公开(公告)号：US20060274574A1

公开(公告)日：2006-12-07

申请号：US11502563

申请日：2006-08-11

申请人： Byung-Gil Choi ,  Choong-Keun Kwak ,  Du-Eung Kim ,  Beak-Hyung Cho

发明人： Byung-Gil Choi ,  Choong-Keun Kwak ,  Du-Eung Kim ,  Beak-Hyung Cho

IPC分类号： G11C11/00

CPC分类号： G11C13/0069 ,  G11C13/0004 ,  G11C13/0023 ,  G11C2013/0078 ,  G11C2013/0092

摘要： A phase-change cell memory device includes a plurality of phase-change memory cells, an address circuit, a write driver, and a write driver control circuit. The phase-change memory cells each include a volume of material that is programmable between amorphous and crystalline states. The address circuit selects at least one of the memory cells, and the write driver generates a reset pulse current to program a memory cell selected by the address circuit into the amorphous state, and a set pulse current to program the memory cell selected by the address circuit into the crystalline state. The write driver control circuit varies at least one of a pulse width and a pulse count of at least one of the reset and set pulse currents according to a load between the write driver and the memory cell selected by the address circuit.

公开(公告)号：US07064601B2

公开(公告)日：2006-06-20

申请号：US09955458

申请日：2001-09-18

申请人： Choong-Keun Kwak ,  Du-Eung Kim ,  Woo-Yeong Cho

发明人： Choong-Keun Kwak ,  Du-Eung Kim ,  Woo-Yeong Cho

IPC分类号： G05F1/46

CPC分类号： G05F3/262

摘要： A reference voltage generating circuit includes a current mirror circuit having first and second current paths formed between a first power source terminal and a second power source terminal in which the current mirror circuit is operated in response to a voltage level of the second current path, a reference voltage output node for providing a reference voltage and being located on the second current path, an active resistance device formed on the first current path to be operated in a linear region of a current-voltage characteristic curve of the active resistance device, and a voltage supply circuit for supplying the active resistance device with an enable voltage to control the active resistance device to be operated in the linear region.

公开(公告)号：US20060050548A1

公开(公告)日：2006-03-09

申请号：US11220294

申请日：2005-09-06

申请人： Hyung-Rok Oh ,  Baek-Hyung Cho ,  Choong-Keun Kwak

发明人： Hyung-Rok Oh ,  Baek-Hyung Cho ,  Choong-Keun Kwak

IPC分类号： G11C11/00

CPC分类号： G11C7/12 ,  G11C7/14 ,  G11C13/0004 ,  G11C13/0026 ,  G11C13/004 ,  G11C2013/0054 ,  G11C2213/79

摘要： A semiconductor memory device compensates leakage current. A plurality of memory cells is disposed at intersections of word lines and bit lines. A plurality of dummy cells is connected to at least one dummy bit line. A leakage compensation circuit is connected to the at least one dummy bit line that outputs a leakage compensation current to at least one of the bit lines. A read current supply circuit outputs a read current necessary for a read operation to at least one of the bit lines in response to a first control signal. The memory device is a phase-change memory device containing phase-change material. The semiconductor memory device compensates leakage current in a read operation and supplies the leakage compensation current to a selected bit line, thereby suppressing error operation occurrence caused by leakage current.

摘要翻译： 半导体存储器件补偿漏电流。 多个存储单元设置在字线和位线的交点处。 多个虚拟单元被连接到至少一个虚拟位线。 泄漏补偿电路连接到至少一个虚拟位线，其向至少一个位线输出泄漏补偿电流。 读取电流供应电路响应于第一控制信号向至少一个位线输出读取操作所需的读取电流。 存储器件是包含相变材料的相变存储器件。 半导体存储器件在读取操作中补偿漏电流，并将泄漏补偿电流提供给所选择的位线，从而抑制由漏电流引起的误操作发生。

公开(公告)号：US20050281106A1

公开(公告)日：2005-12-22

申请号：US11146513

申请日：2005-06-07

申请人： Gong-Heum Han ,  Choong-Keun Kwak ,  Joon-Min Park

发明人： Gong-Heum Han ,  Choong-Keun Kwak ,  Joon-Min Park

IPC分类号： G11C5/14 ,  G11C7/00 ,  G11C11/417

CPC分类号： G11C11/417 ,  G11C5/147

摘要： A semiconductor memory device, which has an array of memory cells connected with a plurality of bit line pairs and a plurality of word lines, to perform a read or write operation of data, having low power consumption is provided. The device includes a first power supply for supplying a first power source voltage. Also, a second power supply supplies a second power source voltage having a lower voltage level than the first power source voltage. Further, the device includes a standard ground. An elevated ground circuit provides an elevated ground voltage having a higher voltage level than that of the standard ground. A first power circuit is connected with the first power supply and the standard ground, and operates in response to the first power source voltage. A second power circuit is connected with the second power supply and the elevated ground circuit, and operates in response to the second power source voltage. Thereby, power and chip size can be reduced.

