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公开(公告)号：US09530696B1
公开(公告)日：2016-12-27
申请号：US14921514
申请日：2015-10-23
Applicant: United Microelectronics Corp.
Inventor： Wei-Hsin Liu , Fu-Yu Tsai , Bin-Siang Tsai , Wei-Lun Hsu , Shang-Yi Yang , Pi-Hsuan Lai
IPC: H01L21/02 , H01L29/66 , H01L29/78 , H01L21/8234 , H01L21/321 , H01L21/311 , H01L21/3105
CPC classification number: H01L21/823431 , H01L21/823425 , H01L21/823437 , H01L29/66545 , H01L29/6656 , H01L29/66636 , H01L29/7848
Abstract: A method of fabricating a semiconductor device is provided. A plurality of sacrificial gates and a plurality of sacrificial gate dielectric layers thereunder are formed on a substrate. An interlayer dielectric layer is filled between the sacrificial gates. A protective layer is formed on the interlayer dielectric layer. The sacrificial gates and the sacrificial gate dielectric layers are removed to form an opening, wherein the interlayer dielectric layer is protected by the protective layer from recessing. A stacked gate structure is formed in the opening, wherein the protective layer is removed.
Abstract translation: 提供一种制造半导体器件的方法。 在基板上形成有多个牺牲栅极和其下的多个牺牲栅介质层。 在牺牲栅极之间填充层间电介质层。 在层间电介质层上形成保护层。 去除牺牲栅极和牺牲栅极电介质层以形成开口，其中层间介电层被保护层保护而不被凹陷。 在开口中形成堆叠的栅极结构，其中保护层被去除。
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公开(公告)号：US20250054883A1
公开(公告)日：2025-02-13
申请号：US18244320
申请日：2023-09-11
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Da-Jun Lin , Bin-Siang Tsai , Fu-Yu Tsai , Chung-Yi Chiu
IPC: H01L23/64 , H01L23/498
Abstract: An interposer includes a substrate having an inductor forming region thereon, a plurality of trenches within the inductor forming region in the substrate, a buffer layer lining interior surfaces of the plurality of trenches and forming air gaps within the plurality of trenches, and an inductor coil pattern embedded in the buffer layer within the inductor forming region.
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公开(公告)号：US20250008842A1
公开(公告)日：2025-01-02
申请号：US18885729
申请日：2024-09-15
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Tai-Cheng Hou , Fu-Yu Tsai , Bin-Siang Tsai , Da-Jun Lin , Chau-Chung Hou , Wei-Xin Gao
Abstract: A method for fabricating a semiconductor device includes the steps of: providing a substrate, wherein the substrate comprises a MRAM region and a logic region; forming a magnetic tunneling junction (MTJ) on the MRAM region; forming a top electrode on the MTJ; and then performing a flowable chemical vapor deposition (FCVD) process to form a first inter-metal dielectric (IMD) layer around the top electrode and the MTJ.
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公开(公告)号：US20240213304A1
公开(公告)日：2024-06-27
申请号：US18107521
申请日：2023-02-09
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Da-Jun Lin , Bin-Siang Tsai , Fu-Yu Tsai , Chung-Yi Chiu
IPC: H01L27/06 , H01L21/285 , H01L21/768 , H01L23/522 , H01L23/532
CPC classification number: H01L28/60 , H01L21/28556 , H01L21/76843 , H01L21/76877 , H01L23/5226 , H01L23/53228 , H01L23/53295 , H01L27/0629 , H01L27/0647
Abstract: An MIM capacitor structure includes numerous inter-metal dielectrics. A trench is embedded within the inter-metal dielectrics. A capacitor is disposed within the trench. The capacitor includes a first electrode layer, a capacitor dielectric layer and a second electrode layer. The first electrode layer, the capacitor dielectric layer and the second electrode layer fill in and surround the trench. The capacitor dielectric layer is between the first electrode layer and the second electrode layer. A silicon oxide liner surrounds a sidewall of the trench and contacts the first electrode layer.
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公开(公告)号：US11871677B2
公开(公告)日：2024-01-09
申请号：US17180876
申请日：2021-02-22
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Tai-Cheng Hou , Fu-Yu Tsai , Bin-Siang Tsai , Da-Jun Lin , Chau-Chung Hou , Wei-Xin Gao
Abstract: A method for fabricating a semiconductor device includes the steps of: providing a substrate, wherein the substrate comprises a MRAM region and a logic region; forming a magnetic tunneling junction (MTJ) on the MRAM region; forming a top electrode on the MTJ; and then performing a flowable chemical vapor deposition (FCVD) process to form a first inter-metal dielectric (IMD) layer around the top electrode and the MTJ.
