THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF
    11.
    发明申请
    THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF 有权
    薄膜晶体管阵列基板及其制造方法

    公开(公告)号:US20110168997A1

    公开(公告)日:2011-07-14

    申请号:US13006591

    申请日:2011-01-14

    Abstract: A thin film transistor (TFT) array substrate and a manufacturing method thereof are provided. The TFT array substrate may include a gate line disposed on a substrate and including a gate line and a gate electrode, an oxide semiconductor layer pattern disposed on the gate electrode, a data line disposed on the oxide semiconductor layer pattern and including a source electrode and a drain electrode of a thin film transistor (TFT) together with the gate electrode, and a data line extending in a direction intersecting the gate line, and etch stop patterns disposed at an area where the TFT is formed between the source/drain electrodes and the oxide semiconductor layer pattern and at an area where the gate line and the data line overlap each other between the gate line and the data line.

    Abstract translation: 提供薄膜晶体管(TFT)阵列基板及其制造方法。 TFT阵列基板可以包括设置在基板上的栅极线,包括栅极线和栅电极,设置在栅电极上的氧化物半导体层图案,设置在氧化物半导体层图案上的数据线,并且包括源电极和 薄膜晶体管(TFT)的漏电极和栅电极以及沿着与栅极线交叉的方向延伸的数据线,以及蚀刻停止图案,设置在源极/漏极之间形成TFT的区域,以及 氧化物半导体层图案和栅极线与数据线在栅极线与数据线之间重叠的区域。

    THIN FILM TRANSISTOR ARRAY PANEL
    12.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL 有权
    薄膜晶体管阵列

    公开(公告)号:US20090302316A1

    公开(公告)日:2009-12-10

    申请号:US12464920

    申请日:2009-05-13

    CPC classification number: H01L29/7869 H01L27/1225 H01L29/78696

    Abstract: A thin film transistor array panel includes a substrate, a gate line formed on the substrate and including a gate electrode, a gate insulating layer formed on the gate line, a semiconductor formed on the gate insulating layer and including a channel of a thin film transistor, a data line formed on the semiconductor and including a source electrode and a drain electrode formed on the semiconductor and opposite to the source electrode with respect to the channel of the thin film transistor, wherein the channel of the thin film transistor covers both side surfaces of the gate electrode.

    Abstract translation: 薄膜晶体管阵列面板包括基板,形成在基板上的栅极线,包括栅极电极,形成在栅极线上的栅极绝缘层,形成在栅极绝缘层上并包括薄膜晶体管的沟道的半导体 ,形成在半导体上的数据线,包括相对于薄膜晶体管的沟道形成在半导体上并与源电极相对的源电极和漏电极,其中薄膜晶体管的沟道覆盖两个侧表面 的栅电极。

    DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
    13.
    发明申请
    DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
    显示基板及其制造方法

    公开(公告)号:US20120037910A1

    公开(公告)日:2012-02-16

    申请号:US13111027

    申请日:2011-05-19

    CPC classification number: H01L27/1225

    Abstract: A display substrate includes; a gate pattern including a gate electrode disposed on a substrate, a gate insulation layer disposed on the substrate and the gate pattern, an insulation pattern including; a first thickness part disposed on a first area of the gate insulation layer overlapping the gate electrode and a second thickness part disposed on a second area of the gate insulation layer adjacent to the first area, an oxide semiconductor pattern disposed on the first thickness part of the first area, an etch stopper disposed on the oxide semiconductor pattern, a source pattern including a source electrode and a drain electrode which contact the oxide semiconductor pattern, and a pixel electrode which contacts the drain electrode.

    Abstract translation: 显示基板包括: 栅极图案,包括设置在基板上的栅极电极,设置在基板上的栅极绝缘层和栅极图案,绝缘图案,包括: 设置在与栅电极重叠的栅极绝缘层的第一区域上的第一厚度部分和设置在与第一区域相邻的栅极绝缘层的第二区域上的第二厚度部分,设置在栅极绝缘层的第一厚度部分上的氧化物半导体图案 第一区域,设置在氧化物半导体图案上的蚀刻停止件,包括与氧化物半导体图案接触的源电极和漏电极的源图案以及与漏电极接触的像素电极。

    METHOD AND APPARATUS FOR ACCOUNTING FOR CHANGES IN TRANSISTOR CHARACTERISTICS
    14.
    发明申请
    METHOD AND APPARATUS FOR ACCOUNTING FOR CHANGES IN TRANSISTOR CHARACTERISTICS 有权
    用于会计变更的晶体管特性的方法和装置

    公开(公告)号:US20100182068A1

    公开(公告)日:2010-07-22

    申请号:US12357261

    申请日:2009-01-21

    Abstract: A device for accounting for changes in characteristics of a transistor is presented. The device includes a transistor and a comparator receiving a feedback signal from the transistor and a reference signal. The comparator provides an output to a bias voltage generator. The bias voltage generator includes an input connected to the output of the comparator and an output connected to the transistor. In some embodiments of the invention the transistor is a double gate transistor and the bias voltage generator is applied to a top gate of the double gate transistor in order to control characteristics of the transistor such as turn on voltage.