摘要翻译： 提供具有与多个位线对和多个字线连接的存储单元的阵列以执行具有低功耗的数据的读取或写入操作的半导体存储器件。 该装置包括用于提供第一电源电压的第一电源。 此外，第二电源提供具有比第一电源电压低的电压电平的第二电源电压。 此外，该装置包括标准接地。 提升的接地电路提供比标准接地电压高的电压电平的升高的接地电压。 第一电源电路与第一电源和标准接地相连接，并响应于第一电源电压而工作。 第二电源电路与第二电源和升高的接地电路连接，并且响应于第二电源电压而工作。 从而可以降低功率和芯片尺寸。

公开(公告)号：US06657264B2

公开(公告)日：2003-12-02

申请号：US09940733

申请日：2001-08-28

申请人： Beak-Hyung Cho ,  Choong-Keun Kwak

发明人： Beak-Hyung Cho ,  Choong-Keun Kwak

IPC分类号： H01L2994

CPC分类号： H01L27/0921 ,  H01L27/0266

摘要： A layout method is provided for a latch-up prevention circuit of a semiconductor memory device which includes the steps of: arranging a cell array at substantially the middle of the device; placing peripheral circuits next to both sides of the cell array; placing a plurality of pads on both sides of the cell array between the peripheral circuits and both edges of the device; and arranging guard rings beneath the plurality of pads. The layout method further includes a plurality of ESD protection transistors disposed axially along the direction as the plurality of pads between the plurality of pads and an edge of the device. And each of guard ring is a NWELL guard ring, and connected to a supply voltage and ground.

公开(公告)号：US5818770A

公开(公告)日：1998-10-06

申请号：US979302

申请日：1997-11-26

申请人： Jae-Chul Kim ,  Choong-Keun Kwak

发明人： Jae-Chul Kim ,  Choong-Keun Kwak

IPC分类号： G11C11/407 ,  G11C7/12 ,  G11C8/08 ,  G11C8/10 ,  G11C7/00

CPC分类号： G11C7/12 ,  G11C8/08 ,  G11C8/10

摘要： The present invention relates to a circuit and method for write recovery control for suppressing malfunctions during a write recovery operation. The circuit is for use in a semiconductor memory device including a plurality of memory cells connected in a matrix form to a plurality of word lines and paired bit lines. The circuit comprises a variable load circuit connected to the bit lines, for controlling the voltage level of the bit lines in response to a write enable signal, a word line selector for selecting a predetermined word line in response to an input address, and a delay controller for providing a delay control signal to the word line selector so as to delay activation of the word line selector during the write recovery operation.

摘要翻译： 本发明涉及一种用于在写入恢复操作期间抑制故障的写恢复控制的电路和方法。 该电路用于包括以矩阵形式连接到多条字线和成对位线的多个存储单元的半导体存储器件。 电路包括连接到位线的可变负载电路，用于响应于写使能信号来控制位线的电压电平，用于响应于输入地址选择预定字线的字线选择器和延迟 控制器，用于向字线选择器提供延迟控制信号，以便在写恢复操作期间延迟字线选择器的激活。

公开(公告)号：US07535760B2

公开(公告)日：2009-05-19

申请号：US11902424

申请日：2007-09-21

申请人： Kwang-Jin Lee ,  Won-Seok Lee ,  Choong-Keun Kwak

发明人： Kwang-Jin Lee ,  Won-Seok Lee ,  Choong-Keun Kwak

IPC分类号： G11C14/00

CPC分类号： H01L27/10802 ,  G11C7/00 ,  G11C7/10 ,  G11C7/1051 ,  G11C7/1057 ,  G11C7/1084 ,  G11C11/4063 ,  H01L21/84 ,  H01L27/10844 ,  H01L27/1203 ,  H01L29/7841

摘要： A non volatile memory device and a memory system having the same are disclosed. The non volatile memory device may include a memory cell array having a plurality of non volatile memory cells, a DRAM interface for exchanging data, a command and an address with an external device, a controller for selecting one of the memory cells in response to the address and performing a control operation for one of outputting data of the selected memory cell to the external device in response to the command and storing data received from the external device, and a DRAM buffer memory. The DRAM buffer memory has dynamic memory cells, and each of the dynamic memory cells has one transistor with a floating body.

