公开(公告)号：US09666401B2

公开(公告)日：2017-05-30

申请号：US14929792

申请日：2015-11-02

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： So Ra Park ,  Yoon Ho Song ,  Jin Woo Jeong ,  Jae Woo Kim ,  Min Sik Shin

IPC: H01J21/10 ,  H01J3/02 ,  H01J29/46 ,  H01J19/24

CPC classification number: H01J3/021 ,  H01J29/46 ,  H01J29/467 ,  H01J2203/0216 ,  H01J2203/0232

Abstract: The present disclosure may provide a field emission device with an enhanced beam convergence. For this, the device may include a gate structure disposed between a cathode electrode and an anode electrode, wherein the gate structure includes a gate electrode and an atomic layer sheet disposed on the gate electrode, the gate electrode facing an emitter and having at least one aperture formed therein.

公开(公告)号：US09646798B2

公开(公告)日：2017-05-09

申请号：US13612129

申请日：2012-09-12

Applicant: Roderick A. Hyde ,  Jordin T. Kare ,  Nathan P. Myhrvold ,  Tony S. Pan ,  Lowell L. Wood, Jr.

Inventor： Roderick A. Hyde ,  Jordin T. Kare ,  Nathan P. Myhrvold ,  Tony S. Pan ,  Lowell L. Wood, Jr.

IPC: H01J3/02

CPC classification number: H01J3/021 ,  H01J2203/0232 ,  Y10T29/49204

Abstract: A device includes an anode, a cathode, and a grid configured to modulate a flow of electrons from the cathode to anode. The grid is made of graphene material which is substantially transparent to the flow of electrons.

公开(公告)号：US20150179386A1

公开(公告)日：2015-06-25

申请号：US14539571

申请日：2014-11-12

Applicant: Elwha LLC

Inventor： Roderick A. Hyde ,  Jordin T. Kare ,  Tony S. Pan ,  Lowell L. Wood, JR.

IPC: H01J29/46 ,  H01J1/48

CPC classification number: H01J29/46 ,  H01J1/48 ,  H01J3/021 ,  H01J45/00 ,  H01J2203/0232

Abstract: A field emission device is configured with a grid that includes nanotubes or nanowires. In one embodiment a cathode, an anode, and a nanotube or nanowire grid are responsive to inputs to produce a potential barrier between the grid and at least one of the cathode and the anode such that a set of electrons from the cathode can tunnel through the potential barrier to produce a net current at the anode.

Abstract translation: 场发射器件配置有包括纳米管或纳米线的栅格。 在一个实施例中，阴极，阳极和纳米管或纳米线栅格响应于输入以在栅极和阴极和阳极中的至少一个之间产生电势势垒，使得来自阴极的一组电子能够穿过 在阳极产生净电流的势垒。

公开(公告)号：US08115187B2

公开(公告)日：2012-02-14

申请号：US12124475

申请日：2008-05-21

Applicant: Brent M. Segal ,  Jonathan W. Ward ,  Thomas Rueckes

Inventor： Brent M. Segal ,  Jonathan W. Ward ,  Thomas Rueckes

IPC: H01L29/02

CPC classification number: H01J21/10 ,  H01J3/021 ,  H01J19/38 ,  H01J2203/0232 ,  Y10S977/742

Abstract: Vacuum microelectronic devices with carbon nanotube films, layers, ribbons and fabrics are provided. The present invention discloses microelectronic vacuum devices including triode structures that include three-terminals (an emitter, a grid and an anode), and also higher-order devices such as tetrodes and pentodes, all of which use carbon nanotubes to form various components of the devices. In certain embodiments, patterned portions of nanotube fabric may be used as grid/gate components, conductive traces, etc. Nanotube fabrics may be suspended or conformally disposed. In certain embodiments, methods for stiffening a nanotube fabric layer are used. Various methods for applying, selectively removing (e.g. etching), suspending, and stiffening vertically- and horizontally-disposed nanotube fabrics are disclosed, as are CMOS-compatible fabrication methods. In certain embodiments, nanotube fabric triodes provide high-speed, small-scale, low-power devices that can be employed in radiation-intensive applications.

