公开(公告)号：US4791719A

公开(公告)日：1988-12-20

申请号：US1440

申请日：1987-01-08

申请人： Tetsuo Kobayashi ,  Yukihisa Tsukada ,  Shinji Narishige ,  Shinichi Hara

发明人： Tetsuo Kobayashi ,  Yukihisa Tsukada ,  Shinji Narishige ,  Shinichi Hara

IPC分类号： G11B5/31 ,  G11B5/127

CPC分类号： G11B5/3163 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49062

摘要： A first magnetic layer is formed upon a non-magnetic substrate, a gap layer is formed upon the first magnetic layer, a conductor coil covered with an insulation layer is formed upon the gap layer, a second magnetic layer is formed upon the gap layer and the insulation layer, a magnetic gap being formed between the first and second magnetic layers at a front portion facing a recording medium, and the second magnetic layer being connected to the first magnetic layer at a back portion. After forming a mask made of metal oxide upon the second magnetic layer, the second magnetic layer, the gap layer, and the first magnetic layer are formed into a predetermined shape respectively at the tip portion by dry etching. Thus, a high performance thin-film magnetic head having the same widths for the first and second magnetic layers is obtained.

摘要翻译： 在非磁性基板上形成第一磁性层，在第一磁性层上形成间隙层，在间隙层上形成被绝缘层覆盖的导体线圈，在间隙层上形成第二磁性层， 所述绝缘层在形成在所述第一和第二磁性层之间的面向记录介质的前部处形成磁隙，所述第二磁性层在后部连接到所述第一磁性层。 在第二磁性层上形成由金属氧化物制成的掩模之后，通过干蚀刻将第二磁性层，间隙层和第一磁性层分别形成为尖端部分的预定形状。 因此，获得了对于第一和第二磁性层具有相同宽度的高性能薄膜磁头。

公开(公告)号：US5109311A

公开(公告)日：1992-04-28

申请号：US700095

申请日：1991-05-06

申请人： Masanobu Hanazono ,  Shinji Narishige ,  Yutaka Sugita ,  Hiroshi Fukui ,  Hirotsugu Fukuoka ,  Hajime Aoi ,  Masayuki Katsumoto ,  Takuji Ogawa ,  Jun Naruse ,  Yokuo Saitoh

发明人： Masanobu Hanazono ,  Shinji Narishige ,  Yutaka Sugita ,  Hiroshi Fukui ,  Hirotsugu Fukuoka ,  Hajime Aoi ,  Masayuki Katsumoto ,  Takuji Ogawa ,  Jun Naruse ,  Yokuo Saitoh

IPC分类号： C09D5/23 ,  C09D7/12 ,  G11B5/012 ,  G11B5/02 ,  G11B5/09 ,  G11B5/31 ,  G11B5/82

CPC分类号： G11B5/09 ,  G11B5/012 ,  G11B5/3116 ,  G11B5/82

摘要： This invention provides a magnetic disk device having a total memory capacity of 30 giga bytes or more, or more desirably 30.about.40 giga bytes. The magnetic disk used in this magnetic disk device has a plane record density of 45.about.80 mega bits per square inch. The thin film magnetic head has a pole thickness (P.sub.T), a magnetic flux density (B.sub.s), a magnetic gap depth (G.sub.d) and a record wavelenth (.lambda.) which satisfy the formulaG.sub.d .ltoreq.0.13 P.sub.T B.sub.s (.lambda.+4.3)-2.1.The magnetic disk rotation means rotate the magnetic disk at a speed of 24 m per second or more.

摘要翻译： 本发明提供了一种总存储容量为30千兆字节或更多，或更优选为30个差异40千兆字节的磁盘装置。 在该磁盘装置中使用的磁盘的平面记录密度为每平方英寸80万比特的平均记录密度。 薄膜磁头具有满足公式Gd

公开(公告)号：US4780781A

公开(公告)日：1988-10-25

申请号：US779469

申请日：1985-09-24

申请人： Masaaki Sano ,  Katsuya Mitsuoka ,  Makoto Morijiri ,  Shinji Narishige ,  Masanobu Hanazono ,  Toshihiro Yoshida

发明人： Masaaki Sano ,  Katsuya Mitsuoka ,  Makoto Morijiri ,  Shinji Narishige ,  Masanobu Hanazono ,  Toshihiro Yoshida

