Abstract:
A mounting table includes an electrostatic chuck having a mounting surface and a backside opposite to the mounting surface, a first through hole being formed in the mounting table; a base joined to the backside of the electrostatic chuck and having a second through hole in communication with the first through hole; a lifter pin which is received in a pin hole formed by the first through hole and the second through hole, the lifter pin being movable up and down to protrude beyond and retract below the mounting surface. An upper end portion of the lifter pin has a shape in which a diameter decreases toward a lower end of the lifter pin to correspond to a shape of the upper end portion of the pin hole. The upper end portion of the lifter pin is in surface contact with the upper end portion of the pin hole.
Abstract:
A measurement part controls power supplied to a heater such that a temperature of the heater becomes constant by using a heater controller, and measures the supplied power in an unignited state in which plasma is not ignited and a transient state in which the power supplied to the heater decreases after plasma is ignited. A parameter calculator performs fitting on a calculation model, which includes a heat input amount from the plasma as a parameter, for calculating the power supplied in the transient state by using the power supplied in the unignited state and the transient state and measured by the measurement part, and calculates the heat input amount. An output part configured to output information based on the heat input amount calculated by the parameter calculator.
Abstract:
A placing table on an embodiment includes a supporting member and a base. The supporting member includes a placing region provided with a heater, and an outer peripheral region surrounding the placing region. The base includes a first region supporting the placing region thereon, and a second region surrounding the first region. In the second region, through holes are formed. Wirings electrically connected to the heater passes through the through holes of the second region.
Abstract:
A substrate support is provided. The substrate support includes a main body having a substrate supporting region and an annular region surrounding the substrate supporting region. The substrate support further includes a first ring disposed on the annular region and having a through-hole, a second ring disposed on the first ring and having an inner peripheral surface facing an end surface of a substrate on the substrate supporting region. The substrate support further includes a lift pin including a lower rod and an upper rod, wherein the lower rod has an upper end surface to be in contact with the first ring, and the upper rod extends upward from the upper end surface of the lower rod to be in contact with the second ring through the through-hole of the first ring and has a length greater than a length of the through-hole.
Abstract:
A device for supporting a substrate having a thermal expansion coefficient, includes: a base; an electrostatic chuck disposed on the base and having a substrate supporting region, the electrostatic chuck having a thermal expansion coefficient different from the thermal expansion coefficient of the substrate; and an annular elastic seal disposed on the substrate supporting region so as to make contact with the substrate supported on the substrate supporting region.
Abstract:
A substrate support is provided. The substrate support includes a main body having a substrate supporting region and an annular region surrounding the substrate supporting region. The substrate support further includes a first ring disposed on the annular region and having a through-hole, a second ring disposed on the first ring and having an inner peripheral surface facing an end surface of a substrate on the substrate supporting region. The substrate support further includes a lift pin including a lower rod and an upper rod, wherein the lower rod has an upper end surface to be in contact with the first ring, and the upper rod extends upward from the upper end surface of the lower rod to be in contact with the second ring through the through-hole of the first ring and has a length greater than a length of the through-hole.
Abstract:
Disclosed is an electrostatic chuck configured to hold a processing target object. The electrostatic chuck includes a dielectric substrate and a protective film. The substrate has a surface which is constituted by a bottom face, and a plurality of projecting portions. The plurality of projecting portions is formed to protrude from the bottom face. Each of the projecting portions includes a top face, and a side face. The top face comes in contact with the processing target object, and the side face extends from the bottom face to the top face. The protective film is made of yttrium oxide. The protective film is formed on the side faces of the plurality of projecting portions and the bottom face such that the top faces are exposed.
Abstract:
Disclosed is a plasma etching apparatus which includes: a base formed of a metal that has a lower expansion coefficient than aluminum; an electrostatic chuck disposed on a mounting surface of the base and configured to mount an object to be processed; a bonding layer which bonds the base to the electrostatic chuck; and a heater provided within the electrostatic chuck. In the plasma etching apparatus, the base is provided with a metal portion that is formed through a cold spraying by using a metal that has a higher thermal conductivity than the metal for forming the base.
Abstract:
The present invention is a cooling block that forms an electrode for generating a plasma for use in a plasma process, and includes a channel for a cooling liquid, the cooling block comprising: a first base material and a second base material respectively made of aluminum, at least one of the first and second base materials having a recess for forming a channel for a cooling liquid; and a diffusion bonding layer, in which zinc is diffused in aluminum, and an anti-corrosion layer of a zinc oxide film, the layers being formed by interposing zinc between the first and second base materials, and by bonding the first and second base materials with zinc interposed therebetween in a heating atmosphere containing oxygen.