公开(公告)号：US08995257B2

公开(公告)日：2015-03-31

申请号：US13360345

申请日：2012-01-27

Applicant: Liwen Chu ,  George A. Vlantis

Inventor： Liwen Chu ,  George A. Vlantis

IPC: H04L12/26 ,  H04W40/24

CPC classification number: H04W40/246

Abstract: TDLS support in VHT devices is enabled through the use of added VHT fields in the TDLS frames. A VHT TDLS direct link can be setup through a respective TDLS Setup Request/Response with added field announcing VHT Capabilities of the VHT device and the peer device. Added VHT Operation field in the TDLS Setup Confirm frame adds supports between VHT peer devices for non-VHT BSS and VHT BSS. Two VHT STAs can establish wider TDLS channel than BSS operating channel through TDLS establishment. VHT off channel support is enabled by adding Wide Bandwidth Channel Switch field in the TDLS Channel Switch Request frame and no changes to TDLS Channel Switch Response. A VHT Capabilities field is also added to TDLS Discovery Response frame to inform peer devices of device capabilities.

Abstract translation: 通过在TDLS帧中使用添加的VHT字段，可以在VHT设备中实现TDLS支持。 可以通过相应的TDLS设置请求/响应来设置VHT TDLS直接链路，其中增加了VHT设备和对等设备的VHT功能。 在TDLS Setup中添加了VHT操作字段确认帧增加了用于非VHT BSS和VHT BSS的VHT对等设备之间的支持。 两台VHT STA可以通过建立TDLS建立比BSS操作通道更宽的TDLS通道。 通过在TDLS通道切换请求帧中添加宽带宽通道切换字段并且不改变TDLS通道切换响应，可启用VHT关闭通道支持。 VHT功能字段也被添加到TDLS发现响应帧以通知对等设备的设备功能。

公开(公告)号：US08992692B2

公开(公告)日：2015-03-31

申请号：US13365420

申请日：2012-02-03

Applicant: John H. Zhang

Inventor： John H. Zhang

IPC: B08B1/02 ,  B08B1/04 ,  H01L21/67 ,  H01L21/68 ,  A46B13/00 ,  A46B15/00 ,  H01L21/02

CPC classification number: H01L21/67046 ,  A46B13/001 ,  A46B15/0004 ,  H01L21/02052 ,  H01L21/681 ,  Y10S134/902

Abstract: A cleaning apparatus for cleaning a semiconductor wafer includes a rotary brush to be positioned to clean the semiconductor wafer, and an optical sensing device associated with the rotary brush to sense a separation distance between a reference position thereon and the semiconductor wafer. An actuator is coupled to the optical sensing device to position the rotary brush based upon the sensed separation distance.

Abstract translation: 用于清洁半导体晶片的清洁装置包括：待定位以清洁半导体晶片的旋转刷，以及与旋转刷相关联的光学感测装置，以感测其上的基准位置和半导体晶片之间的间隔距离。 致动器耦合到光学感测装置，以基于感测到的间隔距离来定位旋转刷。

公开(公告)号：US20150080722A1

公开(公告)日：2015-03-19

申请号：US14548473

申请日：2014-11-20

Applicant: STMicroelectronics, Inc.

Inventor： Patrick Furlan

IPC: A61B5/00 ,  G06F19/00 ,  A61B5/02 ,  A61B5/107 ,  A61B8/08

CPC classification number: A61B5/4878 ,  A61B5/0002 ,  A61B5/0059 ,  A61B5/02 ,  A61B5/02028 ,  A61B5/103 ,  A61B5/107 ,  A61B5/1073 ,  A61B5/4528 ,  A61B5/7275 ,  A61B5/7282 ,  A61B5/742 ,  A61B8/08 ,  G01G19/44 ,  G01G23/3728 ,  G16H50/30

Abstract: A device for correlating trend data with respect to a patient's weight and lower extremity displacement can identify conditions indicative of congestive heart failure. An imaging mechanism is operable to measure lower extremity displacement over a period of time. An over-time trend analysis of both the patient's weight and the lower extremity displacement measurements is performed to determine whether over a particular sample period an increase in a patient's lower extremity displacement can be correlated with an increase in the patient's weight. When such a correlation does not exist, an alert can be issued of conditions indicative of congestive heart failure.

