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    Method of Forming Conformal Film Having Si-N Bonds on High-Aspect Ratio Pattern
    3.
    发明申请
    Method of Forming Conformal Film Having Si-N Bonds on High-Aspect Ratio Pattern 有权
    在高比例图案上形成具有Si-N键的保形膜的方法

    公开(公告)号：US20120058282A1

    公开(公告)日：2012-03-08

    申请号：US12875889

    申请日：2010-09-03

    申请人： Kuo-wei Hong ,  Akira Shimizu ,  Kunitoshi Namba ,  Woo-Jin Lee

    发明人： Kuo-wei Hong ,  Akira Shimizu ,  Kunitoshi Namba ,  Woo-Jin Lee

    IPC分类号： C23C16/505 ,  C23C16/34

    CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/345 ,  C23C16/36 ,  C23C16/5096 ,  C23C16/515 ,  H01L21/02167 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228

    摘要： A method of forming a conformal dielectric film having Si—N bonds on a substrate having a patterned surface includes: introducing a reactant gas into a reaction space; introducing a silicon precursor in pulses of less than 5-second duration into the reaction space; applying a first RF power to the reaction space during the pulse of the silicon precursor; applying a second RF power to the reaction space during the interval of the silicon precursor pulse, wherein an average intensity of the second RF power during the interval of the silicon precursor pulse is greater than that of the first RF power during the pulse of the silicon precursor; and repeating the cycle to form a conformal dielectric film having Si—N bonds with a desired thickness on the patterned surface of the substrate.

    摘要翻译： 在具有图案化表面的基板上形成具有Si-N键的保形电介质膜的方法包括：将反应气体引入反应空间; 将具有小于5秒持续时间脉冲的硅前体引入反应空间中; 在硅前驱体的脉冲期间将第一RF功率施加到反应空间; 在所述硅前体脉冲的间隔期间将第二RF功率施加到所述反应空间，其中在硅前体脉冲的间隔期间的所述第二RF功率的平均强度大于所述硅脉冲期间的所述第一RF功率的平均强度 前体 并重复该循环以在衬底的图案化表面上形成具有期望厚度的具有Si-N键的保形电介质膜。

    Method of forming conformal dielectric film having Si-N bonds by PECVD
    4.
    发明授权
    Method of forming conformal dielectric film having Si-N bonds by PECVD 有权
    通过PECVD形成具有Si-N键的保形电介质膜的方法

    公开(公告)号：US07919416B2

    公开(公告)日：2011-04-05

    申请号：US12357174

    申请日：2009-01-21

    申请人： Woo-Jin Lee ,  Akira Shimizu ,  Atsuki Fukazawa

    发明人： Woo-Jin Lee ,  Akira Shimizu ,  Atsuki Fukazawa

    IPC分类号： H01L21/337

    CPC分类号： C23C16/345 ,  C23C16/045 ,  C23C16/45523 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3185

    摘要： A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film having Si—N bonds on the substrate.

    摘要翻译： 通过等离子体增强化学气相沉积（PECVD）在半导体衬底上形成具有Si-N键的共形电介质膜的方法包括：将含氮和氢的反应气体和添加气体引入反应空间内， 底物放置; 向反应空间施加RF功率; 并将含氢的硅前体以脉冲方式引入到等离子体被激发的反应空间中，从而在衬底上形成具有Si-N键的保形电介质膜。

    Method of forming conformal film having si-N bonds on high-aspect ratio pattern
    5.
    发明授权
    Method of forming conformal film having si-N bonds on high-aspect ratio pattern 有权
    在高纵横比图案上形成具有si-N键的保形膜的方法

