Semiconductor device having improved insulated gate bipolar transistor and method for manufacturing the same
    11.
    发明申请
    Semiconductor device having improved insulated gate bipolar transistor and method for manufacturing the same 有权
    具有改进的绝缘栅双极晶体管的半导体器件及其制造方法

    公开(公告)号:US20070267663A1

    公开(公告)日:2007-11-22

    申请号:US11514994

    申请日:2006-09-05

    申请人: Tatsuo Harada

    发明人: Tatsuo Harada

    IPC分类号: H01L29/76

    摘要: An n-type first base layer is formed on a semiconductor substrate 1 having a first major surface and a second major surface, and a p-type second base layer is formed thereon. Between the first base layer and the second base layer, a carrier stored layer is formed. The carrier stored layer has a high-concentration impurity layer and a low concentration impurity layer, and the high-concentration impurity layer has a thickness of 1.5 μm or more and an impurity concentration therethrough is made to be 1.0×1016 cm−3 or more throughout the layer.

    摘要翻译: 在具有第一主表面和第二主表面的半导体衬底1上形成n型第一基底层,并且在其上形成p型第二基底层。 在第一基底层和第二基底层之间形成载体存储层。 载体存储层具有高浓度杂质层和低浓度杂质层,高浓度杂质层的厚度为1.5μm以上,杂质浓度为1.0×10 16, 在整个层中,超过3cm 3以上。

    Apparatus for moving table on stage
    12.
    发明授权
    Apparatus for moving table on stage 失效
    用于在舞台上移动桌子的装置

    公开(公告)号:US4358198A

    公开(公告)日:1982-11-09

    申请号:US188511

    申请日:1980-09-18

    摘要: An apparatus for moving a table or a stage having movable parts adapted to be guided by guide rail means slidingly and rectilinearly. At least the movable parts are made of a non-iron light metal material. The sliding surfaces of the movable parts making sliding contact with the guide rail means are made of a self-lubricating material, while the sliding surfaces of the guide rail means making sliding contact with the movable parts are made of a material having a higher hardness and wear resistance than the non-iron light metal material, so that the weight of at least the movable parts is reduced to decrease the weight of the apparatus as a whole.

    摘要翻译: 一种用于移动桌子或台架的装置,其具有适于被导轨装置滑动且直线地引导的可移动部件。 至少可移动部件由非铁轻金属材料制成。 与导轨装置滑动接触的可移动部件的滑动表面由自润滑材料制成,而与可移动部件滑动接触的导轨装置的滑动表面由具有较高硬度的材料制成, 耐磨性比非铁轻金属材料低,使得至少可移动部件的重量减小,从而降低整体装置的重量。

    Finish for synthetic filament yarn processed in friction false-twist texturing and application thereof
    14.
    发明授权
    Finish for synthetic filament yarn processed in friction false-twist texturing and application thereof 失效
    用于摩擦假捻加工的合成长丝纱线的表面处理及其应用

    公开(公告)号:US08112980B2

    公开(公告)日:2012-02-14

    申请号:US12677253

    申请日:2008-09-02

    IPC分类号: D01H13/30

    摘要: A finish for synthetic filament yarn which decreases broken filaments and ends down in friction false-twist texturing includes 40 to 98 wt % of a polyether compound, and essentially comprises components (A) and (B); wherein the component (A) is at least one member selected from the group consisting of (A1) a C1-C10 fatty acid, (A2) a C1-C10 hydroxyfatty acid, (A3) a sarcosine derivative, and salts thereof, and the amount of the component (A) in the finish ranges from 0.05 to 5 wt %; and wherein the component (B) is an alkylphosphate salt and the amount of the component (B) in the finish ranges from 0.01 to 3 wt %.

    摘要翻译: 合成长丝纱线的修整,其减少断裂的细丝并在摩擦假捻变形中终止,包括40至98重量%的聚醚化合物,并且基本上包含组分(A)和(B); 其中组分(A)为选自(A1)C1-C10脂肪酸,(A2)C1-C10羟基脂肪酸,(A3)肌氨酸衍生物及其盐的至少一种,和 组分(A)的含量在0.05〜5重量%范围内; 并且其中组分(B)是烷基磷酸盐,并且组合物(B)的量在0.01至3重量%范围内。

    Semiconductor device having junction-termination structure of resurf type
    15.
    发明授权
    Semiconductor device having junction-termination structure of resurf type 有权
    具有resurf型连接终端结构的半导体器件

    公开(公告)号:US06765239B2

    公开(公告)日:2004-07-20

    申请号:US10187369

    申请日:2002-07-02

    IPC分类号: H01L2974

    CPC分类号: H01L29/405 H01L29/7395

    摘要: A semiconductor device includes an active region with a main semiconductor device section, and a junction-termination region therearound. A first diffusion layer of a second conductivity type is formed in a surface of a first semiconductor layer of a first conductivity type, and extends from the active region into the junction-termination region. A second diffusion layer of the second conductivity type is formed in contact with the first diffusion layer, and extends in the junction-termination region. A first contact electrode is disposed in the active region and in contact with the first diffusion layer, and electrically connected to a first main electrode of the main semiconductor device section. A second contact electrode is disposed in the junction-termination region and in contact with the first diffusion layer, and surrounds the active region. A connection electrode electrically connects the first and second contact electrodes to each other.

