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公开(公告)号：US11183398B2
公开(公告)日：2021-11-23
申请号：US16407272
申请日：2019-05-09
发明人： Zhiying Chen , Alok Ranjan , Peter Ventzek
IPC分类号： H01L21/321 , H01L21/3213 , H01L21/033 , H01L21/3065
摘要： A process is provided in which a hard mask material comprising ruthenium is used. Ruthenium provides a hard mask material that is etch resistant to many of the plasma chemistries typically used for processing substrate patterning layers, including layers such as, for example, nitrides, oxides, anti-reflective coating (ARC) materials, etc. Further, ruthenium may be removed by plasma chemistries that do not remove nitrides, oxides, ARC materials, etc. For example, ruthenium may be easily removed through the use of an oxygen (O2) plasma. Further, ruthenium may be deposited as a thin planar 10 nm order film over oxides and nitrides and may be deposited as a planar layer.
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公开(公告)号：US11094543B1
公开(公告)日：2021-08-17
申请号：US17111652
申请日：2020-12-04
发明人： Yun Han , Peter Ventzek , Alok Ranjan
IPC分类号： H01L21/033 , H01L21/311 , H01L21/02
摘要： A method for forming a semiconductor device includes depositing a metal resist layer over a layer to be patterned that is formed over a substrate; patterning the metal resist layer using a lithography process to form a patterned metal resist layer and expose portions of the layer to be patterned; selectively depositing a silicon containing layer over the patterned resist layer by exposing the substrate to a gas mixture comprising a silicon precursor, the silicon containing layer being preferentially deposited over a top surface of the metal resist layer; and performing a surface cleaning process by exposing the layer to be patterned and the patterned metal resist layer covered with the silicon containing layer to a plasma process with an etch chemistry comprising a halogen or hydrogen.
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公开(公告)号：US20210210355A1
公开(公告)日：2021-07-08
申请号：US16737716
申请日：2020-01-08
发明人： Peter Ventzek , Alok Ranjan
IPC分类号： H01L21/311 , H01J37/32 , H01L21/67 , H01L21/768 , H01L21/02 , H01L21/683 , C23C16/455
摘要： A method of plasma processing includes continuously providing a gas into a processing chamber and AC source power to a source power coupling element for a first duration. The AC source power generates a plasma in the processing chamber. The method further includes, while providing the gas and the AC source power, applying a first negative bias voltage to an electron source electrode for a second duration and removing the first negative bias voltage from the electron source electrode for a third duration to discontinue the generation of the electron beam at the end of the second duration. The first negative bias voltage generates an electron beam directed towards a substrate holder. The method also includes applying a second negative bias voltage to the substrate holder while providing the gas and the AC power. The first duration is equal to the sum of the second duration and the third duration.
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公开(公告)号：US20200273992A1
公开(公告)日：2020-08-27
申请号：US16782680
申请日：2020-02-05
发明人： Sergey Voronin , Christopher Catano , Sang Cheol Han , Shyam Sridhar , Yusuke Yoshida , Christopher Talone , Alok Ranjan
IPC分类号： H01L29/78 , H01L21/3213 , H01L21/02 , H01L21/3065
摘要： Residue at the base of a feature in a substrate to be etched is limited so that improved profiles may be obtained when forming vertical, narrow pitch, high aspect ratio features, for example fin field effect transistor (FinFET) gates. A thin bottom layer of the feature is formed of a different material than the main layer of the feature. The bottom material may be comprised of a material that preferentially etches and/or preferentially oxidizes as compared to the main layer. The bottom layer may comprise silicon germanium. The preferential etching characteristics may provide a process in which un-etched residuals do not remain. Even if residuals remain, after etch of the feature, an oxidation process may be performed. Enhanced oxidation rates of the bottom material allow any remaining residual to be oxidized. Plasma oxidation may be used. The oxidized material may then be removed by utilizing standard oxide removal mechanisms.
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公开(公告)号：US20200075734A1
公开(公告)日：2020-03-05
申请号：US16558865
申请日：2019-09-03
发明人： Cedric Thomas , Andrew Nolan , Alok Ranjan
IPC分类号： H01L29/40 , H01L29/66 , H01L21/033 , H01L21/3213
摘要： Methods and systems for surface modification are described. In an embodiment, a method of etching includes providing a substrate having a device structure, portions of which are identified for modification. Such a method may also include passivating target surfaces of the device structure by exposing the device structure to a gas-phase composition at a processing pressure equal to or greater than 100 mTorr to form a protection layer on the target surfaces. Other embodiments of a method may include providing a substrate having a device structure, portions of which identified for removal. Such methods may further include passivating target surfaces of the device structure by exposing the device structure to a gas-phase composition, wherein the ratio of the radical content to the ion content exceeds 10-to-1.
