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    Permanent light coupling arrangement and method for use with thin silicon optical waveguides
    11.
    发明授权
    Permanent light coupling arrangement and method for use with thin silicon optical waveguides 有权
    永久光耦合布置及其与薄硅光波导的使用方法

    公开(公告)号：US07020364B2

    公开(公告)日：2006-03-28

    申请号：US10668947

    申请日：2003-09-23

    申请人： Margaret Ghiron ,  Prakash Gothoskar ,  Robert Keith Montgomery ,  Vipulkumar Patel ,  Soham Pathak ,  Kalpendu Shastri ,  Katherine A. Yanushefski

    发明人： Margaret Ghiron ,  Prakash Gothoskar ,  Robert Keith Montgomery ,  Vipulkumar Patel ,  Soham Pathak ,  Kalpendu Shastri ,  Katherine A. Yanushefski

    IPC分类号： G02B6/34

    CPC分类号： G02B6/4206

    摘要： A trapezoidal shaped single-crystal silicon prism is formed and permanently attached to an SOI wafer, or any structure including a silicon optical waveguide. In order to provide efficient optical coupling, the dopant species and concentration within the silicon waveguide is chosen such that the refractive index of the silicon waveguide is slightly less than that of the prism coupler (refractive index of silicon≈3.5). An intermediate evanescent coupling layer, disposed between the waveguide and the prism coupler, comprises a refractive index less than both the prism and the waveguide. In one embodiment, the evanescent coupling layer comprises a constant thickness. In an alternative embodiment, the evanescent coupling layer may be tapered to improve coupling efficiency between the prism and the waveguide. Methods of making the coupling arrangement are also disclosed.

    摘要翻译： 形成梯形形状的单晶硅棱镜，并且永久地附着到SOI晶片或包括硅光波导的任何结构。 为了提供有效的光耦合，选择硅波导内的掺杂物种类和浓度使得硅波导的折射率略小于棱镜耦合器的折射率（硅折射率为0.35）。 设置在波导和棱镜耦合器之间的中间消逝耦合层包括小于棱镜和波导两者的折射率。 在一个实施例中，ev逝耦合层包括恒定的厚度。 在替代实施例中，渐逝耦合层可以是锥形的，以提高棱镜和波导之间的耦合效率。 还公开了制造耦合装置的方法。

    Silicon nanotaper couplers and mode-matching devices
    12.
    发明授权
    Silicon nanotaper couplers and mode-matching devices 有权
    硅纳米器耦合器和模式匹配器件

    公开(公告)号：US07013067B2

    公开(公告)日：2006-03-14

    申请号：US11054205

    申请日：2005-02-09

    申请人： Margaret Ghiron ,  Prakash Gothoskar ,  Robert Keith Montgomery ,  Vipulkumar Patel ,  Soham Pathak ,  Kalpendu Shastri ,  Katherine A. Yanushefski

    发明人： Margaret Ghiron ,  Prakash Gothoskar ,  Robert Keith Montgomery ,  Vipulkumar Patel ,  Soham Pathak ,  Kalpendu Shastri ,  Katherine A. Yanushefski

    IPC分类号： G02B6/26

    CPC分类号： G02B6/1228 ,  G02B6/4204

    摘要： An arrangement for coupling between a free-space propagating optical signal and an ultrathin silicon waveguide formed in an upper silicon layer (SOI layer) of a silicon-an-insulator (SOI) structure includes a silicon nanotaper structure formed in the (SOI layer) and coupled to the ultrathin silicon waveguide. A dielectric waveguide coupling layer is disposed so as to overly a portion of a dielectric insulating layer in a region where an associated portion of the SOI layer has been removed. An end portion of the dielectric waveguide coupling layer is disposed to overlap an end section of the silicon nanotaper to form a mode conversion region between the free-space signal and the ultrathin silicon waveguide. A free-space optical coupling arrangement is disposed over the dielectric waveguide coupling layer and used to couple between free space and the dielectric waveguide coupling layer and thereafter into the ultrathin silicon waveguide.

    摘要翻译： 在自由空间传播的光信号和形成于硅 - 绝缘体（SOI））结构的上硅层（SOI层）中的超薄硅波导之间的耦合的布置包括在（SOI层）中形成的硅纳米锥结构， 并耦合到超薄硅波导。 电介质波导耦合层设置成在去除了SOI层的相关部分的区域中的绝缘层的一部分上。 电介质波导耦合层的端部设置成与硅纳米锥的端部部分重叠以在自由空间信号和超薄硅波导之间形成模式转换区域。 自由空间光耦合装置设置在电介质波导耦合层上，用于将自由空间与电介质波导耦合层之间耦合，此后进入超薄硅波导。

