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    TERNARY MOLYBDENUM CHALCOGENIDE SUPERCONDUCTING WIRE AND MANUFACTURING THEREOF
    11.
    发明申请
    TERNARY MOLYBDENUM CHALCOGENIDE SUPERCONDUCTING WIRE AND MANUFACTURING THEREOF 审中-公开
    三元多晶硅超导电线及其制造

    公开(公告)号：US20160351781A1

    公开(公告)日：2016-12-01

    申请号：US15117579

    申请日：2014-02-10

    申请人： scMETROLOGY SÀRL

    发明人： Bernd SEEBER

    IPC分类号： H01L39/24 ,  H01B12/02 ,  H01L39/12

    CPC分类号： H01L39/2412 ,  B22F3/15 ,  H01B12/02 ,  H01L39/12

    摘要： A process for the manufacturing of 100% dense TMC bulk material by hot isostatic pressing (HIP) for manufacturing of ternary molybdenum chalcogenide (TMC) single or multifilamentary superconducting wires, in particular that of SnMo6S8 (SMS) and PbMo6S8 (PMS). Such wires allows generation of magnetic fields in excess of 24 Tesla, the limit of the presently used Nb3Sn wires. In addition, TMC superconducting wires are complementary to Nb3Sn because they have about four times higher mechanical strength, i.e., yield strength Rp02. The deformation process by hot extrusion and the hot wire drawing allow plastic/superplastic deformation of the TMC superconductor with perfect grain boundaries, increase the critical current density. Further, the use of high purity molybdenum, with a residual resistivity ratio of at least 100, is considered as an additional inventive step because molybdenum serves not only as a diffusion barrier but simultaneously as electrical stabilizer.

    摘要翻译： 用于制造三元钼硫属元素化（TMC）单或多丝超导线的热等静压（HIP），特别是SnMo6S8（SMS）和PbMo6S8（PMS）的制造方法。 这种电线允许产生超过24特斯拉的磁场，这是当前使用的Nb 3 Sn线的极限。 此外，TMC超导线与Nb3Sn互补，因为它们具有约四倍的机械强度，即屈服强度Rp02。 通过热挤压和热拉丝的变形过程允许具有完美晶界的TMC超导体的塑性/超塑性变形，增加临界电流密度。 此外，使用残留电阻率比至少为100的高纯度钼被认为是附加的创造性步骤，因为钼不仅用作扩散阻挡层，而且用作电稳定剂。

    Reactive contacts for 2D layered metal dichalcogenides
    12.
    发明授权
    Reactive contacts for 2D layered metal dichalcogenides 有权
    2D层状金属二硫属元素的反应性接触

    公开(公告)号：US09147824B1

    公开(公告)日：2015-09-29

    申请号：US14272889

    申请日：2014-05-08

    申请人： International Business Machines Corporation

    发明人： Qing Cao ,  Shu-Jen Han

    IPC分类号： H01L21/44 ,  H01L21/06 ,  H01L39/24 ,  H01L29/40 ,  H01L49/02 ,  H01L21/02

    CPC分类号： H01L39/2412 ,  H01L21/02485 ,  H01L21/02568 ,  H01L21/0259 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/44 ,  H01L28/60 ,  H01L29/24 ,  H01L29/401 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/778

    摘要： Techniques for forming metal contacts to LMDC-based devices are provided. In one aspect, a method of forming a metal contact to a LMDC semiconductor material includes the steps of: depositing a contact metal onto the LMDC semiconductor material; and annealing the LMDC semiconductor material and the contact metal under conditions sufficient to react the contact metal with the LMDC semiconductor material and thereby form a buffer layer as an interface between the contact metal and the LMDC semiconductor material that compositionally is a transition from the LMDC semiconductor material to the contact metal and connects the LMDC semiconductor material and the contact metal by covalent bonds. The LMDC semiconductor material can be a material having a formula MX2, wherein M is a metal, and X is a chalcogen. A LMDC-based device and techniques for forming the device are also provided.

    摘要翻译： 提供了用于形成基于LMDC的器件的金属触点的技术。 一方面，向LMDC半导体材料形成金属接触的方法包括以下步骤：将接触金属沉积到LMDC半导体材料上; 以及在足以使接触金属与LMDC半导体材料反应的条件下退火LMDC半导体材料和接触金属，从而形成作为接触金属和LMDC半导体材料之间的界面的缓冲层，其组成是从LMDC半导体 材料接触金属，并通过共价键连接LMDC半导体材料和接触金属。 LMDC半导体材料可以是具有式MX2的材料，其中M是金属，X是硫属元素。 还提供了一种基于LMDC的设备和用于形成设备的技术。

    Process for the production of Pb.sub.x Mo.sub.y S.sub.z Chevrel-phase compounds
    13.
    发明授权
    Process for the production of Pb.sub.x Mo.sub.y S.sub.z Chevrel-phase compounds 失效
    生产PbxMoySz Chevrel相化合物的方法

