Dynamically reconfigurable holograms with electronically erasable programmable intermediate layers
    191.
    发明授权
    Dynamically reconfigurable holograms with electronically erasable programmable intermediate layers 有权
    具有电子可擦除可编程中间层的动态可重构全息图

    公开(公告)号:US08149485B2

    公开(公告)日:2012-04-03

    申请号:US12317731

    申请日:2008-12-29

    IPC分类号: G03H1/08 G02B5/32 G02F1/01

    摘要: Dynamically reconfigurable holograms with electronically erasable programmable intermediate layers are disclosed. An example apparatus includes first nanowires, each of the first nanowires having protuberances along a length thereof. The example apparatus also includes second nanowires arranged approximately perpendicular to the first nanowires, the protuberances of the first nanowires being approximately parallel to corresponding ones of the second nanowires. In addition, a layer is disposed between the first and second nanowires. The layer is to control refractive indices at nanowire intersections at intersecting ones of the first and second nanowires.

    摘要翻译: 公开了具有电子可擦除可编程中间层的动态可重构全息图。 示例性设备包括第一纳米线,第一纳米线中的每一个具有沿其长度的突起。 示例性装置还包括大致垂直于第一纳米线布置的第二纳米线,第一纳米线的突起大致平行于第二纳米线中的相应纳米线。 此外,在第一和第二纳米线之间设置一层。 该层用于控制在第一和第二纳米线的相交处的纳米线交点处的折射率。

    LIGHT-EMITTING DIODE INCLUDING A METAL-DIELECTRIC-METAL STRUCTURE
    192.
    发明申请
    LIGHT-EMITTING DIODE INCLUDING A METAL-DIELECTRIC-METAL STRUCTURE 审中-公开
    发光二极管,包括金属 - 电介质金属结构

    公开(公告)号:US20120032140A1

    公开(公告)日:2012-02-09

    申请号:US13259444

    申请日:2009-09-18

    IPC分类号: H01L33/04 H01L33/62

    摘要: A light-emitting diode (LED) (101). The LED (101) includes a plurality of portions including a p-doped portion (112), an intrinsic portion (114), and a n-doped portion (116). The intrinsic portion (114) is disposed between the p-doped portion (112) and the n-doped portion (116) and forms a p-i junction (130) and an i-n junction (134) The LED (101) also includes a metal-dielectric-metal (MDM) structure (104) including a first metal layer (140), a second metal layer (144), and a dielectric medium disposed between the first metal layer (140) and the second metal layer (144). The metal layers of the MDM structure (104) are disposed about orthogonally to the p-i junction (130) and the i-n junction (134); the dielectric medium includes the intrinsic portion (114); and, the MDM structure (104) is configured to enhance modulation frequency of the LED (101) through interaction with surface plasmons that are present in the metal layers.

    摘要翻译: 发光二极管(LED)(101)。 LED(101)包括多个部分,包括p掺杂部分(112),本征部分(114)和n掺杂部分(116)。 本征部分(114)设置在p掺杂部分(112)和n掺杂部分(116)之间,并形成π结(130)和在结(134)中。LED(101)还包括金属 包括第一金属层(140),第二金属层(144)和布置在第一金属层(140)和第二金属层(144)之间的电介质的电 - 金属(MDM)结构(104)。 MDM结构(104)的金属层与p-i结(130)和i-n结(134)正交地设置; 电介质包括本征部分(114); 并且,MDM结构(104)被配置为通过与存在于​​金属层中的表面等离子体相互作用来增强LED(101)的调制频率。

    Negative index material-based modulators and methods for fabricating the same
    193.
    发明授权
    Negative index material-based modulators and methods for fabricating the same 有权
    负基于材料的调制剂及其制造方法

    公开(公告)号:US08107149B2

    公开(公告)日:2012-01-31

    申请号:US12387169

    申请日:2009-04-29

    IPC分类号: G02B26/00 G02F1/01

    摘要: Various embodiments of the present invention are directed to external, electronically controllable, negative index material-based modulators. In one aspect, an external modulator comprises a negative index material in electronic communication with an electronic signal source. The negative index material receives an electronic signal encoding data from the electronic signal source and an unmodulated carrier wave from an electromagnetic radiation source. Magnitude variations in the electronic signal produce corresponding effective refractive index changes in the negative index material encoding the data in the amplitude and/or phase of the carrier wave to produce an electromagnetic signal.

    摘要翻译: 本发明的各种实施方案涉及外部的,电子可控的,负指数材料的调节剂。 一方面,外部调制器包括与电子信号源电子通信的负索引材料。 负索引材料接收来自电子信号源的电子信号编码数据和来自电磁辐射源的未调制载波。 电子信号的幅度变化在编码载波的幅度和/或相位中的数据的负指数材料中产生对应的有效折射率变化,以产生电磁信号。

    Light-emitting diodes with carrier extraction electrodes
    194.
    发明授权
    Light-emitting diodes with carrier extraction electrodes 有权
    具有载体提取电极的发光二极管

    公开(公告)号:US08053982B2

    公开(公告)日:2011-11-08

    申请号:US12243117

    申请日:2008-10-01

    IPC分类号: H01J1/62 H01L27/15

    摘要: One embodiment of the present invention relates to a light-emitting diode having one or more light-emitting layers, a pair of electrodes disposed on the light-emitting diode so that an operating voltage can be applied to generate light from the one or more light-emitting layers, and at least one external electrode in electronic communication with the one or more light-emitting layers. Applying an appropriate voltage to the at least one external electrodes at about the time the operating voltage is terminated extracts excess electrons from the one or more light-emitting layers and reduces the duration of electron-hole recombination during the time period over which the operating voltage is turned off.

