公开(公告)号：US07876440B2

公开(公告)日：2011-01-25

申请号：US12505311

申请日：2009-07-17

申请人： Walter D. Mieher ,  Ady Levy ,  Boris Golovanesky ,  Michael Friedmann ,  Ian Smith ,  Michael E. Adel ,  Anatoly Fabrikant

发明人： Walter D. Mieher ,  Ady Levy ,  Boris Golovanesky ,  Michael Friedmann ,  Ian Smith ,  Michael E. Adel ,  Anatoly Fabrikant

IPC分类号： G01B11/00

CPC分类号： G03F9/7088 ,  G01N21/956 ,  G01N2021/213 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7049 ,  G03F9/7084

摘要： Disclosed are apparatus and methods for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample. Targets A, B, C and D that each include a portion of the first and second structures are provided. The target A is designed to have an offset Xa between its first and second structures portions; the target B is designed to have an offset Xb between its first and second structures portions; the target C is designed to have an offset Xc between its first and second structures portions; and the target D is designed to have an offset Xd between its first and second structures portions. Each of the offsets Xa, Xb, Xc and Xd is different from zero, and Xa is an opposite sign and differ from Xb.

摘要翻译： 公开了用于确定样品的第一层中的多个第一结构与样品的第二层中的多个第二结构之间的叠层的装置和方法。 提供了各自包括第一和第二结构的一部分的目标A，B，C和D。 目标A设计成在其第一和第二结构部分之间具有偏移Xa; 目标B被设计成在其第一和第二结构部分之间具有偏移Xb; 目标C被设计成在其第一和第二结构部分之间具有偏移Xc; 并且目标D被设计成在其第一和第二结构部分之间具有偏移Xd。 偏移量Xa，Xb，Xc和Xd中的每一个与零不同，并且Xa是相反的符号，并且与Xb不同。

公开(公告)号：US20090284744A1

公开(公告)日：2009-11-19

申请号：US12505311

申请日：2009-07-17

申请人： Walter D. Mieher ,  Ady Levy ,  Boris Golovanesky ,  Michael Friedmann ,  Ian Smith ,  Michael E. Adel ,  Anatoly Fabrikant

发明人： Walter D. Mieher ,  Ady Levy ,  Boris Golovanesky ,  Michael Friedmann ,  Ian Smith ,  Michael E. Adel ,  Anatoly Fabrikant

IPC分类号： G01B11/00

CPC分类号： G03F9/7088 ,  G01N21/956 ,  G01N2021/213 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7049 ,  G03F9/7084

摘要： Disclosed are apparatus and methods for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample. Targets A, B, C and D that each include a portion of the first and second structures are provided. The target A is designed to have an offset Xa between its first and second structures portions; the target B is designed to have an offset Xb between its first and second structures portions; the target C is designed to have an offset Xc between its first and second structures portions; and the target D is designed to have an offset Xd between its first and second structures portions. Each of the offsets Xa, Xb, Xc and Xd is different from zero, and Xa is an opposite sign and differ from Xb. Offset Xc is an opposite sign and differs from Xd. The offsets Xa, Xb, Xc and Xd are selected so that an overlay error, including the respective offset, is within a linear region of overlay values. The targets A, B, C and D are illuminated with electromagnetic radiation to obtain spectra SA, SB, SC, and SD from targets A, B, C, and D, respectively, and any overlay error between the first structures and the second structures is determined using a linear or phase based scatterometry technique based on the obtained spectra SA, SB, SC, and SD.

摘要翻译： 公开了用于确定样品的第一层中的多个第一结构与样品的第二层中的多个第二结构之间的叠层的装置和方法。 提供了各自包括第一和第二结构的一部分的目标A，B，C和D。 目标A设计成在其第一和第二结构部分之间具有偏移Xa; 目标B被设计成在其第一和第二结构部分之间具有偏移Xb; 目标C被设计成在其第一和第二结构部分之间具有偏移Xc; 并且目标D被设计成在其第一和第二结构部分之间具有偏移Xd。 偏移量Xa，Xb，Xc和Xd中的每一个与零不同，并且Xa是相反的符号，并且与Xb不同。 偏移Xc是相反的符号，不同于Xd。 选择偏移Xa，Xb，Xc和Xd，使得包括相应偏移的重叠误差在叠加值的线性区域内。 目标A，B，C和D被电磁辐射照射，分别从目标A，B，C和D获得光谱SA，SB，SC和SD，第一结构和第二结构之间的任何重叠误差 使用基于获得的光谱SA，SB，SC和SD的基于线性或相位的散射测量技术来确定。