IPC分类号： C22C19/07 ,  C25D3/56 ,  C25D7/00 ,  G11B5/31 ,  H01F10/16 ,  H01F41/26 ,  G11B5/147

CPC分类号： G11B5/31

摘要： A thin film magnetic head comprising a lower magnetic film, an upper magnetic film which is formed over the lower magnetic film and in which one end is come into contact with one end of the lower magnetic film and the other end faces the other end of the lower magnetic film through a magnetic gap and thereby forming a magnetic circuit which has a magnetic gap in a part thereof, together with the lower magnetic film, and a conductor coil forming a coil of a predetermined number of turns and passing between the upper and lower magnetic films and crossing the magnetic circuit. Each of the upper and lower magnetic films is formed of a Co-Ni-Fe ternary alloy having a face-centered cubic crystal structure. Also, uniaxial anisotropy is alternately and perpendicularly given in every layer of a predetermined thickness stacked in the direction of thickness of the film.

摘要翻译： 一种薄膜磁头，包括下部磁性膜，上部磁性膜，形成在下部磁性膜的上方，并且一端与下部磁性膜的一端接触，另一端面向下部磁性膜的另一端 通过磁隙下降磁性膜，从而形成与下部磁性膜一起形成有磁性间隙的磁路，以及形成规定圈数的线圈的导体线圈，并且通过上下 磁性膜并穿过磁路。 上下磁性膜由具有面心立方晶体结构的Co-Ni-Fe三元合金形成。 另外，在膜的厚度方向堆叠的规定厚度的各层中交替地，垂直地赋予单轴各向异性。

公开(公告)号：US4516180A

公开(公告)日：1985-05-07

申请号：US378176

申请日：1982-05-14

申请人： Shinji Narishige ,  Tsuneo Yoshinari ,  Mituo Sato ,  Masayuki Takagi ,  Toshihiro Yoshida

发明人： Shinji Narishige ,  Tsuneo Yoshinari ,  Mituo Sato ,  Masayuki Takagi ,  Toshihiro Yoshida

IPC分类号： G11B5/31 ,  G11B5/16

CPC分类号： G11B5/31

摘要： A thin film magnetic head comprises an upper magnetic film and a lower magnetic film which cooperate to constitute a magnetic circuit including a magnetic gap, and a coil conductor film constituting a coil having a predetermined number of turns and extending between the upper and the lower magnetic films to intersect the magnetic circuit. The upper magnetic film is composed of a laminate constituted by magnetic thin film layers and non-magnetic thin film layers stacked alternately with each other. An electrically insulating layer formed of a photo-sensitive resin is interposed between the upper magnetic film and the coil conductor film.

摘要翻译： 一种薄膜磁头，包括上部磁性膜和下部磁性膜，它们协调构成包括磁隙的磁路，以及构成具有预定匝数并在上部和下部磁性之间延伸的线圈的线圈导体膜 电影与磁路相交。 上磁性膜由由相互交替堆叠的磁性薄膜层和非磁性薄膜层构成的层叠体构成。 在上部磁性膜和线圈导体膜之间插入由光敏树脂形成的电绝缘层。

公开(公告)号：US06275360B1

公开(公告)日：2001-08-14

申请号：US09159752

申请日：1998-09-24

申请人： Kazuhiro Nakamoto ,  Takashi Kawabe ,  Tetsuo Kobayashi ,  Shun-ichi Marumi ,  Shinji Narishige ,  Takao Imagawa

发明人： Kazuhiro Nakamoto ,  Takashi Kawabe ,  Tetsuo Kobayashi ,  Shun-ichi Marumi ,  Shinji Narishige ,  Takao Imagawa

IPC分类号： G11B539

CPC分类号： G11B5/3967 ,  G11B5/11 ,  G11B5/3109 ,  G11B5/3912

摘要： A read-write head is capable of suppressing fluctuation on a reproduced waveform caused by repetition of a writing and reading operation, and is capable suppressing noise appearing in the reproduced waveform just after a writing operation is carried out. The read-write head has an upper magnetic core, an upper shield also serving as an lower magnetic core, a lower shield and a magnetoresistive film arranged between the upper shield and the lower shield. The upper shield has a soft magnetic film having a magnitude of anisotropy field of 5 to 30 Oe, or is a multilayer film composed of a high saturation magnetic flux density film and a negative magneto-striction film. The lower shield has a soft magnetic film having a magnitude of anisotropy field of 5 to 30 Oe.

