公开(公告)号：US06738403B2

公开(公告)日：2004-05-18

申请号：US09826851

申请日：2001-04-06

申请人： Toshiaki Kuniyasu ,  Toshiro Hayakawa ,  Toshiaki Fukunaga

发明人： Toshiaki Kuniyasu ,  Toshiro Hayakawa ,  Toshiaki Fukunaga

IPC分类号： H01S500

CPC分类号： H01S5/024 ,  H01S3/09415 ,  H01S5/0207 ,  H01S5/0224 ,  H01S5/02264 ,  H01S5/02423 ,  H01S5/4025

摘要： In a semiconductor laser element having a plurality of semiconductor layers formed on a substrate, a groove-form concave portion is formed on the surface of the substrate opposite to the surface having the semiconductor layers. The concave portion is filled with metal having a higher heat conductivity higher than the substrate. The semiconductor laser element achieves improved heat dissipation characteristics and high reliability even under high-output operation.

公开(公告)号：US06876688B1

公开(公告)日：2005-04-05

申请号：US09315068

申请日：1999-05-20

申请人： Toshiro Hayakawa ,  Toshiaki Fukunaga ,  Mitsugu Wada

发明人： Toshiro Hayakawa ,  Toshiaki Fukunaga ,  Mitsugu Wada

IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343

CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/2004 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/3213 ,  H01S5/32333 ,  H01S5/3407 ,  H01S5/343 ,  H01S5/3434 ,  H01S5/3436

摘要： A semiconductor laser has an active region which includes at least a quantum well layer and upper and lower optical waveguide layers and is of InxGa1−xAsyP1−y (0≦x≦1, 0≦y≦1). Upper and lower AlGaAs cladding layers are formed on opposite sides of the active region. At least one of the optical waveguide layers is not smaller than 0.25 μm in thickness, and a part of the upper cladding layer on the upper optical waveguide layer is selectively removed up to the interface of the upper cladding layer and the upper optical waveguide layer.

摘要翻译： 半导体激光器具有至少包括量子阱层和上下光波导层并且为In x Ga 1-x As y P 1-y（0≤x≤1,0<= y <1）的有源区。 上，下AlGaAs覆层形成在有源区的相对侧上。 至少一个光波导层的厚度不小于0.25μm，并且上光波导层上的上包层的一部分被选择性地去除到上包层和上光波导层的界面。

公开(公告)号：US06778573B2

公开(公告)日：2004-08-17

申请号：US09801695

申请日：2001-03-09

申请人： Toshiro Hayakawa ,  Toshiaki Fukunaga

发明人： Toshiro Hayakawa ,  Toshiaki Fukunaga

IPC分类号： H01S500

CPC分类号： H01S5/2231 ,  H01S5/0655 ,  H01S5/20 ,  H01S5/2004

摘要： In a semiconductor laser device including having an index-guided structure and oscillating in a fundamental transverse mode, a lower cladding layer, a lower optical waveguide layer, a quantum well layer, an upper optical waveguide layer, and a current confinement structure are formed in this order. The thickness of the upper optical waveguide layer is smaller than the thickness of the lower optical waveguide layer. In addition, the sum of the thicknesses of the upper and lower optical waveguide layers may be 0.5 micrometers or greater. Further, the distance between the bottom of the current confinement structure and the upper surface of the quantum well layer may be smaller than 0.25 micrometers.

摘要翻译： 在具有折射引导结构并以基本横模振荡的半导体激光装置中，形成下包层，下光波导层，量子阱层，上光波导层和电流限制结构 这个命令。 上光波导层的厚度小于下光波导层的厚度。 此外，上下光波导层的厚度之和可以为0.5微米以上。 此外，电流限制结构的底部与量子阱层的上表面之间的距离可以小于0.25微米。

公开(公告)号：US06625190B1

公开(公告)日：2003-09-23

申请号：US09648807

申请日：2000-08-28

申请人： Toshiro Hayakawa ,  Toshiaki Fukunaga ,  Mitsugu Wada

发明人： Toshiro Hayakawa ,  Toshiaki Fukunaga ,  Mitsugu Wada

IPC分类号： H01S319

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/204 ,  H01S5/34353 ,  H01S5/3436 ,  H01S5/34386

摘要： In a semiconductor laser device including an active region which is made of an aluminum-free material and a plurality of cladding layers made of at least one AlGaAs or AlGaInP material, the active region includes a quantum well layer and at least one optical waveguide layer; a portion of the at least one optical waveguide layer located on one side of the quantum well layer has a thickness of 0.25 &mgr;m or more; and the at least one optical waveguide layer, other than a portion of the at least one optical waveguide layer being located near the quantum well layer and having a thickness of at least 10 nm, is doped with impurity of 1017 cm−3 or more.

