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公开(公告)号：US07612633B2
公开(公告)日：2009-11-03
申请号：US11748852
申请日：2007-05-15
申请人： Masatake Hangai , Yukinobu Tarui , Tamotsu Nishino , Yoshitsugu Yamamoto , Moriyasu Miyazaki , Yoji Isota
发明人： Masatake Hangai , Yukinobu Tarui , Tamotsu Nishino , Yoshitsugu Yamamoto , Moriyasu Miyazaki , Yoji Isota
CPC分类号： H01P1/15
摘要： The present invention provides a high-frequency switch including: a first switching element connected between a first input/output terminal and a second input/output terminal; a second switching element connected between the second input/output terminal and the first switching element; a high-frequency line provided between the first input/output terminal, the first switching element, and a third input/output terminal; and a third switching element connected between the third input/output terminal, the high-frequency line, and a ground. By connecting the first switching element, the second switching element, the high-frequency line, and the third switching element, because there exists no FET through which a large current flows when a state between the first input/output terminal and the third input/output terminal is set to a transmission state which requires high power handling capability, there is no need to use an FET having a large gate width, which is effective in reducing a loss of the switch.
摘要翻译： 本发明提供一种高频开关，包括：连接在第一输入/输出端子和第二输入/输出端子之间的第一开关元件; 连接在第二输入/输出端子和第一开关元件之间的第二开关元件; 设置在第一输入/输出端子，第一开关元件和第三输入/输出端子之间的高频线; 以及连接在第三输入/输出端子，高频线路和地之间的第三开关元件。 通过连接第一开关元件，第二开关元件，高频线路和第三开关元件，因为当第一输入/输出端子和第三输入/输出端子之间的状态不存在大电流流过的FET时， 输出端子被设置为需要高功率处理能力的传输状态，不需要使用具有大栅极宽度的FET，这有效地减少了开关损耗。
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公开(公告)号：US20080106353A1
公开(公告)日：2008-05-08
申请号：US11748852
申请日：2007-05-15
申请人： Masatake Hangai , Yukinobu Tarui , Tamotsu Nishino , Yoshitsugu Yamamoto , Moriyasu Miyazaki , Yoji Isota
发明人： Masatake Hangai , Yukinobu Tarui , Tamotsu Nishino , Yoshitsugu Yamamoto , Moriyasu Miyazaki , Yoji Isota
IPC分类号： H01P1/15
CPC分类号： H01P1/15
摘要： The present invention provides a high-frequency switch including: a first switching element connected between a first input/output terminal and a second input/output terminal; a second switching element connected between the second input/output terminal and the first switching element; a high-frequency line provided between the first input/output terminal, the first switching element, and a third input/output terminal; and a third switching element connected between the third input/output terminal, the high-frequency line, and a ground. By connecting the first switching element, the second switching element, the high-frequency line, and the third switching element, because there exists no FET through which a large current flows when a state between the first input/output terminal and the third input/output terminal is set to a transmission state which requires high power handling capability, there is no need to use an FET having a large gate width, which is effective in reducing a loss of the switch.
摘要翻译： 本发明提供一种高频开关，包括：第一开关元件，连接在第一输入/输出端子与第二输入/输出端子之间; 连接在第二输入/输出端子和第一开关元件之间的第二开关元件; 设置在第一输入/输出端子，第一开关元件和第三输入/输出端子之间的高频线; 以及连接在第三输入/输出端子，高频线路和地之间的第三开关元件。 通过连接第一开关元件，第二开关元件，高频线路和第三开关元件，因为当第一输入/输出端子和第三输入/输出端子之间的状态不存在大电流流过的FET时， 输出端子被设置为需要高功率处理能力的传输状态，不需要使用具有大栅极宽度的FET，这有效地减少了开关损耗。
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13.发明授权公开(公告)号：US07038768B2
公开(公告)日：2006-05-02
申请号：US10642184
申请日：2003-08-18
CPC分类号： G01J3/4338 , G01J2001/4242 , G01N21/47 , G01N21/6489 , G01N2021/4735
摘要： In a measuring apparatus for a semiconductor multiple layer structure, a spectrometer disperses light from a sample for measurement of the photoluminescence spectrum or disperses probe light to irradiate the sample for the measurement of the reflection spectrum. A controller makes a guide member guide the white light to the spectrometer and acquire electric signals from a first detector for the measurement of the reflection spectrum, and makes the guide member guide the light from the spectrometer to a second detector to acquire electric signals for the measurement of the photoluminescence spectrum.