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Patent Agency Ranking
公开(公告)号：US20230369436A1
公开(公告)日：2023-11-16
申请号：US17837054
申请日：2022-06-10
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Da-Jun Lin , Fu-Yu Tsai , Bin-Siang Tsai , Chung-Yi Chiu
IPC: H01L29/45 , H01L21/285 , H01L29/66 , H01L29/778 , H01L29/20
CPC classification number: H01L29/452 , H01L21/28575 , H01L29/66462 , H01L29/7787 , H01L29/2003
Abstract: A method for forming ohmic contacts on a compound semiconductor device is disclosed. A channel layer is formed on a substrate. A barrier layer is formed on the channel layer. A passivation layer is formed on the barrier layer. A contact area is formed by etching through the passivation layer and the barrier layer. The channel layer is partially exposed at a bottom of the contact area. A sacrificial metallic layer is conformally deposited on the contact area. The sacrificial metallic layer is subjected to an annealing process, thereby forming a heavily doped region in the channel layer directly under the sacrificial metallic layer. The sacrificial metallic layer is removed to expose the heavily doped region. A metal silicide layer is formed on the heavily doped region.
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公开(公告)号：US20230369435A1
公开(公告)日：2023-11-16
申请号：US17835956
申请日：2022-06-08
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Da-Jun Lin , Fu-Yu Tsai , Bin-Siang Tsai , Chung-Yi Chiu
IPC: H01L29/45 , H01L29/20 , H01L29/205 , H01L29/778 , H01L29/40 , H01L21/285 , H01L29/66
CPC classification number: H01L29/452 , H01L29/2003 , H01L29/205 , H01L29/7786 , H01L29/401 , H01L21/28575 , H01L29/66462
Abstract: A compound semiconductor device includes a substrate, a channel layer on the substrate, a barrier layer on the channel layer, a passivation layer on the barrier layer, and a contact area recessed into the passivation layer and the barrier layer. The channel layer is partially exposed at a bottom of the contact area. A bi-layer silicide film is disposed on the contact area. A copper contact is disposed on the bi-layer silicide film.
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公开(公告)号：US20230329004A1
公开(公告)日：2023-10-12
申请号：US18209482
申请日：2023-06-14
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Da-Jun Lin , Yi-An Shih , Bin-Siang Tsai , Fu-Yu Tsai
Abstract: A method for fabricating a semiconductor device includes the steps of first forming a magnetic tunneling junction (MTJ) on a substrate, forming a top electrode on the MTJ, forming an inter-metal dielectric (IMD) layer around the top electrode and the MTJ, forming a landing layer on the IMD layer and the MTJ, and then patterning the landing layer to form a landing pad. Preferably, the landing pad is disposed on the top electrode and the IMD layer adjacent to one side of the top electrode.
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公开(公告)号：US11707003B2
公开(公告)日：2023-07-18
申请号：US17140981
申请日：2021-01-04
Applicant: United Microelectronics Corp.
Inventor： Chich-Neng Chang , Da-Jun Lin , Shih-Wei Su , Fu-Yu Tsai , Bin-Siang Tsai
CPC classification number: H10N70/24 , H10B63/30 , H10N70/063 , H10N70/826 , H10N70/841
Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a device substrate, a resistance variable layer and a top electrode. The bottom electrode is disposed on the device substrate. The resistance variable layer is disposed on the bottom electrode. The top electrode is disposed on the resistance variable layer. The bottom electrode is formed with a tensile stress, while the top electrode is formed with a compressive stress.
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公开(公告)号：US11676920B2
公开(公告)日：2023-06-13
申请号：US17159080
申请日：2021-01-26
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Da-Jun Lin , Bin-Siang Tsai , Fu-Yu Tsai
IPC: H01L23/00
CPC classification number: H01L24/05 , H01L24/45 , H01L2224/05124 , H01L2224/45147 , H01L2224/45464
Abstract: A method for fabricating a semiconductor device includes the steps of first forming an aluminum (Al) pad on a substrate, forming a passivation layer on the substrate and an opening exposing the Al pad, forming a cobalt (Co) layer in the opening and on the Al pad, bonding a wire onto the Co layer, and then performing a thermal treatment process to form a Co—Pd alloy on the Al pad.
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