon oxide equivalent thickness); a gate length (Lg) of the gate electrode (2) is determined to be equal to or less than 0.3 &mgr;m; and further a voltage applied to the gate electrode (2) and the drain region (6) is determined to be 1.5 V or less. Therefore, in the MOSFET having the tunneling gate oxide film (3), the reliability of the transistor under the hot carrier stress can be improved, and the gate leakage current can be reduced markedly, so that the transistor characteristics can be improved markedly.

    MOSFET with a thin gate insulating film
    12.
    发明申请
    MOSFET with a thin gate insulating film 失效
    具有薄栅绝缘膜的MOSFET

    公开(公告)号：US20050224898A1

    公开(公告)日：2005-10-13

    申请号：US11143594

    申请日：2005-06-03

    申请人： Hisayo Momose ,  Hiroshi Iwai ,  Masanobu Saito ,  Tatsuya Ohguro ,  Mizuki Ono ,  Takashi Yoshitomi ,  Shinichi Nakamura

    发明人： Hisayo Momose ,  Hiroshi Iwai ,  Masanobu Saito ,  Tatsuya Ohguro ,  Mizuki Ono ,  Takashi Yoshitomi ,  Shinichi Nakamura

    IPC分类号： H01L21/225 ,  H01L21/336 ,  H01L27/088 ,  H01L29/423 ,  H01L29/76 ,  H01L29/78

    CPC分类号： H01L29/66575 ,  H01L21/2255 ,  H01L21/2256 ,  H01L21/28211 ,  H01L27/0629 ,  H01L27/088 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/78

    摘要： A semiconductor device comprises: a p-type semiconductor substrate (1); an insulating film (3); a gate electrode (2) formed an the substrate via the insulating film; and an n-type source/drain region (5) formed on both sides of a channel forming region (4) located under the gate electrode (2) formed on the substrate (1). In particular, the thickness (TOX) of the insulating film (3) is determined to be less than 2.5 nm at conversion rate of silicon oxide film (silicon oxide equivalent thickness); a gate length (Lg) of the gate electrode (2) is determined to be equal to or less than 0.3 μm; and further a voltage applied to the gate electrode (2) and the drain region (6) is determined a be 1.5 V or less. Therefore, in the MOSFET having the tunneling gate oxide film (3), the reliability of the transistor under the hot carrier stress can be improved, and the gate leakage current can be reduced markedly, so that the transistor characteristics can be improved markedly.

    摘要翻译： 半导体器件包括：p型半导体衬底（1）; 绝缘膜（3）; 经由所述绝缘膜形成所述基板的栅电极（2） 以及形成在形成在基板（1）上的栅电极（2）下方的沟道形成区域（4）的两侧的n型源极/漏极区域（5）。 特别地，在氧化硅膜的转换率（氧化硅当量厚度）下，确定绝缘膜（3）的厚度（T×OX ）小于2.5nm。 栅极（2）的栅极长度（L SUB）确定为等于或小于0.3μm; 并且进一步施加到栅电极（2）和漏区（6）的电压为1.5V以下。 因此，在具有隧穿栅极氧化膜（3）的MOSFET中，可以提高热载流子应力下的晶体管的可靠性，并且可以显着降低栅极漏电流，从而可以显着提高晶体管特性。

    MOSFET with a thin gate insulating film
    13.
    发明授权
    MOSFET with a thin gate insulating film 失效
    具有薄栅绝缘膜的MOSFET

    公开(公告)号：US07282752B2

    公开(公告)日：2007-10-16

    申请号：US11143594

    申请日：2005-06-03

    申请人： Hisayo Momose ,  Hiroshi Iwai ,  Masanobu Saito ,  Tatsuya Ohguro ,  Mizuki Ono ,  Takashi Yoshitomi ,  Shinichi Nakamura

    发明人： Hisayo Momose ,  Hiroshi Iwai ,  Masanobu Saito ,  Tatsuya Ohguro ,  Mizuki Ono ,  Takashi Yoshitomi ,  Shinichi Nakamura

    IPC分类号： H01L29/76

    CPC分类号： H01L29/66575 ,  H01L21/2255 ,  H01L21/2256 ,  H01L21/28211 ,  H01L27/0629 ,  H01L27/088 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/78