Abstract translation: 提供具有碳纳米管膜，层，带和织物的真空微电子器件。 本发明公开了包括三端（发射极，栅极和阳极）的三极管结构的微电子真空装置，以及诸如四极和五极管的高阶器件，所有这些都使用碳纳米管来形成 设备。 在某些实施例中，纳米管织物的图案化部分可以用作栅极/栅极部件，导电迹线等。纳米管织物可以悬挂或保形地设置。 在某些实施例中，使用用于加强纳米管织物层的方法。 公开了用于施加，选择性地去除（例如蚀刻）悬浮和加强垂直和水平布置的纳米管织物的各种方法，以及CMOS兼容的制造方法。 在某些实施例中，纳米管织物三极管提供可用于辐射密集型应用中的高速，小规模，低功率的器件。

公开(公告)号：US08013510B2

公开(公告)日：2011-09-06

申请号：US12317999

申请日：2008-12-31

Applicant: Lin Xiao ,  Liang Liu ,  Kai-Li Jiang ,  Shou-Shan Fan

Inventor： Lin Xiao ,  Liang Liu ,  Kai-Li Jiang ,  Shou-Shan Fan

IPC: H01J19/30

CPC classification number: H01J31/127 ,  H01J3/021 ,  H01J3/027 ,  H01J29/467 ,  H01J2203/0232 ,  H01J2329/463

Abstract: An electron emission device includes a cathode device and a gate electrode. The gate electrode is separated and insulted from the cathode device. The gate electrode includes a carbon nanotube layer having a plurality of spaces. A display device includes a cathode device, an anode device spaced from the cathode electrode and a gate electrode. The gate electrode is disposed between the cathode device and the anode device. The cathode device, the anode device and the gate electrode are separated and insulted from each other. The gate electrode comprises a carbon nanotube layer having a plurality of spaces.

Abstract translation: 电子发射装置包括阴极装置和栅电极。 栅电极与阴极器件分离并被侮辱。 栅电极包括具有多个空间的碳纳米管层。 显示装置包括阴极装置，与阴极电极隔开的阳极装置和栅电极。 栅电极设置在阴极器件和阳极器件之间。 阴极器件，阳极器件和栅电极彼此分离并被侮辱。 栅电极包括具有多个空间的碳纳米管层。

公开(公告)号：US20100007263A1

公开(公告)日：2010-01-14

申请号：US12384232

申请日：2009-04-02

Applicant: Yang Wei ,  Peng Liu ,  Liang Liu ,  Shou-Shan Fan

Inventor： Yang Wei ,  Peng Liu ,  Liang Liu ,  Shou-Shan Fan

IPC: H01J1/02

CPC classification number: H01J3/021 ,  H01J29/467 ,  H01J29/481 ,  H01J31/127 ,  H01J2201/30469 ,  H01J2203/0232 ,  H01J2203/0236 ,  H01J2329/0455 ,  H01J2329/463 ,  H01J2329/4634

Abstract: A field emission display includes a field emission cathode and an anode electrode plate arranged above the field emission cathode. The filed emission cathode includes a substrate, and a plurality of electron-emitting areas spaced apart from each other and arranged on the substrate. Each of the electron-emitting areas includes a cathode, a gate electrode, and a number of first and second conductive lines. The cathode includes a first conductive substrate and a first carbon nanotube assembly having a plurality of carbon nanotubes each having a cathode emitting end having a needle-shaped tip. The gate electrode is faced to the cathode emitting end. The taper-shaped tips of the cathode emitting ends and the gate have a small size and higher aspect ratio, allowing them to bear a larger emission current at a lower voltage.

