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公开(公告)号：US3932880A
公开(公告)日：1976-01-13
申请号：US527427
申请日：1974-11-26
申请人： Aiichiro Nara , Hisao Kondo , Masatoshi Mizushima , Fumi Moriai
发明人： Aiichiro Nara , Hisao Kondo , Masatoshi Mizushima , Fumi Moriai
IPC分类号： H01L21/00 , H01L21/288 , H01L29/872 , H01L29/46 , H01L29/48
CPC分类号： H01L29/872 , H01L21/00 , H01L21/2885
摘要： A nickel-palladium alloy in the form of a layer is contacted by one portion of one main face of a semiconductor substrate to form a Schottky barrier. A gold layer is disposed upon the nickel-palladium layer and an electrically insulating film is disposed on the remaining portion of the one main substrate face to contact and surround both layers. The film has a thickness equal to or greater than the sum of thicknesses of both layers.BACKGROUND OF THE INVENTIONThis invention relates to a semiconductor device including a Schottky barrier and more particularly to means for thermally stabilizing electric characteristics of a Schottky barrier included in a semiconductor device.It is well known that the Schottky barrier is formed in semiconductors adjacent those portions thereof contacted by metallic members and there have been previously propsed many types of semiconductor devices utilizing the electric characteristics of the Schottky barrier. Some of such types of semiconductor devices have been already put to practical use and very frequently included the substrate of semiconductive material having disposed thereon the metallic layer formed of nickel. This nickel layer has been contacted by the substrate to form a Schottky barrier at the interface of the layer and substrate.Semiconductor devices of the type referred to are often used at fairly high temperatures and therefore it is desirable to maintain the electric characteristics of those semiconductor device unchanged even at fairly high temperatures. In other words, it is desirable to provide semiconductor devices of the type referred to be thermally stable in electric characteristics. It has been found that the Schottky barrier formed by contacting the nickel layer with the semiconductor substrate is thermally unstable in electric characteristics so that, when continuously subjectd to heat treatment in the atmosphere at 200.degree. C for one hour, the electric characteristics thereof have been considerably changed.The applicants have studied causes for which semiconductor devices having the Schottky barrier formed by contacting the nickel layer with the semiconductor substrate are changed in electric characteristics after they have been subject to heat treatment in the atmosphere. As a result, it has been estimated that one of the causes is to oxidize the nickel layer due to the heat treatment in the atmosphere. It is believed that this oxidation of the nickel layer will change the composition of the metallic layer and also the electric characteristics of the Schottky barrier. It has been also found that the oxidation of the nickel layer occurs with an additional layer of another metal such as gold covering the nickel layer in order to facilitate the bonding of an external lead to the nickel layer. In that event it has been estimated that oxygen diffused into the nickel layer through the additional layer oxidizes the nickel layer. Also it has been found that, with the additional metallic layer disposed upon the nickel layer, atoms of a metal forming the additional layer, for example, gold are diffused through the nickel layer into the semiconductor substrate due to the particular heat treatment. The diffused metallic atoms have reacted on the semiconductive material of the substrate. It has been estimated that this provides a second cause for which the Schottky barrier changes in electric characteristics. In addition, it has been found that, when thermally treated, the metal forming the additional metallic layer is alloyed with nickel forming the first layer. This alloying causes an increase in electric resistivity of the first layer and the occurence of strains in the crystal lattice of the first layer. Therefore it has been estimated that the alloying provides a third cause for which the Schottky barrier changes in electric characteristics.Although the second and third causes as above described offer no problem with semiconductor devices not