    摘要翻译: 本发明的一个实施例涉及具有一个或多个发光层的发光二极管,设置在发光二极管上的一对电极,使得可以施加工作电压以产生来自一个或多个光的光 以及与所述一个或多个发光层电连通的至少一个外部电极。 大约在工作电压终止时将适当的电压施加到至少一个外部电极,从一个或多个发光层提取出多余的电子,并减少在工作电压的时间段内的电子 - 空穴复合的持续时间 已关闭

    Photovoltaic Structure and Solar Cell and Method of Fabrication Employing Hidden Electrode
    197.
    发明申请
    Photovoltaic Structure and Solar Cell and Method of Fabrication Employing Hidden Electrode 审中-公开
    光伏结构和太阳能电池及使用隐藏电极的制造方法

    公开(公告)号:US20110220171A1

    公开(公告)日:2011-09-15

    申请号:US13130814

    申请日:2009-01-30

    摘要: A photovoltaic structure (100), a solar cell (100, 200) and a method (300) of fabricating a solar cell (100, 200) employ a hidden electrode (122, 222, 422) on a formed (320) mesa (120, 220, 420) and a bramble (130, 230, 430) of grown (330) nanowires. The mesa includes an insulator island (121, 221, 421) adjacent to a surface of the substrate (110, 210, 410) and the hidden electrode buried under a seed layer on the insulator island. One end of some of the nanowires (134, 234) is anchored to the seed layer (124, 224, 424) of the mesa. One end of others of the nanowires (132, 232) is anchored to a seed layer (114, 214, 414) formed (310) on the substrate adjacent to the mesa. The seed layers independently are an extrinsic semiconductor. A semiconductor junction includes the seed layers and some of the nanowires of the bramble.

    摘要翻译: 太阳能电池(100,200)和制造太阳能电池(100,200)的方法(300)在所形成的(320)台面(320)上采用隐藏电极(122,222,422) 120,220,420)和生长(330)纳米线的荆棘(130,230,430)。 所述台面包括邻近所述基板(110,210,410)的表面的绝缘体岛(121,221,421),以及埋在所述绝缘体岛上的种子层下方的所述隐藏电极。 一些纳米线(134,234)的一端被锚定到台面的种子层(124,224,424)。 纳米线(132,232)的另一端锚定在与台面相邻的基板上形成的种子层(114,214,414)上。 种子层独立地是非本征半导体。 半导体结包括种子层和荆棘的一些纳米线。

    Optical Beam Couplers And Splitters
    199.
    发明申请
    Optical Beam Couplers And Splitters 有权
    光束耦合器和分离器

    公开(公告)号:US20110206320A1

    公开(公告)日:2011-08-25

    申请号:US13126845

    申请日:2008-10-31

    IPC分类号: G02B6/26 G02B6/24

    摘要: Beam couplers and splitters are disclosed herein. An embodiment of a beam coupler and splitter includes a first waveguide including a bevel and a bend, and a second waveguide including a bevel complementarily shaped to the first waveguide bevel. The first waveguide bevel is configured to totally internally reflect at least some light incident thereon. The second waveguide is coupled to the first waveguide such that i) the second waveguide bevel is adjacent to at least a portion of the first waveguide bevel, and ii) a predetermined coupling ratio is achieved.

    摘要翻译: 光束耦合器和分离器在本文中公开。 光束耦合器和分离器的实施例包括包括斜面和弯曲部的第一波导和包括与第一波导斜面互补成形的斜面的第二波导。 第一波导斜面被配置为完全内部反射入射到其上的至少一些光。 第二波导耦合到第一波导,使得i)第二波导斜面与第一波导斜面的至少一部分相邻,以及ii)实现预定的耦合比。

    Fabricating arrays of metallic nanostructures
    200.
    发明授权
    Fabricating arrays of metallic nanostructures 失效
    制造金属纳米结构阵列

    公开(公告)号:US07989798B2

    公开(公告)日:2011-08-02

    申请号:US12509689

    申请日:2009-07-27

    IPC分类号: H01L29/06

    摘要: A patterned array of metallic nanostructures and fabrication thereof is described. A device comprises a patterned array of metallic columns vertically extending from a substrate. Each metallic column is formed by metallically coating one of an array of non-metallic nanowires catalytically grown from the substrate upon a predetermined lateral pattern of seed points placed thereon according to a nanoimprinting process. An apparatus for fabricating a patterned array of metallic nanostructures is also described.

    摘要翻译: 描述了金属纳米结构的图案阵列及其制造。 一种器件包括从衬底垂直延伸的金属柱的图案化阵列。 根据纳米压印方法,通过在其上放置的种子点的预定横向图案上,从衬底催化生长的非金属纳米线阵列之一金属地涂覆每个金属柱。 还描述了用于制造金属纳米结构的图案化阵列的装置。