Abstract translation: 用于将趋势数据与患者体重和下肢位移相关联的装置可以识别指示充血性心力衰竭的条件。 成像机构可操作以在一段时间内测量下肢位移。 执行患者体重和下肢位移测量的过度时间趋势分析以确定在特定采样周期是否可以使患者的下肢位移的增加与患者体重的增加相关联。 当不存在这样的相关性时，可以发出指示充血性心力衰竭的状况的警报。

公开(公告)号：US20150076695A1

公开(公告)日：2015-03-19

申请号：US14027556

申请日：2013-09-16

Applicant: International Business Machines Corporation

Inventor： Tien-Jen Cheng ,  Lawrence A. Clevenger ,  Terence L. Kane ,  Carl J. Radens ,  Andrew H. Simon ,  Yun-Yu Wang ,  Yiheng Xu ,  John Zhang

IPC: H01L23/532 ,  H01L21/768

CPC classification number: H01L23/53238 ,  H01L21/28562 ,  H01L21/288 ,  H01L21/76807 ,  H01L21/76843 ,  H01L21/76849 ,  H01L23/5226 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming an integrated circuit structure includes forming a cap layer above a first ILD layer of a first metal level, the first ILD layer includes a recess filled with a first conductive material to form a first interconnect structure. Next, a second ILD layer is formed above the cap layer and a via is formed within the second ILD layer as a second interconnect structure of a second metal level. The via is aligned with the first interconnect structure. Subsequently, a portion of the cap layer is removed to extend the via to expose a top portion of the first conductive material then a passivation cap is selectively formed at a bottom portion of the via in the second ILD layer and the passivation cap contacting the top portion of the first conductive material. The passivation cap includes a metal alloy to form an interface between the bottom portion of the via and the first conductive material.

Abstract translation: 形成集成电路结构的方法包括在第一金属层的第一ILD层上形成覆盖层，第一ILD层包括填充有第一导电材料以形成第一互连结构的凹陷。 接下来，在盖层之上形成第二ILD层，并且在第二ILD层内形成通孔作为第二金属层的第二互连结构。 通孔与第一互连结构对准。 随后，去除盖层的一部分以延伸通孔以暴露第一导电材料的顶部部分，然后在第二ILD层中的通孔的底部选择性地形成钝化帽，并且钝化帽接触顶部 第一导电材料的一部分。 钝化盖包括金属合金，以形成通孔的底部与第一导电材料之间的界面。

公开(公告)号：US20150071300A1

公开(公告)日：2015-03-12

申请号：US14025607

申请日：2013-09-12

Applicant: STMicroelectronics, Inc. ,  Cisco Technology, Inc.

Inventor： Gale L. SHALLOW ,  Benjamin Nelson DARBY ,  Jonathan EVANS ,  Maynard Darvel HAMMOND ,  Zhifang J. NI ,  Charaf HANNA

IPC: H04L12/823 ,  H04L12/873

CPC classification number: H04L47/323 ,  H04L45/7453 ,  H04L47/193 ,  H04N21/61 ,  H04N21/6118

Abstract: A system and method suited for improved overall data transmission having a hardware-based transceiver configured for transmitting upstream data with suppressed data packets. In TCP sessions between devices, a server seeks an “acknowledgement” that the downstream data transmission has been received by a client. Some data packets sent upstream may contain only TCP acknowledgement data and therefore may be combined with other purely TCP acknowledgement data packets in order to reduce the impact of the TCP acknowledgement packets on the overall upstream data throughput. In addition, this results in increased TCP performance in the downstream transmission direction as well because the algorithm enables replacing earlier arriving ACK packets with later arriving ACK packets which allows the device to send all TCP ACK information known to the suppressor at the earliest possible time.

