公开(公告)号：US11728135B2

公开(公告)日：2023-08-15

申请号：US14932057

申请日：2015-11-04

申请人： TOKYO ELECTRON LIMITED

发明人： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Zhiying Chen

IPC分类号： H01J37/32 ,  H01L21/3065 ,  H01L21/67

CPC分类号： H01J37/32009 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32697 ,  H01J37/32715 ,  H01L21/3065 ,  H01L21/67069

摘要： This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. In one embodiment, the plasma density may be controlled by reducing the rate of loss of ions to the chamber wall during processing. This may include biasing a dual electrode ring assembly in the plasma chamber to alter the potential difference between the chamber wall region and the bulk plasma region.

公开(公告)号：US20210082668A1

公开(公告)日：2021-03-18

申请号：US16572696

申请日：2019-09-17

申请人： Tokyo Electron Limited

发明人： Peter Ventzek ,  Barton Lane ,  Zhiying Chen ,  Alok Ranjan

IPC分类号： H01J37/32 ,  H01J37/06

摘要： A plasma processing apparatus includes a processing chamber, a substrate disposed in the processing chamber, and a plurality of electron sources configured to supply electrons to a plasma generated in the processing chamber. Each of the plurality of electron sources includes a first side facing the plasma in the processing chamber. Each of the plurality of electron sources also includes a resonant structure disposed at the first side and configured to be held at a negative direct current bias voltage.

公开(公告)号：US09978568B2

公开(公告)日：2018-05-22

申请号：US14168565

申请日：2014-01-30

申请人： Tokyo Electron Limited

发明人： Zhiying Chen ,  Lee Chen ,  Merritt Funk

IPC分类号： H01J37/30 ,  H01J37/32

CPC分类号： H01J37/32899 ,  H01J37/30 ,  H01J37/32082 ,  H01J37/3233

摘要： A processing system is disclosed, having an electron beam source chamber that excites plasma to generate an electron beam, and an ion beam source chamber that houses a substrate and also excites plasma to generate an ion beam. The processing system also includes a dielectric injector coupling the electron beam source chamber to the ion beam source chamber that simultaneously injects the electron beam and the ion beam and propels the electron beam and the ion beam in opposite directions. The voltage potential gradient between the electron beam source chamber and the ion beam source chamber generates an energy field that is sufficient to maintain the electron beam and ion beam as a plasma treats the substrate so that radio frequency (RF) power initially applied to the processing system to generate the electron beam can be terminated thus improving the power efficiency of the processing system.

公开(公告)号：US09697993B2

公开(公告)日：2017-07-04

申请号：US14534460

申请日：2014-11-06

申请人： Tokyo Electron Limited

发明人： Lee Chen ,  Zhiying Chen

IPC分类号： C23F1/00 ,  H01L21/306 ,  H01J37/32

CPC分类号： H01J37/32935 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32697 ,  H01J37/32899 ,  H01L21/3065 ,  H01L21/67069

摘要： This disclosure relates to a plasma processing system for controlling plasma density across a substrate and maintaining a tight ion energy distribution within the plasma. In one embodiment, this may include using a dual plasma chamber system including a non-ambipolar plasma chamber and a DC plasma chamber adjacent to the non-ambipolar system. The DC plasma chamber provide power to generate the plasma by rotating the incoming power between four inputs from a VHF power source. In one instance, the power to each of the four inputs are at least 90 degrees out of phase from each other.

公开(公告)号：US20160268136A1

公开(公告)日：2016-09-15

申请号：US15164312

申请日：2016-05-25

申请人： TOKYO ELECTRON LIMITED

发明人： Lee Chen ,  Zhiying Chen ,  Jianping Zhao ,  Merritt Funk

IPC分类号： H01L21/263 ,  H01J37/32 ,  H01L21/67

CPC分类号： H01L21/263 ,  H01J37/32431 ,  H01J37/32568 ,  H01J37/32697 ,  H01L21/67069

摘要： This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system that may be configured to enable non-ambipolar diffusion to counter ion loss to the chamber wall. The plasma processing system may include a ring cavity coupled to the plasma processing system that is in fluid communication with plasma generated in the plasma processing system. The ring cavity may be coupled to a power source to form plasma that may diffuse ions into the plasma processing system to minimize the impact of ion loss to the chamber wall.

