公开(公告)号：US08605408B2

公开(公告)日：2013-12-10

申请号：US12877435

申请日：2010-09-08

Applicant: Shinsuke Godo ,  Yukio Yasuda ,  Atsunobu Kawamoto

Inventor： Shinsuke Godo ,  Yukio Yasuda ,  Atsunobu Kawamoto

IPC: F23Q3/00

CPC classification number: F02P3/0442 ,  F02D2041/2048 ,  F02D2041/2051 ,  F02P3/0554

Abstract: A power semiconductor device for an igniter comprises: a first semiconductor switching device; and an integrated circuit, wherein the integrated circuit includes: a second semiconductor switching device connected in parallel with the first semiconductor switching device and having a smaller current capacity than a current capacity of the first semiconductor switching device; a delay circuit delaying a control input signal so that the second semiconductor switching device is energized prior to the first semiconductor switching device; a third semiconductor switching device including a thyristor structure connected to a high voltage side main terminal of the second semiconductor switching device and being made conductive by a part of a main current flowing through the energized second semiconductor switching device; and a first excess voltage detection circuit stopping the first semiconductor switching device when voltage on the high voltage side main terminal is equal to or more than a predetermined voltage.

Abstract translation: 一种用于点火器的功率半导体器件包括：第一半导体开关器件; 以及集成电路，其中所述集成电路包括：与所述第一半导体开关器件并联连接并且具有比所述第一半导体开关器件的电流容量更小的电流容量的第二半导体开关器件; 延迟电路延迟控制输入信号，使得第二半导体开关器件在第一半导体开关器件之前被通电; 第三半导体开关器件，其包括与所述第二半导体开关器件的高电压侧主端子连接的晶闸管结构，并且通过流过所述通电的第二半导体开关器件的主电流的一部分导通; 以及当高电压侧主端子上的电压等于或大于预定电压时，第一过电压检测电路停止第一半导体开关器件。

公开(公告)号：US08288947B2

公开(公告)日：2012-10-16

申请号：US12903713

申请日：2010-10-13

Applicant: Toshio Yokota ,  Taku Sumitomo ,  Yukio Yasuda

Inventor： Toshio Yokota ,  Taku Sumitomo ,  Yukio Yasuda

IPC: H01J61/00 ,  G01J1/00 ,  G02B27/20

CPC classification number: H01J65/04 ,  H01J61/025

Abstract: In a light source device provided with a light emission tube in which a light emitting element is enclosed and at least one laser oscillator part for radiating a laser beam towards said light emission tube, for focusing a beam within a light emission tube with a large solid angle and for preventing that the beam with a high energy density impinges upon the wall of the light emission tube, the light emission tube has a tube wall, part of which is made to function as a focusing means, or the light emission tube has a focusing means at the inner surface thereof.

Abstract translation: 在设置有发光元件被封闭的发光管的光源装置中，以及至少一个用于向所述发光管照射激光束的激光振荡器部分，用于将光束聚焦在具有大固体的发光管内 角度并且为了防止具有高能量密度的光束照射在发光管的壁上，发光管具有管壁，其一部分被用作聚焦装置，或者发光管具有 聚焦装置在其内表面。

公开(公告)号：US08242695B2

公开(公告)日：2012-08-14

申请号：US12662352

申请日：2010-04-13

Applicant: Taku Sumitomo ,  Yukio Yasuda ,  Toshio Yokota

Inventor： Taku Sumitomo ,  Yukio Yasuda ,  Toshio Yokota

IPC: H01J17/20 ,  H01J17/30 ,  H05G2/00

CPC classification number: H01J65/04 ,  H01J61/025 ,  H01J61/18

Abstract: An laser driven light source comprises a bulb that encloses a discharge medium, a laser beam unit for emitting a laser beam, wherein the laser beam is focused in the bulb for generating a discharge, and a beam shield element that is provided in the bulb to shield peripheral devices from the laser beam, which passes through the discharge generated in the bulb.

