公开(公告)号：US10378106B2

公开(公告)日：2019-08-13

申请号：US12618355

申请日：2009-11-13

申请人： Akiko Kobayashi ,  Akira Shimizu ,  Nobuyoshi Kobayashi ,  Woo-Jin Lee

发明人： Akiko Kobayashi ,  Akira Shimizu ,  Nobuyoshi Kobayashi ,  Woo-Jin Lee

IPC分类号： C23C16/32 ,  C23C16/34 ,  C23C16/40 ,  H01L21/02 ,  C23C16/455 ,  H05H1/24

摘要： A method of forming an insulation film by alternating multiple times, respectively, a process of adsorbing a precursor onto a substrate and a process of treating the adsorbed surface using reactant gas and a plasma, wherein a plasma is applied in the process of supplying the precursor.

公开(公告)号：US20100221925A1

公开(公告)日：2010-09-02

申请号：US12778808

申请日：2010-05-12

申请人： Woo Jin Lee ,  Akira Shimizu

发明人： Woo Jin Lee ,  Akira Shimizu

IPC分类号： H01L21/318

CPC分类号： C23C16/045 ,  C23C16/345 ,  C23C16/45523 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31604 ,  H01L21/3185

摘要： A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor as a first precursor and a hydrocarbon gas as a second precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film doped with carbon and having Si—N bonds on the substrate.

摘要翻译： 通过等离子体增强化学气相沉积（PECVD）在半导体衬底上形成具有Si-N键的保形电介质膜的方法包括：将含氮和氢的反应气体和稀有气体引入反应空间内， 底物放置; 向反应空间施加RF功率; 并将作为第一前体的含氢硅前体和作为第二前体的烃气体以脉冲方式引入反应空间中，其中等离子体被激发，由此形成掺杂有碳并在衬底上具有Si-N键的保形电介质膜 。

公开(公告)号：US20100184302A1

公开(公告)日：2010-07-22

申请号：US12357174

申请日：2009-01-21

申请人： Woo Jin LEE ,  Akira Shimizu ,  Atsuki Fukazawa

发明人： Woo Jin LEE ,  Akira Shimizu ,  Atsuki Fukazawa

IPC分类号： H01L21/469

CPC分类号： C23C16/345 ,  C23C16/045 ,  C23C16/45523 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3185

摘要： A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film having Si—N bonds on the substrate.

摘要翻译： 通过等离子体增强化学气相沉积（PECVD）在半导体衬底上形成具有Si-N键的共形电介质膜的方法包括：将含氮和氢的反应气体和添加气体引入反应空间内， 底物放置; 向反应空间施加RF功率; 并将含氢的硅前体以脉冲方式引入到等离子体被激发的反应空间中，从而在衬底上形成具有Si-N键的保形电介质膜。

公开(公告)号：US20100144162A1

公开(公告)日：2010-06-10

申请号：US12553759

申请日：2009-09-03

申请人： Woo Jin Lee ,  Akira Shimizu

发明人： Woo Jin Lee ,  Akira Shimizu

IPC分类号： H01L21/314

CPC分类号： H01L21/3185 ,  C23C16/345 ,  C23C16/45523 ,  C23C16/5096 ,  H01L21/31111

摘要： A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film having Si—N bonds on the substrate.

摘要翻译： 通过等离子体增强化学气相沉积（PECVD）在半导体衬底上形成具有Si-N键的共形电介质膜的方法包括：将含氮和氢的反应气体和添加气体引入反应空间内， 底物放置; 向反应空间施加RF功率; 并将含氢的硅前体以脉冲方式引入到等离子体被激发的反应空间中，从而在衬底上形成具有Si-N键的保形电介质膜。

公开(公告)号：US20100124621A1

公开(公告)日：2010-05-20

申请号：US12618355

申请日：2009-11-13

申请人： Akiko Kobayashi ,  Akira Shimizu ,  Nobuyoshi Kobayashi ,  Woo-Jin Lee

发明人： Akiko Kobayashi ,  Akira Shimizu ,  Nobuyoshi Kobayashi ,  Woo-Jin Lee

IPC分类号： C23C16/48

CPC分类号： C23C16/402 ,  C23C16/325 ,  C23C16/345 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228

摘要： A method of forming an insulation film by alternating multiple times, respectively, a process of adsorbing a precursor onto a substrate and a process of treating the adsorbed surface using reactant gas and a plasma, wherein a plasma is applied in the process of supplying the precursor.

