公开(公告)号：US20050164420A1

公开(公告)日：2005-07-28

申请号：US11076918

申请日：2005-03-11

申请人： Toshiaki Kuniyasu ,  Fusao Yamanaka ,  Toshiaki Fukunaga

发明人： Toshiaki Kuniyasu ,  Fusao Yamanaka ,  Toshiaki Fukunaga

IPC分类号： H01S5/042 ,  H01S5/16 ,  H01S5/20 ,  H01S5/22 ,  H01S5/343 ,  H01L21/00

CPC分类号： B82Y20/00 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/2081 ,  H01S5/22 ,  H01S5/2203 ,  H01S5/3434

摘要： An n-GaAs buffer layer, an n-AlGaAs lower cladding layer, an n- or i-InGaP lower optical waveguide layer, an InGaAsP quantum cell active layer, a p- or i-InGaP upper optical waveguide layer, a p-AlGaAs first upper cladding layer, a p- or i-InGaP etch-stopping layer, a p-AlGaAs second upper cladding layer, and a p-GaAs contact layer, are grown upon an n-GaAs substrate. A photoresist is coated on the wafer, and two grooves are formed by etching. Then, the photoresist on the perimeter of the device is removed and the contact layer is selectively etched. Next, the photoresist is lifted off. A SiO2 film is formed on the entire surface. After a window is formed in a portion of the SiO2 film corresponding to a ridge portion, a p-electrode is formed on a region of the SiO2 film other than the device perimeter.

摘要翻译： n-GaAs缓冲层，n-AlGaAs下包层，n或i-InGaP下光波导层，InGaAsP量子单元有源层，p或i-InGaP上光波导层，p-AlGaAs 在n-GaAs衬底上生长第一上覆层，p或i-InGaP蚀刻停止层，p-AlGaAs第二上覆层和p-GaAs接触层。 在晶片上涂覆光致抗蚀剂，通过蚀刻形成两个沟槽。 然后，去除设备周边上的光致抗蚀剂并选择性地蚀刻接触层。 接下来，剥离光致抗蚀剂。 在整个表面上形成SiO 2膜。 在对应于脊部的SiO 2膜的一部分形成窗口之后，在除SiO 2膜以外的SiO 2膜的区域上形成p电极 设备周长。

公开(公告)号：US06888866B2

公开(公告)日：2005-05-03

申请号：US09973814

申请日：2001-10-11

申请人： Toshiaki Kuniyasu ,  Fusao Yamanaka ,  Toshiaki Fukunaga

发明人： Toshiaki Kuniyasu ,  Fusao Yamanaka ,  Toshiaki Fukunaga

IPC分类号： H01S5/042 ,  H01S5/16 ,  H01S5/20 ,  H01S5/22 ,  H01S5/343 ,  H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/2081 ,  H01S5/22 ,  H01S5/2203 ,  H01S5/3434

摘要： An n-GaAs buffer layer, an n-AlGaAs lower cladding layer, an n- or i-InGaP lower optical waveguide layer, an InGaAsP quantum cell active layer, a p- or i-InGaP upper optical waveguide layer, a p-AlGaAs first upper cladding layer, a p- or i-InGaP etch-stopping layer, a p-AlGaAs second upper cladding layer, and a p-GaAs contact layer, are grown upon an n-GaAs substrate. A photoresist is coated on the wafer, and two grooves are formed by etching. Then, the photoresist on the perimeter of the device is removed and the contact layer is selectively etched. Next, the photoresist is lifted off. A SiO2 film is formed on the entire surface. After a window is formed in a portion of the SiO2 film corresponding to a ridge portion, a p-electrode is formed on a region of the SiO2 film other than the device perimeter.