Abstract translation: 激光驱动光源包括封装放电介质的灯泡，用于发射激光束的激光束单元，其中激光束聚焦在用于产生放电的灯泡中，以及设置在灯泡中的光束屏蔽元件 屏蔽通过在灯泡中产生的放电的激光束的外围设备。

公开(公告)号：US20080100147A1

公开(公告)日：2008-05-01

申请号：US11870133

申请日：2007-10-10

Applicant: Yukio Yasuda ,  Atsunobu Kawamoto ,  Shinsuke Goudo

Inventor： Yukio Yasuda ,  Atsunobu Kawamoto ,  Shinsuke Goudo

IPC: H01H9/54

CPC classification number: H01L25/18 ,  H01L27/0259 ,  H01L2224/05554 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2225/06568 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H02M7/003 ,  Y10T307/944 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: The power semiconductor device of the present invention is provided with a conductive board 3, a switching element 1 mounted on the conductive board 3 and electrically connected thereto and an integrated circuit 4 mounted on the conductive board 3 at a distance from the switching element 1 and electrically connected thereto. The switching element 1 turns ON/OFF a connection between first and second main electrodes in response to a control signal inputted to a control electrode. The integrated circuit 4 has a control circuit 72 which controls ON/OFF of the switching element 1 and a back side voltage detection element 31 which detects a voltage of the back side of the integrated circuit 4.

Abstract translation: 本发明的功率半导体装置设置有导电板3，安装在导电板3上并与其电连接的开关元件1和安装在导电板3上距离开关元件1一定距离的集成电路4，以及 电连接到其上。 开关元件1响应于输入到控制电极的控制信号而使第一和第二主电极之间的连接接通/断开。 集成电路4具有控制开关元件1的导通/截止的控制电路72和检测集成电路4的背侧的电压的背面电压检测元件31。

公开(公告)号：US07074676B2

公开(公告)日：2006-07-11

申请号：US10468738

申请日：2002-02-13

Applicant: Hiroshi Iwata ,  Akihide Shibata ,  Nobutoshi Arai ,  Takayuki Ogura ,  Kouichirou Adachi ,  Seizo Kakimoto ,  Yukio Yasuda ,  Shigeaki Zaima ,  Akira Sakai

Inventor： Hiroshi Iwata ,  Akihide Shibata ,  Nobutoshi Arai ,  Takayuki Ogura ,  Kouichirou Adachi ,  Seizo Kakimoto ,  Yukio Yasuda ,  Shigeaki Zaima ,  Akira Sakai

IPC: H01L21/8247 ,  H01L29/788

CPC classification number: B82Y10/00 ,  H01L21/28273 ,  H01L27/115 ,  H01L29/42332 ,  Y10S438/962

Abstract: A memory film operable at a low voltage and a method of manufacturing the memory film; the method, comprising the steps of forming a first insulation film (112) on a semiconductor substrate (111) forming a first electrode, forming a first conductor film (113) on the first insulation film (112), forming a second insulation film (112B) on the surface of the first conductor film (113), forming a third insulation film containing conductor particulates (114, 115) on the second insulation film (112B), and forming a second conductor film forming a second electrode on the third insulation film.

Abstract translation: 以低电压工作的记忆膜和制造该记忆膜的方法; 该方法包括以下步骤：在形成第一电极的半导体衬底（111）上形成第一绝缘膜（112），在第一绝缘膜（112）上形成第一导体膜（113），形成第二绝缘膜（ 112B），在第二绝缘膜（112B）上形成包含导体微粒（114,115）的第三绝缘膜，并在第二绝缘膜（112B）上形成第二导电膜，形成第二电极 第三绝缘膜。

公开(公告)号：US06768263B2

公开(公告)日：2004-07-27

申请号：US10281120

申请日：2002-10-28

Applicant: Yoshinori Aiura ,  Yukio Yasuda

Inventor： Yoshinori Aiura ,  Yukio Yasuda

IPC: H01J1706

CPC classification number: G03F7/70016 ,  H01J61/0732 ,  H01J61/0737 ,  H01J61/86

Abstract: A short arc type mercury lamp in which a cathode and an anode are disposed opposite one another inside an arc tube, at least a noble gas and mercury are filled into the arc tube, cathode contains thorium oxide, a cone-shaped part that continues on from a cathode body is formed on the cathode, and a protruding part that continues on from the cone-shaped part is formed, wherein the number of grain boundaries on a straight line that passes through the approximate center of an arbitrary section in the radial direction of the protruding part is at least 0.5 per mm but not more than 100 per mm.

