公开(公告)号：US5051955A

公开(公告)日：1991-09-24

申请号：US543526

申请日：1990-06-26

申请人： Yasuo Kobayashi

发明人： Yasuo Kobayashi

IPC分类号： G11C11/419 ,  G11C7/10 ,  G11C11/409

CPC分类号： G11C7/106 ,  G11C7/1051

摘要： A semiconductor memory device capable of reading out stored data at high speed and with low power consumption includes a sense amplifier for amplifying a data signal stored in a selected memory cell, a data latch circuit for latching the output signal of the sense amplifier, a switching circuit for outputting the output signal of the data latch circuit, and an output circuit for receiving the output signal of the sense amplifier and the output signal of the switching circuit and generating a data output signal. It also includes at the power supply side, switching means for keeping the sense amplifier in an operative state as long as data signal is amplified in response to a sense enable signal.

公开(公告)号：US4954937A

公开(公告)日：1990-09-04

申请号：US404657

申请日：1989-09-08

申请人： Yasuo Kobayashi ,  Naoki Hagiwara ,  Taisuke Hirota ,  Churyo Kodama ,  Yasuo Hirasawa ,  Katsumi Miyazaki ,  Fumio Kawamura ,  Takao Higashi ,  Masami Yanagisawa ,  Akinori Sei

发明人： Yasuo Kobayashi ,  Naoki Hagiwara ,  Taisuke Hirota ,  Churyo Kodama ,  Yasuo Hirasawa ,  Katsumi Miyazaki ,  Fumio Kawamura ,  Takao Higashi ,  Masami Yanagisawa ,  Akinori Sei

IPC分类号： H01J61/35

CPC分类号： H01J61/35

摘要： A lighting lamp is disclosed, comprising a lamp having laminated on the surface of a bulb thereof a display sheet, said display sheet comprising a support having thereon an active layer containing a pigment which is faded by the action of an active light and an active light-adjusting layer.

公开(公告)号：US4766572A

公开(公告)日：1988-08-23

申请号：US813604

申请日：1985-12-26

申请人： Yasuo Kobayashi

发明人： Yasuo Kobayashi

IPC分类号： G11C11/417 ,  G11C7/10 ,  G11C7/22 ,  G11C8/18 ,  G11C11/401 ,  G11C11/41 ,  G11C11/419 ,  G11C7/00 ,  G11C8/00

CPC分类号： G11C7/22 ,  G11C7/1006 ,  G11C7/1051 ,  G11C8/18

摘要： A semiconductor memory is disclosed which attains a data read operation at a high speed with a low power dissipation. The memory includes a sense amplifier amplifying a data signal stored in the selected memory cell, a data latch circuit latching the output signal of the sense amplifier, a switching circuit outputting the output signal of the sense amplifier before the data latch circuit latches the output signal of the sense amplifier and outputting the output signal of the data latch circuit after the data latch circuit latches the output signal of the sense amplifier, and an output circuit producing an output data signal responsive to the output signal of the switching circuit.

摘要翻译： 公开了半导体存储器，其以低功耗实现高速数据读取操作。 存储器包括放大存储在所选存储单元中的数据信号的读出放大器，锁存读出放大器的输出信号的数据锁存电路，在数据锁存电路锁存输出信号之前输出读出放大器的输出信号的开关电路 并且在数据锁存电路锁存读出放大器的输出信号之后输出数据锁存电路的输出信号，以及响应于开关电路的输出信号产生输出数据信号的输出电路。

