公开(公告)号：US4943883A

公开(公告)日：1990-07-24

申请号：US266080

申请日：1988-11-02

申请人： Masaaki Sano ,  Takao Imagawa ,  Kouichi Nishioka ,  Shinji Narishige ,  Masanobu Hanazono ,  Takashi Onishi ,  Toshihiro Yoshida

发明人： Masaaki Sano ,  Takao Imagawa ,  Kouichi Nishioka ,  Shinji Narishige ,  Masanobu Hanazono ,  Takashi Onishi ,  Toshihiro Yoshida

IPC分类号： G11B5/31

CPC分类号： G11B5/3109

摘要： A thin film magnetic head provided with a first and a second thin film made of a magnetic material, disposed so as to form a closed magnetic circuit; and an intermediate film made of a non-magnetic material, disposed between the first and the second thin films so as to form a magnetic gap at a part of the magnetic circuit; wherein at least one of the first and the second thin films is made of a quaternary amorphous magnetic alloy, whose principal component is cobalt and which contains hafnium, tantalum and palladium.

摘要翻译： 一种薄膜磁头，其设置有由磁性材料制成的第一和第二薄膜，被设置成形成闭合磁路; 以及由非磁性材料制成的中间膜，设置在第一和第二薄膜之间，以在磁路的一部分形成磁隙; 其中所述第一和第二薄膜中的至少一个薄膜由主要成分为钴并含有铪，钽和钯的四元非晶磁性合金制成。

公开(公告)号：US4939610A

公开(公告)日：1990-07-03

申请号：US252603

申请日：1988-10-03

申请人： Shinji Narishige ,  Masaaki Sano ,  Kouichi Nishioka ,  Takao Imagawa ,  Masanobu Hanazono ,  Tetsuo Kobayashi ,  Toshihiro Yoshida

发明人： Shinji Narishige ,  Masaaki Sano ,  Kouichi Nishioka ,  Takao Imagawa ,  Masanobu Hanazono ,  Tetsuo Kobayashi ,  Toshihiro Yoshida

IPC分类号： G11B5/31 ,  H01F41/18

CPC分类号： H01F41/18 ,  G11B5/31

摘要： A thin film magnetic head is disclosed which includes a substrate, a first magnetic core disposed on the substrate, a second magnetic core forming a magnetic path in conjunction with the first magnetic core, a conductor coil wound in the magnetic path and a gap formed between ends of the first magnetic core and the second magnetic core. At least one of the first magnetic core and the second magnetic core includes a thin film of a cobalt alloy. The cobalt alloy includes 20-70 atomic percent of cobalt, 20-60 atomic percent of nickel, 12-30 atomic percent of iron and 5-32 atomic percent of palladium.

摘要翻译： 公开了一种薄膜磁头，其包括基板，设置在基板上的第一磁芯，与第一磁芯一起形成磁路的第二磁芯，缠绕在磁路中的导体线圈和形成在磁路之间的间隙 第一磁芯和第二磁芯的端部。 第一磁芯和第二磁芯中的至少一个包括钴合金薄膜。 钴合金包括20-70原子％的钴，20-60原子％的镍，12-30原子％的铁和5-32原子百分比的钯。

公开(公告)号：US4780781A

公开(公告)日：1988-10-25

申请号：US779469

申请日：1985-09-24

申请人： Masaaki Sano ,  Katsuya Mitsuoka ,  Makoto Morijiri ,  Shinji Narishige ,  Masanobu Hanazono ,  Toshihiro Yoshida

发明人： Masaaki Sano ,  Katsuya Mitsuoka ,  Makoto Morijiri ,  Shinji Narishige ,  Masanobu Hanazono ,  Toshihiro Yoshida

IPC分类号： C22C19/07 ,  C25D3/56 ,  C25D7/00 ,  G11B5/31 ,  H01F10/16 ,  H01F41/26 ,  G11B5/147

CPC分类号： G11B5/31

摘要： A thin film magnetic head comprising a lower magnetic film, an upper magnetic film which is formed over the lower magnetic film and in which one end is come into contact with one end of the lower magnetic film and the other end faces the other end of the lower magnetic film through a magnetic gap and thereby forming a magnetic circuit which has a magnetic gap in a part thereof, together with the lower magnetic film, and a conductor coil forming a coil of a predetermined number of turns and passing between the upper and lower magnetic films and crossing the magnetic circuit. Each of the upper and lower magnetic films is formed of a Co-Ni-Fe ternary alloy having a face-centered cubic crystal structure. Also, uniaxial anisotropy is alternately and perpendicularly given in every layer of a predetermined thickness stacked in the direction of thickness of the film.

