-
公开(公告)号：US10179755B2
公开(公告)日：2019-01-15
申请号：US15577651
申请日：2016-05-27
Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY , NISSAN CHEMICAL INDUSTRIES, LTD.
Inventor： Hajime Kawanami , Takayuki Ishizaka , Hitomi Fujiyama , Nobuyuki Kakiuchi , Norihito Shiga
IPC: C07C29/34 , C07C31/125 , B01J31/02
Abstract: A method for preparing a branched alcohol by dimerizing an aliphatic monoalcohol having three or more carbon atoms in the presence of a base and a catalyst. The dimerization reaction is performed under atmospheric pressure while injecting a hydrogen gas. With this method, it is possible to obtain a dimerized alcohol with excellent yield even when using a branched aliphatic monoalcohol as the starting material.
-
公开(公告)号：US20190003818A1
公开(公告)日：2019-01-03
申请号：US16064121
申请日：2016-12-22
Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY , MITSUI CHEMICALS TOHCELLO, INC.
Inventor： Kinji ASAKA , Tetsuya HORIUCHI , Zicai ZHU , Mitsuo TAKASE
Abstract: The present invention relates to a deformation sensor comprising a structure in which an ion-conductive polymer layer is sandwiched between soft electrodes, wherein non-uniform ion distribution is generated in the ion-conductive polymer layer by deformation, thereby generating a potential difference between the electrodes.
-
公开(公告)号：US10163674B2
公开(公告)日：2018-12-25
申请号：US15529070
申请日：2015-11-24
Inventor： Shiro Hara , Sommawan Khumpuang , Fumito Imura , Michihiro Inoue , Arami Saruwatari
IPC: H01L23/544 , H01L21/683 , H01L21/02 , H01L21/56 , H01L23/31 , H01L23/00
Abstract: An object of the present invention is to provide a circular support substrate that allows for positioning based solely on its outer periphery shape. As a means for solving the problems, a circular support substrate is provided that has at least three chords along its circumference, wherein the chords are provided at positions where they do not run linearly symmetrical to the straight line passing through the center axis of the circular support substrate.
-
公开(公告)号：US20180358463A1
公开(公告)日：2018-12-13
申请号：US15993708
申请日：2018-05-31
Applicant: FUJI ELECTRIC CO., LTD. , NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
Inventor： Yusuke KOBAYASHI , Naoyuki OHSE , Shinsuke HARADA , Manabu TAKEI
IPC: H01L29/78 , H01L29/417 , H01L29/16 , H01L29/47
CPC classification number: H01L29/7813 , H01L29/1608 , H01L29/41741 , H01L29/41766 , H01L29/47 , H01L29/7806
Abstract: On a front surface of a semiconductor base, a first n−-type drift region and a second n-type drift region are provided. A gate trench is provided that penetrates an n+-type source region and p-type base region, and reaches the second n-type drift region. Between adjacent gate trenches, a contact trench is provided that penetrates the n+-type source region and the p-type base region, and reaches a p-type semiconductor region, through the second n-type drift region. A source electrode embedded in the contact trench is in contact with the p-type semiconductor region at a bottom and corners of the contact trench, and forms a Schottky junction with the second n-type drift region at side walls of the contact trench. A depth of the contact trench is a depth by which a mathematical area of a part thereof forming the Schottky junction is a predetermined mathematical area or greater.
-
195.发明授权公开(公告)号：US10152152B2
公开(公告)日：2018-12-11
申请号：US15516119
申请日：2015-09-29
Inventor： Takehito Kozasa , Manabu Yoshida
IPC: G08B6/00 , G06F3/041 , H01G7/02 , H03K17/955 , H03K17/975 , G01P15/08 , G06F3/01 , G06F3/0354 , H01L21/31 , H01L29/51 , H01L29/78 , H01L29/82 , H01L29/84 , H01L41/113 , B81B3/00 , G06F3/044 , G01L1/22
Abstract: Provided are an element applicable to a high-precision, high-sensitivity pressure detecting sensor and switch, a manufacturing method for the element; and a sensor, an electronic circuit, and an input device that include the element. The electret element of the present invention has a semiconductor sandwiched between a pair of electrodes, and an electret film disposed at a location opposite to the semiconductor via a gap. The electret element of the present invention may be structured so that the semiconductor contacts with the electret film, or so as to have micro-sized gaps therebetween. The electret film is semi-permanently kept in a positively or negatively charged state. By having a structure in which the electret film can contact with or approach the semiconductor, an amount of electric currents flowing between the pair of electrodes can be controlled.
