公开(公告)号：US20070274655A1

公开(公告)日：2007-11-29

申请号：US11557185

申请日：2006-11-07

申请人： Thomas Keyser ,  Grenville Hughes ,  Jerry Yue

发明人： Thomas Keyser ,  Grenville Hughes ,  Jerry Yue

IPC分类号： G02B6/10

CPC分类号： G02B6/12 ,  G02B6/136 ,  G02B6/34 ,  G02B6/4204 ,  G02B2006/121

摘要： A method of fabrication and a structure for a low-loss optical device. The optical device structure includes a waveguide that is formed within a device layer of an SOI substrate. A cladding region is formed beneath the waveguide and a BOX layer of the SOI substrate. The cladding region may comprise an air cavity or a cavity that is filled or at least partially filled with a dielectric material. Because the cladding region is formed in the bottom side, it supplements the BOX layer cladding. Consequently, a thinner BOX layer may be used for both electronic and optical devices, which facilitates optoelectronic IC processing and design.

摘要翻译： 一种低损耗光学器件的制造方法和结构。 光学器件结构包括形成在SOI衬底的器件层内的波导。 在波导的下方形成包层区域，形成SOI衬底的BOX层。 包层区域可以包括填充或至少部分地填充有电介质材料的空气腔或空腔。 因为包层区域形成在底部，所以它补充了BOX层包层。 因此，较薄的BOX层可用于电子和光学器件，这便于光电子IC处理和设计。

公开(公告)号：US07217584B2

公开(公告)日：2007-05-15

申请号：US10915081

申请日：2004-08-10

申请人： Cheisan J. Yue ,  Thomas Keyser

发明人： Cheisan J. Yue ,  Thomas Keyser

IPC分类号： H01L21/00

CPC分类号： G02F1/025 ,  G02F1/2257

摘要： The present invention provides silicon based thin-film structures that can be used to form high frequency optical modulators. Devices of the invention are formed as layered structures that have a thin-film dielectric layer, such as silicon dioxide, sandwiched between silicon layers. The silicon layers have high free carrier mobility. In one aspect of the invention a single crystal silicon material is bonded to a thin-film dielectric material to form a silicon-insulator-silicon thin-film structure for an optical modulator.

摘要翻译： 本发明提供了可用于形成高频光学调制器的硅基薄膜结构。 本发明的器件形成为具有夹在硅层之间的诸如二氧化硅的薄膜电介质层的分层结构。 硅层具有高自由载流子迁移率。 在本发明的一个方面，将单晶硅材料结合到薄膜电介质材料上以形成用于光学调制器的硅 - 绝缘体 - 硅薄膜结构。

公开(公告)号：US20050152658A1

公开(公告)日：2005-07-14

申请号：US10755212

申请日：2004-01-12

申请人： Thomas Keyser

发明人： Thomas Keyser

IPC分类号： G02B6/12 ,  G02B6/122 ,  G02B6/132 ,  G02B6/134 ,  G02B6/136 ,  G02B6/10

CPC分类号： G02B6/132 ,  G02B6/122 ,  G02B6/136 ,  G02B2006/12173

摘要： An optical device can be fabricated by forming a silicon rib, such as a poly-silicon rib, on a SOI substrate so that a portion of the SOI substrate is exposed, and by forming silicon spacers, such as amorphous or poly-silicon spacers, that round off corners of the silicon rib.

摘要翻译： 可以通过在SOI衬底上形成诸如多晶硅硅的硅肋以使SOI衬底的一部分露出，并且通过形成诸如非晶或多晶硅间隔物的硅间隔物来制造光学器件， 那个圆肋角落的硅肋。

公开(公告)号：US07535576B2

公开(公告)日：2009-05-19

申请号：US11433965

申请日：2006-05-15

申请人： Thomas Keyser ,  Glen A. Sanders ,  Grenville Hughes ,  Lee K. Strandjord

发明人： Thomas Keyser ,  Glen A. Sanders ,  Grenville Hughes ,  Lee K. Strandjord

IPC分类号： G01C19/72 ,  G01C19/66 ,  G02B6/00

CPC分类号： G01C19/72 ,  G01C19/727

摘要： Methods and apparatus are provided for a low cost optical gyro using thin film waveguides to direct light beams among the components of the gyro. The gyro includes a substrate having an insulator layer, a silicon waveguide formed on the insulator layer, and a resonator coupled to the silicon waveguide and configured to circulate a portion of a first light beam in a first counter-propagating direction and circulate a portion of a second light beam in a second counter-propagating direction. The first silicon waveguide propagates the first and second light beams therethrough. Each of the first and second light beams has a resonance frequency when circulating in the resonator.