摘要翻译： 本公开涉及一种等离子体处理系统，用于控制正被处理的衬底的边缘或周边附近的等离子体密度。 等离子体处理系统可以包括等离子体室，其可以使用等离子体接收和处理衬底，用于蚀刻衬底，掺杂衬底或在衬底上沉积膜。 本公开涉及等离子体处理系统，其可以被配置为使得非双极扩散能够抵消对室壁的离子损失。 等离子体处理系统可以包括耦合到等离子体处理系统的环形空腔，该等离子体处理系统与等离子体处理系统中产生的等离子体流体连通。 环腔可以耦合到电源以形成等离子体，其可以将离子扩散到等离子体处理系统中以最小化离子损失对室壁的影响。

公开(公告)号：US20140273538A1

公开(公告)日：2014-09-18

申请号：US14212438

申请日：2014-03-14

申请人： Tokyo Electron Limited

发明人： Lee Chen ,  Zhiying Chen ,  Jianping Zhao ,  Merritt Funk

IPC分类号： H01L21/263

CPC分类号： H01L21/263 ,  H01J37/32431 ,  H01J37/32568 ,  H01J37/32697 ,  H01L21/67069

摘要： This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system that may be configured to enable non-ambipolar diffusion to counter ion loss to the chamber wall. The plasma processing system may include a ring cavity coupled to the plasma processing system that is in fluid communication with plasma generated in the plasma processing system. The ring cavity may be coupled to a power source to form plasma that may diffuse ions into the plasma processing system to minimize the impact of ion loss to the chamber wall.

摘要翻译： 本公开涉及一种等离子体处理系统，用于控制正被处理的衬底的边缘或周边附近的等离子体密度。 等离子体处理系统可以包括等离子体室，其可以使用等离子体接收和处理衬底，用于蚀刻衬底，掺杂衬底或在衬底上沉积膜。 本公开涉及等离子体处理系统，其可以被配置为使得非双极扩散能够抵消对室壁的离子损失。 等离子体处理系统可以包括耦合到等离子体处理系统的环形空腔，该等离子体处理系统与等离子体处理系统中产生的等离子体流体连通。 环腔可以耦合到电源以形成等离子体，其可以将离子扩散到等离子体处理系统中以最小化离子损失对室壁的影响。

公开(公告)号：US20230117812A1

公开(公告)日：2023-04-20

申请号：US17451094

申请日：2021-10-15

申请人： Tokyo Electron Limited

发明人： Zhiying Chen ,  Barton Lane ,  Yun Han ,  Peter Lowell George Ventzek ,  Alok Ranjan

IPC分类号： H01J37/32

摘要： A method for plasma processing includes: sustaining a plasma in a plasma processing chamber, the plasma processing chamber including a first radio frequency (RF) electrode and a second RF electrode, where sustaining the plasma includes: coupling an RF source signal to the first RF electrode; and coupling a bias signal between the first RF electrode and the second RF electrode, the bias signal having a bipolar DC (B-DC) waveform including a plurality of B-DC pulses, each of the B-DC pulses including: a negative bias duration during which the pulse has negative polarity relative to a reference potential, a positive bias duration during which the pulse has positive polarity relative to the reference potential, and a neutral bias duration during which the pulse has neutral polarity relative to the reference potential.

公开(公告)号：US09111873B2

公开(公告)日：2015-08-18

申请号：US14054902

申请日：2013-10-16

申请人： Tokyo Electron Limited

发明人： Lee Chen ,  Jianping Zhao ,  Merritt Funk ,  Zhiying Chen

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H01J37/32

CPC分类号： H01L21/3065 ,  H01J37/32422 ,  H01J37/3266 ,  H01L21/683

摘要： A plasma processing apparatus includes a processing chamber having a plasma processing space therein and a substrate support in the processing chamber at a first end for supporting a substrate. A plasma source is coupled into the processing space and configured to form a plasma at a second end of the processing chamber opposite said first end. The apparatus further includes a magnetic grid having an intensity of a magnetic flux therein, a plurality of passageways penetrating from a first side to a second side, a thickness, a transparency, a passageway aspect ratio, and a position within the processing chamber between the second end and the substrate. The intensity, the thickness, the transparency, the passageway aspect ratio, and the position are configured to cause electrons having energies above an acceptable maximum level to divert from the direction. A method of obtaining low average electron energy flux onto the substrate is also provided.