公开(公告)号：US06778573B2

公开(公告)日：2004-08-17

申请号：US09801695

申请日：2001-03-09

申请人： Toshiro Hayakawa ,  Toshiaki Fukunaga

发明人： Toshiro Hayakawa ,  Toshiaki Fukunaga

IPC分类号： H01S500

CPC分类号： H01S5/2231 ,  H01S5/0655 ,  H01S5/20 ,  H01S5/2004

摘要： In a semiconductor laser device including having an index-guided structure and oscillating in a fundamental transverse mode, a lower cladding layer, a lower optical waveguide layer, a quantum well layer, an upper optical waveguide layer, and a current confinement structure are formed in this order. The thickness of the upper optical waveguide layer is smaller than the thickness of the lower optical waveguide layer. In addition, the sum of the thicknesses of the upper and lower optical waveguide layers may be 0.5 micrometers or greater. Further, the distance between the bottom of the current confinement structure and the upper surface of the quantum well layer may be smaller than 0.25 micrometers.

摘要翻译： 在具有折射引导结构并以基本横模振荡的半导体激光装置中，形成下包层，下光波导层，量子阱层，上光波导层和电流限制结构 这个命令。 上光波导层的厚度小于下光波导层的厚度。 此外，上下光波导层的厚度之和可以为0.5微米以上。 此外，电流限制结构的底部与量子阱层的上表面之间的距离可以小于0.25微米。

公开(公告)号：US06744797B2

公开(公告)日：2004-06-01

申请号：US10114059

申请日：2002-04-03

申请人： Toshiaki Kuniyasu ,  Toshiaki Fukunaga

发明人： Toshiaki Kuniyasu ,  Toshiaki Fukunaga

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/16 ,  H01S5/3413 ,  H01S5/34386

摘要： A semiconductor laser device improves reliability during high-power oscillation. An n-type GaAs buffer layer, an n-type In0.48Ga0.52P lower cladding layer, an n-type or i-type Inx1Ga1−x1As1−y1Py1 optical waveguide layer, an i-type GaAs1−y2Py2 tensile-strain barrier layer, an Inx3Ga1−3As1−y3Py3 compressive-strain quantum-well active layer, an i-type GaAs1−y2Py2 tensile-strain barrier layer, a p-type or i-type Inx1Ga1−x1As1−y1Py1 upper optical waveguide layer, a p-type In0.48Ga0.52P first upper cladding layer, a GaAs etching stop layer, a p-type In0.48Ga0.52P second upper cladding layer, and a p-type GaAs contact layer are grown on a plane of an n-type GaAs substrate. Two ridge trenches are formed on the resultant structure, and current non-injection regions are formed by removing the p-type GaAs contact layer in portions extending inwardly by 30 &mgr;m from cleavage positions of edge facets of the resonator on a top face of a ridge portion between the ridge trenches.

摘要翻译： 半导体激光器件在高功率振荡期间提高了可靠性。 n型GaAs缓冲层，n型In0.48Ga0.52P下包层，n型或i型Inx1Ga1-x1As1-y1Py1光波导层，i型GaAs1-y2Py2拉伸应变阻挡层 Inx3Ga1-3As1-y3Py3压缩应变量子阱有源层，i型GaAs1-y2Py2拉伸应变势垒层，p型或i型Inx1Ga1-x1As1-y1Py1上部光波导层， 在n型GaAs的平面上生长In0.48Ga0.52P的第一上包层，GaAs蚀刻停止层，p型In0.48Ga0.52P第二上覆层和p型GaAs接触层 基质。 在所得结构上形成两个脊沟槽，并且通过从脊的顶面上的谐振器的边缘切口的切割位置向内延伸30微米的部分去除p型GaAs接触层，形成电流的非注入区域 脊沟槽之间的部分。

