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公开(公告)号：US5953128A
公开(公告)日：1999-09-14
申请号：US929341
申请日：1997-08-28
CPC分类号： G03F7/70558 , G03F7/70641
摘要： Focus and exposure parameters may be controlled in a lithographic process for manufacturing microelectronics by creating a complementary tone pattern of shapes and spaces in a resist film on a substrate. Corresponding dimensions of the resist shape and space are measured and the adequacy of focus or exposure dose are determined as a function of the measured dimensions. Etching parameters may also be controlled by creating a complementary tone pattern of etched shapes and spaces on a substrate. Corresponding dimensions of the etched shape and space are measured and the adequacy of etching parameters are determined as a function of the measured dimensions.
摘要翻译： 聚焦和曝光参数可以通过在基板上的抗蚀剂膜中产生形状和空间的互补色调图案来制造微电子学的光刻工艺中进行控制。 测量抗蚀剂形状和空间的相应尺寸，并根据所测量的尺寸确定聚焦或曝光剂量的适当性。 也可以通过在衬底上产生蚀刻形状和空间的互补色调图案来控制蚀刻参数。 测量蚀刻形状和空间的相应尺寸，并根据所测量的尺寸确定蚀刻参数的合适性。
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12.发明授权EMF correction model calibration using asymmetry factor data obtained from aerial images or a patterned layer 有权使用从空间图像或图案层获得的不对称因子数据进行EMF校正模型校准公开(公告)号：US08271910B2
公开(公告)日：2012-09-18
申请号：US12748513
申请日：2010-03-29
IPC分类号： G06F17/50
CPC分类号： G03F1/38 , G03F1/70 , G03F7/70283 , G03F7/70441
摘要： A computer-implemented method is provided for generating an electromagnetic field (EMF) correction boundary layer (BL) model corresponding to a mask, which can include using a computer to perform a method, in which asymmetry factor data is determined from aerial image measurements of a plurality of different gratings representative of features provided on a mask, wherein the aerial image measurements having been made at a plurality of different focus settings. The method may also include determining boundary layer (BL) model parameters of an EMF correction BL model corresponding to the mask by fitting to the asymmetry factor measurements. Alternatively, the asymmetry factor data can be determined from measurements of line widths of photoresist patterns, wherein the photoresist patterns correspond to images cast by a plurality of gratings at a plurality of different defocus distances, and the gratings can be representative of features of a mask.
摘要翻译： 提供了一种计算机实现的方法，用于产生对应于掩模的电磁场（EMF）校正边界层（BL）模型，其可以包括使用计算机执行一种方法，其中由不确定因素数据从空间图像测量 代表提供在掩模上的特征的多个不同光栅，其中已经在多个不同焦点设置进行了空间图像测量。 该方法还可以包括通过拟合不对称因子测量来确定对应于掩模的EMF校正BL模型的边界层（BL）模型参数。 或者，可以通过对光致抗蚀剂图案的线宽度的测量来确定不对称因子数据，其中光致抗蚀剂图案对应于由多个不同散焦距离处的多个光栅投射的图像，并且光栅可以代表掩模的特征 。
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13.发明授权System and method of predicting problematic areas for lithography in a circuit design 有权在电路设计中预测光刻问题区域的系统和方法公开(公告)号：US08239789B2
公开(公告)日：2012-08-07
申请号：US13080148
申请日：2011-04-05
CPC分类号： G06F17/5045 , G03F1/144 , G03F1/36 , G03F1/70 , G03F7/705
摘要： A system and method is provided which predicts problematic areas for lithography in a circuit design, and more specifically, which uses modeling data from a modeling tool to accurately predict problematic lithographic areas. The method includes identifying surface heights of plurality of tiles of a modeled wafer, and mathematically mimicking a lithographic tool to determine best planes of focus for exposure for the plurality of tiles.
