公开(公告)号：US20170294319A1

公开(公告)日：2017-10-12

申请号：US15480707

申请日：2017-04-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomoaki OGIWARA ,  Hiroyuki TAKAHASHI ,  Takuya ABE ,  Masahiko TOMITA ,  Shinya IWASHITA

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/3105

CPC classification number: H01L21/31116 ,  H01L21/3105 ,  H01L21/67017 ,  H01L21/67069

Abstract: A substrate processing method for removing an oxide film formed on the surface of a substrate includes modifying the oxide film into a reaction product by supplying a halogen element-containing gas and an alkaline gas onto the substrate accommodated in the interior of a processing chamber, and sublimating the reaction product by stopping the supply of the halogen element-containing gas into the processing chamber for removal from the substrate, wherein an internal pressure of the processing chamber in the sublimating is set to be higher than an internal pressure of the processing chamber in the modifying by supplying an inert gas into the processing chamber.

公开(公告)号：US20160027672A1

公开(公告)日：2016-01-28

申请号：US14809035

申请日：2015-07-24

Applicant: Tokyo Electron Limited

Inventor： Yuji ASAKAWA ,  Yohei MIDORIKAWA ,  Satoshi TODA ,  Hiroyuki TAKAHASHI

IPC: H01L21/67 ,  H01L21/687

CPC classification number: H01L21/67126 ,  H01L21/31116 ,  H01L21/6719 ,  H01L21/68742 ,  H01L21/68771 ,  H01L21/68785 ,  H01L21/68792

Abstract: A substrate processing apparatus performs a predetermined process on a substrate by using a processing gas under a vacuum atmosphere. The substrate processing apparatus includes a chamber configured to accommodate the substrate and to be kept in the vacuum atmosphere; a substrate mounting table configured to mount the substrate thereon in the chamber; a gas introduction member configured to introduce a gas including the processing gas in the chamber; a partition wall member provided to be movable up and down in the chamber and configured to form a partition wall that defines a processing space in a region including the substrate above the substrate mounting table; and an elevating mechanism configured to move the partition wall member up and down.

Abstract translation: 基板处理装置在真空气氛下使用处理气体在基板上进行规定的处理。 基板处理装置包括：腔室，被配置为容纳基板并保持在真空气氛中; 基板安装台，其构造成将所述基板安装在所述室中; 气体引入构件，被配置为将包括处理气体的气体引入所述腔室; 分隔壁构件，设置成可在所述室中上下移动并且构造成在所述基板安装台上方包括所述基板的区域中形成限定处理空间的分隔壁; 以及升降机构，其构造成使所述隔壁构件上下移动。

公开(公告)号：US20160247690A1

公开(公告)日：2016-08-25

申请号：US15027740

申请日：2014-09-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki TAKAHASHI ,  Yoshihiko NAKAMURA ,  Shigeki TOZAWA ,  Yusuke NAKAMURA ,  Susumu HOSAKA

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/687 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L21/02164 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/68757

Abstract: An etching device for etching a silicon-containing film formed on a substrate W is includes: a chamber; a substrate mounting mechanism provided in the chamber; a gas supply mechanism configured to supply an etching gas composed of fluorine, hydrogen, and nitrogen into the chamber; and an exhaust mechanism. The substrate mounting mechanism includes: a mounting table; temperature adjusting mechanisms configured to adjust a temperature of a mounting surface of the mounting table to 50 degrees C. or less; and a heating member configured to heat at least a portion of surfaces other than the mounting surface in the mounting table to 60 to 100 degrees C. A resin coating layer is formed at least on the mounting surface of the mounting table.