    公开(公告)号：US08394466B2

    公开(公告)日：2013-03-12

    申请号：US12875889

    申请日：2010-09-03

    申请人： Kuo-wei Hong ,  Akira Shimizu ,  Kunitoshi Namba ,  Woo-Jin Lee

    发明人： Kuo-wei Hong ,  Akira Shimizu ,  Kunitoshi Namba ,  Woo-Jin Lee

    IPC分类号： H05H1/24

    CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/345 ,  C23C16/36 ,  C23C16/5096 ,  C23C16/515 ,  H01L21/02167 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228

    摘要： A method of forming a conformal dielectric film having Si—N bonds on a substrate having a patterned surface includes: introducing a reactant gas into a reaction space; introducing a silicon precursor in pulses of less than 5-second duration into the reaction space; applying a first RF power to the reaction space during the pulse of the silicon precursor; applying a second RF power to the reaction space during the interval of the silicon precursor pulse, wherein an average intensity of the second RF power during the interval of the silicon precursor pulse is greater than that of the first RF power during the pulse of the silicon precursor; and repeating the cycle to form a conformal dielectric film having Si—N bonds with a desired thickness on the patterned surface of the substrate.

    摘要翻译： 在具有图案化表面的基板上形成具有Si-N键的保形电介质膜的方法包括：将反应气体引入反应空间; 将具有小于5秒持续时间脉冲的硅前体引入反应空间中; 在硅前驱体的脉冲期间将第一RF功率施加到反应空间; 在所述硅前体脉冲的间隔期间将第二RF功率施加到所述反应空间，其中在硅前体脉冲的间隔期间的所述第二RF功率的平均强度大于所述硅脉冲期间的所述第一RF功率的平均强度 前体 并重复该循环以在衬底的图案化表面上形成具有期望厚度的具有Si-N键的保形电介质膜。

    METHOD OF DEPOSITING DIELECTRIC FILM BY MODIFIED PEALD METHOD
    6.
    发明申请
    METHOD OF DEPOSITING DIELECTRIC FILM BY MODIFIED PEALD METHOD 有权
    通过改性PEALD方法沉积介质膜的方法

    公开(公告)号：US20120220139A1

    公开(公告)日：2012-08-30

    申请号：US13410970

    申请日：2012-03-02

    申请人： Woo-Jin Lee ,  Kuo-wei Hong ,  Akira Shimizu ,  Deakyun Jeong

    发明人： Woo-Jin Lee ,  Kuo-wei Hong ,  Akira Shimizu ,  Deakyun Jeong

    IPC分类号： H01L21/31

    CPC分类号： C23C16/345 ,  C23C16/4554 ,  C23C16/5096 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31111

    摘要： A method of forming a film on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a precursor in pulses of less than 1.0-second duration into the reaction space wherein the reactive gas and the rare gas are introduced; exiting a plasma in pulses of less than 1.0-second duration immediately after the precursor is shut off; and maintaining the reactive gas and the rare gas as a purge of less than 2.0-second duration.

    摘要翻译： 通过等离子体增强原子层沉积（PEALD）在半导体衬底上形成膜的方法包括：将含氮和氢的反应气体和稀有气体引入到其中放置半导体衬底的反应空间中; 将引入小于1.0秒持续时间脉冲的前体引入反应气体和稀有气体的反应空间; 在前体关闭之后立即以小于1.0秒持续时间的脉冲离开等离子体; 并且将反应气体和稀有气体保持为小于2.0秒持续时间的吹扫。

    Mobile terminal
    8.
    发明授权
    Mobile terminal 有权
    移动终端

    公开(公告)号：US08095180B2

    公开(公告)日：2012-01-10

    申请号：US12422924

    申请日：2009-04-13

    申请人： Woo-Jin Lee ,  Kyoung-Taek Lim ,  Byung-Duck Park ,  Sang-Chul Jeon

    发明人： Woo-Jin Lee ,  Kyoung-Taek Lim ,  Byung-Duck Park ,  Sang-Chul Jeon

    IPC分类号： H04M1/00

    CPC分类号： H04M1/22 ,  H04M1/0237 ,  H04M2250/22 ,  H04M2250/52

    摘要： A mobile terminal includes a housing comprising a light emitting portion disposed on at least a portion of the housing, a light emitting unit disposed inside the housing, a light transmission member configured to transmit light emitted from the light emitting unit, and a guiding structure formed on the light transmission member and configured to direct and emit the light toward the light emitting portion.