    公开(公告)号：US4933139A

    公开(公告)日：1990-06-12

    申请号：US91771

    申请日：1987-09-01

    申请人： Rene Flukiger ,  Wilfried Goldacker

    发明人： Rene Flukiger ,  Wilfried Goldacker

    IPC分类号： C01G1/00 ,  C01G39/06 ,  C04B35/00 ,  C04B35/45 ,  C04B35/547 ,  C04B35/645 ,  H01B13/00 ,  H01L39/06 ,  H01L39/12 ,  H01L39/24

    CPC分类号： C04B35/6455 ,  C04B35/547 ,  H01L39/2412 ,  Y10S505/823 ,  Y10T29/49014

    摘要： A process for the production of at least a one kilogram block of Chevrel-phase Pb.sub.x Mo.sub.y S.sub.z, wherein x=0.9 to 1.2, y=6.0 to 6.4, and z=7 to 8, includes mixing thoroughly stoichiometric quantities of starting materials in powdered form. The starting materials are selected from elemental Pb, Mo and S, sulfides of elemental Pb and Mo, and mixtures thereof. The starting mixture is introduced into a metallic container and evacuated to a pressure to 10.sup.4 Pa or less. The evacuated container is subjected to hot isostatic pressing at a constant pressure selected from a pressure ranging from 100 to 300 MPa, at a heating rate ranging from 10.degree. to 100.degree. C./hr., at a final pressing temperature ranging from 800.degree. to 1200.degree. C., and for a pressing period ranging from 10 to 100 hours, whereby the starting materials react to form the block of Chevrel-phase Pb.sub.x Mo.sub.y S.sub.z. The block is cooled at a cooling rate ranging from 50.degree. to 500.degree. C./hr. while maintaining the constant pressure. The process may include the further steps of filling the metallic container after evacuation with an inert gas; re-evacuating the metallic container to remove the inert gas; and heating the metallic container after re-evacuation at a temperature ranging up to but less than 300.degree., prior to subjecting the metallic container to hot isostatic pressing.

    摘要翻译： 生产至少一千克块Chevrel相PbxMoySz的方法，其中x = 0.9至1.2，y = 6.0至6.4和z = 7至8，包括充分混合化学计量的粉末形式的原料。 原料选自元素Pb，Mo和S，元素Pb和Mo的硫化物及其混合物。 将起始混合物引入金属容器中并抽空至104Pa或更低的压力。 将抽真空的容器在选自100〜300MPa的压力的恒定压力下以10℃〜100℃/小时的加热速度进行热等静压，最后压制温度为800℃ 至1200℃，压制时间为10至100小时，由此起始材料反应形成Chevrel相PbxMoySz块。 将该块以50℃至500℃/小时的冷却速率冷却。 同时保持恒定的压力。 该方法可以包括在用惰性气体排空之后填充金属容器的进一步步骤; 重新排空金属容器以除去惰性气体; 在金属容器进行热等静压之前，在高于但小于300度的温度下再次抽真空后加热金属容器。

    Process for producing a PbMo.sub.6 S.sub.8 type compound superconductor
    15.
    发明授权
    Process for producing a PbMo.sub.6 S.sub.8 type compound superconductor 失效
    生产PbMo6S8型复合超导体的方法

    公开(公告)号：US4778539A

    公开(公告)日：1988-10-18

    申请号：US932199

    申请日：1986-11-18

    申请人： Yoshio Kubo ,  Kiyoshi Yoshizaki

    发明人： Yoshio Kubo ,  Kiyoshi Yoshizaki

    IPC分类号： H01L39/12 ,  H01L39/24 ,  C21D8/10

    CPC分类号： H01L39/12 ,  H01L39/2412 ,  Y10S505/81 ,  Y10S505/815

    摘要： The present invention is designated to solve such problems whereby a process for producing a PbMo.sub.6 S.sub.8 type compound superconductor excellent in stoichiometric composition and electric characteristics can be provided.In addition to the above, another purpose of the present invention is to provide a process for producing a PbMo.sub.6 S.sub.8 type compound superconductor with stable electrical characteristics.

    摘要翻译： 本发明被指定为解决这样的问题，由此可以提供具有优异的化学组成和电特性的PbMo6S8型复合超导体的制造方法。 除了上述之外，本发明的另一目的是提供一种具有稳定电特性的PbMo6S8型复合超导体的制造方法。

    IRON BASED SUPERCONDUCTING STRUCTURES AND METHODS FOR MAKING THE SAME
    16.
    发明申请
    IRON BASED SUPERCONDUCTING STRUCTURES AND METHODS FOR MAKING THE SAME 审中-公开
    基于铁的超导结构及其制造方法

    公开(公告)号：US20130196856A1

    公开(公告)日：2013-08-01

    申请号：US13814003

    申请日：2011-08-02

    申请人： Qiang Li ,  Weidong Si

    发明人： Qiang Li ,  Weidong Si

    IPC分类号： H01L39/12 ,  H01L39/24

    CPC分类号： H01L39/125 ,  H01L39/14 ,  H01L39/24 ,  H01L39/2412 ,  Y10T29/49014 ,  Y10T428/24355

    摘要： In some embodiments of the invention, superconducting structures are described. In certain embodiments the superconducting structures described are thin films of iron-based superconductors on textured substrates; in some aspects a method for producing thin films of iron-based superconductors on textured substrates is disclosed. In some embodiments applications of thin films of iron-based superconductors on textured substrates are described. Also contemplated is the formation of a film of iron-based superconductor having a thickness and an in-plane lattice constant formed on a textured substrate having a thickness and an in-plane lattice constant similar to the in-plane lattice constant of the iron-based superconductor.

