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    Method of depositing a thermal barrier by plasma torch
    12.
    发明授权
    Method of depositing a thermal barrier by plasma torch 有权
    通过等离子体焰炬沉积热障的方法

    公开(公告)号：US08449677B2

    公开(公告)日：2013-05-28

    申请号：US12816951

    申请日：2010-06-16

    Applicant: Frederic Braillard ,  Justine Menuey ,  Elise Nogues ,  Aurelien Tricoire ,  Michel Vardelle

    Inventor： Frederic Braillard ,  Justine Menuey ,  Elise Nogues ,  Aurelien Tricoire ,  Michel Vardelle

    IPC: C23C16/00

    CPC classification number: H05H1/44 ,  H05H1/42 ,  Y10T428/31504

    Abstract: The invention relates to the field of methods of depositing a material on a substrate. It relates to a method of depositing, onto a substrate, a material that acts as a thermal barrier and that prior to deposition is in powder form. The powder is introduced into the plasma jet of a first plasma torch and into the plasma jet of at least one second plasma torch, the first plasma torch and at least the second plasma torch being disposed in an enclosure and oriented in such a manner that their plasma jets cross, so as to create a resultant plasma jet in which the powder is vaporized, the substrate being placed on the axis of the resultant plasma jet.

    Abstract translation: 本发明涉及在衬底上沉积材料的方法领域。 本发明涉及一种在基板上沉积作为热屏障的材料并且在沉积之前呈粉末形式的方法。 将粉末引入第一等离子体焰炬的等离子体射流中并进入至少一个第二等离子体焰炬的等离子体射流中，第一等离子体焰炬和至少第二等离子体焰炬设置在外壳中，并以这样的方式定向 等离子体射流交叉，以产生所得的等离子体射流，其中粉末被蒸发，衬底被放置在所产生的等离子体射流的轴线上。

    SILICON PURIFICATION METHOD AND SILICON PURIFICATION DEVICE
    15.
    发明申请
    SILICON PURIFICATION METHOD AND SILICON PURIFICATION DEVICE 有权
    硅氧烷纯化方法和硅氧烷纯化装置

    公开(公告)号：US20120181164A1

    公开(公告)日：2012-07-19

    申请号：US13395895

    申请日：2010-09-17

    Applicant: Yasuo Ookubo ,  Hiroshi Nagata

    Inventor： Yasuo Ookubo ,  Hiroshi Nagata

    IPC: C01B33/037 ,  B01J19/08

    CPC classification number: C01B33/037 ,  H05H1/44

    Abstract: The silicon purification method uses a silicon purification device including at least a crucible for loading a silicon metal and a plasma torch, and purifies the silicon metal by injecting a plasma gas from the plasma torch toward a melt surface of the silicon metal loaded in the crucible in a state where an angle formed by the melt surface and the plasma gas is set in the range of 20° to 80°.

    Abstract translation: 硅纯化方法使用至少包括用于加载硅金属和等离子体焰炬的坩埚的硅纯化装置，并且通过从等离子体焰炬注入等离子体气体来朝向装载在坩埚中的硅金属的熔融表面来净化硅金属 在由熔融表面和等离子体气体形成的角度设定在20°至80°的范围内的状态。

    PLASMA REACTOR
    16.
    发明申请
    PLASMA REACTOR 审中-公开
    等离子体反应器

    公开(公告)号：US20120034135A1

    公开(公告)日：2012-02-09

    申请号：US13202459

    申请日：2010-02-19

    Applicant: Philip John Risby

    Inventor： Philip John Risby

    IPC: B01J19/12

    CPC classification number: H01J37/32449 ,  H01J37/32357 ,  H01J37/3244 ,  H05H1/42 ,  H05H1/44

    Abstract: A reaction vessel has a reaction chamber, and two or more plasma nozzles coupled to the reactor chamber. Each plasma nozzle has a microwave plasma generator powered by a magnetron, and a feed tube for directing a flow of material via the plasma generator to a respective inlet to the reaction chamber whereby the plasma generator at least partly ionises the material to form a plasma prior to entry of the at least partly ionised material into the reaction chamber. The plasma-generating region of each nozzle is separated from the reactor chamber at a distance between 0.005 to 1 m.

