公开(公告)号：US20220246443A1

公开(公告)日：2022-08-04

申请号：US17720292

申请日：2022-04-14

Applicant: Tokyo Electron Limited

Inventor： Ryutaro SUDA ,  Maju TOMURA

IPC: H01L21/3213 ,  H01L21/308 ,  H01L21/02 ,  H01J37/32 ,  C23C16/52 ,  C23C16/40 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/67 ,  H01L21/683

Abstract: A technique improves selectivity in etching of a silicon-containing film over etching of a mask in plasma etching. A substrate processing method includes placing a substrate in a chamber in a plasma processing apparatus. The substrate includes a silicon-containing film and a mask on the silicon-containing film. The substrate processing method further includes generating plasma from a first process gas containing a hydrogen fluoride gas in the chamber. The generating plasma includes etching the silicon-containing film with a chemical species contained in the plasma. A flow rate of the hydrogen fluoride gas is at least 80 vol % of a total flow rate of now-inert components of the first process gas.

公开(公告)号：US20210159089A1

公开(公告)日：2021-05-27

申请号：US17092376

申请日：2020-11-09

Applicant: Tokyo Electron Limited

Inventor： Ryutaro SUDA ,  Maju TOMURA

IPC: H01L21/3213 ,  H01L21/308 ,  H01L21/02 ,  H01L21/3065 ,  C23C16/52 ,  C23C16/40 ,  H01J37/32

Abstract: A technique improves selectivity in etching of a silicon-containing film over etching of a mask in plasma etching. A substrate processing method includes placing a substrate in a chamber in a plasma processing apparatus. The substrate includes a silicon-containing film and a mask on the silicon-containing film. The substrate processing method further includes generating plasma from a first process gas containing a hydrogen fluoride gas in the chamber. The generating plasma includes etching the silicon-containing film with a chemical species contained in the plasma. A flow rate of the hydrogen fluoride gas is at least 80 vol % of a total flow rate of non-inert components of the first process gas.

公开(公告)号：US20240038494A1

公开(公告)日：2024-02-01

申请号：US18023890

申请日：2021-08-27

Applicant: Tokyo Electron Limited

Inventor： Maju TOMURA ,  Ryutaro SUDA ,  Nobuyuki FUKUI

IPC: H01J37/32

CPC classification number: H01J37/32165 ,  H01J37/32935 ,  H01J2237/334

Abstract: An etching method includes: steps a), b), c), and d). Step a) provides a substrate having an underlying layer and an etching target film formed on the underlying layer, on a stage. Step b) generates plasma from a processing gas. Step c) supplies a bias power having a first frequency to the stage to etch the etching target film, thereby forming a recess. Step d) changes a frequency of the bias power to a second frequency different from the first frequency according to an aspect ratio of the recess after step c), to further etch the etching target film. After a generation of the plasma, the etching target film is continuously etched during a time period until the underlying layer is exposed.

公开(公告)号：US20210375633A1

公开(公告)日：2021-12-02

申请号：US16884063

申请日：2020-05-27

Applicant: Tokyo Electron Limited

Inventor： Ryutaro SUDA ,  Kae KUMAGAI ,  Maju TOMURA

IPC: H01L21/311 ,  H01L21/67 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3065

Abstract: A substrate processing apparatus performs a method of etching a substrate that includes etching the substrate to form a first portion of a recess in the substrate, the first portion of the recess including a bottom surface and a sidewall. The method also includes forming an ammonium fluorosilicate (AFS) layer in or on the sidewall, and then etching the bottom surface to form a second portion of the recess. The etching the bottom surface is performed while maintaining protection of the sidewall with the AFS layer.

