MOUNTING TABLE AND PLASMA PROCESSING APPARATUS
    11.
    发明申请
    MOUNTING TABLE AND PLASMA PROCESSING APPARATUS 审中-公开
    安装台和等离子体加工设备

    公开(公告)号:US20140202635A1

    公开(公告)日:2014-07-24

    申请号:US14160735

    申请日:2014-01-22

    Abstract: A mounting table includes an electrostatic chuck having a mounting surface and a backside opposite to the mounting surface, a first through hole being formed in the mounting table; a base joined to the backside of the electrostatic chuck and having a second through hole in communication with the first through hole; a lifter pin which is received in a pin hole formed by the first through hole and the second through hole, the lifter pin being movable up and down to protrude beyond and retract below the mounting surface. An upper end portion of the lifter pin has a shape in which a diameter decreases toward a lower end of the lifter pin to correspond to a shape of the upper end portion of the pin hole. The upper end portion of the lifter pin is in surface contact with the upper end portion of the pin hole.

    Abstract translation: 安装台包括具有安装表面和与安装表面相对的后侧的静电卡盘,在安装台上形成有第一通孔; 连接到所述静电卡盘的背面并具有与所述第一通孔连通的第二通孔的基座; 收纳在由所述第一通孔和所述第二通孔形成的销孔中的升降销,所述升降销可上下移动,突出超过所述安装面的下方。 提升销的上端部具有直径朝向升降销的下端减小的形状,以对应于销孔的上端部的形状。 升降销的上端部与销孔的上端部表面接触。

    PLASMA PROCESSING APPARATUS, PLASMA STATE DETECTION METHOD, AND PLASMA STATE DETECTION PROGRAM

    公开(公告)号:US20210020418A1

    公开(公告)日:2021-01-21

    申请号:US16978134

    申请日:2019-06-17

    Abstract: A measurement part controls power supplied to a heater such that a temperature of the heater becomes constant by using a heater controller, and measures the supplied power in an unignited state in which plasma is not ignited and a transient state in which the power supplied to the heater decreases after plasma is ignited. A parameter calculator performs fitting on a calculation model, which includes a heat input amount from the plasma as a parameter, for calculating the power supplied in the transient state by using the power supplied in the unignited state and the transient state and measured by the measurement part, and calculates the heat input amount. An output part configured to output information based on the heat input amount calculated by the parameter calculator.

    SUBSTRATE SUPPORT AND PLASMA PROCESSING APPARATUS

    公开(公告)号:US20220301833A1

    公开(公告)日:2022-09-22

    申请号:US17834758

    申请日:2022-06-07

    Inventor: Daisuke HAYASHI

    Abstract: A substrate support is provided. The substrate support includes a main body having a substrate supporting region and an annular region surrounding the substrate supporting region. The substrate support further includes a first ring disposed on the annular region and having a through-hole, a second ring disposed on the first ring and having an inner peripheral surface facing an end surface of a substrate on the substrate supporting region. The substrate support further includes a lift pin including a lower rod and an upper rod, wherein the lower rod has an upper end surface to be in contact with the first ring, and the upper rod extends upward from the upper end surface of the lower rod to be in contact with the second ring through the through-hole of the first ring and has a length greater than a length of the through-hole.

    DEVICE FOR SUPPORTING SUBSTRATE HAVING THERMAL EXPANSION COEFFICIENT

    公开(公告)号:US20210305077A1

    公开(公告)日:2021-09-30

    申请号:US17192081

    申请日:2021-03-04

    Inventor: Daisuke HAYASHI

    Abstract: A device for supporting a substrate having a thermal expansion coefficient, includes: a base; an electrostatic chuck disposed on the base and having a substrate supporting region, the electrostatic chuck having a thermal expansion coefficient different from the thermal expansion coefficient of the substrate; and an annular elastic seal disposed on the substrate supporting region so as to make contact with the substrate supported on the substrate supporting region.

    SUBSTRATE SUPPORT AND PLASMA PROCESSING APPARATUS

    公开(公告)号:US20210098238A1

    公开(公告)日:2021-04-01

    申请号:US17032930

    申请日:2020-09-25

    Inventor: Daisuke HAYASHI

    Abstract: A substrate support is provided. The substrate support includes a main body having a substrate supporting region and an annular region surrounding the substrate supporting region. The substrate support further includes a first ring disposed on the annular region and having a through-hole, a second ring disposed on the first ring and having an inner peripheral surface facing an end surface of a substrate on the substrate supporting region. The substrate support further includes a lift pin including a lower rod and an upper rod, wherein the lower rod has an upper end surface to be in contact with the first ring, and the upper rod extends upward from the upper end surface of the lower rod to be in contact with the second ring through the through-hole of the first ring and has a length greater than a length of the through-hole.