摘要翻译： 读写头能够抑制由重复写入和读取操作引起的再现波形的波动，并且能够在刚刚执行写入操作之后抑制再现波形中出现的噪声。 读写头具有上磁芯，也可用作下磁芯的上屏蔽，下屏蔽和布置在上屏蔽和下屏蔽之间的磁阻膜。 上屏蔽具有各向异性磁场强度为5〜30Oe的软磁性膜，或者是由高饱和磁通密度膜和负磁致密膜构成的多层膜。 下屏蔽具有各向异性磁场强度为5〜30Oe的软磁性膜。

公开(公告)号：US5471358A

公开(公告)日：1995-11-28

申请号：US851927

申请日：1992-03-16

申请人： Shigeru Tadokoro ,  Shinji Narishige ,  Hiroaki Koyanagi ,  Tetsuo Kobayashi

发明人： Shigeru Tadokoro ,  Shinji Narishige ,  Hiroaki Koyanagi ,  Tetsuo Kobayashi

IPC分类号： G11B5/31 ,  G11B5/39 ,  G11B5/147

CPC分类号： G11B5/3932 ,  G11B5/399 ,  G11B5/3113

摘要： In a magnetoresistive head, a domain suppressing layer is formed under each of opposite ends of a magnetoresistive film. The domain suppressing layer is composed of a first ferromagnetic film, an antiferromagnetic film and a second ferromagnetic film which are laminated one over another in this order. Since the spin distribution of the antiferromagnetic film is transmitted to the magnetoresistive film via the second ferromagnetic film, a stable longitudinal bias magnetic field can be achieved, irrespective of the degree of contamination of the surface of the ferromagnetic film.

摘要翻译： 在磁阻头中，在磁阻膜的相对端的每一端形成畴抑制层。 畴抑制层由依次叠层的第一铁磁性膜，反铁磁膜和第二铁磁性膜构成。 由于反铁磁膜的自旋分布经由第二铁磁膜传输到磁阻膜，所以可以实现稳定的纵向偏置磁场，而不管铁磁膜表面的污染程度如何。

公开(公告)号：US4943883A

公开(公告)日：1990-07-24

申请号：US266080

申请日：1988-11-02

申请人： Masaaki Sano ,  Takao Imagawa ,  Kouichi Nishioka ,  Shinji Narishige ,  Masanobu Hanazono ,  Takashi Onishi ,  Toshihiro Yoshida

发明人： Masaaki Sano ,  Takao Imagawa ,  Kouichi Nishioka ,  Shinji Narishige ,  Masanobu Hanazono ,  Takashi Onishi ,  Toshihiro Yoshida

IPC分类号： G11B5/31

CPC分类号： G11B5/3109

摘要： A thin film magnetic head provided with a first and a second thin film made of a magnetic material, disposed so as to form a closed magnetic circuit; and an intermediate film made of a non-magnetic material, disposed between the first and the second thin films so as to form a magnetic gap at a part of the magnetic circuit; wherein at least one of the first and the second thin films is made of a quaternary amorphous magnetic alloy, whose principal component is cobalt and which contains hafnium, tantalum and palladium.

摘要翻译： 一种薄膜磁头，其设置有由磁性材料制成的第一和第二薄膜，被设置成形成闭合磁路; 以及由非磁性材料制成的中间膜，设置在第一和第二薄膜之间，以在磁路的一部分形成磁隙; 其中所述第一和第二薄膜中的至少一个薄膜由主要成分为钴并含有铪，钽和钯的四元非晶磁性合金制成。

公开(公告)号：US4698273A

公开(公告)日：1987-10-06

申请号：US918333

申请日：1986-10-14

申请人： Matahiro Komuro ,  Yuzo Kozono ,  Takeshi Yasuda ,  Shinji Narishige ,  Masanobu Hanazono ,  Tetsuro Kuroda

发明人： Matahiro Komuro ,  Yuzo Kozono ,  Takeshi Yasuda ,  Shinji Narishige ,  Masanobu Hanazono ,  Tetsuro Kuroda

IPC分类号： H01F10/10 ,  B32B15/01 ,  C23C14/06 ,  F16L39/00 ,  G11B5/66 ,  H01F10/18 ,  H01F10/30 ,  H01F10/32 ,  H01F41/14 ,  H01F41/18 ,  C23C14/14

