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    Method of depositing dielectric film having Si-N bonds by modified peald method
    5.
    发明授权
    Method of depositing dielectric film having Si-N bonds by modified peald method 有权

    公开(公告)号：US08129291B2

    公开(公告)日：2012-03-06

    申请号：US12901323

    申请日：2010-10-08

    申请人： Woo Jin Lee ,  Kuo-Wei Hong ,  Akira Shimizu ,  Deakyun Jeong

    发明人： Woo Jin Lee ,  Kuo-Wei Hong ,  Akira Shimizu ,  Deakyun Jeong

    IPC分类号： H01L21/31 ,  H01L21/469

    摘要： A method of forming dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a hydrogen-containing silicon precursor in pulses of less than 1.0-second duration into the reaction space wherein the reactive gas and the rare gas are introduced; exiting a plasma in pulses of less than 1.0-second duration immediately after the silicon precursor is shut off; and maintaining the reactive gas and the rare gas as a purge of less than 2.0-second duration.

    METHOD OF FORMING CONFORMAL DIELECTRIC FILM HAVING Si-N BONDS BY PECVD
    6.
    发明申请
    METHOD OF FORMING CONFORMAL DIELECTRIC FILM HAVING Si-N BONDS BY PECVD 有权
    通过PECVD形成具有Si-N键的合适电介质膜的方法

    公开(公告)号：US20100221925A1

    公开(公告)日：2010-09-02

    申请号：US12778808

    申请日：2010-05-12

    申请人： Woo Jin Lee ,  Akira Shimizu

    发明人： Woo Jin Lee ,  Akira Shimizu

    IPC分类号： H01L21/318

    CPC分类号： C23C16/045 ,  C23C16/345 ,  C23C16/45523 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31604 ,  H01L21/3185

    摘要： A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor as a first precursor and a hydrocarbon gas as a second precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film doped with carbon and having Si—N bonds on the substrate.

    摘要翻译： 通过等离子体增强化学气相沉积（PECVD）在半导体衬底上形成具有Si-N键的保形电介质膜的方法包括：将含氮和氢的反应气体和稀有气体引入反应空间内， 底物放置; 向反应空间施加RF功率; 并将作为第一前体的含氢硅前体和作为第二前体的烃气体以脉冲方式引入反应空间中，其中等离子体被激发，由此形成掺杂有碳并在衬底上具有Si-N键的保形电介质膜 。

    Method of Forming Conformal Dielectric Film Having Si-N Bonds by PECVD
    7.
    发明申请
    Method of Forming Conformal Dielectric Film Having Si-N Bonds by PECVD 有权
    通过PECVD形成具有Si-N键的保形介质膜的方法

    公开(公告)号：US20100184302A1

    公开(公告)日：2010-07-22

    申请号：US12357174

    申请日：2009-01-21

    申请人： Woo Jin LEE ,  Akira Shimizu ,  Atsuki Fukazawa

    发明人： Woo Jin LEE ,  Akira Shimizu ,  Atsuki Fukazawa

    IPC分类号： H01L21/469

    CPC分类号： C23C16/345 ,  C23C16/045 ,  C23C16/45523 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3185

    摘要： A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film having Si—N bonds on the substrate.

    摘要翻译： 通过等离子体增强化学气相沉积（PECVD）在半导体衬底上形成具有Si-N键的共形电介质膜的方法包括：将含氮和氢的反应气体和添加气体引入反应空间内， 底物放置; 向反应空间施加RF功率; 并将含氢的硅前体以脉冲方式引入到等离子体被激发的反应空间中，从而在衬底上形成具有Si-N键的保形电介质膜。

    METHOD OF DEPOSITING DIELECTRIC FILM BY MODIFIED PEALD METHOD
    8.
    发明申请
    METHOD OF DEPOSITING DIELECTRIC FILM BY MODIFIED PEALD METHOD 有权
    通过改性PEALD方法沉积介质膜的方法

    公开(公告)号：US20120220139A1

    公开(公告)日：2012-08-30

    申请号：US13410970

    申请日：2012-03-02

    申请人： Woo-Jin Lee ,  Kuo-wei Hong ,  Akira Shimizu ,  Deakyun Jeong

    发明人： Woo-Jin Lee ,  Kuo-wei Hong ,  Akira Shimizu ,  Deakyun Jeong

    IPC分类号： H01L21/31

    CPC分类号： C23C16/345 ,  C23C16/4554 ,  C23C16/5096 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31111

    摘要： A method of forming a film on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a precursor in pulses of less than 1.0-second duration into the reaction space wherein the reactive gas and the rare gas are introduced; exiting a plasma in pulses of less than 1.0-second duration immediately after the precursor is shut off; and maintaining the reactive gas and the rare gas as a purge of less than 2.0-second duration.