    ELECTROSTATIC CHUCK, PLACING TABLE, PLASMA PROCESSING APPARATUS, AND METHOD OF MANUFACTURING ELECTROSTATIC CHUCK
    17.
    发明申请
    ELECTROSTATIC CHUCK, PLACING TABLE, PLASMA PROCESSING APPARATUS, AND METHOD OF MANUFACTURING ELECTROSTATIC CHUCK 审中-公开
    静电卡盘,放置台,等离子体加工装置及制造静电卡盘的方法

    公开(公告)号:US20150243541A1

    公开(公告)日:2015-08-27

    申请号:US14630730

    申请日:2015-02-25

    Inventor: Daisuke HAYASHI

    Abstract: Disclosed is an electrostatic chuck configured to hold a processing target object. The electrostatic chuck includes a dielectric substrate and a protective film. The substrate has a surface which is constituted by a bottom face, and a plurality of projecting portions. The plurality of projecting portions is formed to protrude from the bottom face. Each of the projecting portions includes a top face, and a side face. The top face comes in contact with the processing target object, and the side face extends from the bottom face to the top face. The protective film is made of yttrium oxide. The protective film is formed on the side faces of the plurality of projecting portions and the bottom face such that the top faces are exposed.

    Abstract translation: 公开了一种被配置为保持处理对象物体的静电卡盘。 静电卡盘包括电介质基板和保护膜。 基板具有由底面和多个突出部构成的表面。 多个突出部形成为从底面突出。 每个突出部分包括顶面和侧面。 顶面与加工对象物接触,侧面从底面延伸到顶面。 保护膜由氧化钇制成。 保护膜形成在多个突出部和底面的侧面上,使得顶面露出。

    PLASMA ETCHING APPARATUS
    18.
    发明申请
    PLASMA ETCHING APPARATUS 审中-公开
    等离子体蚀刻装置

    公开(公告)号:US20140069585A1

    公开(公告)日:2014-03-13

    申请号:US14019023

    申请日:2013-09-05

    Abstract: Disclosed is a plasma etching apparatus which includes: a base formed of a metal that has a lower expansion coefficient than aluminum; an electrostatic chuck disposed on a mounting surface of the base and configured to mount an object to be processed; a bonding layer which bonds the base to the electrostatic chuck; and a heater provided within the electrostatic chuck. In the plasma etching apparatus, the base is provided with a metal portion that is formed through a cold spraying by using a metal that has a higher thermal conductivity than the metal for forming the base.

    Abstract translation: 公开了一种等离子体蚀刻装置,其包括:具有比铝更低的膨胀系数的由金属形成的基座; 设置在所述基座的安装面上且被构造成安装被加工物的静电卡盘; 键合层,其将基底粘合到静电卡盘; 以及设置在静电卡盘内的加热器。 在等离子体蚀刻装置中,基底设置有通过使用具有比用于形成基底的金属更高的导热性的金属通过冷喷涂形成的金属部分。

    COOLING BLOCK FORMING ELECTRODE
    19.
    发明申请
    COOLING BLOCK FORMING ELECTRODE 审中-公开
    冷却成型电极

    公开(公告)号:US20130168369A1

    公开(公告)日:2013-07-04

    申请号:US13667226

    申请日:2012-11-02

    CPC classification number: H05H1/46 H01J37/32009 H01J37/32724

    Abstract: The present invention is a cooling block that forms an electrode for generating a plasma for use in a plasma process, and includes a channel for a cooling liquid, the cooling block comprising: a first base material and a second base material respectively made of aluminum, at least one of the first and second base materials having a recess for forming a channel for a cooling liquid; and a diffusion bonding layer, in which zinc is diffused in aluminum, and an anti-corrosion layer of a zinc oxide film, the layers being formed by interposing zinc between the first and second base materials, and by bonding the first and second base materials with zinc interposed therebetween in a heating atmosphere containing oxygen.

    Abstract translation: 本发明是一种冷却块,其形成用于产生用于等离子体处理的等离子体的电极,并且包括用于冷却液体的通道,所述冷却块包括:分别由铝制成的第一基材和第二基材, 所述第一和第二基底材料中的至少一个具有用于形成用于冷却液体的通道的凹部; 以及锌在铝中扩散的扩散接合层和氧化锌膜的防腐蚀层,所述层通过在第一和第二基底材料之间插入锌而形成,并且通过将第一和第二基底材料 在含有氧的加热气氛中夹有锌。

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