Abstract translation: 场发射显示器包括场发射阴极和布置在场发射阴极上方的阳极电极板。 该场致发射阴极包括一个衬底和多个彼此间隔开并布置在衬底上的电子发射区。 每个电子发射区域包括阴极，栅电极和多个第一和第二导电线。 阴极包括第一导电基板和具有多个碳纳米管的第一碳纳米管组件，每个碳纳米管的阴极发射端均具有针状尖端。 栅电极面向阴极发射端。 阴极发射端和栅极的锥形尖端具有小尺寸和更高的纵横比，允许它们在较低电压下承受较大的发射电流。

公开(公告)号：US6064075A

公开(公告)日：2000-05-16

申请号：US196263

申请日：1998-11-19

Applicant: David A. Cathey, Jr. ,  John K. Lee ,  Tianhong Zhang ,  Behnam Moradi

Inventor： David A. Cathey, Jr. ,  John K. Lee ,  Tianhong Zhang ,  Behnam Moradi

IPC: H01J1/05 ,  H01J9/02 ,  H01L21/00 ,  H01L21/4763 ,  H01L29/06

CPC classification number: H01J3/021 ,  H01J29/467 ,  H01J31/127 ,  H01J9/148 ,  H01J2203/0232 ,  H01J2329/463

Abstract: Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. If the silicided layer is treated at a temperature above 1000.degree. C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.

Abstract translation: 半导体器件可以通过在诸如用于形成场致发射显示器的提取器的硅材料上形成硅化物层而制成。 硅化物层可以与场发射显示器的发射极自对准。 如果通过暴露于氮源在高于1000℃的温度下处理硅化物层，则硅化物对随后的化学侵蚀（例如涉及缓冲氧化物蚀刻工艺）是有抗性的。

公开(公告)号：US6024620A

公开(公告)日：2000-02-15

申请号：US196302

申请日：1998-11-19

Applicant: David A. Cathey, Jr. ,  John K. Lee ,  Tianhong Zhang ,  Behnam Moradi

Inventor： David A. Cathey, Jr. ,  John K. Lee ,  Tianhong Zhang ,  Behnam Moradi

IPC: H01J1/05 ,  H01J9/02 ,  H01L21/00 ,  H01L21/4763 ,  H01L29/06

CPC classification number: H01J3/021 ,  H01J29/467 ,  H01J31/127 ,  H01J9/148 ,  H01J2203/0232 ,  H01J2329/463

Abstract: Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. If the silicided layer is treated at a temperature above 1000.degree. C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.

公开(公告)号：US10056219B2

公开(公告)日：2018-08-21

申请号：US15603340

申请日：2017-05-23

Applicant: ELWHA LLC

Inventor： William David Duncan ,  Roderick A. Hyde ,  Jordin T. Kare ,  Max N. Mankin ,  Tony S. Pan ,  Lowell L. Wood

IPC: H01J1/48 ,  H01J3/02

CPC classification number: H01J1/48 ,  H01J3/021 ,  H01J2203/0232 ,  Y10T29/49204

Abstract: Graphene grids are configured for applications in vacuum electronic devices. A multilayer graphene grid is configured as a filter for electrons in a specific energy range, in a field emission device or other vacuum electronic device. A graphene grid can be deformable responsive to an input to vary electric fields proximate to the grid. A mesh can be configured to support a graphene grid.

公开(公告)号：US09659735B2

公开(公告)日：2017-05-23

申请号：US14706485

申请日：2015-05-07

Applicant: ELWHA LLC

Inventor： William David Duncan ,  Roderick A. Hyde ,  Jordin T. Kare ,  Max N. Mankin ,  Tony S. Pan ,  Lowell L. Wood, Jr.

IPC: H01J1/48 ,  H01J3/02

CPC classification number: H01J1/48 ,  H01J3/021 ,  H01J2203/0232 ,  Y10T29/49204

Abstract: Graphene grids are configured for applications in vacuum electronic devices. A multilayer graphene grid is configured as a filter for electrons in a specific energy range, in a field emission device or other vacuum electronic device. A graphene grid can be deformable responsive to an input to vary electric fields proximate to the grid. A mesh can be configured to support a graphene grid.