    摘要翻译： 通过等离子体增强原子层沉积（PEALD）在半导体衬底上形成膜的方法包括：将含氮和氢的反应气体和稀有气体引入到其中放置半导体衬底的反应空间中; 将引入小于1.0秒持续时间脉冲的前体引入反应气体和稀有气体的反应空间; 在前体关闭之后立即以小于1.0秒持续时间的脉冲离开等离子体; 并且将反应气体和稀有气体保持为小于2.0秒持续时间的吹扫。

    METHOD OF DEPOSITING DIELECTRIC FILM HAVING Si-N BONDS BY MODIFIED PEALD METHOD
    9.
    发明申请
    METHOD OF DEPOSITING DIELECTRIC FILM HAVING Si-N BONDS BY MODIFIED PEALD METHOD 有权
    通过改性PEALD方法沉积具有Si-N键的电介质膜的方法

    公开(公告)号：US20110086516A1

    公开(公告)日：2011-04-14

    申请号：US12901323

    申请日：2010-10-08

    申请人： Woo Jin Lee ,  Kuo-wei Hong ,  Akira Shimizu ,  Deakyun Jeong

    发明人： Woo Jin Lee ,  Kuo-wei Hong ,  Akira Shimizu ,  Deakyun Jeong

    IPC分类号： H01L21/318

    CPC分类号： H01L21/3185 ,  C23C16/345 ,  C23C16/4554 ,  C23C16/5096 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31111 ,  H01L21/3141

    摘要： A method of forming dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a hydrogen-containing silicon precursor in pulses of less than 1.0-second duration into the reaction space wherein the reactive gas and the rare gas are introduced; exiting a plasma in pulses of less than 1.0-second duration immediately after the silicon precursor is shut off; and maintaining the reactive gas and the rare gas as a purge of less than 2.0-second duration.

    摘要翻译： 通过等离子体增强原子层沉积（PEALD）在半导体衬底上形成具有Si-N键的电介质膜的方法包括：将含氮和氢的反应气体和稀有气体引入到半导体衬底 被放置 将具有小于1.0秒持续时间脉冲的含氢硅前体引入引入反应气体和稀有气体的反应空间中; 在硅前驱物被切断之后立即以小于1.0秒持续时间的脉冲离开等离子体; 并且将反应气体和稀有气体保持为小于2.0秒持续时间的吹扫。

    METHOD OF FORMING CONFORMAL DIELECTRIC FILM HAVING Si-N BONDS BY PECVD
    10.
    发明申请
    METHOD OF FORMING CONFORMAL DIELECTRIC FILM HAVING Si-N BONDS BY PECVD 有权
    通过PECVD形成具有Si-N键的合适电介质膜的方法

    公开(公告)号：US20100144162A1

    公开(公告)日：2010-06-10

    申请号：US12553759

    申请日：2009-09-03

    申请人： Woo Jin Lee ,  Akira Shimizu

    发明人： Woo Jin Lee ,  Akira Shimizu

    IPC分类号： H01L21/314

    CPC分类号： H01L21/3185 ,  C23C16/345 ,  C23C16/45523 ,  C23C16/5096 ,  H01L21/31111

    摘要： A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film having Si—N bonds on the substrate.

    摘要翻译： 通过等离子体增强化学气相沉积（PECVD）在半导体衬底上形成具有Si-N键的共形电介质膜的方法包括：将含氮和氢的反应气体和添加气体引入反应空间内， 底物放置; 向反应空间施加RF功率; 并将含氢的硅前体以脉冲方式引入到等离子体被激发的反应空间中，从而在衬底上形成具有Si-N键的保形电介质膜。