摘要翻译： 在半导体多层结构的测量装置中，光谱仪从用于测量光致发光光谱的样品中分散光，或者分散探针光以照射样品用于测量反射光谱。 控制器使引导构件将白光引导到光谱仪，并从第一检测器获取用于测量反射光谱的电信号，并且使引导构件将来自光谱仪的光引导到第二检测器，以获取电信号 测量光致发光光谱。
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公开(公告)号：US07656514B2
公开(公告)日：2010-02-02
申请号：US11486271
申请日：2006-07-14
IPC分类号： G01N21/00
CPC分类号： G01N21/31
摘要： A method for evaluating semiconductor layers includes irradiating semiconductor layers on a substrate with light; measuring an optical spectrum peculiar to excitons in the semiconductor layers; and analyzing a broadening factor of optical spectral features of the optical spectrum. The method provides a quick measurement of a surface state of the semiconductor layers with high accuracy.
摘要翻译： 半导体层的评价方法包括用光照射基板上的半导体层; 测量半导体层中激子特有的光谱; 并分析光谱的光谱特征的拓宽因子。 该方法以高精度快速测量半导体层的表面状态。
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公开(公告)号：US20090218578A1
公开(公告)日：2009-09-03
申请号：US12143053
申请日：2008-06-20
IPC分类号： H01L29/205
CPC分类号： H01L27/0733 , H01L28/40 , H01L29/778
摘要： A semiconductor device comprises an AlN layer, a GaN layer, and an AlGaN layer sequentially formed on a semiconductor substrate. A first opening extends through said GaN layer and said AlGaN layer and exposes part of an upper surface of the AlN layer. A second opening extends through the semiconductor substrate and exposes a part of a lower surface of the AlN layer, in a location facing the first opening. A upper electrode is exposed on an upper surface of the AlN layer in the first opening; and a lower electrode is disposed on a lower surface of the AlN layer in the second opening.
摘要翻译： 半导体器件包括依次形成在半导体衬底上的AlN层，GaN层和AlGaN层。 第一开口延伸穿过所述GaN层和所述AlGaN层并暴露AlN层的上表面的一部分。 第二开口延伸穿过半导体衬底并且在面向第一开口的位置中暴露AlN层的下表面的一部分。 上电极暴露在第一开口中的AlN层的上表面上; 并且下电极设置在第二开口中的AlN层的下表面上。
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16.发明授权Method and apparatus for measuring surface carrier recombination velocity and surface Fermi level 有权用于测量表面载体复合速度和表面费米能级的方法和装置公开(公告)号：US07420684B2
公开(公告)日：2008-09-02
申请号：US11256180
申请日：2005-10-24
CPC分类号： G01N21/6489 , G01N21/1717 , G01N21/636
摘要： A pump beam irradiates the surface of a semiconductor sample through modulator while irradiating the surface with a probe beam so that a detector measures a light-modulated spectrum of the probe beam reflected from the surface of the semiconductor sample. Then, surface electric field strength is calculated from the period of Franz-Keldysh oscillations appearing in the light-modulated spectrum, and the surface recombination velocity and surface Fermi level are calculated based on a relation between the surface electric field strength and the probe beam power density.
摘要翻译： 泵浦光束通过调制器照射半导体样品的表面，同时用探针束照射表面，使得检测器测量从半导体样品的表面反射的探测光束的光调制光谱。 然后，从出现在光调制光谱中的Franz-Keldysh振荡的周期计算表面电场强度，并且基于表面电场强度和探测光束功率之间的关系计算表面复合速度和表面费米能级 密度。
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17.发明申请Method and apparatus for measuring surface carrier recombination velocity and surface Fermi level 有权用于测量表面载体复合速度和表面费米能级的方法和装置公开(公告)号：US20060094133A1
公开(公告)日：2006-05-04
申请号：US11256180
申请日：2005-10-24
IPC分类号： H01L21/66
CPC分类号： G01N21/6489 , G01N21/1717 , G01N21/636
摘要： A pump beam irradiates the surface of a semiconductor sample through modulator while irradiating the surface with a probe beam so that a detector measures a light-modulated spectrum of the probe beam reflected from the surface of the semiconductor sample. Then, surface electric field strength is calculated from the period of Franz-Keldysh oscillations appearing in the light-modulated spectrum, and the surface recombination velocity and surface Fermi level are calculated based on a relation between the surface electric field strength and the probe beam power density.