公开(公告)号：US06668002B2

公开(公告)日：2003-12-23

申请号：US10106040

申请日：2002-03-27

申请人： Toshiaki Fukunaga

发明人： Toshiaki Fukunaga

IPC分类号： H01S500

CPC分类号： H01S5/20 ,  H01S5/1032 ,  H01S5/209 ,  H01S5/4031

摘要： In a semiconductor laser device: an n-type In0.49Ga0.51P cladding layer, an undoped or n-type Inx1Ga1-x1As1-y1Py1 optical waveguide layer, an Inx3Ga1-x3As1-y3Py3 compressive-strain quantum-well active layer, an undoped or p-type Inx1Ga1-x1As1-y1Py1 optical waveguide layer, a p-type In0.49Ga0.51P cladding layer, and a p-type GaAs etching stop layer are formed on an n-type GaAs substrate; a p-type Inx8Ga1-x8P etching stop layer and an n-type GaAs current confinement layer are formed corresponding to high-refractive-index regions which realize an ARROW structure; a p-type Inx9Ga1-x9P etching stop layer is formed over the n-type GaAs current confinement layer and exposed areas of the first etching stop layer; a p-type GaAs etching stop layer and an n-type In0.49Ga0.51P current confinement layer are formed in regions other than a current injection region; and a p-type In0.49Ga0.51P cladding layer and a p-type GaAs contact layer are formed over the entire upper surface.

公开(公告)号：US06625190B1

公开(公告)日：2003-09-23

申请号：US09648807

申请日：2000-08-28

申请人： Toshiro Hayakawa ,  Toshiaki Fukunaga ,  Mitsugu Wada

发明人： Toshiro Hayakawa ,  Toshiaki Fukunaga ,  Mitsugu Wada

IPC分类号： H01S319

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/204 ,  H01S5/34353 ,  H01S5/3436 ,  H01S5/34386

摘要： In a semiconductor laser device including an active region which is made of an aluminum-free material and a plurality of cladding layers made of at least one AlGaAs or AlGaInP material, the active region includes a quantum well layer and at least one optical waveguide layer; a portion of the at least one optical waveguide layer located on one side of the quantum well layer has a thickness of 0.25 &mgr;m or more; and the at least one optical waveguide layer, other than a portion of the at least one optical waveguide layer being located near the quantum well layer and having a thickness of at least 10 nm, is doped with impurity of 1017 cm−3 or more.

摘要翻译： 在包括由无铝材料制成的有源区和由至少一种AlGaAs或AlGaInP材料制成的多个覆层的半导体激光器件中，有源区包括量子阱层和至少一个光波导层; 位于量子阱层的一侧的至少一个光波导层的一部分具有0.25μm以上的厚度; 并且所述至少一个光波导层，除了所述至少一个光波导层的位于所述量子阱层附近并且具有至少10nm的厚度的部分之外，掺杂有10 17 cm -1的杂质， 3>以上。

公开(公告)号：US06621845B2

公开(公告)日：2003-09-16

申请号：US09981258

申请日：2001-10-18

申请人： Toshiaki Fukunaga

发明人： Toshiaki Fukunaga

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/2202 ,  H01S5/2209 ,  H01S5/3403 ,  H01S5/34373

摘要： In a semiconductor laser device having an InGaAsP compressive strain quantum well active layer, an InGaAsP first upper optical waveguide layer formed on the active layer, and a current confinement layer which is formed above the first upper optical waveguide layer and includes a stripe groove. An AlGaAs second upper optical waveguide layer having an approximately identical refractive index to that of the first upper optical waveguide layer covers the current confinement layer and the stripe groove. The product of the strain and the thickness of the active layer does not exceed 0.25 nm. All the layers other than the compressive strain quantum well active layer lattice-match with GaAs. An AlGaAs or InGaAsP upper cladding layer formed above the second upper optical waveguide layer has an approximately identical refractive index to that of a lower cladding layer formed under the active layer.

公开(公告)号：US06560261B2

公开(公告)日：2003-05-06

申请号：US10012042

申请日：2001-12-11

申请人： Toshiaki Fukunaga ,  Tsuyoshi Ohgoh

发明人： Toshiaki Fukunaga ,  Tsuyoshi Ohgoh

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/2081 ,  H01S5/2231 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/3434 ,  H01S5/34373

摘要： In a semiconductor-laser device: a compressive-strain quantum-well active layer is made of Inx3Ga1−x3As1−y3Py3 (0

