公开(公告)号：US20050164420A1

公开(公告)日：2005-07-28

申请号：US11076918

申请日：2005-03-11

申请人： Toshiaki Kuniyasu ,  Fusao Yamanaka ,  Toshiaki Fukunaga

发明人： Toshiaki Kuniyasu ,  Fusao Yamanaka ,  Toshiaki Fukunaga

IPC分类号： H01S5/042 ,  H01S5/16 ,  H01S5/20 ,  H01S5/22 ,  H01S5/343 ,  H01L21/00

CPC分类号： B82Y20/00 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/2081 ,  H01S5/22 ,  H01S5/2203 ,  H01S5/3434

摘要： An n-GaAs buffer layer, an n-AlGaAs lower cladding layer, an n- or i-InGaP lower optical waveguide layer, an InGaAsP quantum cell active layer, a p- or i-InGaP upper optical waveguide layer, a p-AlGaAs first upper cladding layer, a p- or i-InGaP etch-stopping layer, a p-AlGaAs second upper cladding layer, and a p-GaAs contact layer, are grown upon an n-GaAs substrate. A photoresist is coated on the wafer, and two grooves are formed by etching. Then, the photoresist on the perimeter of the device is removed and the contact layer is selectively etched. Next, the photoresist is lifted off. A SiO2 film is formed on the entire surface. After a window is formed in a portion of the SiO2 film corresponding to a ridge portion, a p-electrode is formed on a region of the SiO2 film other than the device perimeter.

摘要翻译： n-GaAs缓冲层，n-AlGaAs下包层，n或i-InGaP下光波导层，InGaAsP量子单元有源层，p或i-InGaP上光波导层，p-AlGaAs 在n-GaAs衬底上生长第一上覆层，p或i-InGaP蚀刻停止层，p-AlGaAs第二上覆层和p-GaAs接触层。 在晶片上涂覆光致抗蚀剂，通过蚀刻形成两个沟槽。 然后，去除设备周边上的光致抗蚀剂并选择性地蚀刻接触层。 接下来，剥离光致抗蚀剂。 在整个表面上形成SiO 2膜。 在对应于脊部的SiO 2膜的一部分形成窗口之后，在除SiO 2膜以外的SiO 2膜的区域上形成p电极 设备周长。

公开(公告)号：US06888866B2

公开(公告)日：2005-05-03

申请号：US09973814

申请日：2001-10-11

申请人： Toshiaki Kuniyasu ,  Fusao Yamanaka ,  Toshiaki Fukunaga

发明人： Toshiaki Kuniyasu ,  Fusao Yamanaka ,  Toshiaki Fukunaga

IPC分类号： H01S5/042 ,  H01S5/16 ,  H01S5/20 ,  H01S5/22 ,  H01S5/343 ,  H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/2081 ,  H01S5/22 ,  H01S5/2203 ,  H01S5/3434

摘要： An n-GaAs buffer layer, an n-AlGaAs lower cladding layer, an n- or i-InGaP lower optical waveguide layer, an InGaAsP quantum cell active layer, a p- or i-InGaP upper optical waveguide layer, a p-AlGaAs first upper cladding layer, a p- or i-InGaP etch-stopping layer, a p-AlGaAs second upper cladding layer, and a p-GaAs contact layer, are grown upon an n-GaAs substrate. A photoresist is coated on the wafer, and two grooves are formed by etching. Then, the photoresist on the perimeter of the device is removed and the contact layer is selectively etched. Next, the photoresist is lifted off. A SiO2 film is formed on the entire surface. After a window is formed in a portion of the SiO2 film corresponding to a ridge portion, a p-electrode is formed on a region of the SiO2 film other than the device perimeter.