公开(公告)号：US07289213B2

公开(公告)日：2007-10-30

申请号：US10785732

申请日：2004-02-23

申请人： Walter D. Mieher ,  Ady Levy ,  Boris Golovanesky ,  Michael Friedmann ,  Ian Smith ,  Michael E. Adel ,  Anatoly Fabrikant

发明人： Walter D. Mieher ,  Ady Levy ,  Boris Golovanesky ,  Michael Friedmann ,  Ian Smith ,  Michael E. Adel ,  Anatoly Fabrikant

IPC分类号： G01B11/00 ,  G01B11/24 ,  G01B11/30 ,  G01B11/14 ,  H01L21/76 ,  H01L23/544

CPC分类号： G03F9/7088 ,  G01N21/956 ,  G01N2021/213 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7049 ,  G03F9/7084

摘要： Disclose is a combined scatterometry mark comprising a scatterometry critical dimension (CD) or profile target capable of being measured to determine CD or profile information and a scatterometry overlay target disposed over the scatterometry CD or profile target, the scatterometry overlay target cooperating with the scatterometry CD or profile target to form a scatterometry mark capable of being measured to determine overlay.

摘要翻译： Disclose是一个组合的散点图标记，包括能够被测量以确定CD或轮廓信息的散射关键维度（CD）或轮廓目标，以及布置在散射测量CD或轮廓目标上的散射测绘覆盖目标，散射测绘覆盖目标与散射光谱CD协调 或轮廓目标以形成能够被测量以确定覆盖的散射测量标记。

公开(公告)号：US20080024766A1

公开(公告)日：2008-01-31

申请号：US11830798

申请日：2007-07-30

申请人： Walter Mieher ,  Ady Levy ,  Boris Golovanesky ,  Michael Friedmann ,  Ian Smith ,  Michael Adel ,  Anatoly Fabrikant ,  Christopher Bevis ,  Mark Ghinovker

发明人： Walter Mieher ,  Ady Levy ,  Boris Golovanesky ,  Michael Friedmann ,  Ian Smith ,  Michael Adel ,  Anatoly Fabrikant ,  Christopher Bevis ,  Mark Ghinovker

IPC分类号： G01N21/00

CPC分类号： G03F9/7088 ,  G01N21/956 ,  G01N2021/213 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7049 ,  G03F9/7084

摘要： Disclosed is a method for determining an overlay error between at least two layers in a multiple layer sample. An imaging optical system is used to measure a plurality of measured optical signals from a plurality of periodic targets on the sample. The targets each have a first structure in a first layer and a second structure in a second layer. There are predefined offsets between the first and second structures. A scatterometry overlay technique is then used to analyze the measured optical signals of the periodic targets and the predefined offsets of the first and second structures of the periodic targets to thereby determine an overlay error between the first and second structures of the periodic targets.

摘要翻译： 公开了一种用于确定多层样品中至少两层之间的覆盖误差的方法。 成像光学系统用于从样本上的多个周期性目标测量多个测量的光信号。 目标各自具有第一层中的第一结构和第二层中的第二结构。 在第一和第二结构之间有预定义的偏移。 然后使用散射测量覆盖技术来分析周期性目标的测量光信号和周期性目标的第一和第二结构的预定偏移量，从而确定周期性目标的第一和第二结构之间的重叠误差。

公开(公告)号：US20080049226A1

公开(公告)日：2008-02-28

申请号：US11926603

申请日：2007-10-29

申请人： Walter Mieher ,  Ady Levy ,  Boris Golovanesky ,  Michael Friedmann ,  Ian Smith ,  Michael Adel ,  Anatoly Fabrikant

发明人： Walter Mieher ,  Ady Levy ,  Boris Golovanesky ,  Michael Friedmann ,  Ian Smith ,  Michael Adel ,  Anatoly Fabrikant

IPC分类号： G01B11/00

CPC分类号： G03F9/7088 ,  G01N21/956 ,  G01N2021/213 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7049 ,  G03F9/7084

摘要： Disclose is a combined scatterometry mark comprising a scatterometry critical dimension (CD) or profile target capable of being measured to determine CD or profile information and a scatterometry overlay target disposed over the scatterometry CD or profile target, the scatterometry overlay target cooperating with the scatterometry CD or profile target to form a scatterometry mark capable of being measured to determine overlay.