摘要翻译： 提供了一种系统和方法，其预测电路设计中的光刻的有问题的区域，更具体地，其使用来自建模工具的建模数据来准确地预测有问题的光刻区域。 该方法包括识别模拟晶片的多个瓦片的表面高度，以及数学上模拟光刻工具以确定用于多个瓦片的曝光的最佳焦点平面。
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14.发明授权公开(公告)号：US08238644B2
公开(公告)日：2012-08-07
申请号：US11378536
申请日：2006-03-17
申请人： Timothy A. Brunner , Gregg M. Gallatin , Ronald L. Gordon , Kafai Lai , Alan E. Rosenbluth , Nakgeuon Seong
发明人： Timothy A. Brunner , Gregg M. Gallatin , Ronald L. Gordon , Kafai Lai , Alan E. Rosenbluth , Nakgeuon Seong
IPC分类号： G06K9/00
CPC分类号： G03F7/70441 , G03F1/36 , G03F1/70 , G03F7/70575
摘要： A method for determining an image of a patterned object formed by a polychromatic lithographic projection system having a laser radiation source of a finite spectral bandwidth and a lens for imaging the patterned object to an image plane within a resist layer. The method comprises providing patterns for the object, a spectrum of the radiation source to be used in the lithographic projection system, an intensity and polarization distribution of the radiation source, and a lens impulse response in the spatial domain or in the spatial frequency domain of the image. The method then includes forming a polychromatic 4D bilinear vector kernel comprising a partially coherent polychromatic joint response between pairs of points in the spatial domain or in the spatial frequency domain, determining the dominant polychromatic 2D kernels of the polychromatic 4D bilinear vector kernel, and determining the image of the patterned object from convolutions of the object patterns with the dominant polychromatic 2D kernels.
摘要翻译： 一种用于确定由具有有限光谱带宽的激光辐射源的多色光刻投影系统形成的图案化物体的图像的方法和用于将图案化物体成像到抗蚀剂层内的图像平面的透镜。 该方法包括提供对象的图案，在光刻投影系统中使用的辐射源的光谱，辐射源的强度和偏振分布以及在空间域或空间频域中的透镜脉冲响应 图片。 该方法然后包括形成多色4D双线性矢量核，其包括在空间域或空间频域中的点对之间的部分相干多色联合响应，确定多色4D双线性向量核的显性多色2D内核，并确定 图形对象的图像与目标图案与显性多色2D内核的卷积。
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15.发明申请PHOTOLITHOGRAPHY FOCUS IMPROVEMENT BY REDUCTION OF AUTOFOCUS RADIATION TRANSMISSION INTO SUBSTRATE 有权通过减少自适应辐射传输到基板中的光刻技术改进公开(公告)号：US20110256486A1
公开(公告)日：2011-10-20
申请号：US13158901
申请日：2011-06-13
申请人： Timothy A. Brunner , Sean D. Burns , Kuang-Jung Chen , Wu-Song Huang , Kafai Lai , Wai-Kin Li , Bernhard R. Liegl
发明人： Timothy A. Brunner , Sean D. Burns , Kuang-Jung Chen , Wu-Song Huang , Kafai Lai , Wai-Kin Li , Bernhard R. Liegl
IPC分类号： G03F7/20
CPC分类号： G03F7/091 , G03F7/70216 , Y10S430/127
摘要： An anti-reflective coating material, a microelectronic structure that includes an anti-reflective coating layer formed from the anti-reflective coating material and a related method for exposing a resist layer located over a substrate while using the anti-reflective coating layer provide for attenuation of secondary reflected vertical alignment beam radiation when aligning the substrate including the resist layer located thereover. Such enhanced vertical alignment provides for improved dimensional integrity of a patterned resist layer formed from the resist layer, as well as additional target layers that may be fabricated while using the resist layer as a mask.