    摘要翻译： 在本发明的一些实施例中，描述了超导结构。 在某些实施例中，所描述的超导结构是在纹理化衬底上的铁基超导体的薄膜; 在一些方面，公开了一种在纹理化衬底上制造铁基超导体薄膜的方法。 在一些实施例中描述了在纹理化衬底上应用铁基超导体的薄膜。 还考虑到形成具有厚度和面内晶格常数的铁基超导体的膜，该厚度和面内晶格常数形成在纹理化衬底上，其厚度和面内晶格常数类似于铁 - 基于超导体。

    Procedure of densifying filaments for a superconductive wire
    17.
    发明申请
    Procedure of densifying filaments for a superconductive wire 有权
    超导丝丝的致密化程序

    公开(公告)号：US20100087324A1

    公开(公告)日：2010-04-08

    申请号：US12585914

    申请日：2009-09-29

    申请人： René Flüekiger

    发明人： René Flüekiger

    IPC分类号： H01L39/24

    CPC分类号： H01L39/24 ,  H01L39/2409 ,  H01L39/2412 ,  H01L39/2487 ,  Y10T29/49014

    摘要： A method for producing a superconductive wire, whereby an elongated intermediate element is formed out of an initial element in a deformation step and whereby the superconductive filaments are formed by a final reaction heat treatment, is characterized in that prior to the final reaction heat treatment the filaments in the intermediate element are densified in one or more high pressure densification steps following up the deformation step, said densification steps comprising a simultaneous action of at least four hard surfaces perpendicular to the axis of the elongated intermediate element, building up high pressure P≧100 MPa on a part of the intermediate element having an axial length L. This leads to a substantial increase of the critical current density Jc, whereby the anisotropy factor F is be almost not affected thus enabling production of almost isotropic wires or tapes.

    摘要翻译： 一种制造超导线的方法，其中在变形步骤中由初始元件形成细长的中间元件，由此通过最终反应热处理形成超导细丝，其特征在于，在最终反应热处理之前 中间元件中的细丝在跟随变形步骤的一个或多个高压致密化步骤中致密化，所述致密化步骤包括垂直于细长中间元件的轴线的至少四个硬表面的同时作用，建立高压P≥ 在具有轴向长度L的中间元件的一部分上为100MPa。这导致临界电流密度Jc的显着增加，由此各向异性因子F几乎不受影响，从而能够生产几乎各向同性的线或带。

    Process for increasing the density and improving the homogeneity of Chevrel phase powders and Chevrel phase wire obtained using said process
    18.
    发明授权
    Process for increasing the density and improving the homogeneity of Chevrel phase powders and Chevrel phase wire obtained using said process 失效
    使用所述方法获得的增加密度并提高雪佛兰相粉末和雪佛兰相线的均匀性的方法

    公开(公告)号：US5314714A

    公开(公告)日：1994-05-24

    申请号：US445853

    申请日：1990-09-03

    申请人： Bernd Seeber ,  Oystein Fischer ,  Michel Decroux

    发明人： Bernd Seeber ,  Oystein Fischer ,  Michel Decroux

    IPC分类号： C01B17/20 ,  C01B19/04 ,  C01G1/00 ,  C01G1/12 ,  C01G39/06 ,  H01B12/04 ,  H01B13/00 ,  H01L39/24 ,  B05D5/12 ,  B22F7/02

    CPC分类号： H01L39/2412 ,  Y10S505/823

    摘要： Process for increasing the density and improving the homogeneity of Chevrel phase powders and Chevrel phase wire obtained using said process. Chevrel phase powers are compounds of lead, mobydenum, and sulfur. Metallic additives in the range of 0.5% to 20% by weight are introduced in the Chevrel phase powders by a physical or chemical process. The melting temperature of the metallic additives is lower than the synthesis temperature of the Chevrel phase powders so as to increase the homogeneity. The wires obtained using this process are capable of generating high magnetic fields.

    摘要翻译： PCT No.PCT / CH89 / 00011 Sec。 371日期：1989年9月3日 102（e）1989年9月3日PCT PCT 1月20日PCT PCT。 出版物WO89 / 06864 日期1989年7月27日。使用所述方法获得的增加密度并提高Chevrel相粉末和Chevrel相线的均匀性的方法。 雪佛兰相功率是铅，云母和硫的化合物。 通过物理或化学过程将0.5重量％至20重量％的金属添加剂引入Chevrel相粉末中。 金属添加剂的熔融温度低于Chevrel相粉末的合成温度，从而提高均匀性。 使用该方法获得的导线能够产生高磁场。