公开(公告)号：US08675948B2

公开(公告)日：2014-03-18

申请号：US13066180

申请日：2011-04-07

申请人： Yoshiaki Ogiso ,  Tsutomu Murakawa

发明人： Yoshiaki Ogiso ,  Tsutomu Murakawa

IPC分类号： G06K9/00

CPC分类号： H01J37/28 ,  G03F1/86 ,  H01J37/222 ,  H01J2237/2817

摘要： A mask inspection apparatus includes irradiation means for irradiating a sample with an electron beam, electron detection means for detecting a quantity of electrons generated from the sample having a pattern formed thereon by the irradiation with the electron beam, image processing means for generating image data of the pattern on the basis of the quantity of the electrons, and control means for creating a line profile and a differential profile of the pattern formed on the sample on the basis of the quantity of the electrons detected by the electron detection means. The control means detects a rising edge and a falling edge of the pattern on the basis of the differential profile, and then generates mask data of a multi-level structure on the basis of data of the edges and the image data created by the image processing means.

摘要翻译： 掩模检查装置包括用电子束照射样品的照射装置，用于通过用电子束的照射检测从其上形成有图案的样品产生的电子量的电子检测装置，用于产生电子束的图像数据的图像处理装置 基于电子量的图案，以及用于根据由电子检测装置检测的电子量产生样品上形成的图案的线轮廓和差分轮廓的控制装置。 控制装置根据差分轮廓检测图案的上升沿和下降沿，然后根据边缘数据和由图像处理产生的图像数据生成多级结构的掩码数据 手段。

公开(公告)号：US20100181985A1

公开(公告)日：2010-07-22

申请号：US12686579

申请日：2010-01-13

申请人： Hiroki Inoue ,  Kiyoshi Kato ,  Shuhei Nagatsuka ,  Koichiro Kamata ,  Tsutomu Murakawa ,  Takahiro Tuji ,  Kaori Ikada

发明人： Hiroki Inoue ,  Kiyoshi Kato ,  Shuhei Nagatsuka ,  Koichiro Kamata ,  Tsutomu Murakawa ,  Takahiro Tuji ,  Kaori Ikada

IPC分类号： G05F3/16

CPC分类号： G05F3/16 ,  G05F1/56 ,  G05F3/242

摘要： One object of the present invention is to provide a regulator circuit with an improved noise margin. In a regulator circuit including a bias circuit generating a reference voltage on the basis of the potential difference between a first power supply terminal and a second power supply terminal, and a voltage regulator outputting a potential to an output terminal on the basis of a reference potential input from the bias circuit, a bypass capacitor is provided between a power supply terminal and a node to which a gate of a transistor included in the bias circuit is connected.

摘要翻译： 本发明的一个目的是提供一种具有改善的噪声容限的调节器电路。 在包括基于第一电源端子和第二电源端子之间的电位差产生参考电压的偏置电路的调节器电路中，以及基于参考电位向输出端子输出电位的电压调节器 在偏置电路的输入端，在电源端子与偏置电路中包含的晶体管的栅极连接的节点之间设置有旁路电容器。

公开(公告)号：US4598679A

公开(公告)日：1986-07-08

申请号：US733023

申请日：1985-05-13

申请人： Hiroya Ohkumo ,  Tsutomu Murakawa

发明人： Hiroya Ohkumo ,  Tsutomu Murakawa

IPC分类号： F02D41/00 ,  F02D41/12

CPC分类号： F02D41/126

摘要： A fuel control system for a motor vehicle has an accelerator pedal switch for detecting deceleration of the vehicle, an engine speed detecting circuit for detecting high engine speed and low engine speed. The system has gate circuits responsive to the outputs of the accelerator pedal switch and engine speed detecting circuit at high engine speed for producing a signal for cutting off fuel supplied to cylinders of the engine, and to responsive to the output of the engine speed detecting circuit at low engine speed for intermittently supplying the fuel and thereafter for continuously supplying the fuel.