Abstract translation: 一种短弧型水银灯，其中阴极和阳极彼此相对设置在电弧管内，至少有惰性气体和汞被填充到电弧管中，阴极包含氧化钍，继续在其上的锥形部分 从阴极体形成阴极体，并且形成从锥形部分继续的突出部，其中通过在径向上的任意部分的大致中心的直线上的晶界数 的突出部分为每mm至少0.5，但不大于100。

公开(公告)号：US06414855B1

公开(公告)日：2002-07-02

申请号：US09840172

申请日：2001-04-24

Applicant: Yukio Yasuda

Inventor： Yukio Yasuda

IPC: H02M3335

CPC classification number: H02M1/00 ,  H01L2924/0002 ,  H02M2001/0009 ,  Y10S323/901 ,  H01L2924/00

Abstract: A power converter individually comprises a first semiconductor device and a second semiconductor device . In the first semiconductor device , a power conversion element such as an IGBT , Zener diodes , a waveform shaping circuit , a heating cutoff circuit and a protective element are formed on the same chip employing a p-type silicon substrate. In the second semiconductor device , a Schmidt circuit , a power supply circuit , a high voltage detection circuit , a protective element , a logic gate and an output circuit formed by a pnp transistor are formed on the same chip employing a p-type silicon substrate. Thus, a power converter capable of reducing the circuit scale as a whole is obtained.

Abstract translation: 功率转换器分别包括第一半导体器件2和第二半导体器件3。 在第一半导体器件<2>中，诸如IGBT <19>的电力转换元件，齐纳二极管<20,21>，波形整形电路30，加热截止电路31和保护元件14 >使用p型硅衬底在同一芯片上形成。 在第二半导体器件<3>中，施密特电路9，电源电路10，高压检测电路11，保护元件13，逻辑门16和输出电路 由pnp晶体管17形成，使用p型硅衬底在同一芯片上形成。 因此，可以获得能够整体减小电路规模的电力转换器。

公开(公告)号：US5920152A

公开(公告)日：1999-07-06

申请号：US938749

申请日：1997-09-26

Applicant: Yukio Yasuda ,  Masanori Sugihara ,  Shouichi Mayama

Inventor： Yukio Yasuda ,  Masanori Sugihara ,  Shouichi Mayama

IPC: H01J61/16 ,  G03F7/20 ,  H01J61/073 ,  H01J61/12 ,  H01J61/86 ,  H01J61/88 ,  H01J17/04

CPC classification number: G03F7/70016 ,  H01J61/0732 ,  H01J61/12 ,  H01J61/86

Abstract: A mercury lamp of the short arc type with high radiant efficiency which satisfies the demand for an increase of the radiation amount of the light source, by suppressing the motion of the bright spot in the vicinity of the cathode tip suppresses the flickering of the irradiance and thus increases the arc stability, is achieved in a mercury lamp of the short arc type in which within an arc tube mercury and at least one rare gas are encapsulated, by either at least Ar being filled as the rare gas at an filling pressure of from 1 to 8 atm, and by the current density in the tip area of the cathode being 10 to 250 A/mm.sup.2 or alternatively, at least Kr being filled as the rare gas at an filling pressure of from 1 to 8 atm, and the current density in the tip area of the cathode being 10 to 310 A/mm.sup.2 during operation of the lamp. By operation of the above described lamp in a vertical orientation with the anode positioned above the cathode a further contribution to the attainment of the noted advantages is achieved.