摘要翻译： 防反射涂层材料，包括由抗反射涂层材料形成的抗反射涂层的微电子结构和用于在使用抗反射涂层的同时使位于基板上的抗蚀剂层曝光的相关方法提供衰减 当对准包括位于其上的抗蚀剂层的衬底时，二次反射垂直取向束辐射。 这种增强的垂直对准提供了由抗蚀剂层形成的图案化抗蚀剂层的改进的尺寸完整性，以及可以在使用抗蚀剂层作为掩模时制造的附加目标层。
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16.发明授权Method of improving grating test pattern for lithography monitoring and controlling 失效光刻监测与控制光栅测试图案的改进方法公开(公告)号：US07455939B2
公开(公告)日：2008-11-25
申请号：US11461217
申请日：2006-07-31
IPC分类号： G03F9/00
CPC分类号： G03B27/00 , G03F1/44 , G03F7/70641
摘要： A method of making a process monitor grating pattern for use in a lithographic imaging system comprises determining minimum resolvable pitch of a plurality of spaced, adjacent line elements, and selecting a process monitor grating period that is an integer multiple M, greater than 1, of the minimum resolvable pitch. The method then includes designing a process monitor grating pattern having a plurality of adjacent sets of grouped line elements spaced from each other. Each set of grouped line elements is spaced from and parallel to an adjacent set of grouped line elements by the process monitor grating period, such that when the process monitor grating pattern is projected by the lithographic imaging system the line elements in each set are unresolvable from each other and Fourier coefficients of diffracted orders m created by the line elements in the range of 1
摘要翻译： 制造用于光刻成像系统的过程监视光栅图案的方法包括确定多个间隔相邻的线元素的最小可分辨间距，以及选择大于1的整数倍M，大于1的过程监视光栅周期 最小可分辨的音高。 该方法然后包括设计具有彼此间隔开的多个相邻组合的线组件的过程监视光栅图案。 每组分组的线元素通过过程监视光栅周期与相邻的一组分组线元素间隔开并平行，使得当过程监视光栅图案由光刻成像系统投影时，每组中的线元素不能从 在1 <| m |≤= M的范围内由线路元件产生的衍射阶数m的傅立叶系数为零。
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17.发明申请公开(公告)号：US20080182180A1
公开(公告)日：2008-07-31
申请号：US11669175
申请日：2007-01-31
CPC分类号： G03F1/62 , G03F7/11 , Y10T428/24
摘要： An optical pellicle to protect a photomask from particulate contamination during semiconductor lithography is provided which has enhanced transparency and operational characteristics. The pellicle utilizes alternating layers of a transparent polymer and a transparent inorganic layer to form pellicles which have high transmission properties and high strength. In a preferred pellicle, a three-layer pellicle is provided having a transparent inorganic layer sandwiched between two polymer layers. A five-layer pellicle is also provided with the outer layers and a middle layer being polymer layers and the inner layers an inorganic material. The preferred polymer layer is a perfluorinated polymer such as Teflon® and the preferred inorganic material is silicon dioxide. The pellicle of the invention provides light transmission of greater than 0.99% at incident light angles up to arcsine 0.45.
摘要翻译： 提供了在半导体光刻期间保护光掩模免受颗粒污染的光学防护薄膜，其具有增强的透明度和操作特性。 防护薄膜组件利用透明聚合物和透明无机层的交替层来形成具有高透射性和高强度的薄膜。 在优选的防护薄膜组件中，提供三层薄膜，其具有夹在两个聚合物层之间的透明无机层。 五层防护薄膜也设有外层，中间层是聚合物层，内层是无机材料。 优选的聚合物层是全氟化聚合物，例如Teflon，优选的无机材料是二氧化硅。 本发明的防护薄膜组件在入射光角直至反正弦0.45时提供大于0.99％的透光率。
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公开(公告)号：US06541166B2
公开(公告)日：2003-04-01
申请号：US09766005
申请日：2001-01-18
IPC分类号： G03F900
CPC分类号： G03F7/70433 , G03F1/70 , G03F7/70466 , H01J37/3026 , H01J2237/31761
摘要： The present invention relates generally to a method for lithographically printing a mask pattern on a substrate, in particular a semiconductor substrate, wherein the mask pattern includes features with diverse pitches. These features may include device features such as vias or contact holes and lines in integrated circuits. The method comprises splitting the mask pattern into a plurality of masks, wherein one or more of the masks contains relatively tightly nested features and one or more of the masks contains relatively isolated features. Each of the plurality of masks is then successively exposed on a photoresist layer on the substrate. For each exposure, the exposure conditions, photoresist layer, other thin films layers, etching process, mask writing process, and/or mask pattern bias may be optimized for the tightly nested feature pattern or isolated feature pattern.