Abstract translation: 一种适于改进总体数据传输的系统和方法，具有基于硬件的收发器，所述收发器被配置为用压缩的数据分组发送上行数据。 在设备之间的TCP会话中，服务器寻求客户端接收到下游数据传输的“确认”。 上游发送的一些数据包可能仅包含TCP确认数据，因此可以与其他纯TCP确认数据包组合，以减少TCP确认数据包对总体上行数据吞吐量的影响。 此外，这也导致在下游传输方向上提高的TCP性能，因为该算法能够用稍后到达的ACK分组来替换先前到达的ACK分组，这允许设备在最早的可能时间发送抑制器已知的所有TCP ACK信息。

公开(公告)号：US08970004B2

公开(公告)日：2015-03-03

申请号：US13725666

申请日：2012-12-21

Applicant: STMicroelectronics, Inc. ,  International Business Machines Corporation

Inventor： John H. Zhang ,  Lawrence A. Clevenger ,  Carl Radens ,  Yiheng Xu

IPC: H01L29/00 ,  H01L27/02 ,  H01L21/266

CPC classification number: H01L27/0248 ,  H01L21/26586 ,  H01L21/266 ,  H01L27/0255

Abstract: A junction diode array is disclosed for use in protecting integrated circuits from electrostatic discharge. The junction diodes integrate symmetric and asymmetric junction diodes of various sizes and capabilities. Some of the junction diodes are configured to provide low voltage and current discharge via un-encapsulated interconnecting wires, while others are configured to provide high voltage and current discharge via encapsulated interconnecting wires. Junction diode array elements include p-n junction diodes and N+/N++ junction diodes. The junction diodes include implanted regions having customized shapes. If both symmetric and asymmetric diodes are not needed as components of the junction diode array, the array is configured with isolation regions between diodes of either type. Some junction diode arrays include a buried oxide layer to prevent diffusion of dopants into the substrate beyond a selected depth.

Abstract translation: 公开了用于保护集成电路免受静电放电的结二极管阵列。 结二极管集成了各种尺寸和功能的对称和非对称结二极管。 一些结二极管被配置为通过未封装的互连线提供低电压和电流放电，而其它结构二极管被配置为通过封装的互连线提供高电压和电流放电。 结二极管阵列元件包括p-n结二极管和N + / N + +结二极管。 结二极管包括具有定制形状的植入区域。 如果不需要对称和非对称二极管作为结二极管阵列的组件，则阵列配置有任一类型的二极管之间的隔离区域。 一些结二极管阵列包括掩埋氧化物层，以防止掺杂剂扩散到超过选定深度的衬底中。

公开(公告)号：US08940634B2

公开(公告)日：2015-01-27

申请号：US13171657

申请日：2011-06-29

Applicant: Brett H. Engel ,  Lindsey Hall ,  David F. Hilscher ,  Randolph F. Knarr ,  Steven R. Soss ,  Jin Z. Wallner

Inventor： Brett H. Engel ,  Lindsey Hall ,  David F. Hilscher ,  Randolph F. Knarr ,  Steven R. Soss ,  Jin Z. Wallner

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L23/528 ,  H01L21/76816 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming overlapping contacts in a semiconductor device includes forming a first contact in a dielectric layer; etching the dielectric layer to form a recess adjacent to the first contact and removing a top portion of the first contact while etching the dielectric layer, wherein a bottom portion of the first contact remains in the dielectric layer after the recess is formed in the dielectric layer; and forming a second contact in the recess adjacent to the bottom portion of the first contact and on top of a top surface of the bottom portion of the first contact.

Abstract translation: 在半导体器件中形成重叠触点的方法包括在电介质层中形成第一触点; 蚀刻电介质层以形成与第一接触相邻的凹部，并且在蚀刻介电层的同时去除第一接触的顶部，其中在电介质层中形成凹部之后第一接触的底部保留在电介质层中 ; 以及在与所述第一接触件的底部相邻的所述凹部中形成第二触点，并且在所述第一接触件的底部的顶表面的顶部上形成第二接触。

公开(公告)号：US08934390B2

公开(公告)日：2015-01-13

申请号：US13631284

申请日：2012-09-28

Applicant: STMicroelectronics, Inc.