Abstract translation: 通过抑制阴极尖端附近的亮点的运动，能够满足对光源的照射量的增加的要求的具有高辐射效率的短弧型的水银灯抑制辐照度的闪烁， 从而提高了电弧稳定性，在短弧型汞灯中，在电弧管汞管和至少一种稀有气体被封装的情况下，通过至少Ar以填充压力从而填充稀土气体来实现 1至8个大气压，并且阴极的尖端区域中的电流密度为10至250A / mm 2，或者至少Kr以1至8atm的填充压力填充为稀有气体，并且电流 在灯的操作期间，阴极的尖端区域的密度为10〜310A / mm2。 通过在阳极位于阴极上方的垂直方向上操作上述灯，实现了对所述优点的实现的进一步贡献。

公开(公告)号：US5889406A

公开(公告)日：1999-03-30

申请号：US949623

申请日：1997-10-14

Applicant: Masahiro Yamamoto ,  Yukio Yasuda

Inventor： Masahiro Yamamoto ,  Yukio Yasuda

IPC: G01R27/26 ,  G01R31/06 ,  G01R27/28

CPC classification number: G01R27/2611 ,  G01R31/06

Abstract: The inductance-change detection apparatus comprises an inductance-change converter that converts inductance-change in coils into voltage to output, a reference-voltage generator that generates and outputs a predetermined reference voltage, a frequency characteristic adder that adds a frequency characteristic similar to that of the converted voltage converted by the inductance-change converter to the reference voltage, a reference-voltage compensator that varies and compensates the frequency spectrum of the reference voltage containing the added frequency characteristic, in parallel in the direction of amplitude, corresponding to a parallel variation of the frequency spectrum of the converted voltage in the direction of amplitude, and an inductance-change detector that compares the converted voltage with the compensated reference voltage to detect inductance changes in the coils.

Abstract translation: 电感变化检测装置包括将线圈中的电感变化转换成电压输出的电感变化转换器，产生并输出预定参考电压的基准电压发生器，添加与之相似的频率特性的频率特性加法器 由电感变化转换器转换的转换电压转换为参考电压;参考电压补偿器，其对包含相加频率特性的参考电压的频谱在幅度方向上并行地对应于并行 转换后的电压在振幅方向的频谱的变化，以及电感变化检测器，其将转换的电压与补偿的参考电压进行比较，以检测线圈中的电感变化。

公开(公告)号：US5652520A

公开(公告)日：1997-07-29

申请号：US554717

申请日：1995-11-07

Applicant: Atsunobu Kawamoto ,  Yukio Yasuda

Inventor： Atsunobu Kawamoto ,  Yukio Yasuda

IPC: F02D45/00 ,  F02P17/12 ,  F02P17/00

CPC classification number: F02P17/12 ,  F02P2017/125

Abstract: An internal combustion engine misfire sensing circuit comprises an ion current sensing circuit for sensing an ion current in the combustion chamber of an internal combustion engine, a current/voltage conversion circuit for converting the sensed ion current into a voltage and a waveform shaping circuit for shaping the waveform of an output of the current/voltage conversion circuit. The waveform shaping circuit includes a second comparator for comparing a voltage of a third capacitor with first and second reference voltages for outputting a misfire sensing signal and a capacitor charging/discharging circuit for charging the third capacitor in response to the rising up of an output of the current/voltage conversion circuit and discharging the third capacitor based on the input of the misfire sensing signal. With this arrangement a misfire can be sensed even in an internal combustion engine having multiple cylinders, the number of parts can be reduced as well as the area of circuits can be reduced.

Abstract translation: 内燃机失火检测电路包括用于感测内燃机的燃烧室中的离子电流的离子电流检测电路，用于将感测的离子电流转换为电压的电流/电压转换电路和用于成形的波形整形电路 电流/电压转换电路的输出的波形。 波形整形电路包括：第二比较器，用于比较第三电容器的电压与用于输出失火检测信号的第一和第二参考电压;以及用于响应于第三电容器的输出的上升而使第三电容器充电的电容器充电/放电电路 电流/电压转换电路，并基于失火感测信号的输入放电第三电容器。 利用这种布置，即使在具有多个气缸的内燃机中也可以感测到失火，可以减少部件的数量以及可以减小电路的面积。