公开(公告)号：US4464209A

公开(公告)日：1984-08-07

申请号：US465349

申请日：1983-02-09

申请人： Tadaaki Taira ,  Junichiro Takehara ,  Yasuo Kobayashi ,  Kazuyoshi Ume

发明人： Tadaaki Taira ,  Junichiro Takehara ,  Yasuo Kobayashi ,  Kazuyoshi Ume

IPC分类号： B23K20/00 ,  B32B15/01 ,  C21D9/08 ,  C21D9/14 ,  C22C38/00 ,  C22C38/04 ,  C22C38/12 ,  B21C37/06 ,  B32B1/08

CPC分类号： C22C38/04 ,  C21D9/14 ,  C22C38/001 ,  C22C38/12 ,  Y10T428/12958 ,  Y10T428/12965 ,  Y10T428/12979

摘要： A clad steel pipe excellent in corrosion resistance and low-temperature toughness, which comprises a cladding sheet of high corrosion resistant steel and a substrate sheet of low-alloy high-strength steel, the substrate sheet consisting, as the fundamental constituents, essentially of:carbon: from 0.002 to 0.050 wt. %,silicon: from 0.05 to 0.80 wt. %,manganese: from 0.80 to 2.20 wt. %,niobium: from 0.01 to 0.10 wt. %,aluminum: from 0.01 to 0.08 wt. %,nitrogen: from 0.002 to 0.008 wt. %, and,the balance being iron and incidental impurities;or, the substrate sheet further additionally containing, as the strength-improving constituents, at least one element selected from the group consisting of:copper: from 0.05 to 1.00 wt. %,nickel: from 0.05 to 3.00 wt. %,chromium: from 0.05 to 1.00 wt. %,molybdenum: from 0.03 to 0.80 wt. %,vanadium: from 0.01 to 0.10 wt. %, and,boron: from 0.0003 to 0.0030 wt. %;or, the substrate sheet further additionally containing, as the toughness-improving constituent, titanium within the range of from 0.005 to 0.030 wt. %,the clad steel pipe being subjected to a solution treatment under the following conditions:heating temperature: from 900.degree. to 1,150.degree. C.,holding period: up to 15 minutes, and,cooling rate: from 5.degree. to 100.degree. C./second.

摘要翻译： 一种耐腐蚀性和低温韧性优异的复合钢管，其特征在于，包括高耐腐蚀性钢板的包覆片和低合金高强度钢的基材片，所述基材片基本上由以下组成： 碳：0.002〜0.050重量％ ％，硅：0.05〜0.80重量％ ％，锰：0.80〜2.20wt。 ％，铌：0.01〜0.10wt。 ％，铝：0.01〜0.08重量％ ％，氮：0.002〜0.008wt。 ％，余量为铁和杂质; 或者，所述基材片还另外含有作为强度提高成分的至少一种选自铜：0.05〜1.00wt。 ％，镍：0.05〜3.00重量％ ％，铬：0.05〜1.00重量％ ％，钼：0.03〜0.80重量％ ％，钒：0.01〜0.10wt。 ％，硼：0.0003〜0.0030wt。 ％; 或者，还含有作为韧性提高成分的基材，其含有0.005〜0.030重量％的钛。 ％，复合钢管在以下条件下进行固溶处理：加热温度：900〜1150℃，保温期：长达15分钟，冷却速度：5〜100℃ /第二。

公开(公告)号：US08765605B2

公开(公告)日：2014-07-01

申请号：US13138242

申请日：2010-01-22

申请人： Masahiro Horigome ,  Takuya Kurotori ,  Yasuo Kobayashi ,  Takaaki Matsuoka ,  Toshihisa Nozawa

发明人： Masahiro Horigome ,  Takuya Kurotori ,  Yasuo Kobayashi ,  Takaaki Matsuoka ,  Toshihisa Nozawa

IPC分类号： H01L21/44

CPC分类号： H01L21/32051 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/2855 ,  H01L21/3105 ,  H01L21/3146 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843 ,  H01L21/76864

摘要： A method for manufacturing semiconductor devices includes the steps of annealing an insulating layer and forming a barrier layer including a metal element over the insulating layer. The insulating layer includes a fluorocarbon (CFx) film. The barrier layer is formed by a high-temperature sputtering process after the annealing step.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在绝缘层上退火绝缘层并形成包含金属元件的阻挡层。 绝缘层包括碳氟化合物（CFx）膜。 在退火步骤之后通过高温溅射工艺形成阻挡层。