    Method of using a Manhattan layout to realize non-Manhattan shaped optical structures
    13.
    发明授权
    Method of using a Manhattan layout to realize non-Manhattan shaped optical structures 有权
    使用曼哈顿布局实现非曼哈顿形光学结构的方法

    公开(公告)号：US07000207B2

    公开(公告)日：2006-02-14

    申请号：US10820356

    申请日：2004-04-08

    申请人： Prakash Gothoskar ,  Margaret Ghiron ,  Vipulkumar Patel ,  Robert Keith Montgomery ,  Kalpendu Shastri ,  Soham Pathak ,  Katherine A. Yanushefski

    发明人： Prakash Gothoskar ,  Margaret Ghiron ,  Vipulkumar Patel ,  Robert Keith Montgomery ,  Kalpendu Shastri ,  Soham Pathak ,  Katherine A. Yanushefski

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5077

    摘要： A system and method for providing the layout of non-Manhattan shaped integrated circuit elements using a Manhattan layout system utilizes a plurality of minimal sized polygons (e.g., rectangles) to fit within the boundaries of the non-Manhattan element. The rectangles are fit such that at least one vertex of each rectangle coincides with a grid point on the Manhattan layout system. Preferably, the rectangles are defined by using the spacing being adjacent grid points as the height of each rectangle. As the distance between adjacent grid points decreases, the layout better matches the actual shape of the non-Manhattan element. The system and method then allows for electrical and optical circuit elements to be laid out simultaneously, using the same layout software and equipment.

    摘要翻译： 使用曼哈顿布局系统提供非曼哈顿形集成电路元件的布局的系统和方法利用多个最小尺寸的多边形（例如，矩形）来装配在非曼哈顿元件的边界内。 矩形被配合成使得每个矩形的至少一个顶点与曼哈顿布局系统上的网格点重合。 优选地，通过使用相邻网格点的间隔作为每个矩形的高度来定义矩形。 随着相邻网格点之间的距离减小，布局更好地匹配非曼哈顿元素的实际形状。 然后，系统和方法可以使用相同的布局软件和设备同时布置电气和光学电路元件。

    Mode transformation and loss reduction in silicon waveguide structures utilizing tapered transition regions
    14.
    发明授权
    Mode transformation and loss reduction in silicon waveguide structures utilizing tapered transition regions 有权
    利用锥形过渡区域的硅波导结构中的模式转换和损耗减小

    公开(公告)号：US06980720B2

    公开(公告)日：2005-12-27

    申请号：US10818415

    申请日：2004-04-05

    申请人： Prakash Gothoskar ,  Margaret Ghiron ,  Vipulkumar Patel ,  Robert Keith Montgomery ,  Kalpendu Shastri ,  Soham Pathak ,  Katherine A. Yanushefski

    发明人： Prakash Gothoskar ,  Margaret Ghiron ,  Vipulkumar Patel ,  Robert Keith Montgomery ,  Kalpendu Shastri ,  Soham Pathak ,  Katherine A. Yanushefski

    IPC分类号： G02B6/12 ,  G02B6/122 ,  G02B6/26 ,  G02B6/32

    CPC分类号： G02B6/1228 ,  G02B2006/12097

    摘要： A low loss coupling arrangement between a slab/strip waveguide and a rib waveguide in an optical waveguiding structure formed on a silicon-on-insulator (SOI) platform utilizes tapered sections at the input and/or output of the rib waveguide to reduce loss. Optical reflections are reduced by using silicon tapers (either vertical tapers, horizontal tapers, or two-dimensional tapers) that gradually transition the effective index seen by an optical signal propagating along the slab/strip waveguide and subsequently into and out of the rib waveguide. Loss can be further reduced by using adiabatically contoured silicon regions at the input and output of the rib waveguide to reduce mode mismatch between the slab/strip waveguide and rib waveguide. In a preferred embodiment, concatenated tapered and adiabatic sections can be used to provide for reduced optical reflection loss and reduced optical mode mismatch.

    摘要翻译： 形成在绝缘体上硅（SOI）平台上的光波导结构中的板/条波导和肋波导之间的低损耗耦合布置在肋波导的输入和/或输出处利用锥形部分来减少损耗。 通过使用沿着板/条波导传播的随后进入和离开肋波导的光信号逐渐转变的有效折射率的硅锥（垂直锥度，水平锥度或二维锥度）来减少光学反射。 通过在肋波导的输入和输出处使用绝热的轮廓的硅区域来减少损耗，以减少板/波导管和肋波导之间的模式失配。 在优选实施例中，级联的锥形和绝热部分可用于提供减少的光学反射损失和减小的光学模式失配。

    High-speed silicon-based electro-optic modulator
    16.
    发明授权
    High-speed silicon-based electro-optic modulator 有权
    高速硅基电光调制器