公开(公告)号：US06744797B2

公开(公告)日：2004-06-01

申请号：US10114059

申请日：2002-04-03

申请人： Toshiaki Kuniyasu ,  Toshiaki Fukunaga

发明人： Toshiaki Kuniyasu ,  Toshiaki Fukunaga

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/16 ,  H01S5/3413 ,  H01S5/34386

摘要： A semiconductor laser device improves reliability during high-power oscillation. An n-type GaAs buffer layer, an n-type In0.48Ga0.52P lower cladding layer, an n-type or i-type Inx1Ga1−x1As1−y1Py1 optical waveguide layer, an i-type GaAs1−y2Py2 tensile-strain barrier layer, an Inx3Ga1−3As1−y3Py3 compressive-strain quantum-well active layer, an i-type GaAs1−y2Py2 tensile-strain barrier layer, a p-type or i-type Inx1Ga1−x1As1−y1Py1 upper optical waveguide layer, a p-type In0.48Ga0.52P first upper cladding layer, a GaAs etching stop layer, a p-type In0.48Ga0.52P second upper cladding layer, and a p-type GaAs contact layer are grown on a plane of an n-type GaAs substrate. Two ridge trenches are formed on the resultant structure, and current non-injection regions are formed by removing the p-type GaAs contact layer in portions extending inwardly by 30 &mgr;m from cleavage positions of edge facets of the resonator on a top face of a ridge portion between the ridge trenches.

摘要翻译： 半导体激光器件在高功率振荡期间提高了可靠性。 n型GaAs缓冲层，n型In0.48Ga0.52P下包层，n型或i型Inx1Ga1-x1As1-y1Py1光波导层，i型GaAs1-y2Py2拉伸应变阻挡层 Inx3Ga1-3As1-y3Py3压缩应变量子阱有源层，i型GaAs1-y2Py2拉伸应变势垒层，p型或i型Inx1Ga1-x1As1-y1Py1上部光波导层， 在n型GaAs的平面上生长In0.48Ga0.52P的第一上包层，GaAs蚀刻停止层，p型In0.48Ga0.52P第二上覆层和p型GaAs接触层 基质。 在所得结构上形成两个脊沟槽，并且通过从脊的顶面上的谐振器的边缘切口的切割位置向内延伸30微米的部分去除p型GaAs接触层，形成电流的非注入区域 脊沟槽之间的部分。

公开(公告)号：US06709513B2

公开(公告)日：2004-03-23

申请号：US10188038

申请日：2002-07-03

申请人： Toshiaki Fukunaga ,  Toshiaki Kuniyasu ,  Mitsugu Wada ,  Yoshinori Hotta

发明人： Toshiaki Fukunaga ,  Toshiaki Kuniyasu ,  Mitsugu Wada ,  Yoshinori Hotta

IPC分类号： C30B2504

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265

摘要： In a process for producing a substrate for use in a semiconductor element: a porous anodic alumina film having a great number of minute pores is formed on a surface of a base substrate; the surface of the base substrate is etched by using the porous anodic alumina film as a mask so as to form a great number of pits on the surface of the base substrate; the porous anodic alumina film is removed; and a GaN layer is formed on the surface of the base substrate by crystal growth.

摘要翻译： 在半导体元件用基板的制造方法中，在基板的表面上形成具有大量微小孔的多孔阳极氧化铝膜， 通过使用多孔阳极氧化铝膜作为掩模蚀刻基底基板的表面，以在基底表面上形成大量凹坑; 去除多孔阳极氧化铝膜; 并且通过晶体生长在基板的表面上形成GaN层。

公开(公告)号：US06738403B2

公开(公告)日：2004-05-18

申请号：US09826851

申请日：2001-04-06

申请人： Toshiaki Kuniyasu ,  Toshiro Hayakawa ,  Toshiaki Fukunaga

发明人： Toshiaki Kuniyasu ,  Toshiro Hayakawa ,  Toshiaki Fukunaga

IPC分类号： H01S500

CPC分类号： H01S5/024 ,  H01S3/09415 ,  H01S5/0207 ,  H01S5/0224 ,  H01S5/02264 ,  H01S5/02423 ,  H01S5/4025

摘要： In a semiconductor laser element having a plurality of semiconductor layers formed on a substrate, a groove-form concave portion is formed on the surface of the substrate opposite to the surface having the semiconductor layers. The concave portion is filled with metal having a higher heat conductivity higher than the substrate. The semiconductor laser element achieves improved heat dissipation characteristics and high reliability even under high-output operation.