摘要翻译： 一种薄膜磁头，包括下部磁性膜，上部磁性膜，形成在下部磁性膜的上方，并且一端与下部磁性膜的一端接触，另一端面向下部磁性膜的另一端 通过磁隙下降磁性膜，从而形成与下部磁性膜一起形成有磁性间隙的磁路，以及形成规定圈数的线圈的导体线圈，并且通过上下 磁性膜并穿过磁路。 上下磁性膜由具有面心立方晶体结构的Co-Ni-Fe三元合金形成。 另外，在膜的厚度方向堆叠的规定厚度的各层中交替地，垂直地赋予单轴各向异性。

公开(公告)号：US4623439A

公开(公告)日：1986-11-18

申请号：US658161

申请日：1984-10-05

申请人： Katsuya Mitsuoka ,  Shinji Narishige ,  Akira Kumagai ,  Masaaki Sano ,  Shinichi Hara ,  Masanobu Hanazono

发明人： Katsuya Mitsuoka ,  Shinji Narishige ,  Akira Kumagai ,  Masaaki Sano ,  Shinichi Hara ,  Masanobu Hanazono

IPC分类号： C22C19/00 ,  C23C14/14 ,  C23C14/24 ,  G11B5/31 ,  H01F10/16 ,  H01F41/14 ,  C23C14/00

CPC分类号： C23C14/24 ,  C23C14/14 ,  H01F41/14

摘要： A magnetic thin film of Ni-Co-Fe ternary alloy containing at most 75% by weight of Ni, 10 to 90% by weight of Co, and at most 15% by weight of Fe, which shows the magnetostriction constant between +2.times.10.sup.-6 to -2.times.10.sup.-6 and shows a uniaxial magnetic anisotropy of at most 10 Oe.The film is formed through the vacuum evaporation of the alloy during which two orthogonal external magnetic fields, directions x and y, are alternately applied over the deposition surface of a substrate.The film is suitable for a core material of a thin film magnetic head with a higher recording density.

摘要翻译： Ni-Co-Fe三元合金的磁性薄膜含有至多75重量％的Ni，10至90重量％的Co和至多15重量％的Fe，其显示出±2×10 -3摩尔的磁致伸缩常数， 6〜-2×10 -6，显示出至多10Oe的单轴磁各向异性。 通过合金的真空蒸发形成膜，在该过程中两个正交的外部磁场方向x和y交替施加在基板的沉积表面上。 该膜适用于具有较高记录密度的薄膜磁头的芯材。

公开(公告)号：US4698273A

公开(公告)日：1987-10-06

申请号：US918333

申请日：1986-10-14

申请人： Matahiro Komuro ,  Yuzo Kozono ,  Takeshi Yasuda ,  Shinji Narishige ,  Masanobu Hanazono ,  Tetsuro Kuroda

发明人： Matahiro Komuro ,  Yuzo Kozono ,  Takeshi Yasuda ,  Shinji Narishige ,  Masanobu Hanazono ,  Tetsuro Kuroda

IPC分类号： H01F10/10 ,  B32B15/01 ,  C23C14/06 ,  F16L39/00 ,  G11B5/66 ,  H01F10/18 ,  H01F10/30 ,  H01F10/32 ,  H01F41/14 ,  H01F41/18 ,  C23C14/14

CPC分类号： B82Y25/00 ,  B32B15/01 ,  F16L39/00 ,  G11B5/66 ,  H01F10/18 ,  H01F10/32 ,  Y10S428/928 ,  Y10T428/12632 ,  Y10T428/12958

摘要： The film is composed of an alternate lamination of unit iron layers and unit layers of ferromagnetic iron compound such as Fe.sub.3 Al, Fe.sub.3 Si, Fe.sub.3 Ge and Fe.sub.3 Ga. The thickness of the both unit layers is less than 70 .ANG.. The film has a high saturation magnetization more than 230 emu/g and a high thermal stability so that the film is particularly applicable to a magnetic head core.