    摘要翻译： 移动终端包括壳体，其包括设置在壳体的至少一部分上的发光部分，设置在壳体内部的发光单元，被配置为透射从发光单元发射的光的光传输部件和形成的引导结构 在所述光传输部件上并且被配置为朝向所述发光部分引导和发射所述光。

    Method for managing schedule in mobile communication terminal
    9.
    发明授权
    Method for managing schedule in mobile communication terminal 有权
    移动通信终端管理时间表的方法

    公开(公告)号：US07751851B2

    公开(公告)日：2010-07-06

    申请号：US10287197

    申请日：2002-11-04

    申请人： Woo-Jin Lee ,  Yong-Nam Kim

    发明人： Woo-Jin Lee ,  Yong-Nam Kim

    IPC分类号： H04M1/00

    CPC分类号： H04M1/72566 ,  H04M1/274575

    摘要： A method for managing a schedule as a supplementary function of a mobile communication terminal. The method is capable of efficiently managing schedule information such as anniversaries to be repeated every year. Further, the method is capable of conveniently making contact with another party by providing telephone numbers of the other party at the same time when the schedule information is provided to a user.

    摘要翻译： 一种用于管理时间表作为移动通信终端的补充功能的方法。 该方法能够有效地管理每年要重复的周年纪念日程信息。 此外，该方法能够通过在将调度信息提供给用户的同时提供对方的电话号码来方便地与另一方进行联系。

    Semiconductor memory device and method of inputting/outputting data
    10.
    发明申请
    Semiconductor memory device and method of inputting/outputting data 有权
    半导体存储器件及其输入/输出方法

    公开(公告)号：US20080056018A1

    公开(公告)日：2008-03-06

    申请号：US11896722

    申请日：2007-09-05

    申请人： Joung-Yeal Kim ,  Jeong-Don Lim ,  Sung-Hoon Kim ,  Woo-Jin Lee

    发明人： Joung-Yeal Kim ,  Jeong-Don Lim ,  Sung-Hoon Kim ,  Woo-Jin Lee

    IPC分类号： G11C7/10

    CPC分类号： G11C7/1006 ,  G11C7/1051 ,  G11C7/106 ,  G11C7/1069 ,  G11C7/1078 ,  G11C7/1087 ,  G11C7/1096 ,  G11C2207/107

    摘要： According to an example embodiment, a semiconductor memory device may include a memory core, input circuit, and/or an output circuit. The input circuit may be configured to generate second data from first data using latch circuits operating in response to input control signals enabled during different periods. The input circuit may be further configured to provide the second data to the memory core. The second data may have 2N times the number of bits of the first data, where N is a positive integer. The output circuit may be configured to generate fourth data from third data using latch circuits operating in response to output control signals enabled during different periods. The output circuit may be further configured to provide the fourth data to data output pins. The fourth data may have ½N times the number of bits of the third data. A method of inputting/outputting data is also provided.

    摘要翻译： 根据示例实施例，半导体存储器件可以包括存储器芯，输入电路和/或输出电路。 输入电路可以被配置为使用响应于在不同周期期间启用的输入控制信号而工作的锁存电路从第一数据产生第二数据。 输入电路还可以被配置为向存储器核提供第二数据。 第二数据可以具有2N次第一数据的比特数，其中N是正整数。 输出电路可以被配置为使用响应于在不同周期期间启用的输出控制信号而工作的锁存电路从第三数据生成第四数据。 输出电路还可以被配置为向数据输出引脚提供第四数据。 第四数据可以具有第三数据的比特数的1/2N倍。 还提供了一种输入/输出数据的方法。