Inventor： Liwen Chu ,  George A. Vlantis

IPC: G08C17/00 ,  G01R31/08 ,  G06F11/00 ,  G08C15/00 ,  H04J1/16 ,  H04J3/14 ,  H04L1/00 ,  H04L12/26 ,  H04L12/28 ,  H04J3/00 ,  H04L12/413

CPC classification number: H04W52/0216 ,  Y02D70/122 ,  Y02D70/142

Abstract: Enhanced low power medium access (LPMA) processes involve the enhanced LPMA STA indicating low power capabilities during association and being allocated an AID. The AID(s) for one or a group of enhanced LPMA STA(s) are included in one TIM sent during a different BEACON interval than the AID(s) for another or another group of enhanced LPMA STA(s). In addition, or alternatively, the AID(s) for enhanced LPMA STA(s) are located at an edge of the AID set within a TIM, a portion of the TIM that may be easily truncated and therefore not sent. The enhanced LPMA STAs and associated access point negotiate unique offset and sleepinterval periods for polling or data uplink by the enhanced LPMA STAs.

Abstract translation: 增强的低功率介质访问（LPMA）处理涉及增强的LPMA STA，其指示关联期间的低功率能力并且被分配AID。 一个或一组增强型LPMA STA的AID包括在与另一组或另一组增强型LPMA STA的AID不同的BEACON间隔期间发送的一个TIM中。 另外或替代地，用于增强的LPMA STA的AID位于TIM内的AID集合的边缘，该TIM的一部分可以容易地被截断，因此不被发送。 增强的LPMA STA和相关联的接入点通过增强的LPMA STA协商轮询或数据上行链路的唯一偏移和休眠间隔周期。

公开(公告)号：US08913629B2

公开(公告)日：2014-12-16

申请号：US13623579

申请日：2012-09-20

Applicant: Lawrence W. Yonge, III ,  Srinivas Katar ,  William E. Earnshaw ,  Stefano Galli ,  Akio Kurobe ,  Hisao Koga ,  Nobutaka Kodama ,  Jose Abad Molina ,  Oleg Logvinov ,  Paul Dixon ,  Olivier Isson

Inventor： Lawrence W. Yonge, III ,  Srinivas Katar ,  William E. Earnshaw ,  Stefano Galli ,  Akio Kurobe ,  Hisao Koga ,  Nobutaka Kodama ,  Jose Abad Molina ,  Oleg Logvinov ,  Paul Dixon ,  Olivier Isson

IPC: H04L12/43

CPC classification number: H04B7/2656 ,  H04B3/54

Abstract: Within a domain of a master device, devices that share a power line as a communications medium monitor signal detection windows to sense network status. The devices transmit sensed network status to the master device. The master device allocates channel resources based on the network statuses communicated by the devices within the domain.

Abstract translation: 在主设备的领域内，共享电力线作为通信介质的设备监视信号检测窗口以感测网络状态。 设备将感测到的网络状态发送到主设备。 主设备根据域内设备传送的网络状态分配信道资源。

公开(公告)号：US08913607B2

公开(公告)日：2014-12-16

申请号：US13739857

申请日：2013-01-11

Applicant: STMicroelectronics, Inc. ,  STMicroelectronics S.r.l.

Inventor： Liwen Chu ,  George Vlantis ,  Vincenzo Scarpa

IPC: H04L12/28 ,  H04L12/50 ,  H04W84/18 ,  H04W72/12 ,  H04W84/12 ,  H04W84/22

CPC classification number: H04W48/14 ,  H04W40/34 ,  H04W48/08 ,  H04W72/02 ,  H04W72/1252 ,  H04W84/12 ,  H04W84/18 ,  H04W84/22 ,  Y02D70/142 ,  Y02D70/22

Abstract: The addition of high throughput capability elements to beacon frames and peer link action frames in wireless mesh networks enable the utilization of desirable features without further modifications to the network. Rules can be established for high throughput mesh point protection in a mesh network, Space-time Block Code (STBC) operations and 20/40 MHz operation selections. However, features such as PSMP (power save multi-poll) and PCO (phased coexistence operations) are barred from implementation to prevent collisions.

Abstract translation: 在无线网状网络中向信标帧和对等链路动作帧添加高吞吐量能力元素使得能够利用所需特征而无需进一步修改网络。 可以为网格网络中的高吞吐量网格点保护，空时块代码（STBC）操作和20/40 MHz操作选择建立规则。 然而，PSMP（省电多轮询）和PCO（分阶段共存操作）等功能被禁止实施以防止冲突。