摘要翻译： 用于机动车辆的燃料控制系统具有用于检测车辆减速的加速器踏板开关，用于检测发动机高转速和低发动机转速的发动机转速检测电路。 该系统具有响应加速器踏板开关和发动机转速检测电路的输出的门电路，以高发动机转速产生用于切断供应到发动机气缸的燃料的信号，并且响应于发动机转速检测电路的输出 在低发动机转速下间歇地供给燃料，然后连续地供给燃料。

公开(公告)号：US08604431B2

公开(公告)日：2013-12-10

申请号：US13407521

申请日：2012-02-28

申请人： Tsutomu Murakawa ,  Hidemitsu Hakii ,  Isao Yonekura

发明人： Tsutomu Murakawa ,  Hidemitsu Hakii ,  Isao Yonekura

IPC分类号： H01J37/26 ,  H01J37/28 ,  H01J37/24 ,  G01N23/225

CPC分类号： H01J37/26 ,  G01B15/00 ,  G01B2210/56 ,  G01N23/225 ,  H01J37/222 ,  H01J37/24 ,  H01J37/28 ,  H01J2237/24578

摘要： An electron beam is irradiated on an observation region of a sample surface. An image (SEM image) is acquired based on a detection signal of secondary electrons from a detector disposed obliquely above the observation region. A length of a shadow of a pattern appearing in the image is detected. Then, a height H of the pattern is calculated by a formula H=L×tan θ on the basis of the detected length L of the shadow and an apparent angle θ of the detector to the sample surface obtained in advance. An intensity distribution of the secondary electrons on a line orthogonal to an edge of the pattern is extracted, and the length L of the shadow of the pattern is obtained as a distance between two points where a recess portion of the intensity distribution intersects a predetermined threshold.

摘要翻译： 电子束被照射在样品表面的观察区域上。 基于从观察区域倾斜地设置的检测器的二次电子的检测信号获取图像（SEM图像）。 检测图像中出现的图案的阴影的长度。 然后，基于检测到的阴影长度L和预先获得的检测器对样品表面的视角θ，通过公式H = L×tanθ计算图案的高度H. 提取与图案边缘正交的线上的二次电子的强度分布，并且获得图案阴影的长度L作为强度分布的凹部与预定阈值相交的两个点之间的距离 。

公开(公告)号：US08587286B2

公开(公告)日：2013-11-19

申请号：US12686579

申请日：2010-01-13

申请人： Hiroki Inoue ,  Kiyoshi Kato ,  Shuhei Nagatsuka ,  Koichiro Kamata ,  Tsutomu Murakawa ,  Takahiro Tuji ,  Kaori Ikada

发明人： Hiroki Inoue ,  Kiyoshi Kato ,  Shuhei Nagatsuka ,  Koichiro Kamata ,  Tsutomu Murakawa ,  Takahiro Tuji ,  Kaori Ikada

IPC分类号： G05F3/16 ,  G05F1/00

CPC分类号： G05F3/16 ,  G05F1/56 ,  G05F3/242

摘要： One object of the present invention is to provide a regulator circuit with an improved noise margin. In a regulator circuit including a bias circuit generating a reference voltage on the basis of the potential difference between a first power supply terminal and a second power supply terminal, and a voltage regulator outputting a potential to an output terminal on the basis of a reference potential input from the bias circuit, a bypass capacitor is provided between a power supply terminal and a node to which a gate of a transistor included in the bias circuit is connected.

摘要翻译： 本发明的一个目的是提供一种具有改善的噪声容限的调节器电路。 在包括基于第一电源端子和第二电源端子之间的电位差产生参考电压的偏置电路的调节器电路中，以及基于参考电位向输出端子输出电位的电压调节器 在偏置电路的输入端，在电源端子与偏置电路中包含的晶体管的栅极连接的节点之间设置有旁路电容器。

公开(公告)号：US20130068947A1

公开(公告)日：2013-03-21

申请号：US13317860

申请日：2011-10-31

申请人： Takayuki Nakamura ,  Tsutomu Murakawa

发明人： Takayuki Nakamura ,  Tsutomu Murakawa

IPC分类号： H01J37/28

CPC分类号： H01J37/28 ,  G01N23/225

摘要： A pattern inspection apparatus includes: an irradiator irradiating a sample with an electron beam; an electron detector detecting an amount of electrons generated on the sample having a pattern formed thereon, by the irradiation of the electron beam; an image processor generating a SEM image of the pattern on the basis of the electron amount; and a controller acquiring defect position information on the pattern formed on the sample from an optical defect inspection device is provided. The controller specifies a defect candidate pattern from the SEM image and judges whether a defect in the defect candidate pattern is to be transferred onto a wafer. The controller determines a view field of the SEM image and specifies the defect candidate pattern from information on patterns in the SEM image in the view field.