摘要翻译： 在包括由无铝材料制成的有源区和由至少一种AlGaAs或AlGaInP材料制成的多个覆层的半导体激光器件中，有源区包括量子阱层和至少一个光波导层; 位于量子阱层的一侧的至少一个光波导层的一部分具有0.25μm以上的厚度; 并且所述至少一个光波导层，除了所述至少一个光波导层的位于所述量子阱层附近并且具有至少10nm的厚度的部分之外，掺杂有10 17 cm -1的杂质， 3>以上。

公开(公告)号：US06999486B2

公开(公告)日：2006-02-14

申请号：US10787768

申请日：2004-02-27

申请人： Toshiaki Kuniyasu ,  Toshiro Hayakawa ,  Toshiaki Fukunaga

发明人： Toshiaki Kuniyasu ,  Toshiro Hayakawa ,  Toshiaki Fukunaga

IPC分类号： H01S3/04

CPC分类号： H01S5/024 ,  H01S3/09415 ,  H01S5/0207 ,  H01S5/0224 ,  H01S5/02264 ,  H01S5/02423 ,  H01S5/4025

摘要： In a semiconductor laser element having a plurality of semiconductor layers formed on a substrate, a groove-form concave portion is formed on the surface of the substrate opposite to the surface having the semiconductor layers. The concave portion is filled with metal having a higher heat conductivity higher than the substrate. The semiconductor laser element achieves improved heat dissipation characteristics and high reliability even under high-output operation.

公开(公告)号：US06885687B2

公开(公告)日：2005-04-26

申请号：US09840025

申请日：2001-04-24

申请人： Toshiro Hayakawa

发明人： Toshiro Hayakawa

IPC分类号： G02B6/02 ,  G02F1/377 ,  H01S5/06 ,  H01S5/065 ,  H01S5/14 ,  H01S5/323 ,  H01S5/00

CPC分类号： H01S5/141 ,  H01S3/109 ,  H01S5/005 ,  H01S5/0092 ,  H01S5/0656 ,  H01S5/143 ,  H01S5/146

摘要： A semiconductor laser module includes: a semiconductor laser element which emits laser light; a waveguide-type optical wavelength selection element which includes an optical waveguide, and selects a first portion of the laser light having a predetermined wavelength; and an optical wavelength conversion element which converts a second portion of the laser light having the predetermined wavelength to wavelength-converted laser light having a converted wavelength. The semiconductor laser element, the waveguide-type optical wavelength selection element, and the optical wavelength conversion element are coupled. The semiconductor laser element contains a multiple-quantum-well active layer including a plurality of quantum-well sublayers, where one of the plurality of quantum-well sublayers is different from another of the plurality of quantum-well sublayers in thickness and/or composition.

摘要翻译： 半导体激光器模块包括：发射激光的半导体激光元件; 波导型光波长选择元件，其包括光波导，并且选择具有预定波长的激光的第一部分; 以及光波长转换元件，其将具有预定波长的激光的第二部分转换成具有转换波长的波长转换激光。 半导体激光元件，波导型光波长选择元件和光波长转换元件被耦合。 半导体激光元件包含多量子阱活性层，其包括多个量子阱子层，其中多个量子阱子层中的一个与厚度和/或组成中的多个量子阱子层中的另一个不同 。

公开(公告)号：US06700912B2

公开(公告)日：2004-03-02

申请号：US09793138

申请日：2001-02-27

申请人： Toshiro Hayakawa

发明人： Toshiro Hayakawa

IPC分类号： H01S500

CPC分类号： H01S5/2232 ,  H01S5/2036 ,  H01S5/223 ,  H01S5/2231 ,  H01S5/4043

摘要： A high-output semiconductor laser element includes a plurality of laser structures which are superposed on a substrate one on another with a P+N+-tunnel junction intervening between each pair of the laser structures. Each of the laser structures includes at least one active layer interposed between a P-type clad layer and a N-type clad layer. The active region of each of the laser structures is not smaller than 10 &mgr;m and not larger than 80 &mgr;m in width. The distance h between the active layers which are most distant from each other in the active layers of the laser structures is not larger than the width W of the active region which is the widest in the laser structures. The width of said semiconductor laser element is not smaller than W+2h.