摘要翻译： 提供了一种低成本光学陀螺仪的方法和装置，其使用薄膜波导将光束引导到陀螺仪的部件之中。 陀螺仪包括具有绝缘体层的基板，形成在绝缘体层上的硅波导和耦合到硅波导的谐振器，并被配置为使第一光束的第一反向传播方向的一部分循环并使 在第二反向传播方向上的第二光束。 第一硅波导将第一和第二光束传播通过其中。 第一和第二光束中的每一个在谐振器中循环时具有谐振频率。

公开(公告)号：US20090096113A1

公开(公告)日：2009-04-16

申请号：US12252452

申请日：2008-10-16

申请人： Todd Andrew Randazzo ,  Ronald James Jensen ,  Thomas Keyser

发明人： Todd Andrew Randazzo ,  Ronald James Jensen ,  Thomas Keyser

IPC分类号： H01L23/498

CPC分类号： H01L21/6835 ,  H01L21/764 ,  H01L23/3107 ,  H01L24/12 ,  H01L24/27 ,  H01L24/48 ,  H01L24/81 ,  H01L27/12 ,  H01L29/78654 ,  H01L31/02161 ,  H01L31/022408 ,  H01L31/101 ,  H01L31/115 ,  H01L2224/1148 ,  H01L2224/13099 ,  H01L2224/274 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/48465 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A hypersensitive semiconductor die structure is disclosed, in which flip-chip packaging is used in conjunction with a modified SOI die in which a thick silicon support substrate has been removed to increase sensitivity of the sensing device. Rather than being located beneath layers of interconnects and dielectric, the disclosed structure places the sensing devices close to the surface, more closely exposed to the environment in which sensing is to occur. The structure also allows for the placement of sensing films on nearer to the sensing devices and/or an oxide layer overlying the sensing devices.

摘要翻译： 公开了一种过敏半导体管芯结构，其中倒装芯片封装与已经去除厚硅支撑衬底的改进的SOI管芯结合使用以增加感测器件的灵敏度。 所公开的结构不是位于互连和电介质层之下，而是将感测装置放置在靠近表面的位置，更接近地暴露于将要进行感测的环境中。 该结构还允许将感测膜放置在更靠近感测装置和/或覆盖感测装置的氧化物层上。

公开(公告)号：US20070253663A1

公开(公告)日：2007-11-01

申请号：US11412738

申请日：2006-04-26

申请人： Thomas Keyser ,  Grenville Hughes

发明人： Thomas Keyser ,  Grenville Hughes

IPC分类号： G02B6/34 ,  G02B6/10

CPC分类号： G02B6/12 ,  G02B6/136 ,  G02B6/34 ,  G02B6/42 ,  G02B6/4204

摘要： An optoelectronic coupling structure, a method of manufacture, and a method of operation are described. The optical coupling structure includes a waveguide that is formed within a device layer of an SOI substrate. A prism is located on a bottom side of the SOI substrate. A BOX layer of the SOI substrate, which is interposed between the prism and the waveguide, serves as a spacer region, which promotes an optical coupling of the prism to the waveguide. By positioning the prism below the waveguide, an optoelectronic IC may more readily accommodate a prism. The prism may be directly fabricated in a bulk layer of the SOI substrate or directly bonded to a bottom side surface of the BOX layer.

摘要翻译： 描述了光电耦合结构，制造方法和操作方法。 光耦合结构包括形成在SOI衬底的器件层内的波导。 棱镜位于SOI衬底的底侧。 介于棱镜和波导之间的SOI衬底的BOX层用作间隔区域，其促进棱镜与波导的光耦合。 通过将棱镜定位在波导下方，光电子IC可以更容易地容纳棱镜。 棱镜可以直接制造在SOI衬底的本体层中或直接结合到BOX层的底侧表面。

公开(公告)号：US07177489B2

公开(公告)日：2007-02-13

申请号：US10915299

申请日：2004-08-10

申请人： Thomas Keyser ,  Cheisan J. Yue ,  Bradley J. Larsen

发明人： Thomas Keyser ,  Cheisan J. Yue ,  Bradley J. Larsen

IPC分类号： G02B1/01 ,  G02B6/10 ,  H01L21/302

CPC分类号： G02B6/132 ,  G02B6/131 ,  G02F1/025

摘要： The present invention provides silicon based thin-film structures that can be used to form high frequency optical modulators. Devices of the invention are formed as layered structures that have a thin-film dielectric layer, such as silicon dioxide, sandwiched between silicon layers. The silicon layers have high free carrier mobility. In one aspect of the invention a high mobility silicon layer can be provided by crystallizing an amorphous silicon layer. In another aspect of the invention, a high mobility silicon layer can be provided by using selective epitaxial growth and extended lateral overgrowth thereof.