公开(公告)号：US20210343539A1

公开(公告)日：2021-11-04

申请号：US17244957

申请日：2021-04-30

Applicant: Tokyo Electron Limited

Inventor： Ryutaro SUDA ,  Maju TOMURA

IPC: H01L21/311 ,  H01J37/32 ,  B08B7/00

Abstract: A technique improves selectivity in etching of a silicon-containing film over etching of a mask in plasma etching. A substrate processing method includes providing a substrate in a chamber in a plasma processing apparatus. The substrate includes a silicon-containing film and a mask on the silicon-containing film. The substrate processing method further includes controlling a temperature of a substrate support on which the substrate is placed to 0° C. or lower. The substrate processing method further includes etching the silicon-containing film with plasma generated from a first process gas containing a hydrogen fluoride gas and at least one carbon-containing gas selected from the group consisting of a fluorocarbon gas and a hydrofluorocarbon gas. The etching includes etching the film with a chemical species contained in the plasma. The hydrogen fluoride gas has a highest flow rate among non-inert components of the first process gas.

公开(公告)号：US20210202261A1

公开(公告)日：2021-07-01

申请号：US17131016

申请日：2020-12-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryutaro SUDA ,  Maju TOMURA

IPC: H01L21/311 ,  H01L21/67

Abstract: An etching method includes: providing, on a stage, a substrate including an etching film containing a silicon oxide film, and a mask formed on the etching film; setting a temperature of the stage to be 0° C. or less; and generating plasma from a gas containing fluorine, nitrogen, and carbon, and having a ratio of the number of fluorine to the number of nitrogen (F/N) in a range of 0.5 to 10, thereby etching the silicon oxide film through the mask.

公开(公告)号：US20210159085A1

公开(公告)日：2021-05-27

申请号：US17092380

申请日：2020-11-09

Applicant: Tokyo Electron Limited

Inventor： Ryutaro SUDA ,  Maju TOMURA

IPC: H01L21/311 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/683 ,  H01J37/32

Abstract: A technique improves selectivity in etching of a silicon-containing film over etching of a mask in plasma etching. A substrate processing method includes placing a substrate in a chamber in a plasma processing apparatus. The substrate includes a silicon-containing film and a mask on the silicon-containing film. The substrate processing method further includes generating plasma from a first process gas containing a hydrogen fluoride gas in the chamber. The generating plasma includes etching the silicon-containing film with a chemical species contained in the plasma. A flow rate of the hydrogen fluoride gas is at least 25 vol % of a total flow rate of the non-inert components of the first process gas.

公开(公告)号：US20210143016A1

公开(公告)日：2021-05-13

申请号：US16930483

申请日：2020-07-16

Applicant: Tokyo Electron Limited

Inventor： Takahiro YOKOYAMA ,  Maju TOMURA ,  Yoshihide KIHARA ,  Ryutaro SUDA ,  Takatoshi ORUI

IPC: H01L21/3065 ,  H01L21/02 ,  H01J37/32

Abstract: An etching method of an exemplary embodiment involves providing a substrate in a chamber of a plasma treatment system. The substrate includes a silicon-containing film. The method further involves etching the silicon-containing film by a chemical species in plasma generated from a process gas in the chamber. The process gas contains a halogen gas component and phosphorous gas component.

公开(公告)号：US20200234963A1

公开(公告)日：2020-07-23

申请号：US16744800

申请日：2020-01-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Sho KUMAKURA ,  Ryutaro SUDA

IPC: H01L21/3065 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/67 ,  H01L21/683 ,  H01J37/32

Abstract: An etching method include: etching a silicon-containing film or a metal-containing film formed on a substrate; and heating the substrate by temporarily irradiating the substrate with electromagnetic waves during the etching.

公开(公告)号：US20230268191A1

公开(公告)日：2023-08-24

申请号：US18140694

申请日：2023-04-28

Applicant: Tokyo Electron Limited

Inventor： Maju TOMURA ,  Takatoshi ORUI ,  Kae KUMAGAI ,  Ryutaro SUDA ,  Satoshi OHUCHIDA ,  Yusuke WAKO ,  Yoshihide KIHARA

IPC: H01L21/311 ,  H01L21/033 ,  H01L21/3213 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/32139 ,  H01J37/32449 ,  H01J2237/3341

Abstract: An etching method includes (a) providing a substrate in a chamber in a plasma processing apparatus. The substrate includes a silicon-containing film. The etching method further includes (b) etching the silicon-containing film with a chemical species in plasma generated from a process gas in the chamber. The process gas contains a hydrogen fluoride gas and a phosphorus-containing gas.