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16.发明授权公开(公告)号：US10446405B2
公开(公告)日：2019-10-15
申请号：US15904157
申请日：2018-02-23
发明人： Sonam D. Sherpa , Alok Ranjan
IPC分类号： H01L21/3065 , H01L21/033 , H01L21/311 , H01L21/308 , H01L21/3213 , H01L21/768
摘要： A method of preparing a self-aligned block (SAB) structure is described. The method includes providing a substrate having raised features defined by a first material containing silicon nitride and a second material containing silicon oxide formed on side walls of the first material, and a third material containing an organic material covering some of the raised features and exposing some raised features according to a block pattern formed in the third material. The method further includes forming a first chemical mixture by plasma-excitation of a first process gas containing H and optionally a noble gas, and exposing the first material on the substrate to the first chemical mixture. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas containing N, F, O, and optionally a noble element, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second and third material.
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公开(公告)号：US20190259623A1
公开(公告)日：2019-08-22
申请号：US16277760
申请日：2019-02-15
发明人： Shyam Sridhar , Nayoung Bae , Sergey Voronin , Alok Ranjan
IPC分类号： H01L21/3065 , H01L21/311 , H01L21/3213
摘要： Sidewall etching of substrate features may be achieved by employing an etch stop layer formed over the features. The etch stop layer is thinner on sidewalls of the features as compared to the bottom of the features. The lateral etching of the features is achieved by use of an over etch which breaks through the etch stop layer on the sidewalls of the features but does not break through the etch stop layer formed at the bottom of the features. The use of the etch stop layer allows for lateral etching while preventing unwanted vertical etching. The lateral etching may be desirable for use in a number of structures, including but not limited to 3D structures. The lateral etching may also be used to provide vertical sidewalls by reducing the sidewall taper angle.
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公开(公告)号：US10340137B2
公开(公告)日：2019-07-02
申请号：US15658133
申请日：2017-07-24
发明人： Peter Ventzek , Alok Ranjan
IPC分类号： C23C14/02 , C23C16/32 , H01L21/02 , C23C16/455 , H01L21/3105
摘要： A method of forming a thin film is described. The method includes treating at least a portion of a surface exposed on a substrate with an adsorption-promoting agent to alter a functionality of the exposed surface and cause subsequent adsorption of an organic precursor, and thereafter, adsorbing the organic precursor to the functionalized surface to form a carbon-containing film. Then, at least a portion of the surface of the carbon-containing film is exposed to an ion flux to mix the adsorbed carbon-containing film with the material of the underlying substrate and form a mixed film.
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公开(公告)号：US10237916B2
公开(公告)日：2019-03-19
申请号：US14871518
申请日：2015-09-30
发明人： Sergey A. Voronin , Alok Ranjan
摘要： This disclosure relates to a temperature control system that may be used in a plasma processing system that treats microelectronic substrates using plasma. The temperature control system may include a heating array disposed adjacent to the microelectronic substrate and that may selectively generate heat at different portions of the microelectronic substrate. The heating array may include heating modules that selectively generate heat depending upon a breakover voltage of a Silicon Diode for Alternating Current (SIDAC). The amount of heat generated heat may depend upon the resistance of the heating module and the duty cycle of the variable voltage signal.
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公开(公告)号：US20190080926A1
公开(公告)日：2019-03-14
申请号：US16128001
申请日：2018-09-11
IPC分类号： H01L21/311 , H01L21/02 , H01L21/67
摘要： Provided is a method of modifying a surface of a substrate for improved etch selectivity of nitride etching. In an embodiment, the method includes providing a substrate with a nitride-containing structure, the nitride-containing structure having an oxygen-nitrogen layer. The method may also include performing a surface modification process on the nitride-containing structure with the oxygen-nitrogen layer using one or more gases, the surface modification process generating a cleaned nitride-containing structure. Additionally, the method may include performing a nitride etch process using the cleaned nitride-containing structure, wherein the etched nitride-containing structure are included in 5 nm or lower technology nodes, and the nitride etch process meets target etch rate and target etch selectivity, and the cleaned nitride-containing structure meet target residue cleaning objectives.
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