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公开(公告)号:USD668232S1
公开(公告)日:2012-10-02
申请号:US29398791
申请日:2011-08-04
申请人: Chien-Fu Shen , Tsun-Kai Ko , Schang-Jing Hon
设计人: Chien-Fu Shen , Tsun-Kai Ko , Schang-Jing Hon
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公开(公告)号:US20090162960A1
公开(公告)日:2009-06-25
申请号:US12379561
申请日:2009-02-25
申请人: Ta-Cheng Hsu , Jung-Min Hwang , Min-Hsun Hsieh , Ya-Lan Yang , De-Shan Kuo , Tsun-Kai Ko , Chien-Fu Shen , Ting-Chia Ko , Schang-Jing Hon
发明人: Ta-Cheng Hsu , Jung-Min Hwang , Min-Hsun Hsieh , Ya-Lan Yang , De-Shan Kuo , Tsun-Kai Ko , Chien-Fu Shen , Ting-Chia Ko , Schang-Jing Hon
CPC分类号: H01L33/0095
摘要: A method for manufacturing a light-emitting device comprising the steps of cutting a light-emitting unit by a laser beam, and cleaning the light-emitting unit by an acid solution to remove by-products resulted from the laser cutting.
摘要翻译: 一种发光装置的制造方法,其特征在于,包括以下步骤:用激光束切割发光单元,用酸溶液清洗发光单元,除去激光切割产生的副产物。
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公开(公告)号:US20130032848A1
公开(公告)日:2013-02-07
申请号:US13565993
申请日:2012-08-03
申请人: Chao-Hsing Chen , Chien-Fu Shen , Schang-Jing Hon , Tsun-Kai Ko , Wei-Yo Chen
发明人: Chao-Hsing Chen , Chien-Fu Shen , Schang-Jing Hon , Tsun-Kai Ko , Wei-Yo Chen
IPC分类号: H01L33/48
CPC分类号: H01L33/38 , H01L33/20 , H01L33/40 , H01L2224/48091 , H01L2224/48247 , H01L2924/12044 , H01L2933/0016 , H01L2924/00014 , H01L2924/00
摘要: An optoelectronic device comprises a semiconductor stack comprising a first semiconductor layer, an active layer and a second semiconductor layer, a first electrode electrically connecting with the first semiconductor layer, a second electrode electrically connecting with the second semiconductor layer, wherein there is a smallest distance D1 between the first electrode and the second electrode, a third electrode formed on a portion of the first electrode and electrically connecting with the first electrode and a fourth electrode formed on a portion of the first electrode and on a portion of the second electrode, and electrically connecting with the second electrode, wherein there is a smallest distance D2 between the third electrode and the fourth electrode, and the smallest distance D2 is smaller than the smallest distance D1.
摘要翻译: 光电子器件包括半导体堆叠,其包括第一半导体层,有源层和第二半导体层,与第一半导体层电连接的第一电极,与第二半导体层电连接的第二电极,其中存在最小距离 D1在第一电极和第二电极之间形成,第三电极形成在第一电极的一部分上并与第一电极电连接,第四电极形成在第一电极的一部分上并在第二电极的一部分上,以及 与第二电极电连接,其中在第三电极和第四电极之间具有最小距离D2,并且最小距离D2小于最小距离D1。
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公开(公告)号:USD644187S1
公开(公告)日:2011-08-30
申请号:US29367474
申请日:2010-08-09
申请人: Chien-Fu Shen , Tsun-Kai Ko , Schang-Jing Hon
设计人: Chien-Fu Shen , Tsun-Kai Ko , Schang-Jing Hon
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公开(公告)号:USD684127S1
公开(公告)日:2013-06-11
申请号:US29430112
申请日:2012-08-21
申请人: Chien-Fu Shen , Tsun-Kai Ko , Schang-Jing Hon
设计人: Chien-Fu Shen , Tsun-Kai Ko , Schang-Jing Hon
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公开(公告)号:US20120012867A1
公开(公告)日:2012-01-19
申请号:US13186218
申请日:2011-07-19
申请人: Chien-Fu Shen , Schang-Jing Hon , Tsun-Kai Ko , Alexander Chan Wang , Min-Hsun Hsieh , Cheng Nan Han
发明人: Chien-Fu Shen , Schang-Jing Hon , Tsun-Kai Ko , Alexander Chan Wang , Min-Hsun Hsieh , Cheng Nan Han
IPC分类号: H01L33/08
CPC分类号: H01L25/0753 , F21K9/00 , F21Y2105/10 , F21Y2105/12 , F21Y2113/13 , F21Y2115/10 , H01L33/50 , H01L33/505 , H01L33/60 , H01L2224/48091 , H01L2224/48137 , H01L2924/0002 , H01L2924/00014 , H01L2924/00
摘要: The present application provides a multi-dimensional light-emitting device electrically connected to a power supply system. The multi-dimensional light-emitting device comprises a substrate, a blue light-emitting diode array and one or more phosphor layers. The blue light-emitting diode array, disposed on the substrate, comprises a plurality of blue light-emitting diode chips which are electrically connected. The multi-dimensional light-emitting device comprises a central area and a plurality of peripheral areas, which are arranged around the central area. The phosphor layer covers the central area. When the power supply system provides a high voltage, the central area and the peripheral areas of the multi-dimensional light-emitting device provide a first light and a plurality of second lights, respectively. The first light and the second lights are blended into a mixed light.