including the additional metallic layer as above described, that layer has been, in many cases, provided on semiconductor devices including the Schottky barrier in order to make it possible to bond a lead to the device. Therefore the second and third causes are also important.It is an object of the present invention to provide a new and improved semiconductor device including a Schottky barrier thermally stable in electric characteristics by preventing any changes in the electric characteristics due to the causes as above described.Furthermore semiconductor devices of the type referred to are desirable to be small in a stray capacity relative to the Schottky barrier involved for the purpose of handling high frequency signals.Thus it is another object of the present invention to provide a new and improved semiconductor device including a Schottky barrier exhibiting the thermally stable electric characteristics and low in a stray capacity relative to the Schottky barrier.SUMMARY OF THE INVENTIONAccording to the principles of the present invention there is provided a semiconductor device comprising a substrate of semiconductive material, and a metallic member disposed on the substrate to be contacted by the latter thereby to form a Schottky barrier in the substrate adjacent that portion thereof contacted by the metallic member, the metallic member being composed of a nickel-palladium alloy.In order to decrease a stray capacity relative to the Schottky barrier, the semiconductor device may comprise preferably a substrate of semiconductor material including a pair of first and second main faces opposite to each other, a surface passivation film of electrically insulating material disposed so as to cover that portion of the first main face except for a predetermined portion thereof, a first metallic layer formed of a nickel-palladium alloy and disposed so as to contact the predetermined portion of the first main face thereby to form a Schottky barrier in the substrate adjacent that portion thereof contacted by the first metallic layer, and a second metallic layer disposed to cover the first metallic layer, the sum of the thickness of the first and second metallic layers not exceeding the thickness of the surface passivation film.
摘要翻译： 层的形式的镍 - 钯合金与半导体衬底的一个主面的一部分接触以形成肖特基势垒。 金层设置在镍 - 钯层上，并且电绝缘膜设置在一个主衬底表面的剩余部分上以接触和包围两层。 该膜的厚度等于或大于两层的厚度之和。
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公开(公告)号：US08501977B2
公开(公告)日：2013-08-06
申请号：US13060906
申请日：2009-08-25
申请人： Hisae Arai , Masaji Ohno , Hisao Kondo , Ikuko Arai
发明人： Hisae Arai , Masaji Ohno , Hisao Kondo , Ikuko Arai
CPC分类号： C07C55/07 , C07C61/04 , C07C211/38 , C07C2602/50 , C07F15/0093
摘要： A new platinum complex which has strong antitumor activity and has effect with smaller doses and a pharmaceutical composition containing the same are provided. A spiro[4,4]nonane-1,6-diamineplatinum(II) complex which is represented by a following general formula (A). (In the formula, X and Y are same or different, and X and Y represent halogen atoms respectively, or X and Y cooperatively represent a divalent residue which is described by a formula (Z).) The platinum complex has a strong antitumor activity and is efficacious as a therapeutic agent for malignant tumors.
摘要翻译： 提供了具有强抗肿瘤活性并具有较小剂量效果的新型铂络合物和含有该铂络合物的药物组合物。 由以下通式（A）表示的螺[4,4]壬烷-1,6-二氨基铂（II）络合物。 （式中X和Y相同或不同，X和Y分别表示卤素原子，或X和Y表示二价残基，由式（Z）表示）。铂络合物具有强的抗肿瘤活性 并且作为恶性肿瘤的治疗剂是有效的。
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公开(公告)号：US08203669B2
公开(公告)日：2012-06-19
申请号：US12435003
申请日：2009-05-04
申请人： Hisao Kondo , Katsumi Tsuchida , Hisashi Narita , Shigenori Oota
发明人： Hisao Kondo , Katsumi Tsuchida , Hisashi Narita , Shigenori Oota
IPC分类号： G02F1/1335 , G02F1/1333
CPC分类号： G02F1/133615 , G02B6/0083 , G02B6/0085 , G02B6/009 , G02F2001/133628
摘要： A liquid crystal display device comprising a liquid crystal display panel, a backlight and a heat sink member is disclosed. The backlight comprises a light-guiding plate disposed on one principal surface side of the liquid crystal display panel, LED light sources disposed on an end surface of the light-guiding plate, a mounting board for mounting the LED light sources thereon and a thermally conductive member connected to the mounting board. The heat sink member is connected to the mounting board through the thermally conductive member.