    Abstract translation: 提出了一种用于考虑晶体管特性变化的装置。 该器件包括晶体管和比较器,其接收来自晶体管的反馈信号和参考信号。 比较器向偏置电压发生器提供输出。 偏置电压发生器包括连接到比较器的输出的输入端和连接到晶体管的输出。 在本发明的一些实施例中,晶体管是双栅极晶体管,并且偏置电压发生器被施加到双栅晶体管的顶栅,以便控制晶体管的特性,例如导通电压。

    DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
    16.
    发明申请
    DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    显示基板及其制造方法

    公开(公告)号:US20120286259A1

    公开(公告)日:2012-11-15

    申请号:US13431448

    申请日:2012-03-27

    CPC classification number: H01L29/7869 H01L27/1225 H01L27/1288 H01L29/66969

    Abstract: Exemplary embodiments of the present invention provide a display substrate including a gate electrode, an oxide semiconductor pattern, a source electrode, a drain electrode, and an etch stop pattern. The gate electrode may be disposed on a base substrate. The oxide semiconductor pattern may be disposed over the gate electrode. The source electrode may be disposed on the oxide semiconductor pattern. The drain electrode may be disposed on the oxide semiconductor pattern and spaced apart from the source electrode. The etch stop pattern may be disposed over the gate electrode, the etch stop pattern may be overlapping a space between the source electrode and the drain electrode and may include a metal oxide. The reliability of the display substrate may, therefore, be improved.

    Abstract translation: 本发明的示例性实施例提供了包括栅电极,氧化物半导体图案,源电极,漏电极和蚀刻停止图案的显示基板。 栅电极可以设置在基底基板上。 氧化物半导体图案可以设置在栅极上。 源极可以设置在氧化物半导体图案上。 漏极可以设置在氧化物半导体图案上并与源电极间隔开。 蚀刻停止图案可以设置在栅电极之上,蚀刻停止图案可以与源电极和漏电极之间的空间重叠,并且可以包括金属氧化物。 因此,可以提高显示基板的可靠性。

    DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE DISPLAY SUBSTRATE
    17.
    发明申请
    DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE DISPLAY SUBSTRATE 有权
    显示基板和制造显示基板的方法

    公开(公告)号:US20120211753A1

    公开(公告)日:2012-08-23

    申请号:US13328658

    申请日:2011-12-16

    CPC classification number: H01L27/1225 H01L27/1288

    Abstract: In a display substrate and a method of manufacturing the display substrate, the display substrate includes a data line, a channel pattern, an insulating pattern and a pixel electrode. The data line extends in a direction on a base substrate. The channel pattern is disposed in a separate region between an input electrode connected to the data line and an output electrode spaced apart from the input electrode. The channel pattern makes contact with the input electrode and the output electrode on the input and output electrodes. The insulating pattern is spaced apart from the channel pattern on the base substrate and includes a contact hole exposing the output electrode. The pixel electrode is formed on the insulating pattern to make contact with the output electrode through the contact hole. Thus, a damage of the oxide semiconductor layer may be minimized and a manufacturing process may be simplified.

    Abstract translation: 在显示基板和显示基板的制造方法中,显示基板包括数据线,通道图案,绝缘图案和像素电极。 数据线沿着基底基板上的方向延伸。 通道图案设置在与数据线连接的输入电极和与输入电极间隔开的输出电极之间的分离区域中。 通道图案与输入电极和输出电极上的输出电极接触。 绝缘图案与基底基板上的沟道图案间隔开,并且包括暴露输出电极的接触孔。 像素电极形成在绝缘图案上,以通过接触孔与输出电极接触。 因此,可以使氧化物半导体层的损伤最小化,并且可以简化制造工艺。

    LIQUID CRYSTAL DISPLAY
    18.
    发明申请
    LIQUID CRYSTAL DISPLAY 有权
    液晶显示器

    公开(公告)号:US20120194414A1

    公开(公告)日:2012-08-02

    申请号:US13419228

    申请日:2012-03-13

    Abstract: A liquid crystal display to prevent light leakage with an improvement of aperture ratio and a reduction of load of a data line is provided. The liquid crystal display includes a gate line and a storage electrode line formed on a insulating substrate and apart from each other, a first data line and a second data line intersecting the gate line, a first pixel electrode defined by the gate line and the first data line, and a second pixel electrode defined by the gate line and the second data line and neighboring the first pixel electrode. Also, a blocking electrode between the first pixel electrode and the second pixel electrode is included, wherein at least portion of the first data line is disposed under the first pixel electrode, and at least portion of the blocking electrode is disposed under the second pixel electrode and apart from the first data line.

    Abstract translation: 提供了一种液晶显示器,用于防止光泄漏,同时提高了开口率和减少了数据线的负载。 液晶显示器包括形成在绝缘基板上并且彼此分开的栅极线和存储电极线,与栅极线相交的第一数据线和第二数据线,由栅极线和第一栅极线限定的第一像素电极 数据线和由栅极线和第二数据线限定并与第一像素电极相邻的第二像素电极。 此外,包括第一像素电极和第二像素电极之间的阻挡电极,其中第一数据线的至少一部分设置在第一像素电极下方,并且阻挡电极的至少一部分设置在第二像素电极下方 并且除了第一条数据线之外。

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