摘要翻译： 图案检查装置包括：用电子束照射样品的照射器; 电子检测器，通过电子束的照射检测在其上形成有图案的样品上产生的电子的量; 基于电子量产生图案的SEM图像的图像处理器; 提供了从光学缺陷检查装置获取关于样品上形成的图案的缺陷位置信息的控制器。 控制器从SEM图像中指定缺陷候选图案，并判断缺陷候选图案中的缺陷是否被转印到晶片上。 控制器确定SEM图像的视野，并从视场中的SEM图像中的模式信息中指定缺陷候选模式。

公开(公告)号：US08047442B2

公开(公告)日：2011-11-01

申请号：US12275870

申请日：2008-11-21

申请人： Shunpei Yamazaki ,  Yuugo Goto ,  Tsutomu Murakawa

发明人： Shunpei Yamazaki ,  Yuugo Goto ,  Tsutomu Murakawa

IPC分类号： G06K19/06

CPC分类号： H01L27/1218

摘要： A semiconductor device in which damages to an element such as a transistor are reduced even when external force such as bending is applied and stress is generated in the semiconductor device. The semiconductor device includes a first island-like reinforcement film over a substrate having flexibility; a semiconductor film including a channel formation region and an impurity region over the first island-like reinforcement film; a first conductive film over the channel formation region with a gate insulating film interposed therebetween; a second island-like reinforcement film covering the first conductive film and the gate insulating film.

摘要翻译： 即使在施加诸如弯曲的外力并且在半导体器件中产生应力的情况下，诸如晶体管的元件的损坏也减小的半导体器件。 半导体器件包括在具有柔性的衬底上的第一岛状增强膜; 包括第一岛状增强膜上的沟道形成区域和杂质区域的半导体膜; 在沟道形成区域上的第一导电膜，其间插入有栅极绝缘膜; 覆盖第一导电膜和栅极绝缘膜的第二岛状加强膜。

公开(公告)号：US09196743B2

公开(公告)日：2015-11-24

申请号：US13860855

申请日：2013-04-11

申请人： Masatoshi Yokoyama ,  Tsutomu Murakawa ,  Kenichi Okazaki ,  Masayuki Sakakura ,  Takuya Matsuo ,  Akihiro Oda ,  Shigeyasu Mori ,  Yoshitaka Yamamoto

发明人： Masatoshi Yokoyama ,  Tsutomu Murakawa ,  Kenichi Okazaki ,  Masayuki Sakakura ,  Takuya Matsuo ,  Akihiro Oda ,  Shigeyasu Mori ,  Yoshitaka Yamamoto

IPC分类号： H01L29/10 ,  H01L29/786

CPC分类号： H01L29/7869

摘要： Provided is a semiconductor device in which generation of a parasitic channel in an end region of an oxide semiconductor film is suppressed. The semiconductor device includes a gate electrode, an oxide semiconductor film, a source electrode and a drain electrode, and a channel region formed in the oxide semiconductor film. The channel region is formed between a first side surface of the source electrode and a second side surface of the drain electrode opposite to the first side surface. The oxide semiconductor film has an end region which does not overlap with the gate electrode. The end region which does not overlap with the gate electrode is positioned between a first region that is the nearest to one end of the first side surface and a second region that is the nearest to one end of the second side surface.

