公开(公告)号：US20160225623A1

公开(公告)日：2016-08-04

申请号：US15008529

申请日：2016-01-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hidetami YAEGASHI

IPC: H01L21/033 ,  H01L21/027

CPC classification number: H01L21/0338 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/76816

Abstract: Disclosed is a method for manufacturing a semiconductor device. The method includes: a first pattern forming step of forming, on a pattern forming target film, a first film that is patterned to have a first pattern that includes lines which are aligned with each other with spaces of a predetermined interval being interposed therebetween, and include a portion separated by using a first cut mask; a step of forming a second film to cover a surface of the first film; and a second pattern forming step of forming a pattern forming target film that is patterned to have a second pattern, by separating a portion of the space of the first step using a second cut mask. The first and second cut mask includes a plurality of openings or light shielding portions that have equal shapes, respectively.

Abstract translation: 公开了半导体器件的制造方法。 该方法包括：第一图案形成步骤，在图案形成目标膜上形成第一膜，其被图案化以具有第一图案，该第一图案包括彼此间隔一定间隔的间隔彼此对准的线;以及 包括通过使用第一切割掩模分离的部分; 形成第二膜以覆盖第一膜的表面的步骤; 以及第二图案形成步骤，通过使用第二切割掩模分离第一台阶的空间的一部分来形成图案化以具有第二图案的图案形成目标膜。 第一和第二切割掩模分别具有相同形状的多个开口或遮光部分。

公开(公告)号：US20150227047A1

公开(公告)日：2015-08-13

申请号：US14619554

申请日：2015-02-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hidetami YAEGASHI

IPC: G03F7/20 ,  H01L21/027 ,  G03F7/16 ,  H01L21/67

CPC classification number: H01L21/0274 ,  G03F7/2024 ,  H01L21/31144 ,  H01L21/67178 ,  H01L21/67225

Abstract: A manufacturing a semiconductor device of the present disclosure includes coating a photosensitive material on a workpiece; exposing the photosensitive material using a first exposure mask; performing a positive-tone development on the photosensitive material using a first developer after the first exposing; exposing the photosensitive material using a second exposure mask after the first developing; and performing a negative-tone development on the photosensitive material using a second developer after the second exposing.

Abstract translation: 制造本公开的半导体器件包括将感光材料涂覆在工件上; 使用第一曝光掩模曝光感光材料; 在第一曝光之后使用第一显影剂在感光材料上进行正色调发展; 在第一显影之后使用第二曝光掩模曝光感光材料; 以及在第二曝光之后使用第二显影剂在感光材料上进行负色调显影。

公开(公告)号：US20190355613A1

公开(公告)日：2019-11-21

申请号：US16406059

申请日：2019-05-08

Applicant: Tokyo Electron Limited

Inventor： Hidetami YAEGASHI

IPC: H01L21/768 ,  H01L21/027 ,  H01L21/285

Abstract: In a method according to an exemplary embodiment, a substrate is prepared in a chamber. A patterned resist mask has been formed on a first region of the substrate. A surface of the substrate in a second region is exposed. A film is formed on the substrate in the chamber by sputtering. The film is formed on the substrate in a manner that particles emitted obliquely downward from a target are caused to be incident onto the substrate.

公开(公告)号：US20180374695A1

公开(公告)日：2018-12-27

申请号：US16008392

申请日：2018-06-14

Applicant: Tokyo Electron Limited ,  TOKYO OHKA KOGYO CO., LTD.

Inventor： Kazuki YAMADA ,  Masatoshi YAMATO ,  Hidetami YAEGASHI ,  Yoshitaka KOMURO ,  Takehiro SESHIMO ,  Katsumi OHMORI

IPC: H01L21/027 ,  H01L21/311 ,  H01L21/308

CPC classification number: H01L21/0273 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/0279 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31058 ,  H01L21/31144

Abstract: A pattern forming method includes forming a first organic film by coating an etching target film with a composition including a polymer including a cross-linkable component, infiltrating an inorganic substance into the first organic film, cross-linking the polymer, forming a second organic film on the first organic film, forming a second organic film pattern by patterning the second organic film, forming a first organic film pattern having a pitch reduced to one-half of a pitch of the second organic film pattern by patterning the first organic film by a self-aligned patterning method that uses the second organic film pattern as a core pattern, forming an etching target film pattern having a pitch reduced to one-half of a pitch of the first organic film pattern by patterning the etching target film by a self-aligned patterning method that uses the first organic film pattern as a core pattern.

公开(公告)号：US20160049292A1

公开(公告)日：2016-02-18

申请号：US14818409

申请日：2015-08-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hidetami YAEGASHI ,  Kenichi OYAMA ,  Masatoshi YAMATO ,  Tomohiro ISEKI ,  Toyohisa TSURUDA

IPC: H01L21/027 ,  H01L21/02

CPC classification number: H01L21/0273 ,  G03F7/0045 ,  G03F7/20 ,  G03F7/36 ,  H01L21/0276

Abstract: There is provided a semiconductor device manufacturing method, including: a film forming process in which, by supplying a solution for modifying a surface layer of a resist to a target object having a resist pattern and allowing the solution to infiltrate into the resist, a film having elasticity and having no compatibility with the resist is formed in the surface layer of the resist; and a heating process in which the target object having the film formed thereon is heated.

Abstract translation: 提供了一种半导体器件制造方法，包括：成膜工艺，其中通过向具有抗蚀图案的目标物体提供用于将抗蚀剂的表面层修饰的溶液并且使溶液渗入抗蚀剂中的膜， 在抗蚀剂的表面层中形成具有弹性且与抗蚀剂不相容的物质; 以及加热其中形成有膜的目标物体的加热过程。

公开(公告)号：US20140083972A1

公开(公告)日：2014-03-27

申请号：US14036748

申请日：2013-09-25

Applicant: Tokyo Electron Limited

Inventor： Kenichi OYAMA ,  Hidetami YAEGASHI

IPC: H01B13/00

CPC classification number: H01B13/003 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76816 ,  H01L2924/0002 ,  H01L2924/0001 ,  H01L2924/00

Abstract: Provided is a pattern forming method which includes forming fine lines and spaces in a thin film on a substrate; forming a first pattern which is a reverse pattern of a trench pattern for forming wiring by cutting the lines; and forming a second pattern which will become the trench pattern by reversing the first pattern.

Abstract translation: 提供一种图案形成方法，其包括在基板上形成薄膜中的细线和空间; 形成作为用于通过切割线形成布线的沟槽图案的反向图案的第一图案; 并且通过反转第一图案形成将成为沟槽图案的第二图案。