摘要翻译： Disclose是一个组合的散点图标记，包括能够被测量以确定CD或轮廓信息的散射关键维度（CD）或轮廓目标，以及布置在散射测量CD或轮廓目标上的散射测绘覆盖目标，散射测绘覆盖目标与散射光谱CD协调 或轮廓目标以形成能够被测量以确定覆盖的散射测量标记。

公开(公告)号：US20090135416A1

公开(公告)日：2009-05-28

申请号：US11868740

申请日：2007-10-08

申请人： Andrei V. Shchegrov ,  Anatoly Fabrikant ,  Mehrdad Nikoonahad ,  Ady Levy ,  Daniel C. Wack ,  Noah Bareket ,  Walter Mieher ,  Ted Dziura

发明人： Andrei V. Shchegrov ,  Anatoly Fabrikant ,  Mehrdad Nikoonahad ,  Ady Levy ,  Daniel C. Wack ,  Noah Bareket ,  Walter Mieher ,  Ted Dziura

IPC分类号： G01B11/28 ,  G01J3/00 ,  G01B11/00

CPC分类号： G03F7/70616 ,  G01N21/211 ,  G01N21/47 ,  G01N21/4788 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95607 ,  G01N2021/213 ,  G03F7/70625 ,  G03F7/70641

摘要： A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.

摘要翻译： 构建种子轮廓的画廊，并且使用半导体器件的制造工艺知识来选择与轮廓相关联的初始参数值。 也可以使用制造过程知识来选择最佳种子轮廓和最佳初始参数值集合作为优化过程的起始点，由此将与模型预测的轮廓的参数值相关联的数据与测量数据进行比较，以便 达到参数的值。 也可以考虑在周期性结构之上或之下的膜层。 可以使用诸如反射率Rs，Rp和椭偏参数的不同辐射参数来测量衍射结构和相关膜。 一些辐射参数可能对轮廓或膜的参数值的变化对其他辐射参数更敏感。 可以在上述优化过程中选择对这种变化更敏感的一个或多个辐射参数，以获得更准确的测量。 可以将上述技术提供给轨道/步进器和蚀刻器以控制光刻和蚀刻工艺，以便补偿轮廓参数中的任何误差。

公开(公告)号：US07826071B2

公开(公告)日：2010-11-02

申请号：US11868740

申请日：2007-10-08

申请人： Andrei V. Shchegrov ,  Anatoly Fabrikant ,  Mehrdad Nikoonahad ,  Ady Levy ,  Daniel C. Wack ,  Noah Bareket ,  Walter Mieher ,  Ted Dziura

发明人： Andrei V. Shchegrov ,  Anatoly Fabrikant ,  Mehrdad Nikoonahad ,  Ady Levy ,  Daniel C. Wack ,  Noah Bareket ,  Walter Mieher ,  Ted Dziura

IPC分类号： G01B11/14

CPC分类号： G03F7/70616 ,  G01N21/211 ,  G01N21/47 ,  G01N21/4788 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95607 ,  G01N2021/213 ,  G03F7/70625 ,  G03F7/70641

摘要： A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.

摘要翻译： 构建种子轮廓的画廊，并且使用半导体器件的制造工艺知识来选择与轮廓相关联的初始参数值。 也可以使用制造过程知识来选择最佳种子轮廓和最佳初始参数值集合作为优化过程的起始点，由此将与模型预测的轮廓的参数值相关联的数据与测量数据进行比较，以便 达到参数的值。 也可以考虑在周期性结构之上或之下的膜层。 可以使用诸如反射率Rs，Rp和椭偏参数的不同辐射参数来测量衍射结构和相关膜。 一些辐射参数可能对轮廓或膜的参数值的变化对其他辐射参数更敏感。 可以在上述优化过程中选择对这种变化更敏感的一个或多个辐射参数，以获得更准确的测量。 可以将上述技术提供给轨道/步进器和蚀刻器以控制光刻和蚀刻工艺，以便补偿轮廓参数中的任何误差。

公开(公告)号：US07280230B2

公开(公告)日：2007-10-09

申请号：US10327466

申请日：2002-12-19

申请人： Andrei V. Shchegrov ,  Anatoly Fabrikant ,  Mehrdad Nikoonahad ,  Ady Levy ,  Daniel C. Wack ,  Noah Bareket ,  Walter Mieher ,  Ted Dziura

发明人： Andrei V. Shchegrov ,  Anatoly Fabrikant ,  Mehrdad Nikoonahad ,  Ady Levy ,  Daniel C. Wack ,  Noah Bareket ,  Walter Mieher ,  Ted Dziura

IPC分类号： G01B11/28

CPC分类号： G03F7/70616 ,  G01N21/211 ,  G01N21/47 ,  G01N21/4788 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95607 ,  G01N2021/213 ,  G03F7/70625 ,  G03F7/70641

摘要： A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.

