公开(公告)号：US20140273532A1

公开(公告)日：2014-09-18

申请号：US14195005

申请日：2014-03-03

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ronald Nasman ,  Mirko Vukovic ,  Gerrit J. Leusink ,  Rodney L. Robison ,  Robert D. Clark

IPC: H01L21/263 ,  H01L21/67 ,  H05B6/80 ,  H05B6/72 ,  H05B6/64

Abstract: A processing system is disclosed, having a process chamber that houses a substrate for exposure of a surface of the substrate to a travelling electromagnetic (EM) wave. The processing system also includes an EM wave transmission antenna configured to launch the travelling EM wave into the process chamber for the travelling EM wave to propagate in a direction substantially parallel to the surface of the substrate. The processing system also includes a power coupling system configured to supply EM energy into the EM wave transmission antenna to generate the travelling EM wave at a prescribed output power and in a prescribed EM wave mode during treatment of the substrate. The processing system also includes an EM wave receiving antenna configured to absorb the travelling EM wave after propagation through the process chamber.

Abstract translation: 公开了一种处理系统，其具有处理室，该处理室容纳用于将基板的表面暴露于行进电磁（EM）波的基板。 处理系统还包括一个EM波发射天线，被配置为将行进的EM波发射到处理室中，用于行进的EM波沿基本上平行于基板的表面的方向传播。 处理系统还包括一个功率耦合系统，被配置为在EM波发射天线中提供EM能量，以在处理基板期间以规定的输出功率和规定的EM波模式产生行进EM波。 该处理系统还包括一个EM波接收天线，该天线被配置成在通过处理室传播之后吸收行进的EM波。

公开(公告)号：US20240419080A1

公开(公告)日：2024-12-19

申请号：US18814175

申请日：2024-08-23

Applicant: Tokyo Electron Limited

Inventor： Mirko Vukovic

IPC: G03F7/16 ,  H01J37/20 ,  H01J37/317 ,  H01L21/67

Abstract: A substrate processing system includes a processing chamber, a substrate holder configured to hold and rotate a substrate about an axis perpendicular to a working surface of the substrate; an electron emitter adapted to emit a first electron beam directed at a first surface of a peripheral region of the substrate, the first electron beam having a first beam energy and a first beam current sufficient to vaporize material from the first surface of the peripheral region of the substrate; an airflow system configured to direct a flow of gas across the working surface of the substrate; and an exhaust system configured to collect the gas comprising the material vaporized from the peripheral region.

公开(公告)号：US12007689B2

公开(公告)日：2024-06-11

申请号：US17661901

申请日：2022-05-03

Applicant: Tokyo Electron Limited

Inventor： Mirko Vukovic ,  Steven Gueci

IPC: G03F7/16 ,  H01L21/027 ,  H01L21/033

CPC classification number: G03F7/162 ,  H01L21/0271 ,  H01L21/0337

Abstract: Equipment for coating a wafer is disclosed, where the equipment includes a wafer holder configured to spin the wafer while holding the wafer; a rotary drive configured to spin the wafer holder; a nozzle configured to pour liquid onto a surface to be coated of the wafer; an annular duct disposed circumferentially around the wafer when the wafer is spun by the wafer holder, the duct configured to collect material ejected off an edge of the wafer; and an air knife disposed proximate a backside, the backside being opposite the side to be coated, where the air knife is configured to blow an air curtain through a slot onto an exposed edge region of the backside at a grazing angle of incidence to flow gas radially outward along the backside toward the annular duct.

公开(公告)号：US11883837B2

公开(公告)日：2024-01-30

申请号：US17196189

申请日：2021-03-09

Applicant: Tokyo Electron Limited

Inventor： Mirko Vukovic ,  Daniel Fulford ,  Anton J. Devilliers

IPC: B05B12/08 ,  G01B11/06 ,  H01L21/67 ,  G01N21/55 ,  G01N21/84

CPC classification number: B05B12/084 ,  G01B11/0625 ,  H01L21/6715 ,  H01L21/67253 ,  G01N2021/556 ,  G01N2021/8427

Abstract: Light can be used to monitor coating a liquid on a substrate. By directing the light to a spot on the substrate, when the liquid passes through the spot, some light will be reflected, while some light will be scattered. Monitoring this behavior can indicate whether a substrate has been successfully coated with the liquid, as well as identifying defects. Further, coating times can be monitored to make process adjustments.

公开(公告)号：US11049700B2

公开(公告)日：2021-06-29

申请号：US15719294

申请日：2017-09-28

Applicant: Tokyo Electron Limited

Inventor： Anton J. deVilliers ,  Mirko Vukovic ,  Brandon Byrns

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/687 ,  H05H1/46 ,  H01L21/3065

Abstract: Systems and related methods are disclosed for atmospheric plasma processing of microelectronic workpieces, such as semiconductor wafers. For disclosed embodiments, a radio frequency (RF) generator generates an RF signal that is distributed to one or more plasma sources within a process chamber. The process chamber has an atmospheric pressure between 350 to 4000 Torr. The plasma sources are then scanned across a microelectronic workpiece to apply plasma gasses generated by the plasma generators to the microelectronic workpiece. The plasma sources can be individually scanned and/or combined in arrays for scanning across the microelectronic workpiece. Linear and/or angular movement can be applied to the plasma sources and/or the microelectronic workpiece to provide the scanning operation. Various implementations are disclosed.

公开(公告)号：US10215704B2

公开(公告)日：2019-02-26

申请号：US15448069

申请日：2017-03-02

Applicant: Tokyo Electron Limited

Inventor： Taejoon Han ,  Daniel Morvay ,  Mirko Vukovic

IPC: G01J3/30 ,  G01N21/73 ,  H01J37/32 ,  G06T11/00 ,  G01J3/443 ,  H01L21/3065 ,  H01L21/67 ,  G01N21/68 ,  G01N21/17

Abstract: Described herein are technologies to facilitate computed tomographic techniques to help identifying chemical species during plasma processing of a substrate (e.g., semiconductor wafer) using optical emission spectroscopy (OES). More particularly, the technology described herein uses topographic techniques to spatially resolves emissions and absorptions in at least two-dimension space above the substrate during the plasma processing (e.g., etching) of the substrate. With some implementations utilize optical detectors positioned along multiple axes (e.g., two or more) to receive incident incoming optical spectra from the plasma chamber during the plasma processing (e.g., etching) of the substrate. Because of the multi-axes arrangement, the incident incoming optical spectra form an intersecting grid.