摘要翻译： 等离子体处理装置包括其中具有等离子体处理空间的处理室和用于支撑基板的第一端处于处理室中的基板支撑件。 等离子体源耦合到处理空间中并且被配置为在与第一端相对的处理室的第二端处形成等离子体。 该装置还包括具有其中的磁通强度的磁栅格，从第一侧穿透到第二侧的多个通道，厚度，透明度，通道纵横比以及处理室内的位置 第二端和衬底。 强度，厚度，透明度，通道长宽比和位置被配置为使能量高于可接受的最大电平的电子从该方向转移。 还提供了一种在基板上获得低平均电子能量通量的方法。

公开(公告)号：US20150126037A1

公开(公告)日：2015-05-07

申请号：US14534460

申请日：2014-11-06

申请人： Tokyo Electron Limited

发明人： Lee Chen ,  Zhiying Chen

IPC分类号： H01J37/32 ,  H01L21/3065 ,  H01L21/67

CPC分类号： H01J37/32935 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32697 ,  H01J37/32899 ,  H01L21/3065 ,  H01L21/67069

摘要： This disclosure relates to a plasma processing system for controlling plasma density across a substrate and maintaining a tight ion energy distribution within the plasma. In one embodiment, this may include using a dual plasma chamber system including a non-ambipolar plasma chamber and a DC plasma chamber adjacent to the non-ambipolar system. The DC plasma chamber provide power to generate the plasma by rotating the incoming power between four inputs from a VHF power source. In one instance, the power to each of the four inputs are at least 90 degrees out of phase from each other.

摘要翻译： 本公开涉及一种等离子体处理系统，用于控制衬底上的等离子体密度并维持等离子体内紧密的离子能量分布。 在一个实施例中，这可以包括使用包括非双极等离子体室和与非双极系统相邻的DC等离子体室的双等离子体室系统。 DC等离子体室通过在VHF电源的四个输入之间旋转输入功率而提供功率以产生等离子体。 在一种情况下，四个输入中的每一个的功率彼此相位至少为90度。

公开(公告)号：US20140360670A1

公开(公告)日：2014-12-11

申请号：US14026092

申请日：2013-09-13

申请人： Tokyo Electron Limited

发明人： Lee Chen ,  Merritt Funk ,  Zhiying Chen

IPC分类号： H01J37/32

CPC分类号： H01J37/32357

摘要： A processing system is disclosed, having a plasma source chamber that excites source plasma to generate an electron beam, and a process chamber that houses a substrate for exposure of the substrate to the electron beam. The processing system also includes an electron injector that injects electrons from the source plasma into the electron beam as the electron beam enters the process chamber. The electron beam includes a substantially equal number of electrons and positively charged ions in the process chamber. In one embodiment, the processing system also includes a magnetic field generator that generates a magnetic field in the process chamber to capture the electrons included in the electron beam to generate a voltage potential between the magnetic field generator and the substrate. The voltage potential accelerates the positively charged ions to the substrate and minimizes the electrons that reach the substrate.

摘要翻译： 公开了一种处理系统，其具有激发源等离子体以产生电子束的等离子体源室，以及容纳用于将衬底暴露于电子束的衬底的处理室。 处理系统还包括电子注入器，当电子束进入处理室时，电子注入器将电子从源等离子体注入电子束。 电子束在处理室中包括基本上相等数量的电子和带正电荷的离子。 在一个实施例中，处理系统还包括磁场发生器，其在处理室中产生磁场以捕获包括在电子束中的电子，以在磁场发生器和衬底之间产生电压电位。 电压电位将带正电荷的离子加速到衬底并使到达衬底的电子最小化。