CPC分类号： B82Y25/00 ,  B32B15/01 ,  F16L39/00 ,  G11B5/66 ,  H01F10/18 ,  H01F10/32 ,  Y10S428/928 ,  Y10T428/12632 ,  Y10T428/12958

摘要： The film is composed of an alternate lamination of unit iron layers and unit layers of ferromagnetic iron compound such as Fe.sub.3 Al, Fe.sub.3 Si, Fe.sub.3 Ge and Fe.sub.3 Ga. The thickness of the both unit layers is less than 70 .ANG.. The film has a high saturation magnetization more than 230 emu/g and a high thermal stability so that the film is particularly applicable to a magnetic head core.

摘要翻译： 该膜由铁铁层和Fe3Al，Fe3Si，Fe3Ge和Fe3Ga等铁磁性铁化合物的单位层的交替叠层构成。 两个单元层的厚度小于70安培。 该膜具有高于230emu / g的高饱和磁化强度和高热稳定性，因此该膜特别适用于磁头芯。

公开(公告)号：US4623439A

公开(公告)日：1986-11-18

申请号：US658161

申请日：1984-10-05

申请人： Katsuya Mitsuoka ,  Shinji Narishige ,  Akira Kumagai ,  Masaaki Sano ,  Shinichi Hara ,  Masanobu Hanazono

发明人： Katsuya Mitsuoka ,  Shinji Narishige ,  Akira Kumagai ,  Masaaki Sano ,  Shinichi Hara ,  Masanobu Hanazono

IPC分类号： C22C19/00 ,  C23C14/14 ,  C23C14/24 ,  G11B5/31 ,  H01F10/16 ,  H01F41/14 ,  C23C14/00

CPC分类号： C23C14/24 ,  C23C14/14 ,  H01F41/14

摘要： A magnetic thin film of Ni-Co-Fe ternary alloy containing at most 75% by weight of Ni, 10 to 90% by weight of Co, and at most 15% by weight of Fe, which shows the magnetostriction constant between +2.times.10.sup.-6 to -2.times.10.sup.-6 and shows a uniaxial magnetic anisotropy of at most 10 Oe.The film is formed through the vacuum evaporation of the alloy during which two orthogonal external magnetic fields, directions x and y, are alternately applied over the deposition surface of a substrate.The film is suitable for a core material of a thin film magnetic head with a higher recording density.

摘要翻译： Ni-Co-Fe三元合金的磁性薄膜含有至多75重量％的Ni，10至90重量％的Co和至多15重量％的Fe，其显示出±2×10 -3摩尔的磁致伸缩常数， 6〜-2×10 -6，显示出至多10Oe的单轴磁各向异性。 通过合金的真空蒸发形成膜，在该过程中两个正交的外部磁场方向x和y交替施加在基板的沉积表面上。 该膜适用于具有较高记录密度的薄膜磁头的芯材。

公开(公告)号：US4503394A

公开(公告)日：1985-03-05

申请号：US390882

申请日：1982-06-22

申请人： Kanji Kawakami ,  Shinji Narishige ,  Masahide Suenaga

发明人： Kanji Kawakami ,  Shinji Narishige ,  Masahide Suenaga

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01L43/00 ,  H01L43/08 ,  G01R33/06 ,  G11B5/12

CPC分类号： G11B5/3935 ,  G01R33/09 ,  G11B5/3964 ,  G11B5/3987 ,  G11B5/399 ,  H01L43/00 ,  H01L43/08

摘要： A magnetoelectric conversion element comprises a magnetoresistive effect material having a closed domain structure, a pair of contacts for supply of current flowing through the magnetoresistive effect material, and a bias electrode disposed between the contacts for biasing the direction of the current flow. The bias electrode is disposed so that the respective angles of intersection between the directions of current flow through different magnetic domains of the magnetoresistive effect material biased by the bias electrode and the directions of spontaneous magnetization biased by an external magnetic field are both increased or decreased.

摘要翻译： 磁电转换元件包括具有封闭畴结构的磁阻效应材料，用于供应流过磁阻效应材料的电流的一对触点，以及设置在触点之间以偏置电流方向的偏置电极。 偏置电极被设置为使得通过由偏置电极偏置的磁阻效应材料的不同磁畴的电流方向和由外部磁场偏置的自发磁化方向之间的相互交叉的角度的相互交叉的角度都增加或减少。