摘要翻译： 一种通过交替多次交替形成绝缘膜的方法，将前体吸附到基底上的方法和使用反应气体和等离子体处理吸附表面的方法，其中在提供前体的过程中施加等离子体 。

公开(公告)号：US07972980B2

公开(公告)日：2011-07-05

申请号：US12778808

申请日：2010-05-12

申请人： Woo Jin Lee ,  Akira Shimizu

发明人： Woo Jin Lee ,  Akira Shimizu

IPC分类号： H01L21/469

CPC分类号： C23C16/045 ,  C23C16/345 ,  C23C16/45523 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31604 ,  H01L21/3185

摘要： A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor as a first precursor and a hydrocarbon gas as a second precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film doped with carbon and having Si—N bonds on the substrate.

摘要翻译： 通过等离子体增强化学气相沉积（PECVD）在半导体衬底上形成具有Si-N键的保形电介质膜的方法包括：将含氮和氢的反应气体和稀有气体引入反应空间内， 底物放置; 向反应空间施加RF功率; 并将作为第一前体的含氢硅前体和作为第二前体的烃气体以脉冲方式引入反应空间中，其中等离子体被激发，由此形成掺杂有碳并在衬底上具有Si-N键的保形电介质膜 。

公开(公告)号：US07919416B2

公开(公告)日：2011-04-05

申请号：US12357174

申请日：2009-01-21

申请人： Woo-Jin Lee ,  Akira Shimizu ,  Atsuki Fukazawa

发明人： Woo-Jin Lee ,  Akira Shimizu ,  Atsuki Fukazawa

IPC分类号： H01L21/337

CPC分类号： C23C16/345 ,  C23C16/045 ,  C23C16/45523 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3185

摘要： A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film having Si—N bonds on the substrate.

摘要翻译： 通过等离子体增强化学气相沉积（PECVD）在半导体衬底上形成具有Si-N键的共形电介质膜的方法包括：将含氮和氢的反应气体和添加气体引入反应空间内， 底物放置; 向反应空间施加RF功率; 并将含氢的硅前体以脉冲方式引入到等离子体被激发的反应空间中，从而在衬底上形成具有Si-N键的保形电介质膜。

公开(公告)号：US08142862B2

公开(公告)日：2012-03-27

申请号：US12553759

申请日：2009-09-03

申请人： Woo Jin Lee ,  Akira Shimizu

发明人： Woo Jin Lee ,  Akira Shimizu

IPC分类号： C23C8/00 ,  C23C16/00 ,  H05H1/24

CPC分类号： H01L21/3185 ,  C23C16/345 ,  C23C16/45523 ,  C23C16/5096 ,  H01L21/31111

摘要： A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film having Si—N bonds on the substrate.

摘要翻译： 通过等离子体增强化学气相沉积（PECVD）在半导体衬底上形成具有Si-N键的共形电介质膜的方法包括：将含氮和氢的反应气体和添加气体引入反应空间内， 底物放置; 向反应空间施加RF功率; 并将含氢的硅前体以脉冲方式引入到等离子体被激发的反应空间中，从而在衬底上形成具有Si-N键的保形电介质膜。

公开(公告)号：US09109276B2

公开(公告)日：2015-08-18

申请号：US12885026

申请日：2010-09-17

申请人： Koichi Kanai ,  Kiyokazu Sugiyama ,  Eiji Shiotani ,  Kimio Nishimura ,  Junichi Uchiyama ,  Kiyohisa Suzuki ,  Jun Inomata ,  Daisuke Terada ,  Akira Shimizu ,  Hidenobu Matsuyama ,  Kiyoshi Hasegawa ,  Takashi Iiya