公开(公告)号：US06999486B2

公开(公告)日：2006-02-14

申请号：US10787768

申请日：2004-02-27

申请人： Toshiaki Kuniyasu ,  Toshiro Hayakawa ,  Toshiaki Fukunaga

发明人： Toshiaki Kuniyasu ,  Toshiro Hayakawa ,  Toshiaki Fukunaga

IPC分类号： H01S3/04

CPC分类号： H01S5/024 ,  H01S3/09415 ,  H01S5/0207 ,  H01S5/0224 ,  H01S5/02264 ,  H01S5/02423 ,  H01S5/4025

摘要： In a semiconductor laser element having a plurality of semiconductor layers formed on a substrate, a groove-form concave portion is formed on the surface of the substrate opposite to the surface having the semiconductor layers. The concave portion is filled with metal having a higher heat conductivity higher than the substrate. The semiconductor laser element achieves improved heat dissipation characteristics and high reliability even under high-output operation.

公开(公告)号：US06901100B2

公开(公告)日：2005-05-31

申请号：US10187798

申请日：2002-07-03

申请人： Akihiro Mukaiyama ,  Toshiaki Fukunaga ,  Toshiaki Kuniyasu

发明人： Akihiro Mukaiyama ,  Toshiaki Fukunaga ,  Toshiaki Kuniyasu

IPC分类号： H01L21/205 ,  H01S5/16 ,  H01S5/00

CPC分类号： H01S5/16 ,  H01S5/168

摘要： In a semiconductor laser device: a p-type AlzGa1-zAs cladding layer is formed above an active layer, where z≧0.3; a p-type GaAs contact layer is formed on the cladding layer except for at least one near-edge portion of the cladding layer; and an electrode is formed on at least the contact layer. The upper surface of each of the at least one near-edge portion of the cladding layer is insulated, where each of the at least one near-edge portion of the cladding layer is located in a vicinity of one of opposite end facets perpendicular to the direction of laser emission.

摘要翻译： 在半导体激光器件中，在有机层的上方形成p型Al z Ga 1-z O z，其中z> = 0.3; 除了包层的至少一个近边缘部分之外，在包层上形成p型GaAs接触层; 并且至少在所述接触层上形成电极。 包覆层的至少一个近边缘部分的每一个的上表面是绝缘的，其中包层的至少一个近边缘部分中的每一个位于垂直于 激光发射方向。

公开(公告)号：US06797416B2

公开(公告)日：2004-09-28

申请号：US10391564

申请日：2003-03-20

申请人： Mitsugu Wada ,  Toshiaki Kuniyasu ,  Toshiaki Fukunaga

发明人： Mitsugu Wada ,  Toshiaki Kuniyasu ,  Toshiaki Fukunaga

IPC分类号： B32B900

CPC分类号： C30B25/02 ,  C30B25/04 ,  C30B25/18 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01S5/0213 ,  H01S5/0422 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/32341 ,  H01S2301/173 ,  H01S2304/04 ,  H01S2304/12 ,  Y10T428/12528 ,  Y10T428/24273

摘要： In a process for producing a substrate for use in a semiconductor element: a first GaN layer having a plurality of pits at its upper surface is formed; and then a second GaN layer is formed by growing a GaN crystal over the first GaN layer until the upper surface of the second GaN layer becomes flattened. Each of the above plurality of pits has an opening area of 0.005 to 100 &mgr;m2 and a depth of 0.1 to 10.0 &mgr;m.