    公开(公告)号：US06845198B2

    公开(公告)日：2005-01-18

    申请号：US10795748

    申请日：2004-03-08

    申请人： Robert Keith Montgomery ,  Margaret Ghiron ,  Prakash Gothoskar ,  Vipulkumar Patel ,  Kalpendu Shastri ,  Soham Pathak ,  Katherine A. Yanushefski

    发明人： Robert Keith Montgomery ,  Margaret Ghiron ,  Prakash Gothoskar ,  Vipulkumar Patel ,  Kalpendu Shastri ,  Soham Pathak ,  Katherine A. Yanushefski

    IPC分类号： G02F1/025 ,  G02F1/225 ,  G02B6/26

    CPC分类号： G02F1/025 ,  G02B2006/12142 ,  G02B2006/12159 ,  G02F1/2257

    摘要： A silicon-based electro-optic modulator is based on forming a gate region of a first conductivity to partially overly a body region of a second conductivity type, with a relatively thin dielectric layer interposed between the contiguous portions of the gate and body regions. The modulator may be formed on an SOI platform, with the body region formed in the relatively thin silicon surface layer of the SOI structure and the gate region formed of a relatively thin silicon layer overlying the SOI structure. The doping in the gate and body regions is controlled to form lightly doped regions above and below the dielectric, thus defining the active region of the device. Advantageously, the optical electric field essentially coincides with the free carrier concentration area in this active device region. The application of a modulation signal thus causes the simultaneous accumulation, depletion or inversion of free carriers on both sides of the dielectric at the same time, resulting in high speed operation.

    摘要翻译： 基于硅的电光调制器基于形成第一导电性的栅极区域，以部分地超过第二导电类型的体区，其中相对薄的电介质层插入在栅极和主体区域的邻接部分之间。 调制器可以形成在SOI平台上，其中主体区域形成在SOI结构的相对薄的硅表面层中，并且栅极区域由覆盖SOI结构的相对薄的硅层形成。 控制栅极和体区中的掺杂以形成电介质上方和下方的轻掺杂区域，从而限定器件的有源区。 有利地，光电场基本上与该有源器件区域中的自由载流子浓度区域重合。 因此，调制信号的应用同时导致电介质两侧的自由载流子的同时累积，消耗或反转，导致高速运行。

    Interfacing multiple wavelength sources to thin optical waveguides utilizing evanescent coupling
    20.
    发明授权
    Interfacing multiple wavelength sources to thin optical waveguides utilizing evanescent coupling 有权
    使用ev逝耦合将多个波长源连接到薄光波导上

    公开(公告)号：US07058261B2

    公开(公告)日：2006-06-06

    申请号：US10935146

    申请日：2004-09-07

    申请人： Margaret Ghiron ,  Prakash Gothoskar ,  Robert Keith Montgomery ,  Vipulkumar Patel ,  Soham Pathak ,  Kalpendu Shastri ,  Katherine A. Yanushefski

    发明人： Margaret Ghiron ,  Prakash Gothoskar ,  Robert Keith Montgomery ,  Vipulkumar Patel ,  Soham Pathak ,  Kalpendu Shastri ,  Katherine A. Yanushefski

    IPC分类号： G02B6/34

    CPC分类号： G02B6/12007 ,  G02B6/124 ,  G02B6/34

    摘要： An arrangement for achieving and maintaining high efficiency coupling of light between a multi-wavelength optical signal and a relatively thin (e.g., sub-micron) silicon optical waveguide uses a prism coupler in association with an evanescent coupling layer. A grating structure having a period less than the wavelengths of transmission is formed in the coupling region (either formed in the silicon waveguide, evanescent coupling layer, prism coupler, or any combination thereof) so as to increase the effective refractive index “seen” by the multi-wavelength optical signal in the area where the beam exiting/entering the prism coupler intercepts the waveguide surface (referred to as the “prism coupling surface”). The period and/or duty cycle of the grating can be controlled to modify the effective refractive index profile in the direction away from the coupling region so as to reduce the effective refractive index from the relatively high value useful in multi-wavelength coupling to the lower value associated with maintaining confinement of the optical signals within the surface waveguide structure, thus reducing reflections along the transition region.

    摘要翻译： 用于实现和维持多波长光信号和较薄（例如亚微米）硅光波导之间的高效率耦合的布置使用与渐逝耦合层相关联的棱镜耦合器。 在耦合区域（形成在硅波导，ev逝耦合层，棱镜耦合器或其任何组合中）形成具有小于透射波长的周期的光栅结构，以便通过“看到”来提高有效折射率 离开/进入棱镜耦合器的光束截取波导表面（称为“棱镜耦合表面”）的区域中的多波长光信号。 可以控制光栅的周期和/或占空比以在远离耦合区域的方向上改变有效折射率分布，以便将有效折射率从在多波长耦合中的有用折射率降低到较低的值 与保持表面波导结构内的光信号的限制相关联的值，从而减少沿着过渡区域的反射。