Abstract:
A field emission display, having a cathode substrate with column lines thereon, a resistance layer covering the column lines, and gate rows crossing over the row lines. An insulation layer is located under the gate row lines to isolate the gate row lines. The resistance layer between the gate row lines is exposed. The insulation layer and the gate row lines have openings therein to expose the resistance layer. Micro-tips are formed on the exposed resistance layer in the openings. An anode substrate is located on the gate row lines and spaced with a vacuum space.
Abstract:
Improved methods and structures are provided for an array of vertical geometries which may be used as emitter tips, as a self aligned gate structure surrounding field emitter tips, or as part of a flat panel display. The present invention offers controlled size in emitter tip formation under a more streamlined process. The present invention further provides a more efficient method to control the gate to emitter tip proximity in field emission devices. The novel method of the present invention includes implanting a dopant in a patterned manner into the silicon substrate and anodizing the silicon substrate in a controlled manner causing a more heavily doped region in the silicon substrate to form a porous silicon region.
Abstract:
Disclosed herein is a process for producing a narrow titanium-containing wire, comprising steps of: (i) providing a structure comprising a substrate having a titanium-containing surface and a porous layer containing narrow pores extending towards the surface; and (ii) forming narrow titanium-containing wires in the respective narrow pores by heat treatment of the structure obtained in the step (i).
Abstract:
The present invention relates to a Christmas bulb structure, which is provided with a pair of conducting wire in the bulb and one filament and two or more fuses connecting with the two conducting wires in parallel. It increases the well rate of the assembled light string and prevents the bulb from broken caused of the filament being burned out. And also it lengthens the used period of the bulb and the light string.
Abstract:
The present invention includes field effect transistors, field emission apparatuses, thin film transistors, and methods of forming field effect transistors. According to one embodiment, a field effect transistor includes a semiconductive layer configured to form a channel region; a pair of spaced conductively doped semiconductive regions in electrical connection with the channel region of the semiconductive layer; a gate intermediate the semiconductive regions; and a gate dielectric layer intermediate the semiconductive layer and the gate, the gate dielectric layer being configured to align the gate with the channel region of the semiconductive layer. In one aspect, chemical-mechanical polishing self-aligns the gate with the channel region. According to another aspect, a field emission device includes a transistor configured to control the emission of electrons from an emitter.
Abstract:
This invention relates to a field emission cathode (1) for a light source. The cathode (1) comprises at least one base body (3) having an emission surface (3null). Further, the base body (3) is formed by a structured material, and the emission surface (3null) is at least partly covered by a field emitting nano-structured material (2). Moreover, this invention relates to a light source, comprising an anode (5), a cathode (1) and an evacuated container (6) enclosing the anode (5) and the cathode (1). The container (6) have at least one inner wall being provided with a luminescent layer (4) as well as a conductive layer forming said anode (5) and the cathode (1) is a field emission cathode of the above mentioned type.
Abstract:
A method for making a carbon nanotube-based field emission display device includes the following steps: providing an insulative layer (22) having a first surface; depositing a layer of catalyst (26) on the first surface of the insulative layer; forming a spacer (28) having a number of openings therein such that patterned areas of the layer of catalyst are exposed in the openings; forming arrays of carbon nanotubes (30) extending from the layer of catalyst in the openings; forming a cathode electrode (34) on a top of each of the arrays of carbon nanotubes; forming gate electrodes (40) on a second, opposite surface of the insulative layer offset from the patterned areas; removing portions of the insulative layer corresponding to the arrays of carbon nanotubes so as to expose the arrays of carbon nanotubes; and attaching an anode electrode (50) having a phosphor screen (52) to the above obtained structure.
Abstract:
Disclosed is an emitter composition of a field emission cell that is printed on a cathode substrate of a display to be applied to an electron emission source, including a carbon nanotube, a binder, glass frit, a dispersing agent and an organic solvent, characterized by further having 0.1-20 w % of diamond. Further, a manufacturing method of the emitter composition and a field emission cell using the emitter composition are also provided. In the current invention, since the field emission cell has the carbon nanotube and the diamond distributed simultaneously therein, it has a relatively high current density even at the same driving voltage, thereby improving emitting properties. In addition, the field emission cell is advantageous in terms of superior printability and stable field emission, while reducing various expenses required to operate and repair constitutive parts thereof.
Abstract:
A control system with a communication function wherein: a central unit communicates 30 with a plurality of devices 11, 12, . . . , monitors and manages the operations of the devices; and each of the devices includes an input section for entering position data thereof. The central unit receives the position data and an identification data of each device, and includes a unit for making the identification data correspond to the position data for each device.
Abstract:
An emitter has an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is preferably less than about 500 Angstroms. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the silicon-based dielectric layer is formed. A cathode layer is formed on the silicon-based dielectric layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.