    摘要： A semiconductor device comprises: a p-type semiconductor substrate (1); an insulating film (3); a gate electrode (2) formed an the substrate via the insulating film; and an n-type source/drain region (5) formed on both sides of a channel forming region (4) located under the gate electrode (2) formed on the substrate (1). In particular, the thickness (TOX) of the insulating film (3) is determined to be less than 2.5 nm at conversion rate of silicon oxide film (silicon oxide equivalent thickness); a gate length (Lg) of the gate electrode (2) is determined to be equal to or less than 0.3 μm; and further a voltage applied to the gate electrode (2) and the drain region (6) is determined a be 1.5 V or less. Therefore, in the MOSFET having the tunneling gate oxide film (3), the reliability of the transistor under the hot carrier stress can be improved, and the gate leakage current can be reduced markedly, so that the transistor characteristics can be improved markedly.

    摘要翻译： 半导体器件包括：p型半导体衬底（1）; 绝缘膜（3）; 经由所述绝缘膜形成所述基板的栅电极（2） 以及形成在形成在基板（1）上的栅电极（2）下方的沟道形成区域（4）的两侧的n型源极/漏极区域（5）。 特别地，在氧化硅膜的转换率（氧化硅当量厚度）下，确定绝缘膜（3）的厚度（T×OX ）小于2.5nm。 栅极（2）的栅极长度（L SUB）确定为等于或小于0.3μm; 并且进一步施加到栅电极（2）和漏区（6）的电压为1.5V以下。 因此，在具有隧穿栅极氧化膜（3）的MOSFET中，可以提高热载流子应力下的晶体管的可靠性，并且可以显着降低栅极漏电流，从而可以显着提高晶体管特性。

    MOSFET with a thin gate insulating film
    14.
    发明授权
    MOSFET with a thin gate insulating film 失效
    具有薄栅绝缘膜的MOSFET

    公开(公告)号：US5990516A

    公开(公告)日：1999-11-23

    申请号：US527562

    申请日：1995-09-13

    申请人： Hisayo Momose ,  Hiroshi Iwai ,  Masanobu Saito ,  Tatsuya Ohguro ,  Mizuki Ono ,  Takashi Yoshitomi ,  Shinichi Nakamura

    发明人： Hisayo Momose ,  Hiroshi Iwai ,  Masanobu Saito ,  Tatsuya Ohguro ,  Mizuki Ono ,  Takashi Yoshitomi ,  Shinichi Nakamura

    IPC分类号： H01L21/225 ,  H01L21/336 ,  H01L27/088 ,  H01L29/423 ,  H01L29/76 ,  H01L29/78

    CPC分类号： H01L29/66575 ,  H01L21/2255 ,  H01L21/2256 ,  H01L21/28211 ,  H01L27/0629 ,  H01L27/088 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/78

    摘要： A semiconductor device comprises: a p-type semiconductor substrate (1); an insulating film (3); a gate electrode (2) formed on the substrate via the insulating film; and an n-type source/drain region (5) formed on both sides of a channel forming region (4) located under the gate electrode (2) formed on the substrate (1). In particular, the thickness (T.sub.OX) of the insulating film (3) is determined to be less than 2.5 nm at conversion rate of silicon oxide film (silicon oxide equivalent thickness); a gate length (L.sub.g) of the gate electrode (2) is determined to be equal to or less than 0.3 .mu.m; and further a voltage applied to the gate electrode (2) and the drain region (6) is determined to be 1.5 V or less. Therefore, in the MOSFET having the tunneling gate oxide film (3), the reliability of the transistor under the hot carrier stress can be improved, and the gate leakage current can be reduced markedly, so that the transistor characteristics can be improved markedly.

    摘要翻译： 半导体器件包括：p型半导体衬底（1）; 绝缘膜（3）; 经由所述绝缘膜形成在所述基板上的栅电极（2） 以及形成在形成在基板（1）上的栅电极（2）下方的沟道形成区域（4）的两侧的n型源极/漏极区域（5）。 特别地，绝缘膜（3）的厚度（TOX）在氧化硅膜的转换率（氧化硅当量厚度））被确定为小于2.5nm。 栅电极（2）的栅极长度（Lg）被确定为等于或小于0.3μm; 并且进一步施加到栅极（2）和漏极区（6）的电压被确定为1.5V或更小。 因此，在具有隧穿栅极氧化膜（3）的MOSFET中，可以提高热载流子应力下的晶体管的可靠性，并且可以显着降低栅极漏电流，从而可以显着提高晶体管特性。