公开(公告)号：US07897205B2

公开(公告)日：2011-03-01

申请号：US11910983

申请日：2006-04-07

申请人： Takatoshi Kameshima ,  Kohei Kawamura ,  Yasuo Kobayashi

发明人： Takatoshi Kameshima ,  Kohei Kawamura ,  Yasuo Kobayashi

IPC分类号： C23C16/00

CPC分类号： C23C16/4404 ,  C23C16/4581 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/3185

摘要： A film forming method is characterized in that the method is provided with a step of introducing a processing gas including inorganic silane gas into a processing chamber, in which a mounting table composed of ceramics including a metal oxide is arranged, and precoating an inner wall of the processing chamber including a surface of the mounting table with a silicon-containing nonmetal thin film; a step of mounting a substrate to be processed on the mounting table precoated with the nonmetal thin film; and a step of introducing a processing gas including organic silane gas into the processing chamber, and forming a silicon-containing nonmetal thin film on a surface of the substrate mounted on the mounting table.

摘要翻译： 一种成膜方法的特征在于该方法具有将包括无机硅烷气体的处理气体引入到其中布置由包括金属氧化物的陶瓷构成的安装台的处理室中的步骤， 所述处理室包括具有含硅非金属薄膜的所述安装台的表面; 将要处理的基板安装在预先涂覆有非金属薄膜的安装台上的步骤; 以及将含有有机硅烷气体的处理气体导入处理室，在安装在安装台上的基板的表面上形成含硅非金属薄膜的工序。

公开(公告)号：US20100183756A1

公开(公告)日：2010-07-22

申请号：US12663607

申请日：2008-06-06

申请人： Yasuo Kobayashi ,  Kyo Nagashima ,  Masami Mochizuki

发明人： Yasuo Kobayashi ,  Kyo Nagashima ,  Masami Mochizuki

IPC分类号： A61K36/22 ,  A61P1/14 ,  A01K21/00

CPC分类号： A61K36/22 ,  A23K20/158

摘要： The present invention provides a rumen fermentation improving agent, comprising cashew nut shell liquid.

摘要翻译： 本发明提供了含有腰果壳液的瘤胃发酵改良剂。

公开(公告)号：US20090061092A1

公开(公告)日：2009-03-05

申请号：US11910983

申请日：2006-04-07

申请人： Takatoshi Kameshima ,  Kohei Kawamura ,  Yasuo Kobayashi

发明人： Takatoshi Kameshima ,  Kohei Kawamura ,  Yasuo Kobayashi

IPC分类号： C23C16/36 ,  C23C16/42

CPC分类号： C23C16/4404 ,  C23C16/4581 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/3185

摘要： A film forming method is characterized in that the method is provided with a step of introducing a processing gas including inorganic silane gas into a processing chamber, in which a mounting table composed of ceramics including a metal oxide is arranged, and precoating an inner wall of the processing chamber including a surface of the mounting table with a silicon-containing nonmetal thin film; a step of mounting a substrate to be processed on the mounting table precoated with the nonmetal thin film; and a step of introducing a processing gas including organic silane gas into the processing chamber, and forming a silicon-containing nonmetal thin film on a surface of the substrate mounted on the mounting table.

摘要翻译： 一种成膜方法的特征在于该方法具有将包括无机硅烷气体的处理气体引入到其中布置由包括金属氧化物的陶瓷构成的安装台的处理室中的步骤， 所述处理室包括具有含硅非金属薄膜的所述安装台的表面; 将要处理的基板安装在预先涂覆有非金属薄膜的安装台上的步骤; 以及将含有有机硅烷气体的处理气体导入处理室，在安装在安装台上的基板的表面上形成含硅非金属薄膜的工序。