摘要翻译： 公开了一种包括液晶显示面板，背光和散热构件的液晶显示装置。 背光源包括设置在液晶显示面板的一个主表面侧的导光板，设置在导光板的端面上的LED光源，用于在其上安装LED光源的安装板和导热板 连接到安装板的构件。 散热构件通过导热构件连接到安装板。
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公开(公告)号：US06703373B1
公开(公告)日：2004-03-09
申请号：US10070825
申请日：2002-03-11
IPC分类号： A01N4304
摘要： A compound represented by the formula or a pharmaceutically acceptable salt thereof wherein R represents an unsubstituted pyridyl, furyl or thienyl group, or a pyridyl, furyl or thienyl group each of which has one or more substituents selected from the group consisting of a hydroxyl group, a lower alkoxy group, a hydroxy lower alkyl group and a hydroxy lower alkenyl group except that when the pyridyl, furyl or thienyl group has a lower alkoxy group as a substituent, each of which simultaneously has another substituent selected from the group consisting of a hydroxyl group, a lower alkoxy group, a hydroxy lower alkyl group and a hydroxy lower alkenyl group, m represents an integer of 1 to 3, and G represents a &bgr;-D-glucopyranosyl group, and the positions of substitution of the hydroxyl groups on the indolopyrrolocarbazole ring are the 1- and 11-positions, or the 2- and 10-positions, and an antitumore agent containing it as an effective ingredient. The compounds have a better antitumor action than known compounds having a similar structure.
摘要翻译： 由下式表示的化合物或其药学上可接受的盐，其中R表示未取代的吡啶基，呋喃基或噻吩基，或吡啶基，呋喃基或噻吩基，其各自具有一个或多个选自羟基， 低级烷氧基，羟基低级烷基和羟基低级烯基，不同之处在于当吡啶基，呋喃基或噻吩基具有低级烷氧基作为取代基时，其各自同时具有选自羟基的另一取代基 ，低级烷氧基，羟基低级烷基和羟基低级烯基，m表示1〜3的整数，G表示β-D-吡喃葡萄糖基，吲哚并吡咯并唑的羟基取代位置 环是1-和11位，或2-和10-位，以及含有它作为有效成分的抗肿瘤剂。化合物具有更好的抗肿瘤 比已知具有相似结构的化合物。
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公开(公告)号：US06268512B1
公开(公告)日：2001-07-31
申请号：US09600019
申请日：2000-07-11
申请人： Hisao Kondo , Tetsuro Higashikawa
发明人： Hisao Kondo , Tetsuro Higashikawa
IPC分类号： C07D20712
CPC分类号： C07D209/34
摘要： The present invention is a process for producing 3-methyl-2-oxoindoline as defined by the following chemical formula (2), including heating of propionylphenylhydrazide as defined by the following chemical formula (1) in the presence of at least one kind of basic calcium compound, characterized in that an organic solvent withstanding at least at a temperature of 180° C. in the presence of the basic calcium compound is employed by at least an amount of equal weight to that of the propionylphenylhydrazide. With the construction mentioned above, even when the amount of calcium oxide is reduced down to as little as 15% of a conventionally used amount, at least 75% of a corresponding yield attained conventionally has been achieved. That is, not only control of the reaction and easy after treatment but also a high yield has been achieved;
摘要翻译： 本发明是由以下化学式（2）定义的3-甲基-2-氧代二氢吲哚的制造方法，其中包括如下化学式（1）所定义的丙酰基苯基酰肼在至少一种碱性 钙化合物，其特征在于，在碱性钙化合物的存在下，至少在180℃的温度下耐受的有机溶剂的使用量至少与丙酰基苯肼的重量相同。 通过上述结构，即使氧化钙的量减少到常规使用量的少至15％，也达到了通常达到相应产率的至少75％。 也就是说，不仅控制反应，而且处理容易，而且成品率高;
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公开(公告)号：US5922860A
公开(公告)日：1999-07-13
申请号：US3602
申请日：1998-01-07
IPC分类号： C07C243/16 , C07D403/04 , C07D403/14 , C07D487/14 , C07H19/04 , C07H19/044 , C07H17/02 , C07H19/00 , C07H19/22
CPC分类号： C07D403/04 , C07C243/16 , C07D403/14 , C07D487/14 , C07H19/04 , C07H19/044
摘要： This invention relates to compounds of the general formula ##STR1## or pharmaceutically salts thereof, wherein R.sup.1 and R.sup.2 each represent an OH group, R.sup.1 is located at the 1- or 2-position, R.sup.2 is located at the 10- or 11-position, R.sup.2 is located at the 11-position when R.sup.1 is located at the 1-position, and R.sup.2 is located at the 10-position when R.sup.1 is located at the 2-position. The compounds of the present invention have an excellent antitumor effect and are hence useful as antitumor agents in the field of medicine.