摘要翻译： 该膜由铁铁层和Fe3Al，Fe3Si，Fe3Ge和Fe3Ga等铁磁性铁化合物的单位层的交替叠层构成。 两个单元层的厚度小于70安培。 该膜具有高于230emu / g的高饱和磁化强度和高热稳定性，因此该膜特别适用于磁头芯。

公开(公告)号：US5109311A

公开(公告)日：1992-04-28

申请号：US700095

申请日：1991-05-06

申请人： Masanobu Hanazono ,  Shinji Narishige ,  Yutaka Sugita ,  Hiroshi Fukui ,  Hirotsugu Fukuoka ,  Hajime Aoi ,  Masayuki Katsumoto ,  Takuji Ogawa ,  Jun Naruse ,  Yokuo Saitoh

发明人： Masanobu Hanazono ,  Shinji Narishige ,  Yutaka Sugita ,  Hiroshi Fukui ,  Hirotsugu Fukuoka ,  Hajime Aoi ,  Masayuki Katsumoto ,  Takuji Ogawa ,  Jun Naruse ,  Yokuo Saitoh

IPC分类号： C09D5/23 ,  C09D7/12 ,  G11B5/012 ,  G11B5/02 ,  G11B5/09 ,  G11B5/31 ,  G11B5/82

CPC分类号： G11B5/09 ,  G11B5/012 ,  G11B5/3116 ,  G11B5/82

摘要： This invention provides a magnetic disk device having a total memory capacity of 30 giga bytes or more, or more desirably 30.about.40 giga bytes. The magnetic disk used in this magnetic disk device has a plane record density of 45.about.80 mega bits per square inch. The thin film magnetic head has a pole thickness (P.sub.T), a magnetic flux density (B.sub.s), a magnetic gap depth (G.sub.d) and a record wavelenth (.lambda.) which satisfy the formulaG.sub.d .ltoreq.0.13 P.sub.T B.sub.s (.lambda.+4.3)-2.1.The magnetic disk rotation means rotate the magnetic disk at a speed of 24 m per second or more.

摘要翻译： 本发明提供了一种总存储容量为30千兆字节或更多，或更优选为30个差异40千兆字节的磁盘装置。 在该磁盘装置中使用的磁盘的平面记录密度为每平方英寸80万比特的平均记录密度。 薄膜磁头具有满足公式Gd

公开(公告)号：US4971896A

公开(公告)日：1990-11-20

申请号：US280828

申请日：1988-12-07

申请人： Takashi Kawabe ,  Ataru Kobayashi ,  Moriaki Fuyama ,  Makoto Morijiri ,  Eiji Ashida ,  Masatoshi Tsuchiya ,  Tetsuya Okai ,  Masanobu Hanazono ,  Shinichi Hara ,  Shinji Narishige ,  Hiroshi Ikeda

发明人： Takashi Kawabe ,  Ataru Kobayashi ,  Moriaki Fuyama ,  Makoto Morijiri ,  Eiji Ashida ,  Masatoshi Tsuchiya ,  Tetsuya Okai ,  Masanobu Hanazono ,  Shinichi Hara ,  Shinji Narishige ,  Hiroshi Ikeda

IPC分类号： G03F7/00 ,  G11B5/31

CPC分类号： G11B5/3163 ,  G03F7/0035 ,  Y10S430/165

摘要： A method of forming a thin film pattern on a base having a step portion. This method comprises a first step of forming a thin film of given material on the base, a second step of forming a predetermined pattern of a first photoresist film on said thin film at one of a first portion including a lower part of the step portion and a second portion including an upper part of the step portion, a third step of forming a predetermined pattern of a second photoresist film on said thin film at the other of the first and second portions and a fourth step of applying ion-milling to said thin film of given material using masks said first and second photoresist film patterns formed on said thin film at the first and second portions.

摘要翻译： 在具有台阶部的基底上形成薄膜图案的方法。 该方法包括在基底上形成给定材料的薄膜的第一步骤，第二步骤，在包括台阶部分的下部的第一部分中的一个上形成在所述薄膜上的第一光致抗蚀剂膜的预定图案，以及 第二部分，包括台阶部分的上部;第三步骤，在所述第一和第二部分中的另一个上在所述薄膜上形成第二光致抗蚀剂膜的预定图案;以及第四步骤，将所述薄片 给定材料的膜使用掩模，所述第一和第二部分形成在所述薄膜上形成的第一和第二光致抗蚀剂图案。

公开(公告)号：US4592801A

公开(公告)日：1986-06-03

申请号：US639012

申请日：1984-08-09

申请人： Shinichi Hara ,  Shinji Narishige ,  Tsuneo Yoshinari ,  Mistuo Sato ,  Katsuya Mitsuoka ,  Makoto Morijiri ,  Masanobu Hanazono ,  Tetsuo Kobayashi

发明人： Shinichi Hara ,  Shinji Narishige ,  Tsuneo Yoshinari ,  Mistuo Sato ,  Katsuya Mitsuoka ,  Makoto Morijiri ,  Masanobu Hanazono ,  Tetsuo Kobayashi

IPC分类号： G11B5/31 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06 ,  C23F1/02

CPC分类号： H01L21/31116 ,  H01L21/302 ,  G11B5/3116 ,  G11B5/3163

摘要： A method of patterning a thin film by dry etching is disclosed in which, in order for a thin alumina film to have a predetermined pattern, the thin alumina film is selectively removed by carrying out the ion beam etching which uses a carbon fluoride gas, while using a photoresist film as a mask.