摘要翻译： 在半导体激光器件中：压应变量子阱有源层由In x 3 Ga 1-x 3 As 1-y 3 P y 3（0

公开(公告)号：US06344367B1

公开(公告)日：2002-02-05

申请号：US09612906

申请日：2000-07-10

申请人： Masayuki Naya ,  Toshiaki Fukunaga

发明人： Masayuki Naya ,  Toshiaki Fukunaga

IPC分类号： H01L2100

CPC分类号： G03F7/001 ,  G03F7/094

摘要： A first resist layer (21) and a second resist layer (22) are formed on a base material (11) in the recited order, the first resist layer (21) being removable by etching and the second resist layer (22) being a photosensitive resist layer in which either exposed or unexposed regions become soluble in a developing solvent upon emission of light. Near-field light is then emitted to the second resist layer (22) by means (24) for emitting near-field light (27) according to a diffraction grating pattern upon reception of the light. Next, the diffraction grating pattern is formed in the second resist layer (22) by developing the second resist layer (22). The first resist layer (21) is etched with the pattern in the second resist layer (22) as an etching mask, and a diffraction grating pattern consisting of the first and second resist layers (21, 22) is formed. Finally, a diffraction grating is formed in the base material (11) by etching the base material (11) with the pattern in the first and second resist layers (21, 22) as an etching mask.

摘要翻译： 第一抗蚀剂层（21）和第二抗蚀剂层（22）按顺序形成在基材（11）上，第一抗蚀剂层（21）可通过蚀刻去除，第二抗蚀剂层（22）为 光敏抗蚀剂层，其中暴露或未曝光的区域在发光时变得可溶于显影溶剂。 然后，通过接收光的衍射光栅图案，通过用于发射近场光（27）的装置（24）将近场光发射到第二抗蚀剂层（22）。 接着，通过显影第二抗蚀剂层（22），在第二抗蚀剂层（22）中形成衍射光栅图案。 在第二抗蚀剂层（22）中用第一抗蚀剂层（21）蚀刻第一抗蚀剂层（21）作为蚀刻掩模，并且形成由第一和第二抗蚀剂层（21,22）组成的衍射光栅图案。 最后，通过用第一和第二抗蚀剂层（21,22）中的图案作为蚀刻掩模蚀刻基底材料（11），在基底材料（11）中形成衍射光栅。

公开(公告)号：US6028874A

公开(公告)日：2000-02-22

申请号：US877958

申请日：1997-06-17

申请人： Mitsugu Wada ,  Toshiaki Fukunaga

发明人： Mitsugu Wada ,  Toshiaki Fukunaga

IPC分类号： H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/34313 ,  H01S2304/04 ,  H01S5/3406 ,  H01S5/3407

摘要： A III-V group semiconductor laser includes a first clad layer, a first optical waveguide layer, a first barrier layer, an active layer, a second barrier layer, a second optical waveguide layer and a second clad layer formed in this order on a GaAs substrate which is a III-V group compound semiconductor. Each of the first and second clad layers and the first and second optical waveguide layers is of a composition which matches with the GaAs substrate in lattice. The active layer is of a composition which induces compressive strain on the GaAs substrate. Each of the first and second barrier layers is of a composition which induces tensile strain on the GaAs substrate, thereby compensating for the compressive strain induced in the active layer. The ratio of V group elements contained in the first optical waveguide layer is the same as that in the first barrier layer, and the ratio of V group elements contained in the second optical waveguide layer is the same as that in the second barrier layer.

摘要翻译： III-V族半导体激光器包括在GaAs上依次形成的第一覆盖层，第一光波导层，第一势垒层，有源层，第二势垒层，第二光波导层和第二覆盖层 作为III-V族化合物半导体的基板。 第一和第二包覆层以及第一和第二光波导层中的每一个具有与GaAs衬底相同的组成。 有源层是在GaAs衬底上引起压应变的组成。 第一和第二阻挡层中的每一个都是在GaAs衬底上引起拉伸应变的组成，从而补偿在有源层中感应的压缩应变。 包含在第一光波导层中的V族元素的比例与第一阻挡层中的V族元素的比率相同，并且第二光波导层中包含的V族元素的比例与第二阻挡层中的相同。