摘要翻译： 本发明提供了可用于形成高频光学调制器的硅基薄膜结构。 本发明的器件形成为具有夹在硅层之间的诸如二氧化硅的薄膜电介质层的分层结构。 硅层具有高自由载流子迁移率。 在本发明的一个方面，可以通过使非晶硅层结晶来提供高迁移率硅层。 在本发明的另一方面，通过使用选择性外延生长和其延伸的横向过度生长，可以提供高迁移率硅层。

公开(公告)号：US06743662B2

公开(公告)日：2004-06-01

申请号：US10186494

申请日：2002-07-01

申请人： Mohammed A. Fathimulla ,  Thomas Keyser

发明人： Mohammed A. Fathimulla ,  Thomas Keyser

IPC分类号： H01L2144

CPC分类号： H01L21/76254 ,  Y10S148/012

摘要： An RF semiconductor device is fabricated from a starting substrate comprising a polysilicon handle wafer, a buried oxide layer over the polysilicon handle wafer, and a silicon layer over the oxide layer.

公开(公告)号：US6072278A

公开(公告)日：2000-06-06

申请号：US119512

申请日：1998-07-20

申请人： Thomas Keyser ,  Gerald D. Becker

发明人： Thomas Keyser ,  Gerald D. Becker

IPC分类号： H01L27/15 ,  H05B33/12 ,  H05B33/22 ,  H01J9/00

CPC分类号： H05B33/22 ,  H01L27/15 ,  H05B33/12

摘要： An electroluminescent device in accordance with the present invention includes a first conductive layer having a portion thereof for connecting to a gate of a blocking transistor formed on a substrate. A dielectric layer is formed on the first conductive layer, the dielectric layer having a dielectric constant of at least six. A second conductive layer is formed on the dielectric layer such that the first and second conductive layers have portions which form electrodes of a hold capacitor and the dielectric layer provides a capacitor dielectric between the electrodes such that the dielectric layer continuously covers the device. A pixel electrode is associated with and coupled to the blocking transistor. An electroluminescent stack and a transparent electrode are included wherein the electroluminescent stack is disposed between the transparent electrode and the pixel electrode such that when the blocking transistor is activated the pixel electrode associated therewith illuminates and is maintained in an illuminated state by the hold capacitor.

摘要翻译： 根据本发明的电致发光器件包括具有一部分用于连接到形成在衬底上的阻挡晶体管的栅极的第一导电层。 介电层形成在第一导电层上，电介质层的介电常数至少为6。 第二导电层形成在电介质层上，使得第一和第二导电层具有形成保持电容器的电极的部分，并且电介质层在电极之间提供电容器电介质，使得介电层连续地覆盖器件。 像素电极与阻塞晶体管相关联并耦合到阻挡晶体管。 包括电致发光堆叠和透明电极，其中电致发光堆叠设置在透明电极和像素电极之间，使得当阻挡晶体管被激活时，与其相关联的像素电极由保持电容器照亮并保持在照明状态。

公开(公告)号：US4762728A

公开(公告)日：1988-08-09

申请号：US801955

申请日：1985-11-26

申请人： Thomas Keyser ,  Bruce R. Cairns ,  Kranti V. Anand ,  William G. Petro ,  Michael L. Barry

发明人： Thomas Keyser ,  Bruce R. Cairns ,  Kranti V. Anand ,  William G. Petro ,  Michael L. Barry

IPC分类号： H01L21/28 ,  H01L21/318 ,  H01L21/762 ,  H01L21/763 ,  H01L29/51 ,  B05D3/06

CPC分类号： H01L21/28185 ,  H01L21/28 ,  H01L21/28202 ,  H01L21/3185 ,  H01L21/76202 ,  H01L21/76224 ,  H01L21/763 ,  H01L29/513 ,  H01L29/518

摘要： A silicon nitride layer is prepared on the surface of a silicon substrate by carrying out a surface reaction on the substrate in a vacuum chamber that contains an electrode which is capacitively coupled to an rf generator. A second electrode within the chamber, or a metal wall of the chamber itself, is connected to ground. The silicon substrates to be treated are placed on one of the electrodes to be in electrical and physical contact therewith, and a reagent gas that contains nitrogen is introduced into the chamber. An rf voltage is then applied between the electrodes to ionize and activate the gas, and cause ions and other active species thereof to be directed into the silicon substrate. The nitrogen ions and other active species that are created as a result of the application of the rf power can be directed at the surface of a number of wafers simultaneously. The thin nitride films that are formed by the process have application both as barriers for device isolation and as dielectric components of electrical devices.

摘要翻译： 通过在包含电容耦合到rf发生器的电极的真空室中在衬底上进行表面反应，在硅衬底的表面上制备氮化硅层。 室内的第二电极或腔室本身的金属壁连接到地面。 要处理的硅衬底被放置在电极中的一个电极上并与其物理接触，并且将含有氮的反应气体引入室中。 然后在电极之间施加rf电压以电离和激活气体，并且使离子和其它活性物质被引导到硅衬底中。 作为施加射频功率的结果产生的氮离子和其它活性物质可以同时指向多个晶片的表面。 通过该方法形成的薄氮化物膜既可用作器件隔离的障碍，也可用作电气器件的介电元件。