摘要翻译： 公开了一种通过干蚀刻图案化薄膜的方法，其中为了使氧化铝薄膜具有预定图案，通过进行使用氟化碳气体的离子束蚀刻来选择性地除去薄氧化铝膜，同时 使用光致抗蚀剂膜作为掩模。

公开(公告)号：US4983575A

公开(公告)日：1991-01-08

申请号：US172498

申请日：1988-03-24

申请人： Matahiro Komuro ,  Yuzo Kozono ,  Shinji Narishige ,  Masanobu Hanazono

发明人： Matahiro Komuro ,  Yuzo Kozono ,  Shinji Narishige ,  Masanobu Hanazono

IPC分类号： C23C14/08 ,  C30B23/02 ,  H01L39/12 ,  H01L39/14 ,  H01L39/24

CPC分类号： H01L39/2435 ,  C23C14/087 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  H01L39/126 ,  H01L39/143 ,  H01L39/2432 ,  Y10S505/701 ,  Y10S505/729

摘要： A superconducting thin film obtained by laminating a Cu-O atomic pair film and another oxide film while growing in one direction shows a higher superconducting critical temperature (Tc). By alternately laminating a thin film of A.sub.2 CuO.sub.4 and a thin film of L.sub.2 CuO.sub.4, wherein A and L are different rare earth elements, the Tc can be enhanced remarkably.

摘要翻译： 通过在一个方向生长的同时层叠Cu-O原子对膜和另一氧化物膜而获得的超导薄膜显示出更高的超导临界温度（Tc）。 通过交替层叠A2CuO4的薄膜和L2CuO4的薄膜，其中A和L是不同的稀土元素，可以显着提高Tc。

公开(公告)号：US5229621A

公开(公告)日：1993-07-20

申请号：US888422

申请日：1992-05-26

申请人： Matahiro Komuro ,  Yuzo Kozono ,  Masanobu Hanazono

发明人： Matahiro Komuro ,  Yuzo Kozono ,  Masanobu Hanazono

IPC分类号： H01L27/22

CPC分类号： H01S5/0607 ,  B82Y20/00 ,  G11B11/10543 ,  H01S2301/173 ,  H01S5/34313

摘要： A magnetic semiconductor element formed by joining a magnetostrictive material and a semiconductive material with each other, in which the lattice constant of the semiconductive material is variable by magnetostriction at the interface therebetween; or in which an interface between the two materials is formed by epitaxial growth and the orientation of the magnetostriction is identical to the orientation in which the lattice constant of the semiconductive material varies. Next, a semiconductor laser is so constructed that the interface between the magnetostrictive material and the semiconductive material is disposed in the semiconductor laser and the wavelength and the output of the semiconductor laser are variable by magnetostriction. Further, a method of making a magnetic semiconductor element comprises a step of epitaxially growing the layer of the magnetostrictive material on the layer made of the semiconductive material. Furthermore, a magneto-optical read out head is so constructed that the interface formed by joining the magnetostrictive material and the semiconductive material with each other is disposed in the semiconductor laser constituting a head reading out information recorded in a magnetic recording medium.

摘要翻译： 通过将磁致伸缩材料和半导体材料彼此接合而形成的磁性半导体元件，其中半导体材料的晶格常数可通过它们之间的界面处的磁致伸缩而变化; 或者其中通过外延生长形成两种材料之间的界面，并且磁致伸缩的取向与半导体材料的晶格常数变化的取向相同。 接下来，半导体激光器被构造成使得磁致伸缩材料和半导体材料之间的界面设置在半导体激光器中，半导体激光器的波长和输出通过磁致伸缩而变化。 此外，制造磁性半导体元件的方法包括在由半导体材料制成的层上外延生长磁致伸缩材料层的步骤。 此外，磁光读出头被构造成使得通过将磁致伸缩材料和半导体材料彼此接合而形成的界面设置在半导体激光器中，该半导体激光器构成磁头读出记录在磁记录介质中的信息。