摘要翻译： 构建种子轮廓的画廊，并且使用半导体器件的制造工艺知识来选择与轮廓相关联的初始参数值。 也可以使用制造过程知识来选择最佳种子轮廓和最佳初始参数值集合作为优化过程的起始点，由此将与模型预测的轮廓的参数值相关联的数据与测量数据进行比较，以便 达到参数的值。 也可以考虑在周期性结构之上或之下的膜层。 不同的辐射参数，例如反射率R S，R P和椭偏参数可用于测量衍射结构和相关膜。 一些辐射参数可能对轮廓或膜的参数值的变化对其他辐射参数更敏感。 可以在上述优化过程中选择对这种变化更敏感的一个或多个辐射参数，以获得更准确的测量。 可以将上述技术提供给轨道/步进器和蚀刻器以控制光刻和蚀刻工艺，以便补偿轮廓参数中的任何误差。

公开(公告)号：US08978660B2

公开(公告)日：2015-03-17

申请号：US13188323

申请日：2011-07-21

申请人： Dimitri Chernyak ,  Anatoly Fabrikant

发明人： Dimitri Chernyak ,  Anatoly Fabrikant

IPC分类号： A61B19/00 ,  A61F9/008

CPC分类号： A61F9/008 ,  A61F9/00804 ,  A61F2009/00844 ,  A61F2009/00846 ,  A61F2009/00848 ,  A61F2009/00872 ,  A61F2009/00882

摘要： Embodiments of the present invention provide methods and systems for determining an ablation treatment for an eye of a patient. The systems and method may involve determining an ellipsoid shape corresponding to an anterior corneal surface of the patient's eye. The ellipsoid shape may include an anterior portion, a major axis, and an apex, where the major axis intersects the anterior portion at the apex. The systems and method may also involve determining a tilted orientation of the eye, such as when the patient fixates on a target during a laser ablation procedure. The systems and method may further involve determining the ablation treatment based on the ellipsoid shape and/or the tilted orientation.

摘要翻译： 本发明的实施例提供了用于确定患者眼睛的消融治疗的方法和系统。 系统和方法可以涉及确定对应于患者眼睛的前角膜表面的椭圆形状。 椭圆形状可以包括前部，长轴和顶点，其中长轴在顶点与前部相交。 系统和方法还可以包括确定眼睛的倾斜取向，例如当患者在激光烧蚀过程期间固定在靶上时。 系统和方法还可以包括基于椭圆形状和/或倾斜取向来确定消融治疗。

公开(公告)号：US20060132806A1

公开(公告)日：2006-06-22

申请号：US11343478

申请日：2006-01-30

申请人： Andrei Shchegrov ,  Anatoly Fabrikant ,  Mehrdad Nikoonahad

发明人： Andrei Shchegrov ,  Anatoly Fabrikant ,  Mehrdad Nikoonahad

IPC分类号： G01B11/14

CPC分类号： H01L22/20 ,  G01J3/447 ,  G01J4/04 ,  G01N21/211

摘要： A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.

摘要翻译： 构建种子轮廓的画廊，并且使用半导体器件的制造工艺知识来选择与轮廓相关联的初始参数值。 也可以使用制造过程知识来选择最佳种子轮廓和最佳初始参数值集合作为优化过程的起始点，由此将与模型预测的轮廓的参数值相关联的数据与测量数据进行比较，以便 达到参数的值。 也可以考虑在周期性结构之上或之下的膜层。 不同的辐射参数，例如反射率R S，R P和椭偏参数可用于测量衍射结构和相关膜。 一些辐射参数可能对轮廓或膜的参数值的变化对其他辐射参数更敏感。 可以在上述优化过程中选择对这种变化更敏感的一个或多个辐射参数，以获得更准确的测量。 可以将上述技术提供给轨道/步进器和蚀刻器以控制光刻和蚀刻工艺，以便补偿轮廓参数中的任何误差。