公开(公告)号：US09368418B2

公开(公告)日：2016-06-14

申请号：US14464684

申请日：2014-08-20

Applicant: Tokyo Electron Limited

Inventor： Tadahiro Ishizaka ,  Kenji Suzuki

IPC: H01L21/768 ,  H01L23/00 ,  C23C14/16 ,  C23C14/35 ,  H01J37/34 ,  H01J37/32 ,  H01L21/285 ,  H01L23/532

CPC classification number: H01L23/00 ,  C23C14/165 ,  C23C14/358 ,  H01J37/32899 ,  H01J37/34 ,  H01J37/3429 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a Cu wiring structure forming method, a barrier film serving as a Cu diffusion barrier is formed at least on a surface of a recess in a first insulating film formed on a substrate, and the recess is filled with an Al-containing Cu film. A Cu wiring is formed from the Al-containing Cu film, and a cap layer including a Ru film is formed on the Cu wiring. Further, an interface layer containing a Ru—Al alloy is formed at an interface between the Cu wiring and the cap layer by heat generated in forming the cap layer or by a heat treatment performed after forming the cap layer. A second insulating film is formed on the cap layer.

Abstract translation: 在Cu布线结构形成方法中，至少在形成在基板上的第一绝缘膜的凹部的表面上形成用作Cu扩散阻挡层的阻挡膜，并且用含Al的Cu膜填充凹部。 由含Al的Cu膜形成Cu布线，在Cu布线上形成包含Ru膜的覆盖层。 此外，通过在形成盖层时产生的热或通过在形成盖层之后进行的热处理，在Cu布线和盖层之间的界面处形成含有Ru-Al合金的界面层。 在盖层上形成第二绝缘膜。

公开(公告)号：US09064690B2

公开(公告)日：2015-06-23

申请号：US13962327

申请日：2013-08-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tadahiro Ishizaka ,  Atsushi Gomi ,  Kenji Suzuki ,  Tatsuo Hatano ,  Hiroyuki Toshima ,  Yasushi Mizusawa

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/285 ,  H01L23/532 ,  H01L21/312

CPC classification number: H01L21/02104 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/312 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A Cu wiring forming method forms Cu wiring in a recess of a predetermined pattern including a trench formed in an insulating film on a substrate surface. The method includes: forming a barrier film at least on a surface of the recess; forming a Cu film by PVD to fill the recess with the Cu film; forming an additional layer on the Cu film; polishing an entire surface by CMP to form the Cu wiring in the recess; forming a metal cap including a manganese oxide film on an entire surface including the insulating film and the Cu wiring of the substrate after performing the CMP polishing; and forming a dielectric cap on the metal cap.

Abstract translation: Cu布线形成方法在包括形成在基板表面上的绝缘膜中的沟槽的预定图案的凹部中形成Cu布线。 该方法包括：至少在凹部的表面上形成阻挡膜; 通过PVD形成Cu膜以用Cu膜填充凹部; 在Cu膜上形成附加层; 通过CMP抛光整个表面以在凹槽中形成Cu布线; 在进行CMP抛光之后，在包括绝缘膜和基板的Cu布线的整个表面上形成包括氧化锰膜的金属盖; 以及在所述金属盖上形成电介质盖。

公开(公告)号：US10815567B2

公开(公告)日：2020-10-27

申请号：US15520820

申请日：2015-09-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Katsuhito Hirose ,  Kunihiro Tada ,  Kenji Suzuki ,  Takeshi Shinohara

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/34

Abstract: A film deposition device includes a reaction gas supply part which is in communication with a process space defined between a placement part and a ceiling part. An annular gap in a plan view exists between an outer peripheral portion of the placement part and an outer peripheral portion of the ceiling part in circumferential directions of the placement part and the ceiling part. A reaction gas supplied from the reaction gas supply part into the process space via the ceiling part flows outside of the process space via the annular gap. A plurality of gas flow channels, which is used for forming gas-flow walls, is formed in the outer peripheral portion of the ceiling part which provides the annular gap.

公开(公告)号：US10400330B2

公开(公告)日：2019-09-03

申请号：US15473993

申请日：2017-03-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji Suzuki ,  Takanobu Hotta ,  Tomohisa Maruyama ,  Masayuki Nasu ,  Junya Miyahara ,  Koji Maekawa

IPC: H01L21/285 ,  H01L21/768 ,  C23C16/14 ,  C23C16/08 ,  C23C16/455 ,  H01L21/3205 ,  C23C16/452

Abstract: There is provided a tungsten film forming method for forming a tungsten film on a target substrate disposed inside a chamber kept under a depressurized atmosphere and having a base film formed on a surface thereof, using a tungsten chloride gas as a tungsten raw material gas and a reducing gas for reducing the tungsten chloride gas, which includes: performing an SiH4 gas treatment with respect to the target substrate having the base film formed thereon by supplying an SiH4 gas into the chamber; and subsequently, forming the tungsten film by sequentially supplying the tungsten chloride gas and the reducing gas into the chamber while purging an interior of the chamber in the course of sequentially supplying the tungsten chloride gas and the reducing gas.