Abstract translation: 用于蚀刻形成在基板W上的含硅膜的蚀刻装置包括：室; 设置在所述室中的基板安装机构; 气体供给机构，其构造成将由氟，氢，氮构成的蚀刻气体供给到所述室内; 和排气机构。 基板安装机构包括：安装台; 配置为将安装台的安装表面的温度调节到50摄氏度以下的温度调节机构; 以及加热构件，其构造成将安装台中的除安装面以外的表面的至少一部分加热至60〜100℃。树脂涂层至少形成在安装台的安装面上。

公开(公告)号：US20160005621A1

公开(公告)日：2016-01-07

申请号：US14789674

申请日：2015-07-01

Applicant: Tokyo Electron Limited

Inventor： Satoshi TODA ,  Kensaku NARUSHIMA ,  Hiroyuki TAKAHASHI

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L21/31111 ,  H01L21/67069 ,  H01L21/67109

Abstract: A method for etching a silicon oxide film on a target substrate where an etching area is partitioned by pattern layers and stopping the etching before a base layer of the silicon oxide layer is etched is disclosed. The method includes heating the target substrate in a vacuum atmosphere and intermittently supplying, as an etching gas, at least one of a processing gas containing a hydrogen fluoride gas and an ammonia gas in a pre-mixed state and a processing gas containing a compound of nitrogen, hydrogen and fluorine to the target substrate from a gas supply unit multiple times.

Abstract translation: 公开了一种用于蚀刻目标衬底上的氧化硅膜的方法，其中蚀刻区域被图案层划分，并且在蚀刻氧化硅层的基底层之前停止蚀刻。 该方法包括在真空气氛中加热目标基板，并且间歇地将预混合状态的含有氟化氢气体和氨气的处理气体中的至少一种作为蚀刻气体供给，所述处理气体含有 氮气，氢气和氟气从气体供给单元多次送入目标衬底。

公开(公告)号：US20150380268A1

公开(公告)日：2015-12-31

申请号：US14743390

申请日：2015-06-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi TODA ,  Nobuhiro TAKAHASHI ,  Hiroyuki TAKAHASHI

IPC: H01L21/311 ,  G05B19/18 ,  H01L21/02

CPC classification number: H01L21/31116 ,  G05B19/182 ,  H01L21/6708

Abstract: An etching method includes: disposing a substrate to be processed within a chamber, the substrate to be processed having a silicon oxide film formed on a surface thereof and a silicon nitride film formed adjacent to the silicon oxide film; and selectively etching the silicon oxide film with respect to the silicon nitride film by supplying HF gas or HF gas and F2 gas, an alcohol gas or water vapor, and an inert gas into the chamber.

Abstract translation: 蚀刻方法包括：将待处理的基板设置在室内，待处理的基板具有形成在其表面上的氧化硅膜和与氧化硅膜相邻形成的氮化硅膜; 并通过将HF气体或HF气体以及F2气体，醇气体或水蒸气以及惰性气体供给到腔室中，相对于氮化硅膜选择性地蚀刻氧化硅膜。

公开(公告)号：US20150111388A1

公开(公告)日：2015-04-23

申请号：US14517081

申请日：2014-10-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki TAKAHASHI ,  Taechun KWON

IPC: H01L21/311 ,  H01L21/67

CPC classification number: H01L21/31116 ,  H01L21/67017 ,  H01L21/67253

Abstract: A substrate processing method for processing a substrate by supplying a processing gas into a processing chamber and allowing the processing gas to react on the substrate in the processing chamber by using a substrate processing apparatus includes the processing chamber accommodating the substrate, a processing gas supply unit for supplying the processing gas into the processing chamber, and a gas exhaust unit, for exhausting the processing chamber, having a turbo molecular pump. The method controls a processing uniformity by controlling a revolution speed of the turbo molecular pump while maintaining a pressure in the processing chamber to a predetermined level when by-products having a larger molecular mass compared to the processing gas are generated by the reaction of the processing gas.

Abstract translation: 一种基板处理方法，用于通过使用基板处理装置将处理气体供给处理室并使处理气体在处理室中的基板上反应来处理基板，所述基板处理方法包括容纳基板的处理室，处理气体供给单元 用于将处理气体供应到处理室中，以及用于排出具有涡轮分子泵的处理室的排气单元。 该方法通过控制涡轮分子泵的转速来控制加工均匀性，同时将处理室中的压力保持在预定水平，当与处理气体相比具有较大分子量的副产物通过处理 加油站。