摘要翻译: 本申请提供了电连接到电源系统的多维发光装置。 多维发光装置包括基板,蓝色发光二极管阵列和一个或多个荧光体层。 设置在基板上的蓝色发光二极管阵列包括电连接的多个蓝色发光二极管芯片。 多维发光装置包括围绕中心区域布置的中心区域和多个周边区域。 磷光体层覆盖中心区域。 当电源系统提供高电压时,多维发光装置的中心区域和外围区域分别提供第一光和多个第二光。 第一个光和第二个光被混合成混合光。
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公开(公告)号:US08043878B2
公开(公告)日:2011-10-25
申请号:US12379561
申请日:2009-02-25
申请人: Ta-Cheng Hsu , Jung-Min Hwang , Min-Hsun Liu , Ya-Lan Yang , De-Shan Kuo , Tsun-Kai Ko , Chien-Fu Shen , Ting-Chia Ko , Schang-Jing Hon
发明人: Ta-Cheng Hsu , Jung-Min Hwang , Min-Hsun Liu , Ya-Lan Yang , De-Shan Kuo , Tsun-Kai Ko , Chien-Fu Shen , Ting-Chia Ko , Schang-Jing Hon
IPC分类号: H01L21/00
CPC分类号: H01L33/0095
摘要: A method for manufacturing a light-emitting device comprising the steps of cutting a light-emitting unit by a laser beam, and cleaning the light-emitting unit by an acid solution to remove by-products resulted from the laser cutting.
摘要翻译: 一种发光装置的制造方法,其特征在于,包括以下步骤:用激光束切割发光单元,用酸溶液清洗发光单元,除去激光切割产生的副产物。
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公开(公告)号:USD644188S1
公开(公告)日:2011-08-30
申请号:US29367759
申请日:2010-08-12
申请人: Chien-Fu Shen , Tsun-Kai Ko , Schang-Jing Hon
设计人: Chien-Fu Shen , Tsun-Kai Ko , Schang-Jing Hon
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公开(公告)号:US08519430B2
公开(公告)日:2013-08-27
申请号:US13225117
申请日:2011-09-02
申请人: Wei-Chih Peng , Min-Hsun Hsieh , Ming-Chi Hsu , Wei-Yu Yen , Chun-Kai Wang , Yen-Chih Chen , Schang-Jing Hon , Hsin-Ying Wang , Chien-Kai Chung
发明人: Wei-Chih Peng , Min-Hsun Hsieh , Ming-Chi Hsu , Wei-Yu Yen , Chun-Kai Wang , Yen-Chih Chen , Schang-Jing Hon , Hsin-Ying Wang , Chien-Kai Chung
IPC分类号: H01L33/00
CPC分类号: H01L33/22 , H01L31/0543 , H01L31/0547 , H01L31/075 , H01L33/0066 , H01L33/12 , H01L33/16 , H01L33/305 , H01L33/46 , Y02E10/52 , Y02E10/548
摘要: An optoelectronic device includes a substrate and a first transition stack formed on the substrate including at least a first transition layer formed on the substrate and having at least one hollow component formed inside the first transition layer, and a second transition layer wherein the second transition layer is an unintentional doped layer or an undoped layer formed on the first transition layer.
摘要翻译: 光电子器件包括衬底和形成在衬底上的第一过渡堆叠,其包括至少形成在衬底上的第一过渡层,并且具有形成在第一过渡层内部的至少一个中空部件,以及第二过渡层,其中第二过渡层 是形成在第一过渡层上的无意掺杂层或未掺杂层。
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公开(公告)号:US20120104455A1
公开(公告)日:2012-05-03
申请号:US13225117
申请日:2011-09-02
申请人: Wei-Chih PENG , Min-Hsun Hsieh , Ming-Chi Hsu , Wei-Yu Yen , Chun-Kai Wang , Yen-Chih Chen , Schang-Jing Hon , Hsin-Ying Wang , Chien-Kai Chung
发明人: Wei-Chih PENG , Min-Hsun Hsieh , Ming-Chi Hsu , Wei-Yu Yen , Chun-Kai Wang , Yen-Chih Chen , Schang-Jing Hon , Hsin-Ying Wang , Chien-Kai Chung
CPC分类号: H01L33/22 , H01L31/0543 , H01L31/0547 , H01L31/075 , H01L33/0066 , H01L33/12 , H01L33/16 , H01L33/305 , H01L33/46 , Y02E10/52 , Y02E10/548
摘要: An optoelectronic device includes a substrate and a first transition stack formed on the substrate including at least a first transition layer formed on the substrate and having at least one hollow component formed inside the first transition layer, and a second transition layer wherein the second transition layer is an unintentional doped layer or an undoped layer formed on the first transition layer.
摘要翻译: 光电子器件包括衬底和形成在衬底上的第一过渡堆叠,其包括至少形成在衬底上的第一过渡层,并且具有形成在第一过渡层内部的至少一个中空部件,以及第二过渡层,其中第二过渡层 是形成在第一过渡层上的无意掺杂层或未掺杂层。
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