摘要翻译： 本发明涉及通式的化合物或其药学上可接受的盐，其中R 1和R 2各自表示OH基，R 1位于1或2位，R 2位于10或11位，R 2为 当R1位于1位时位于11位，当R1位于2位时R2位于10位。 本发明的化合物具有优异的抗肿瘤效果，因此可用作医药领域的抗肿瘤剂。
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公开(公告)号：US5668271A
公开(公告)日：1997-09-16
申请号：US474659
申请日：1995-06-07
IPC分类号： C07H19/044 , C07H19/23 , C07D273/00
CPC分类号： C07H19/044
摘要： Indolopyrrocarbazole derivatives represented by formula (I) and the pharmaceutically acceptable salts thereof have excellent antitumor activity as evidenced by their in vitro proliferation inhibiting activity against mouse leukemia cell, human gastric cancer cell, human lung cancer cell and human colon cancer cell, ##STR1## wherein R.sup.1 and R.sup.2 independently represent, for example, a hydrogen atom or various hydrocarbon groups which may be substituted or heterocyclic groups which may also be substituted; or a group --Y--R.sup.3 where Y represents a carbonyl group, thiocarbonyl group or sulfonyl group and R.sup.3 represents a hydrogen atom or one of various aliphatic, cycloaliphatic, aryl, nitrogen-containing (e.g. amino, hydrazino, etc) or heterocyclic groups, which groups may be substituted by various substituents; or R.sup.1 and R.sup.2 may combine to represent a lower alkylidene group which may be substituted; or R.sup.1 and R.sup.2, together with the N-atom to which they are bonded form a heterocyclic group which may be substituted;G represents a pentose or hexose group; and X.sup.1 and X.sup.2, independently, represent, for example, hydrogen, halogen, amino, hydroxyl, alkoxy, aryloxy, carboxyl, alkoxycarbonyl or alkyl. These compounds have improved water solubility as compared to rebeccamycin.
