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    Anisotropic conducting films for electromagnetic radiation applications
    15.
    发明授权
    Anisotropic conducting films for electromagnetic radiation applications 有权
    用于电磁辐射应用的各向异性导电膜

    公开(公告)号：US09059335B2

    公开(公告)日：2015-06-16

    申请号：US13778770

    申请日：2013-02-27

    Applicant: Wisconsin Alumni Research Foundation

    Inventor： Francesca Cavallo ,  Max G. Lagally ,  Richard Rojas-Delgado

    IPC: H01L31/00 ,  H01L21/02 ,  H01L29/16

    CPC classification number: H01L31/00 ,  H01L21/02381 ,  H01L21/02532 ,  H01L29/1606 ,  H01L49/00

    Abstract: Electronic devices for the generation of electromagnetic radiation are provided. Also provided are methods for using the devices to generate electromagnetic radiation. The radiation sources include an anisotropic electrically conducting thin film that is characterized by a periodically varying charge carrier mobility in the plane of the film. The periodic variation in carrier mobility gives rise to a spatially varying electric field, which produces electromagnetic radiation as charged particles pass through the film.

    Abstract translation: 提供了用于产生电磁辐射的电子装置。 还提供了使用这些装置产生电磁辐射的方法。 辐射源包括各向异性导电薄膜，其特征在于膜的平面中周期性变化的载流子迁移率。 载流子迁移率的周期性变化产生空间变化的电场，当带电粒子通过膜时，电场产生电磁辐射。

    Doped and strained flexible thin-film transistors
    16.
    发明授权
    Doped and strained flexible thin-film transistors 有权
    掺杂和应变柔性薄膜晶体管

    公开(公告)号：US09006785B2

    公开(公告)日：2015-04-14

    申请号：US13751477

    申请日：2013-01-28

    Applicant: Wisconsin Alumni Research Foundation

    Inventor： Zhenqiang Ma ,  Jung-Hun Seo ,  Max G. Lagally

    IPC: H01L31/072 ,  H01L29/32 ,  H01L29/786

    CPC classification number: H01L29/32 ,  H01L29/66742 ,  H01L29/7849 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78687 ,  H01L29/78696

    Abstract: Semiconductor trilayer structures that are doped and strained are provided. Also provided are mechanically flexible transistors, including radiofrequency transistors, incorporating the trilayer structures and methods for fabricating the trilayer structures and transistors. The trilayer structures comprise a first layer of single-crystalline semiconductor material, a second layer of single-crystalline semiconductor material and a third layer of single-crystalline semiconductor material. In the structures, the second layer is in contact with and sandwiched between the first and third layers and the first layer is selectively doped to provide one or more doped regions in the layer.

    Abstract translation: 提供掺杂和应变的半导体三层结构。 还提供了机械灵活的晶体管，包括射频晶体管，结合三层结构和制造三层结构和晶体管的方法。 三层结构包括第一层单晶半导体材料，第二层单晶半导体材料和第三层单晶半导体材料。 在结构中，第二层与第一和第三层接触并夹在第一和第三层之间，并且第一层被选择性地掺杂以在该层中提供一个或多个掺杂区域。

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