摘要翻译： 公开了一种非易失性存储器件和具有该非易失性存储器件的存储器系统。 非易失性存储器件可以包括具有多个非易失性存储器单元的存储器单元阵列，用于交换数据的DRAM接口，与外部设备的命令和地址，用于响应于所述存储器单元选择所述存储器单元中的一个的控制器 对所述存储器单元的数据的输出响应于所述命令并存储从所述外部设备接收的数据以及DRAM缓冲存储器，对所述存储单元的数据进行输出的地址和执行控制操作。 DRAM缓冲存储器具有动态存储单元，并且每个动态存储单元具有一个具有浮体的晶体管。

公开(公告)号：US07463511B2

公开(公告)日：2008-12-09

申请号：US11723361

申请日：2007-03-19

申请人： Byung-Gil Choi ,  Choong-Keun Kwak ,  Du-Eung Kim ,  Woo-Yeong Cho

发明人： Byung-Gil Choi ,  Choong-Keun Kwak ,  Du-Eung Kim ,  Woo-Yeong Cho

IPC分类号： G11C11/00

CPC分类号： G11C8/10 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/0078 ,  G11C2213/72

摘要： A phase change memory device includes a memory cell array and a write driver circuit, and a column selection circuit. The memory cell array includes a plurality of block units each connected between a corresponding pair of word line drivers. The write driver circuit includes a plurality of write driver units each comprising a plurality of write drivers adapted to provide respective programming currents to a corresponding block unit among the plurality of block units. The column selection circuit is connected between the memory cell array and the write driver circuit and is adapted to select at least one of the plurality of memory blocks in response to a column selection signal to provide corresponding programming currents to the at least one of the plurality of memory blocks.

摘要翻译： 相变存储器件包括存储单元阵列和写入驱动器电路以及列选择电路。 存储单元阵列包括多个块单元，每个块单元连接在相应的一对字线驱动器之间。 写驱动器电路包括多个写驱动器单元，每个写驱动器单元包括多个写驱动器，其适于向多个块单元中的相应块单元提供相应的编程电流。 列选择电路连接在存储单元阵列和写驱动器电路之间，并且适于响应于列选择信号选择多个存储器块中的至少一个，以向多个存储单元阵列中的至少一个提供对应的编程电流 的内存块。

公开(公告)号：US20070242503A1

公开(公告)日：2007-10-18

申请号：US11723361

申请日：2007-03-19

申请人： Byung-Gil Choi ,  Choong-Keun Kwak ,  Du-Eung Kim ,  Woo-Yeong Cho

发明人： Byung-Gil Choi ,  Choong-Keun Kwak ,  Du-Eung Kim ,  Woo-Yeong Cho

IPC分类号： G11C11/00

CPC分类号： G11C8/10 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/0078 ,  G11C2213/72

摘要： A phase change memory device comprises a memory cell array and a write driver circuit, and a column selection circuit. The memory cell array comprises a plurality of block units each connected between a corresponding pair of word line drivers. The write driver circuit comprises a plurality of write driver units each comprising a plurality of write drivers adapted to provide respective programming currents to a corresponding block unit among the plurality of block units. The column selection circuit is connected between the memory cell array and the write driver circuit and is adapted to select at least one of the plurality of memory blocks in response to a column selection signal to provide corresponding programming currents to the at least one of the plurality of memory blocks.

摘要翻译： 相变存储器件包括存储单元阵列和写入驱动器电路以及列选择电路。 存储单元阵列包括多个块单元，每个块单元连接在对应的一对字线驱动器之间。 写驱动器电路包括多个写驱动器单元，每个写驱动器单元包括多个写驱动器，其适于向多个块单元中的相应块单元提供相应的编程电流。 列选择电路连接在存储单元阵列和写驱动器电路之间，并且适于响应于列选择信号选择多个存储器块中的至少一个，以向多个存储单元阵列中的至少一个提供对应的编程电流 的内存块。

公开(公告)号：US07248494B2

公开(公告)日：2007-07-24

申请号：US11220294

申请日：2005-09-06

申请人： Hyung-Rok Oh ,  Baek-Hyung Cho ,  Choong-Keun Kwak

发明人： Hyung-Rok Oh ,  Baek-Hyung Cho ,  Choong-Keun Kwak

IPC分类号： G11C11/00

CPC分类号： G11C7/12 ,  G11C7/14 ,  G11C13/0004 ,  G11C13/0026 ,  G11C13/004 ,  G11C2013/0054 ,  G11C2213/79

摘要： A semiconductor memory device compensates leakage current. A plurality of memory cells is disposed at intersections of word lines and bit lines. A plurality of dummy cells is connected to at least one dummy bit line. A leakage compensation circuit is connected to the at least one dummy bit line that outputs a leakage compensation current to at least one of the bit lines. A read current supply circuit outputs a read current necessary for a read operation to at least one of the bit lines in response to a first control signal. The memory device is a phase-change memory device containing phase-change material. The semiconductor memory device compensates leakage current in a read operation and supplies the leakage compensation current to a selected bit line, thereby suppressing error operation occurrence caused by leakage current.

摘要翻译： 半导体存储器件补偿漏电流。 多个存储单元设置在字线和位线的交点处。 多个虚拟单元被连接到至少一个虚拟位线。 泄漏补偿电路连接到至少一个虚拟位线，其向至少一个位线输出泄漏补偿电流。 读取电流供应电路响应于第一控制信号向至少一个位线输出读取操作所需的读取电流。 存储器件是包含相变材料的相变存储器件。 半导体存储器件在读取操作中补偿漏电流，并将泄漏补偿电流提供给所选择的位线，从而抑制由漏电流引起的误操作发生。