摘要翻译： 泵浦光束通过调制器照射半导体样品的表面，同时用探针束照射表面，使得检测器测量从半导体样品的表面反射的探测光束的光调制光谱。 然后，从出现在光调制光谱中的Franz-Keldysh振荡的周期计算表面电场强度，并且基于表面电场强度和探测光束功率之间的关系计算表面复合速度和表面费米能级 密度。
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公开(公告)号：US06998615B2
公开(公告)日：2006-02-14
申请号：US10768163
申请日：2004-02-02
IPC分类号： G01R29/22
CPC分类号： G01N21/35
摘要： In a method of evaluating a piezoelectric field, non-destructive spectrometry of piezoelectric fields is performed in a semiconductor heterojunction using a technique different from PR spectroscopy. In the method, at first, first and second absorption spectra are measured by irradiating the sample with infrared light at first and second angles, respectively. Then, a peak position of an absorption band having incident-angle dependent intensity is specified, based on the first and second absorption spectra. Thus, the piezoelectric field strength is obtained using a relationship between the piezoelectric field and an electron energy level corresponding to the peak position.
摘要翻译： 在评估压电场的方法中，使用与PR光谱不同的技术在半导体异质结中进行压电场的非破坏性光谱测定。 在该方法中，首先，通过分别以第一和第二角度以红外光照射样品来测量第一和第二吸收光谱。 然后，基于第一吸收光谱和第二吸收光谱，确定具有入射角依赖强度的吸收带的峰值位置。 因此，使用压电场和对应于峰值位置的电子能级之间的关系获得压电场强。
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公开(公告)号：US6037242A
公开(公告)日：2000-03-14
申请号：US892994
申请日：1997-07-15
IPC分类号： C30B1/02 , H01L21/20 , H01L21/338 , H01L29/778 , H01L29/812
CPC分类号： C30B1/023 , C30B29/40 , H01L21/02395 , H01L21/02463 , H01L21/02502 , H01L21/02513 , H01L21/02546 , H01L21/02631
摘要： A method of preparing an AlInAs/GaAs hetero-structure includes forming an Al.sub.1-x In.sub.x As (0
摘要翻译： 制备AlInAs / GaAs异质结构的方法包括在GaAs衬底上形成非晶状态的Al 1-x In x As（0
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公开(公告)号：US5796127A
公开(公告)日：1998-08-18
申请号：US915791
申请日：1997-08-21
IPC分类号： H01L29/812 , H01L21/203 , H01L21/314 , H01L21/324 , H01L21/335 , H01L21/338 , H01L23/31 , H01L29/36 , H01L29/778 , H01L29/201 , H01L29/737
CPC分类号： H01L29/66462 , H01L21/314 , H01L21/3245 , H01L23/3185 , H01L29/365 , H01L2924/0002
摘要： A method of fabricating a semiconductor device includes forming a first mixed crystal semiconductor layer of AlAs and InAs; applying a solution containing a material easily combining with fluorine to the surface of the first mixed crystal semiconductor layer exposed to the atmosphere so that the material combines with fluorine that sticks to the surface of the first mixed crystal semiconductor layer; and annealing the first mixed crystal semiconductor layer in a vacuum. In this method, since the fluorine on the surface of the first mixed crystal semiconductor layer exposed to the atmosphere combines with the material included in the solution and is removed together with the material, a first mixed crystal semiconductor layer having no fluorine is produced. Therefore, unwanted infiltration of fluorine into the first mixed crystal semiconductor layer is avoided, resulting in a highly reliable semiconductor device with desired characteristics.
摘要翻译： 制造半导体器件的方法包括：形成AlAs和InAs的第一混晶半导体层; 将含有容易与氟结合的材料的溶液施加到暴露于大气的第一混晶半导体层的表面，使得该材料与粘附在第一混晶半导体层表面的氟结合; 以及在真空中退火所述第一混晶半导体层。 在该方法中，由于暴露于大气中的第一混晶半导体层的表面上的氟与包含在溶液中的材料结合，与材料一起被除去，因此产生不含氟的第一混晶半导体层。 因此，避免了氟进入第一混晶半导体层的不必要的渗入，导致具有所需特性的高度可靠的半导体器件。
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