摘要翻译： 提供了抑制氧化物半导体膜的端部区域中的寄生通道的产生的半导体装置。 半导体器件包括栅电极，氧化物半导体膜，源电极和漏极，以及形成在氧化物半导体膜中的沟道区。 沟道区形成在源电极的第一侧表面和与第一侧表面相对的漏电极的第二侧表面之间。 氧化物半导体膜具有不与栅电极重叠的端部区域。 不与栅电极重叠的端部区域位于最靠近第一侧表面的一端的第一区域和最靠近第二侧表面的一端的第二区域之间。

公开(公告)号：US08785926B2

公开(公告)日：2014-07-22

申请号：US13860879

申请日：2013-04-11

申请人： Masatoshi Yokoyama ,  Tsutomu Murakawa ,  Kenichi Okazaki ,  Masayuki Sakakura ,  Takuya Matsuo ,  Yosuke Kanzaki ,  Hiroshi Matsukizono ,  Yoshitaka Yamamoto

发明人： Masatoshi Yokoyama ,  Tsutomu Murakawa ,  Kenichi Okazaki ,  Masayuki Sakakura ,  Takuya Matsuo ,  Yosuke Kanzaki ,  Hiroshi Matsukizono ,  Yoshitaka Yamamoto

IPC分类号： H01L29/10

CPC分类号： H01L29/7869 ,  H01L29/78696

摘要： The semiconductor conductor device includes a gate electrode 106, an oxide semiconductor film 110, a source electrode 114a and a drain electrode 114b, and a channel region formed in the oxide semiconductor film. The channel region is formed between a first side surface 214a of the source electrode and a second side surface 214b of the drain electrode opposite to the first side surface 214a. The oxide semiconductor film has a side surface which overlaps with the gate electrode, which has a first high resistance region positioned between a first region 206a that is the nearest to one end 314a of the first side surface 214a and a second region 206b that is the nearest to one end 314b of the second side surface 214b. The first high resistance region has a corrugated side surface or the like.

摘要翻译： 半导体导体器件包括栅电极106，氧化物半导体膜110，源极114a和漏电极114b以及形成在氧化物半导体膜中的沟道区。 沟道区形成在源电极的第一侧表面214a和与第一侧表面214a相对的漏电极的第二侧表面214b之间。 氧化物半导体膜具有与栅电极重叠的侧面，该侧面具有位于最靠近第一侧面214a的一端314a的第一区域206a和位于第一侧面214a的一端314a的第一区域206a之间的第一高电阻区域， 最靠近第二侧表面214b的一端314b。 第一高电阻区域具有波纹状的侧面等。

公开(公告)号：US08692823B2

公开(公告)日：2014-04-08

申请号：US13193981

申请日：2011-07-29

申请人： Kouhei Toyotaka ,  Hiroyuki Miyake ,  Ryo Arasawa ,  Koji Kusunoki ,  Tsutomu Murakawa

发明人： Kouhei Toyotaka ,  Hiroyuki Miyake ,  Ryo Arasawa ,  Koji Kusunoki ,  Tsutomu Murakawa

IPC分类号： G06F3/038

CPC分类号： G09G3/3648 ,  G09G3/20 ,  G09G3/36 ,  G09G3/3688 ,  G09G2320/103 ,  G09G2330/04

摘要： Provided is a liquid crystal display device having a pixel including a transistor and a liquid crystal element and a protection circuit electrically connected to one of a source and a drain of the transistor through a data line. The protection circuit includes a first terminal supplied with a first power supply potential and a second terminal supplied with a second power supply potential higher than the first power supply potential. In a moving image display mode, an image signal is input from the data line to the liquid crystal element through the transistor, and the first power supply potential is set at the first potential. In a still image display mode, supply of the image signal is stopped, and the first power supply potential is set at the second potential. The second potential is substantially the same as the minimum value of the image signal.

摘要翻译： 提供一种液晶显示装置，其具有包括晶体管和液晶元件的像素，以及通过数据线电连接到晶体管的源极和漏极之一的保护电路。 保护电路包括提供有第一电源电位的第一端子和被提供有高于第一电源电位的第二电源电位的第二端子。 在运动图像显示模式中，图像信号通过晶体管从数据线输入到液晶元件，并且第一电源电位被设置为第一电位。 在静止图像显示模式下，停止图像信号的供给，将第一电源电位设定为第二电位。 第二电位与图像信号的最小值基本相同。