发明人： Koichi Kanai ,  Kiyokazu Sugiyama ,  Eiji Shiotani ,  Kimio Nishimura ,  Junichi Uchiyama ,  Kiyohisa Suzuki ,  Jun Inomata ,  Daisuke Terada ,  Akira Shimizu ,  Hidenobu Matsuyama ,  Kiyoshi Hasegawa ,  Takashi Iiya

IPC分类号： C23C4/18 ,  C23C4/12 ,  C23C4/16 ,  F02F1/00 ,  B05B7/22 ,  B05B13/06

CPC分类号： C23C4/124 ,  B05B7/224 ,  B05B13/0636 ,  C23C4/12 ,  C23C4/129 ,  C23C4/16 ,  C23C4/18 ,  F02F1/00 ,  F05C2253/12 ,  Y10T29/49272 ,  Y10T428/13

摘要： A cylindrical internal surface processing method comprises forming a cylinder bore, roughening an upper section of the bore, depositing coating onto the bore, and machining a lower section of the bore and the coating. The forming of the cylinder bore includes forming the upper and lower sections with the lower section being axially spaced from the upper section and having an axial length greater than zero. The roughening creates a roughened surface such that a radially innermost edge of the roughened surface has an internal diameter smaller than an internal diameter of the lower section. The coating is deposited to cover the upper section and at least a portion of the lower section. The machining forms a tapered portion and a cylindrical portion, a radially outermost edge of the cylindrical portion having an internal diameter larger than that of a radially outermost edge of the roughened surface.

摘要翻译： 圆柱形内表面处理方法包括形成气缸孔，使孔的上部部分粗糙化，在孔上沉积涂层，以及加工孔的下部和涂层。 缸孔的形成包括形成上部和下部，其中下部与上部轴向间隔开并具有大于零的轴向长度。 粗糙化产生粗糙表面，使得粗糙表面的径向最内边缘具有小于下部内径的内径。 沉积涂层以覆盖上部和下部的至少一部分。 加工形成锥形部分和圆柱形部分，圆柱形部分的径向最外边缘的内径大于粗糙表面的径向最外边缘的内径。

公开(公告)号：US20150169591A1

公开(公告)日：2015-06-18

申请号：US14402878

申请日：2012-05-24

申请人： Michiko Yoshida ,  Akira Shimizu ,  Seisuke Tokuda ,  Kazuhiko Mogi ,  Shinji Fujiwara ,  Nobuo Kawamura ,  Masaru Kitsuregawa ,  Kazuo Goda

发明人： Michiko Yoshida ,  Akira Shimizu ,  Seisuke Tokuda ,  Kazuhiko Mogi ,  Shinji Fujiwara ,  Nobuo Kawamura ,  Masaru Kitsuregawa ,  Kazuo Goda

IPC分类号： G06F17/30

CPC分类号： G06F16/252 ,  G06F16/24532 ,  G06F16/2455 ,  G06F16/24569

摘要： A database management system (DBMS) manages a database existing in a second storage device with an access speed lower than that of a first storage device. In an execution of a query, the DBMS dynamically generates tasks two or more executable tasks in parallel. The DBMS generates task start information which is information representing a content of the execution of the task, manages the task start information, and executes a content represented by the task start information by the task. The task start information includes a data address set existing in the second storage device. The DBMS controls movement of the data address sets between the first storage device and the second storage device based on a management state of the task start information. In addition, the DBMS selects the task start information based on whether or not the data address set exists in the first storage device.

摘要翻译： 数据库管理系统（DBMS）以比第一存储设备低的访问速度来管理第二存储设备中存在的数据库。 在执行查询时，DBMS并行动态生成任务两个或多个可执行任务。 DBMS生成作为任务执行内容的信息的任务开始信息，管理该任务开始信息，并执行任务开始信息所表示的内容。 任务开始信息包括存在于第二存储装置中的数据地址集。 DBMS基于任务开始信息的管理状态，控制第一存储装置与第二存储装置之间的数据地址集的移动。 另外，DBMS根据第一存储装置中是否存在数据地址组来选择任务开始信息。