    Semiconductor device with side wall conductor film
    15.
    发明授权
    Semiconductor device with side wall conductor film 失效
    具有侧壁导体膜的半导体器件

    公开(公告)号：US5780901A

    公开(公告)日：1998-07-14

    申请号：US497554

    申请日：1995-06-30

    申请人： Takashi Yoshitomi ,  Hiroshi Iwai ,  Masanobu Saito ,  Hisayo Momose ,  Tatsuya Ohguro ,  Mizuki Ono

    发明人： Takashi Yoshitomi ,  Hiroshi Iwai ,  Masanobu Saito ,  Hisayo Momose ,  Tatsuya Ohguro ,  Mizuki Ono

    IPC分类号： H01L21/265 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/45 ,  H01L29/78 ,  H01L27/088

    CPC分类号： H01L29/66628 ,  H01L21/2652 ,  H01L21/823864 ,  H01L27/0928 ,  H01L29/0847 ,  H01L29/456 ,  H01L29/78 ,  H01L29/7833 ,  Y10S257/90

    摘要： A semiconductor device capable of restraining a short channel effect and obtaining a current drivability that is as high as possible includes a semiconductor substrate, a gate insulating film formed on the surface of this substrate, a gate electrode formed on this gate insulating film and side wall insulating films formed on this gate electrode and along side walls of the gate insulating film. The semiconductor device further includes side wall conductor films formed adjacent to the side wall insulating films and a source/drain region formed in a surface region of the substrate under the side wall conductivity film and in a surface region, adjacent to the side wall conductivity film, of the semiconductor substrate. An impurity concentration in a depthwise direction of the substrate with the surface of the side wall conductor film serving as a starting point exhibits one maximum value in a predetermined depth but decreases in a portion deeper than the predetermined depth.

    摘要翻译： 能够抑制短通道效应并获得尽可能高的电流驱动能力的半导体器件包括半导体衬底，形成在该衬底的表面上的栅极绝缘膜，形成在该栅极绝缘膜上的栅电极和侧壁 在该栅电极上形成的绝缘膜和栅极绝缘膜的侧壁。 半导体器件还包括与侧壁绝缘膜相邻形成的侧壁导体膜和形成在侧壁导电膜下的基板的表面区域中的源极/漏极区域以及与侧壁导电膜相邻的表面区域 的半导体衬底。 在侧壁导体膜的表面作为起始点的基板的深度方向上的杂质浓度在预定深度呈现一个最大值，但在比预定深度更深的部分中减小。

    Separator for nonaqueous electrolyte battery, and non-aqueous electrolyte secondary battery
    18.
    发明授权
    Separator for nonaqueous electrolyte battery, and non-aqueous electrolyte secondary battery 有权
    非水电解质电池用隔膜，非水电解质二次电池

    公开(公告)号：US09570725B2

    公开(公告)日：2017-02-14

    申请号：US13881314

    申请日：2011-10-21

    申请人： Takashi Yoshitomi

    发明人： Takashi Yoshitomi

    IPC分类号： H01M2/16 ,  H01M10/0525 ,  H01M2/34

    CPC分类号： H01M2/162 ,  H01M2/1613 ,  H01M2/1646 ,  H01M2/1653 ,  H01M2/1666 ,  H01M2/1686 ,  H01M2/348 ,  H01M10/0525

    摘要： Disclosed is a separator for a non-aqueous electrolyte battery, the separator including a polyolefin microporous substrate in which a content of polyolefin having a molecular weight of 100,000 or less is from 10% by mass to 25% by mass relative to a total amount of polyolefin, and a heat resistant porous layer that is formed on one or both sides of the polyolefin microporous substrate and that includes a heat resistant polymer, wherein a maximum value of S, which is represented by the following formula (1), is 0.8 or more, and a temperature exhibiting the maximum value of S is from 130° C. to 155° C.: S=d(log R)/dT  Formula (1): wherein R represents a resistance (ohm·cm2) of a cell, and T represents a temperature (° C.), in a measurement using a battery that includes the cell that is provided with a separator for a non-aqueous electrolyte battery, at a temperature rising rate of 1.6° C./min.

    摘要翻译： 其中R表示电池的电阻（欧姆·cm 2），T表示温度（℃），在使用包括具有非水电解质电池用隔膜的电池的电池的测量中， 升温速度为1.6℃/ min。