公开(公告)号：US20080254641A1

公开(公告)日：2008-10-16

申请号：US10585994

申请日：2005-01-13

申请人： Yasuo Kobayashi ,  Kenichi Nishizawa ,  Takatoshi Kameshima ,  Takaaki Matsuoka

发明人： Yasuo Kobayashi ,  Kenichi Nishizawa ,  Takatoshi Kameshima ,  Takaaki Matsuoka

IPC分类号： H01L21/31 ,  C23C16/513

CPC分类号： H01L21/76835 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/31144 ,  H01L21/3127 ,  H01L21/3143 ,  H01L21/31633 ,  H01L21/76811 ,  H01L21/76832

摘要： A dielectric film (91) made of CF is deposited on a substrate. A protective layer comprising an SiCN film (93) is formed on the dielectric film (91). A film (94) serving as a hardmask made of SiCO is deposited on the protective layer by a plasma containing active species of silicon, carbon, and oxygen. When the protective layer is formed, an SiC film (92) is deposited on the dielectric film (91) by a plasma containing active species of silicon and carbon, and thereafter the SiCN film (93) is deposited on the SiC film (92) by a plasma containing active species of silicon, carbon, and nitrogen.

摘要翻译： 由CF制成的电介质膜（91）沉积在基板上。 在绝缘膜（91）上形成包含SiCN膜（93）的保护层。 作为由SiCO制成的硬掩模的膜（94）通过含有活性物质的硅，碳和氧的等离子体沉积在保护层上。 当形成保护层时，通过含有活性物质的硅和碳的等离子体在电介质膜（91）上沉积SiC膜（92），然后将SiCN膜（93）沉积在SiC膜（92）上， 通过含有硅，碳和氮的活性物质的等离子体。

公开(公告)号：US20050150455A1

公开(公告)日：2005-07-14

申请号：US11002788

申请日：2004-12-03

申请人： Yasuo Kobayashi ,  Masao Yoshioka

发明人： Yasuo Kobayashi ,  Masao Yoshioka

IPC分类号： H01L21/302 ,  C23C16/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H05H1/46

CPC分类号： H01L21/02052 ,  H01J37/32192 ,  H01J2237/2001 ,  H01L21/02063 ,  H01L21/31111 ,  H01L21/67115

摘要： The present invention provides a processing apparatus and a processing method, both of which can carry out a low-temperature process to allow active gas species to react with an oxide film on an object to be processed to form a product film and a heating process to heat the object to a predetermined temperature to evaporate the product film, in succession. This processing apparatus 12 is provided with a shielding plate 103 capable of entering a gap between the object W and a transparent window 28 and also withdrawing from the gap. On condition that the shielding plate 103 is closed to cut off irradiation heat from the transparent window 28, the product film is formed by allowing the active gas species of NF3 gas to react with a native oxide film on the object under the low-temperature condition. After that, upon closing the shielding plate 103, the native oxide film is removed by applying heat irradiated from a heating lamp 36 to the product film through the transparent window 28. Additionally, the apparatus includes a low-temperature processing chamber 207 allowing NF3 gas to react with the native oxide film at a low temperature and a heating chamber 209 for heating the product film, independently.

摘要翻译： 本发明提供了一种处理装置和处理方法，它们都可以进行低温处理，以使活性气体物质与待处理物体上的氧化膜反应以形成产物膜和加热过程 将物体加热到预定温度，以连续蒸发产物膜。 该处理装置12设置有能够进入物体W和透明窗28之间的间隙并且也从间隙排出的遮蔽板103。 在屏蔽板103闭合以截断来自透明窗28的照射热的条件下，通过使NF 3 N 3气体的活性气体种类与自然氧化物膜反应形成产物膜， 物体在低温条件下。 之后，在闭合屏蔽板103时，通过从加热灯36照射的热量通过透明窗口28将该自然氧化膜移除到产品膜。此外，该设备包括一个低温处理室207， 在低温下与天然氧化物膜反应，并且独立地加热产物膜的加热室209。