    摘要翻译: 半导体器件包括具有主半导体器件部分的有源区和其周围的结终端区。 在第一导电类型的第一半导体层的表面中形成第二导电类型的第一扩散层,并且从有源区延伸到结终端区域。 形成与第一扩散层接触的第二导电类型的第二扩散层,并且在接合端子区域中延伸。 第一接触电极设置在有源区中并与第一扩散层接触,并且电连接到主半导体器件部分的第一主电极。 第二接触电极设置在接合端子区域中并且与第一扩散层接触并且围绕有源区域。 连接电极将第一和第二接触电极彼此电连接。

    Apparatus for precisely moving a table
    16.
    发明授权
    Apparatus for precisely moving a table 失效
    用于精确移动桌子的装置

    公开(公告)号:US4409860A

    公开(公告)日:1983-10-18

    申请号:US138095

    申请日:1980-04-07

    摘要: In an apparatus for precisely moving a table, rectilinear drive systems for both X- and Y-axes are fixed to a support frame, a movable stage is constructed so as to have its motion in the direction of one of these axes constrained by the motion of the rectilinear drive system for the one axis and to have its motion in the direction of the other axis constrained by the rectilinear motion of the rectilinear drive system for the other axis, and means for coupling the rectilinear drive system for at least one of the axes and the movable stage so as to have a backlash.

    摘要翻译: 在用于精确移动工作台的装置中,用于X轴和Y轴两者的直线驱动系统固定在支撑框架上,可动台被构造成使得其运动沿这些轴中的一个受到运动约束的方向 的直线驱动系统,并且沿着另一个轴线的直线运动限制的另一个轴线的方向运动;以及用于将直线驱动系统耦合到至少一个的直线驱动系统的装置, 轴和可动台以具有间隙。

    .DELTA..sup.2 -1,2,4-triazolin-5-one derivatives and herbicidal usage
thereof
    17.
    发明授权
    .DELTA..sup.2 -1,2,4-triazolin-5-one derivatives and herbicidal usage thereof 失效
    DELTA 2-1,2,4-三唑啉-5-酮衍生物及其除草用途

    公开(公告)号:US4318731A

    公开(公告)日:1982-03-09

    申请号:US162558

    申请日:1980-06-24

    CPC分类号: A01N43/653 C07D249/12

    摘要: A novel .DELTA..sup.2 -1,2,4-triazolin-5-one derivative having a herbicidal activity, which is represented by the formula ##STR1## wherein, R.sup.1 is a C.sub.1 -C.sub.4 alkyl; R.sup.2 is a hydrogen atom, a C.sub.1 -C.sub.6 alkyl group, or a C.sub.2 -C.sub.4 alkenyl group; and X is a hydroxy group, a C.sub.1 -C.sub.4 alkyl group, a C.sub.1 -C.sub.6 alkyloxy group, an alkyloxyalkyloxy group of which two alkyls may be same as or different from each other and each alkyl is of C.sub.1 -C.sub.4, a C.sub.2 -C.sub.4 alkenyloxy, or an alkyloxycarbonylalkyloxy group of which two alkyls may be same as or different from each other and each alkyl is of C.sub.1 -C.sub.4.

    摘要翻译: 具有除草活性的新颖的具有除草活性的DELTA 2-1,2,4-三唑啉-5-酮衍生物,其由下式表示:其中R1是C1-C4烷基; R2是氢原子,C1-C6烷基或C2-C4烯基; X为羟基,C 1〜C 4烷基,C 1〜C 6烷氧基,2个烷基可以相同或不同的烷氧基烷氧基,各烷基为C1-C4,C2-C4 链烯氧基或烷氧基羰基烷氧基,其中两个烷基可以彼此相同或不同,并且每个烷基是C1-C4。

    Semiconductor device
    19.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US07750438B2

    公开(公告)日:2010-07-06

    申请号:US12356891

    申请日:2009-01-21

    申请人: Tatsuo Harada

    发明人: Tatsuo Harada

    IPC分类号: H01L29/70

    CPC分类号: H01L29/7395 H01L29/0834

    摘要: An n-type buffer region 6 is arranged between an n− drift region 1 and a p-type collector region 7, and has a higher impurity concentration than n− drift region 1 Assuming that α represents the ratio (WTA/WTB) between WTA expressed as: WTA = 2 ⁢ ɛ s ⁢ ɛ 0 ⁢ V qNd and the thickness WTB of the drift region held between the base region and the buffer region, the ratio (DC/DB) of the net dose DC of the collector region with respect to the net dose DB of the buffer region is at least α. Thus, a semiconductor device capable of ensuring a proper margin of SCSOA resistance can be obtained.

    摘要翻译: n型缓冲区域6布置在n漂移区域1和p型集电极区域7之间,并且具有比n-漂移区域1更高的杂质浓度。假设α表示WTA之间的比率(WTA / WTB) 表示为:WTA =2εsε0 V qNd,保持在基极区域和缓冲区域之间的漂移区域的厚度WTB,集电极区域的净剂量DC的比(DC / DB)与 相对于缓冲区域的净剂量DB至少为α。 因此,可以获得能够确保SCSOA电阻的适当余量的半导体器件。