    Abstract translation: 反应容器具有反应室和耦合到反应器室的两个或更多个等离子体喷嘴。 每个等离子体喷嘴具有由磁控管供电的微波等离子体发生器和用于将材料流经等离子体发生器引导到反应室的相应入口的进料管，由此等离子体发生器至少部分地电离材料以形成等离子体 使至少部分电离的材料进入反应室。 每个喷嘴的等离子体产生区域与反应室隔开0.005至1米的距离。

    METHOD OF DEPOSITING A THERMAL BARRIER BY PLASMA TORCH
    17.
    发明申请
    METHOD OF DEPOSITING A THERMAL BARRIER BY PLASMA TORCH 有权
    通过等离子体转鼓沉积热障的方法

    公开(公告)号：US20100252539A1

    公开(公告)日：2010-10-07

    申请号：US12816951

    申请日：2010-06-16

    Applicant: Frédéric BRAILLARD ,  Justine Menuey ,  Elise Nogues ,  Aurèlien Tricoire ,  Michel Vardelle

    Inventor： Frédéric BRAILLARD ,  Justine Menuey ,  Elise Nogues ,  Aurèlien Tricoire ,  Michel Vardelle

    IPC: C23C4/00

    CPC classification number: H05H1/44 ,  H05H1/42 ,  Y10T428/31504

    Abstract: The invention relates to the field of methods of depositing a material on a substrate. It relates to a method of depositing, onto a substrate, a material that acts as a thermal barrier and that prior to deposition is in powder form. The powder is introduced into the plasma jet of a first plasma torch and into the plasma jet of at least one second plasma torch, the first plasma torch and at least the second plasma torch being disposed in an enclosure and oriented in such a manner that their plasma jets cross, so as to create a resultant plasma jet in which the powder is vaporized, the substrate being placed on the axis of the resultant plasma jet.

    Abstract translation: 本发明涉及在衬底上沉积材料的方法领域。 本发明涉及一种在基板上沉积作为热屏障的材料并且在沉积之前呈粉末形式的方法。 将粉末引入第一等离子体焰炬的等离子体射流中并进入至少一个第二等离子体焰炬的等离子体射流中，第一等离子体焰炬和至少第二等离子体焰炬设置在外壳中，并以这样的方式定向 等离子体射流交叉，以产生所得的等离子体射流，其中粉末被蒸发，衬底被放置在所产生的等离子体射流的轴线上。

    PLASMA PRODUCING APPARATUS AND METHOD OF PLASMA PRODUCTION
    18.
    发明申请
    PLASMA PRODUCING APPARATUS AND METHOD OF PLASMA PRODUCTION 有权
    等离子体生产设备和等离子体生产方法

    公开(公告)号：US20100019677A1

    公开(公告)日：2010-01-28

    申请号：US12518737

    申请日：2007-06-12

    Applicant: Katsuhisa Kitano ,  Satoshi Hamaguchi ,  Hironori Aoki

    Inventor： Katsuhisa Kitano ,  Satoshi Hamaguchi ,  Hironori Aoki

    IPC: H05H1/24

    CPC classification number: H05H1/44 ,  H05H1/2406 ,  H05H2001/2462

    Abstract: For production of plasma from a medium gas mass in an elongated shape, electric field forming elements 3, 4 that form an electric field in the medium gas mass are provided. The electric field forming elements form an electric field so that partial discharge occurs from the electric field forming elements toward both sides in the longitudinal direction of the medium gas mass. Accordingly, plasma 5 is produced from the medium gas mass. The medium gas mass is formed by, for example, gas supply members 1,2 that guide medium gas, through an internal hollow, to the electric field forming elements. An electric field forming area includes, for example, at least one high-potential electrode 3 and a voltage applying unit 4 that applies a voltage to the high-potential electrode. Plasma limited in medium gas can be produced with high energy efficiency stably over a wide range of parameters through a simple configuration.