摘要翻译： 高输出半导体激光元件包括多个激光器结构，它们叠加在彼此之间的衬底上，并且在每对激光器结构之间插入有P + N + - 隧道结。 每个激光结构包括插入在P型覆盖层和N型覆盖层之间的至少一个有源层。 每个激光结构的有源区不小于10μm，宽度不大于80μm。 在激光结构的有源层中彼此最远的有源层之间的距离h不大于激光结构中最宽的有源区的宽度W. 所述半导体激光元件的宽度不小于W + 2h。

公开(公告)号：US06433345B1

公开(公告)日：2002-08-13

申请号：US09611972

申请日：2000-07-06

申请人： Katsumi Hayashi ,  Toshiro Hayakawa ,  Yoji Okazaki

发明人： Katsumi Hayashi ,  Toshiro Hayakawa ,  Yoji Okazaki

IPC分类号： F21V916

CPC分类号： G01N21/6456 ,  A61B1/043 ,  A61B1/063 ,  A61B1/0638 ,  A61B1/128 ,  A61B5/0071 ,  A61B5/0084 ,  G01N21/645 ,  G01N2021/6484 ,  G01N2201/0612

摘要： A fluorescence observing apparatus including a light source for emitting excitation light, an excitation light irradiation section for irradiating the excitation light to a sample, and a fluorescence measurement section for measuring fluorescence emitted from the sample by the irradiation of the excitation light. The temperature of the light source is always sensed by a thermistor, and a Peltier element disposed in direct contact with the light source is cooled by a control section so that the temperature of the light source is maintained at 20° C. or less.

摘要翻译： 包括用于发射激发光的光源的荧光观察装置，用于将激发光照射到样品的激发光照射部分和用于通过照射激发光来测量从样品发射的荧光的荧光测量部分。 光源的温度总是由热敏电阻感测，并且与光源直接接触的珀耳帖元件被控制部分冷却，使得光源的温度保持在20℃以下。

公开(公告)号：US5196369A

公开(公告)日：1993-03-23

申请号：US676652

申请日：1991-03-28

申请人： Toshiro Hayakawa

发明人： Toshiro Hayakawa

IPC分类号： H01L21/225 ,  H01L21/306 ,  H01L27/15 ,  H01L33/08 ,  H01L33/10 ,  H01L33/30 ,  H01L33/40

CPC分类号： H01L33/305 ,  H01L21/2258 ,  H01L21/30612 ,  H01L27/153 ,  Y10S148/099

摘要： A method of fabricating light emitting diode array devices is provided, said method comprising the steps of layering through crystal growth the second semiconductor layer with an impurity serving as the diffusion source on the first semiconductor layer, removing by etching the area of said second semiconductor layer other than the island-like area at the location corresponding to the location where light emitting diodes are to be formed, and diffusing said impurity on said first semiconductor layer from said island-like area as the diffusion source. According to this method, such complicated process as gaseous phase diffusion, depositing ZnO film as the diffusion source, etc. may be eliminated.

摘要翻译： 提供一种制造发光二极管阵列器件的方法，所述方法包括以下步骤：在第一半导体层上分层通过晶体生长第二半导体层和杂质作为扩散源，通过蚀刻去除所述第二半导体层的区域 除了在与要形成发光二极管的位置相对应的位置处的岛状区域之外，并且从所述岛状区域扩散所述第一半导体层上的杂质作为扩散源。 根据该方法，可以消除诸如气相扩散，沉积ZnO膜作为扩散源等复杂的过程。

公开(公告)号：US5105236A

公开(公告)日：1992-04-14

申请号：US676617

申请日：1991-03-28

申请人： Toshiro Hayakawa

发明人： Toshiro Hayakawa

IPC分类号： H01L27/15 ,  H01L33/06 ,  H01L33/08 ,  H01L33/10 ,  H01L33/14 ,  H01L33/30 ,  H01L33/40 ,  H01L33/46 ,  H01L33/58

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L27/153 ,  H01L33/0012 ,  H01L33/0025

摘要： A light-emitting diode array is fabricated by forming a light-emitting diode heterojunction at the interface between a superlattice layer comprised of alternations of a multiplicity of semiconductor layers that have different energy gaps, and a doped diffusion mixed region having a larger energy gap than that of the superlattice layer which is formed by impurity doping of part of the said superlattice layer. The light-emitting diode array thus formed exhibits low optical crosstalk and good diode uniformity.

摘要翻译： 通过在由具有不同能隙的多个半导体层的交替构成的超晶格层之间的界面处形成发光二极管异质结，并且具有比具有不同能隙的多个半导体层的掺杂扩散混合区域，制造发光二极管阵列 通过杂质掺杂部分所述超晶格层形成的超晶格层的厚度。 由此形成的发光二极管阵列表现出低的光串扰和良好的二极管均匀性。