摘要翻译： 由式（I）表示的吲哚并吡咔唑衍生物及其药学上可接受的盐具有优异的抗肿瘤活性，如通过其对小鼠白血病细胞，人胃癌细胞，人肺癌细胞和人结肠癌细胞的体外增殖抑制活性所证明的。 其中R1和R2独立地表示例如氢原子或可以是取代的各种烃基或也可以被取代的杂环基; 或其中Y表示羰基，硫代羰基或磺酰基且R 3表示氢原子或各种脂族，脂环族，芳基，含氮（例如氨基，肼基等）或杂环基之一的基团-Y-R3， 哪些基团可以被各种取代基取代; 或者R 1和R 2可以组合以表示可被取代的低级亚烷基; 或R 1和R 2与它们所键合的N-原子一起形成可被取代的杂环基; G表示戊糖或己糖基团; X 1和X 2独立地表示例如氢，卤素，氨基，羟基，烷氧基，芳氧基，羧基，烷氧基羰基或烷基。 与雷贝卡霉素相比，这些化合物具有改善的水溶性。
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公开(公告)号：US4223327A
公开(公告)日：1980-09-16
申请号：US909108
申请日：1978-05-24
申请人： Aiichiro Nara , Hisao Kondo , Takeji Fujiwara , Hideaki Ikegawa
发明人： Aiichiro Nara , Hisao Kondo , Takeji Fujiwara , Hideaki Ikegawa
IPC分类号： H01L21/288 , H01L29/41 , H01L29/417 , H01L29/47 , H01L29/872 , H01L29/48
CPC分类号： H01L21/2885 , H01L29/41 , H01L29/417 , H01L29/47 , H01L29/475 , Y10S148/139
摘要： A Schottky barrier semiconductor device comprising a semiconductor substrate having a hole in part of one of its main surfaces, a surface protecting film formed on the main surface and having a flange-like part extending over the edge of the hole, and a barrier metal formed on the entire wall of the hole including areas underneath the flange-like portion. The barrier metal film thus formed prevents concentration of an electric field at the edge of the interface between the barrier metal and the semiconductor substrate, thereby improving the reverse breakdown characteristics.
摘要翻译： 一种肖特基势垒半导体器件，包括在其主表面中的一部分上具有孔的半导体衬底，形成在主表面上的表面保护膜，并且具有在孔的边缘上延伸的凸缘状部分和形成的阻挡金属 在孔的整个壁上，包括在凸缘状部分下面的区域。 这样形成的阻挡金属膜防止了在阻挡金属和半导体衬底之间的界面的边缘处的电场的集中，从而提高了反向击穿特性。
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19.发明申请公开(公告)号：US20140221475A1
公开(公告)日：2014-08-07
申请号：US14232719
申请日：2012-07-09
申请人： Hisae Arai , Hisao Kondo , Norio Masuda
发明人： Hisae Arai , Hisao Kondo , Norio Masuda
IPC分类号： C07F15/00
CPC分类号： C07F15/0093 , A61K31/282 , C07F15/0086
摘要： New platinum(IV) complexes which has a strong antitumor activity and has a feature that a side effect is relatively reduced is provided. The new complex is platinum(IV) complexes with cis,cis-spiro[4,4]nonane-1,6-diamine ligand and is platinum(IV) complexes with optically active cis,cis-spiro[4,4]nonane-1,6-diamine ligand. Especially, the new complex is dichloromalonato((1S,5S,6S)-spiro[4.4]nonane-1,6-diamine)platinum(IV).
摘要翻译： 提供了具有强抗肿瘤活性并具有副作用相对降低的特征的新的铂（IV）络合物。 新的络合物是具有顺式，顺式 - 螺[4,4]壬烷-1,6-二胺配体的铂（IV）络合物，并且是具有光学活性顺式，顺式 - 螺[4,4]壬烷-1,4-二胺配体的铂（IV） 1,6-二胺配体。 特别地，新配合物是二氯马洛酮（（1S，5S，6S） - 螺[4.4]壬烷-1,6-二胺）铂（IV）。
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公开(公告)号：US20120012947A1
公开(公告)日：2012-01-19
申请号：US13078436
申请日：2011-04-01
IPC分类号： H01L29/78
CPC分类号： H01L29/4983 , H01L29/1095 , H01L29/42372 , H01L29/4238 , H01L29/7811
摘要： A semiconductor device includes a gate pad, a gate wiring conductor connected to the gate pad, and a gate electrode formed under the gate pad and the gate wiring conductor. Portions of the gate electrode closer to the gate pad have a higher resistance per unit area than portions of the gate electrode farther away from the gate pad.
摘要翻译： 半导体器件包括栅极焊盘，连接到栅极焊盘的栅极布线导体和形成在栅极焊盘和栅极布线导体下面的栅电极。 靠近栅极焊盘的栅电极的部分具有比栅极电极远离栅极焊盘的部分更高的每单位面积的电阻。
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