    Abstract translation: 为了从细长形状的中等气体质量生产等离子体，提供了在中等气体质量中形成电场的电场形成元件3,4。 电场形成元件形成电场，使得从电场形成元件朝向中等气体质量的纵向方向的两侧发生局部放电。 因此，从中等气体质量产生等离子体5。 中等气体质量由例如通过内部空心引导介质气体的气体供给构件1,2形成于电场形成元件。 电场形成区域例如包括向高电位电极施加电压的至少一个高电位电极3和电压施加单元4。 中等气体中的等离子体可以通过简单的结构在宽范围的参数下稳定地以高能量效率产生。

    MIG-plasma welding
    19.
    发明授权
    MIG-plasma welding 有权
    MIG等离子焊接

    公开(公告)号：US07235758B2

    公开(公告)日：2007-06-26

    申请号：US11127097

    申请日：2005-05-12

    Applicant: Georgiy Ignatchenko ,  Igor Dykhno

    Inventor： Georgiy Ignatchenko ,  Igor Dykhno

    IPC: B23K9/08

    CPC classification number: B23K9/173 ,  B23K9/1735 ,  B23K10/02 ,  H05H1/44

    Abstract: A welding system comprises a combined torch that includes a consumable electrode and a non-consumable electrode positioned so that their respective axes form an acute angle and so that arcs initiated from the electrodes intersect a workpiece plane to define an impingement point distance D, and a magnetic mechanism coupled to the torch and used for controlling the distance D during welding. The magnetic mechanism may be a magnetic shield inserted between the electrodes, or a separate magnetic device, e.g. a permanent magnet or electromagnet.

    Abstract translation: 焊接系统包括组合的焊炬，其包括消耗电极和非消耗性电极，其定位成使得其各自的轴线形成锐角，并且使得从电极引发的电弧与工件平面相交以限定冲击点距离D，并且 耦合到割炬的磁性机构用于控制焊接过程中的距离D. 磁性机构可以是插入在电极之间的磁屏蔽，或者单独的磁性装置，例如， 永久磁铁或电磁铁。

    Plasma generators, reactor systems and related methods
    20.
    发明申请
    Plasma generators, reactor systems and related methods 有权
    等离子发生器，反应堆系统及相关方法

    公开(公告)号：US20050115933A1

    公开(公告)日：2005-06-02

    申请号：US10727033

    申请日：2003-12-02

    Applicant: Peter Kong ,  Robert Pink ,  James Lee

    Inventor： Peter Kong ,  Robert Pink ,  James Lee

    IPC: H05H1/44 ,  B23K10/00

    CPC classification number: H05H1/44

    Abstract: A plasma generator, reactor and associated systems and methods are provided in accordance with the present invention. A plasma reactor may include multiple sections or modules which are removably coupled together to form a chamber. Associated with each section is an electrode set including three electrodes with each electrode being coupled to a single phase of a three-phase alternating current (AC) power supply. The electrodes are disposed about a longitudinal centerline of the chamber and are arranged to provide and extended arc and generate an extended body of plasma. The electrodes are displaceable relative to the longitudinal centerline of the chamber. A control system may be utilized so as to automatically displace the electrodes and define an electrode gap responsive to measure voltage or current levels of the associated power supply.

    Abstract translation: 根据本发明提供等离子体发生器，反应器及相关系统和方法。 等离子体反应器可以包括可拆卸地耦合在一起以形成室的多个部分或模块。 与每个部分相关联的是包括三个电极的电极组，每个电极耦合到三相交流（AC）电源的单相。 电极围绕室的纵向中心线布置，并且被布置成提供和延伸电弧并产生延伸的等离子体。 电极可相对于腔室的纵向中心线移位。 可以利用控制系统来自动地移位电极并且响应于测量相关电源的电压或电流水平来限定电极间隙。

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