摘要翻译： 在制造用于半导体元件的衬底的工艺中，形成在其上表面具有多个凹坑的第一GaN层; 然后通过在第一GaN层上生长GaN晶体直到第二GaN层的上表面变平为止形成第二GaN层。 上述多个凹坑的开口面积为0.005〜100μm，深度为0.1〜10.0μm。

公开(公告)号：US06859478B2

公开(公告)日：2005-02-22

申请号：US10341391

申请日：2003-01-14

申请人： Toshiaki Kuniyasu

发明人： Toshiaki Kuniyasu

IPC分类号： H01L33/14 ,  H01S5/16 ,  H01S5/223 ,  H01S5/30 ,  H01S5/343 ,  H01S5/00

CPC分类号： H01S5/164 ,  H01L33/145 ,  H01S5/305

摘要： In a process for producing a semiconductor light emitting device, first, a lamination including an active zone, cladding layers, and a current confinement layer is formed. Then, a near-edge portion of the lamination having a stripe width is removed so as to produce a first space, and a second near-edge portion located under the first space and a stripe portion of the lamination being located inside the first space and having the stripe width are concurrently removed so that a second space is produced, and cross sections of the active layer and the current confinement layer are exposed in the second space. Finally, the first and second spaces are filled with a regrowth layer so that a dopant to the regrowth layer is diffused into a near-edge region of the remaining portion of the active layer.

摘要翻译： 在制造半导体发光器件的方法中，首先，形成包括有源区，包覆层和电流限制层的层叠体。 然后，去除具有条纹宽度的层叠体的近边缘部分，以便产生第一空间，以及位于第一空间下方的第二近边缘部分和位于第一空间内部的叠片的条状部分， 具有带宽的同时被去除，从而产生第二空间，并且有源层和电流限制层的横截面在第二空间中露出。 最后，第一和第二空间填充有再生长层，使得再生长层的掺杂剂扩散到有源层的剩余部分的近边缘区域。

公开(公告)号：US07054135B2

公开(公告)日：2006-05-30

申请号：US11220693

申请日：2005-09-08

申请人： Toshiaki Kuniyasu

发明人： Toshiaki Kuniyasu

IPC分类号： H01G4/228

CPC分类号： H01G4/232 ,  H01L27/20 ,  H01L41/0475 ,  H01L41/083 ,  H01L41/293 ,  H01L41/338 ,  Y10T29/435

摘要： A multilayered structure array has narrow pitches by making thinner coatings for insulating internal electrode layers from side electrodes and the productivity of the multilayered structure array is improved. The multilayered structure includes: a first internal electrode layer; a piezoelectric layer formed on the first internal electrode layer; a second internal electrode layer formed on the piezoelectric layer; a first coating formed on an end surface of the first internal electrode layer in a first side surface region of the multilayered structure and containing one of metal oxide, metal nitride, metal fluoride and metal sulfide in at least one part thereof; and a second coating formed on an end surface of the second internal electrode layer in a second side surface region of the multilayered structure and containing one of metal oxide, metal nitride, metal fluoride and metal sulfide in at least one part thereof.

摘要翻译： 多层结构阵列具有窄的间距，通过制造较薄的涂层，用于将内部电极层与侧面电极绝缘，并且提高了多层结构阵列的生产率。 多层结构包括：第一内部电极层; 形成在所述第一内部电极层上的压电层; 形成在压电层上的第二内部电极层; 在所述多层结构体的第一侧面区域中形成在所述第一内部电极层的端面上的第一涂层，并且在其至少一部分中含有金属氧化物，金属氮化物，金属氟化物和金属硫化物中的一种; 以及第二涂层，其在所述多层结构体的第二侧表面区域中形成在所述第二内部电极层的端面上，并且在其至少一部分中含有金属氧化物，金属氮化物，金属氟化物和金属硫化物中的一种。