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公开(公告)号：US6027842A
公开(公告)日：2000-02-22
申请号：US299477
申请日：1999-04-26
IPC分类号： G03F7/20 , G03F7/207 , H01L21/033 , G03F9/00
CPC分类号： G03F7/70558 , G03F7/70641 , H01L21/0334
摘要： Focus and exposure parameters may be controlled in a lithographic process for manufacturing microelectronics by creating a complementary tone pattern of shapes and spaces in a resist film on a substrate. Corresponding dimensions of the resist shape and space are measured and the adequacy of focus or exposure dose are determined as a function of the measured dimensions. Etching parameters may also be controlled by creating a complementary tone pattern of etched shapes and spaces on a substrate. Corresponding dimensions of the etched shape and space are measured and the adequacy of etching parameters are determined as a function of the measured dimensions.
摘要翻译： 聚焦和曝光参数可以通过在基板上的抗蚀剂膜中产生形状和空间的互补色调图案来制造微电子学的光刻工艺中进行控制。 测量抗蚀剂形状和空间的相应尺寸，并根据所测量的尺寸确定聚焦或曝光剂量的适当性。 也可以通过在衬底上产生蚀刻形状和空间的互补色调图案来控制蚀刻参数。 测量蚀刻形状和空间的相应尺寸，并根据所测量的尺寸确定蚀刻参数的合适性。
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20.发明授权Focus and overlay characterization and optimization for photolithographic exposure 失效用于光刻曝光的聚焦和覆盖表征和优化
公开(公告)号：US4929083A
公开(公告)日：1990-05-29
申请号：US326482
申请日：1989-03-20
申请人： Timothy A. Brunner
发明人： Timothy A. Brunner
CPC分类号： G03F7/70591 , G03F7/70633 , G03F7/70641 , G03F9/7026
摘要： The focus and overlay alignment of photolithographic exposure tools of the type wherein the location of the wafer is accurately tracked with respect to a baseline position, such as in step and repeat cameras, are evaluated by monitoring the output signal generated by a photodetector in response to the light radiated from one or more periodic test patterns carried by a re-useable calibration wafer while such a test pattern is being exposed to an aerial image of a matching calibration mask. Overlay alignment suitably is evaluated by stepping the pattern on the wafer from side-to-side and fore and aft of the aerial image while monitoring the photodetector for a peak output signal, whereby overlay alignment errors along the x-axis and y-axis of the exposure tool are determined by the displacement of the wafer positions at which such peak signals are detected from the positions at which such peak signals ae expected. Focus, on the other hand, suitably is evaluated by incrementally defocusing the imaging optics of the exposure tool while monitoring the rms width of the output signal generated by the photodetector as the wafer pattern is stepped through the aerial image of the calibration mask at each focal setting. The best focal setting minimizes the rms width of the output signal.
摘要翻译： 通过监视由光电检测器产生的输出信号，响应于以下步骤来评估其中晶片的位置相对于基线位置（例如步进和重复照相机）被准确跟踪的类型的光刻曝光工具的聚焦和重叠对准 当这种测试图案暴露于匹配的校准掩模的空间图像时，由可重复使用的校准晶片携带的一个或多个周期性测试图案辐射的光。 通过在监视光电检测器的峰值输出信号的同时，在空间图像的一侧到另一侧和前后移动晶片上的图案来评估叠加对准，从而沿x轴和y轴的叠加对准误差 曝光工具由从这些峰值信号ae所期望的位置检测出这些峰值信号的晶片位置的位移来确定。 另一方面，通过对曝光工具的成像光学元件进行逐渐散焦来评估焦点，同时监视由光电检测器产生的输出信号的均方根宽度，因为晶片图案在每个焦点处通过校准掩模的空中图像 设置。 最佳聚焦设置可最大限度地减小输出信号的均方根宽度。
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