-
Patent Agency Ranking
公开(公告)号：US20180350690A1
公开(公告)日：2018-12-06
申请号：US15761628
申请日：2016-09-21
Inventor： Toshihiro Sekigawa , Masakazu Hioki , Hanpei Koike
IPC: H01L21/8238 , H01L27/092 , H03K17/693 , H03K19/0944
CPC classification number: H01L21/8238 , H01L27/08 , H01L27/092 , H03K17/00 , H03K17/693 , H03K19/094 , H03K19/0944
Abstract: A multiplexer using an FTMOST and capable of achieving both increase in transfer rate and reduction in leakage current and an integrated circuit using the multiplexer are provided. The multiplexer includes a plurality of pass transistors each formed by a four-terminal double insulated gate field effect transistor. A second gate of the field effect transistor is connected to a threshold voltage control node, and a resistor is connected between the threshold voltage control node and a threshold voltage control voltage source. Also, the multiplexer includes a plurality of transmission gates each formed by four-terminal double insulated gate N-type and P-type field effect transistors connected in parallel. One of gates of the N-type gate field effect transistor is connected to a first threshold voltage control node, and a first resistor is connected between the first threshold voltage control node and a first threshold voltage control voltage source. One of gates of the P-type gate field effect transistor is connected to a second threshold voltage control node, and a second resistor is connected between the second threshold voltage control node and a second threshold voltage control voltage source.
-
197.发明授权公开(公告)号：US10113713B2
公开(公告)日：2018-10-30
申请号：US15597656
申请日：2017-05-17
Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY , YAMASHITA DENSO CORPORATION
Inventor： Sanekazu Igari , Nobuhiko Kubo
Abstract: A light irradiation apparatus includes a plurality of light sources, a plurality of light transmission paths capable of selectively transmitting lights from the plurality of light sources, respectively, and an optical fiber path provided with a plurality of light incidence ends receiving respective lights from the plurality of light transmission paths, and a single light exit end. The optical fiber path has a plurality of optical fiber bundles. Incidence ends of the plurality of optical fiber bundles configures the plurality of light incidence ends, and exit ends of the plurality of optical fiber bundles configure the single light exit end by combining themselves. A lot of optical fibers constitute the plurality of optical fiber bundles. The optical fibers of the plurality of optical fiber bundles are dispersedly arranged with each other in uniform at the single light exit end.
-
公开(公告)号：US20180304660A1
公开(公告)日：2018-10-25
申请号：US15767937
申请日：2016-10-17
Inventor： Ryohei HOKARI , Kazuma KURIHARA , Naoki TAKADA
CPC classification number: B41M1/26 , B29C59/02 , B32B27/28 , B32B2398/20 , B41M1/12 , B41M1/30 , B41M5/52
Abstract: In the present invention, an uneven structure is formed on a surface of a base material to be printed to which ink is applied, and the pitch, the shape in plan view, and the depth of recesses in the uneven structure are determined on the basis of the physical properties (specific weight, viscosity, and contact angle) of ink to be used, in accordance with a printing pattern and a required printing precision. The amount of ink filling the recesses is thereby controlled, and high-precision is enabled at low cost without changing the printing process itself.
-
公开(公告)号：US10093729B2
公开(公告)日：2018-10-09
申请号：US14901018
申请日：2014-06-25
Inventor： Teruyuki Nishi , Kiyoshi Asai , Hiroko Hagiwara , Masayuki Machida
Abstract: This invention provides a novel means that allows efficient secretion and production of a target protein in a host cell. This invention concerns a novel polypeptide having an activity of improving the secretion productivity of a target protein, a gene comprising a nucleotide sequence encoding such polypeptide, a vector comprising such gene, a transformant obtained by transforming a host cell with such vector, and a method for producing a protein comprising a step of culturing such transformant and recovering a target protein from the culture product.
-
200.发明申请公开(公告)号：US20180284040A1
公开(公告)日：2018-10-04
申请号：US15765789
申请日：2016-10-11
Inventor： Toshihiko OGURA
IPC: G01N23/2251 , G01N27/00 , H01J37/20 , H01J37/28
Abstract: The invention provides a method of observing an organism or any other organic specimen in an aqueous solution in a scanning electron microscope. The method includes placing the organic specimen along with the aqueous solution between opposing surfaces of a pair of first and second insulating thin films facing each other, irradiating and scanning an electrically conductive thin film provided on an outward facing surface of the first insulating thin film with a pulsed electron beam an intensity of which is changed in a form of pulses, and acquiring an image according to a change in electric potential of an outward facing surface of the second insulating thin film, in which the composition of the specimen is analyzed based on the difference between the images corresponding to the pulsed electron beam applied at different ON/OFF frequencies.
-
-
-
-
-
-
-
-
-
Search Results
1793
records
(took 0.038 seconds)
