MULTILAYER BODY AND ELECTRONIC DEVICE

    公开(公告)号:US20220064005A1

    公开(公告)日:2022-03-03

    申请号:US17421057

    申请日:2019-09-20

    摘要: A multilayer body includes a base portion and a graphene film. In an ion mass distribution versus depth of the multilayer body determined by time-of-flight secondary ion mass spectrometry, detection intensities of C6 ions have a maximum value at a depth of greater than 0 nm and 2.5 nm or less from an exposed surface. Detection intensities of C3 ions have a maximum value at a depth of greater than 0 nm and 3.0 nm or less from the exposed surface. Detection intensities of SiC4 ions have a maximum value at a depth of 0.5 nm or greater and 5.0 nm or less from the exposed surface. Detection intensities of SiC ions have a maximum value at a depth of 0.5 nm or greater and 10.0 nm or less from the exposed surface. Detection intensities of Si2 ions have a maximum value at a depth of 0.5 nm or greater and 10.0 nm or less from the exposed surface. A value obtained by dividing the maximum value of the detection intensities of SiC4 ions by an average of detection intensities of SiC4 ions associated with a region of the multilayer body is 1 or greater and 3.5 or less, the region having distances from the exposed surface in a thickness direction of the multilayer body of equal to or greater than 8 nm and 12 nm or less.

    Method of synthesizing thickness-controlled graphene through chemical vapor deposition using Cu—Ni thin film laminate

    公开(公告)号:US11117804B2

    公开(公告)日:2021-09-14

    申请号:US15867913

    申请日:2018-01-11

    摘要: Disclosed is a method of synthesizing graphene, wherein a Cu—Ni thin film laminate including a copper thin film and a nickel thin film formed thereon is placed in a chemical vapor depositor, brought into contact with a graphene precursor and subjected to chemical vapor deposition (CVD), thus synthesizing thickness-controlled graphene on the copper thin film, whereby the thickness of multilayer graphene can be easily and reproducibly controlled by adjusting only nickel thickness and CVD time, and a process window for obtaining reproducible results can be widened due to self-limiting properties whereby the maximum thickness of graphene is obtained after a certain synthesis time due to the thickness-controlled nickel thin film. Also, carbon atoms absorbed to the nickel thin film reach the copper thin film opposite thereto through internal diffusion of the metal laminate to thus grow graphene via surface-mediated reaction thereon, thereby improving the uniformity of synthesized graphene.

    PHTHALOCYANINE NANOSPHERE, PREPARATION METHOD THEREOF, AND COLOR FILTER

    公开(公告)号:US20210163492A1

    公开(公告)日:2021-06-03

    申请号:US16626240

    申请日:2019-12-13

    发明人: Lin AI

    摘要: A method for preparing phthalocyanine nanospheres is provided, including: synthesizing an ionic phthalocyanine molecule of formula I according to a following chemical scheme: wherein M is Cu or Zn, X is Br or Cl, R1, R2, R3, and R4 are aromatic substituent groups; dissolving at least one ionic phthalocyanine molecule selected from the formula I in a solvent to form a solution; preparing a two-dimensional layer crystalline material with an opposite charge to the ionic phthalocyanine molecule; adding the two-dimensional layer crystalline material to the solution; heating the solution to evaporate a portion of the solvent to aggregate the ionic phthalocyanine molecule into phthalocyanine nanospheres between a film layer of the two-dimensional layer crystalline material; and separating the phthalocyanine nanospheres from the film layer of the two-dimensional layer crystalline material.