公开(公告)号：US11446699B2

公开(公告)日：2022-09-20

申请号：US16877129

申请日：2020-05-18

Applicant: ASM IP Holding B.V.

Inventor： Viljami J. Pore ,  Marko Tuominen ,  Hannu Huotari

IPC: C23C16/455 ,  B05D1/00 ,  H01L51/00

Abstract: Methods and apparatus for vapor deposition of an organic film are configured to vaporize an organic reactant at a first temperature, transport the vapor to a reaction chamber housing a substrate, and maintain the substrate at a lower temperature than the vaporization temperature. Alternating contact of the substrate with the organic reactant and a second reactant in a sequential deposition sequence can result in bottom-up filling of voids and trenches with organic film in a manner otherwise difficult to achieve.

公开(公告)号：US11437241B2

公开(公告)日：2022-09-06

申请号：US17221944

申请日：2021-04-05

Applicant: ASM IP Holding B.V.

Inventor： Fei Wang ,  Woo Jung Shin

IPC: H01L21/306 ,  H01L21/3065

Abstract: An apparatus and methods for selectively etching a particular layer are disclosed. The apparatus and methods are directed towards maintaining the etch rate of the particular layer, while keeping intact a non-etched layer. A gas mixture may be flowed onto the substrate in separate loops having an oxide layer and an oxynitride layer as an etch layer and a nitride layer as a non-etched layer, for example. A reaction between the resulting gas mixture and the particular layer takes place, resulting in etching of the oxide layer and the oxynitride layer while maintaining the nitride layer in the above example.

公开(公告)号：US11411088B2

公开(公告)日：2022-08-09

申请号：US17026510

申请日：2020-09-21

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Peng-Fu Hsu ,  Michael Eugene Givens ,  Qi Xie

IPC: H01L29/40 ,  H01L21/02 ,  H01L21/28 ,  H01L29/66 ,  C23C16/40 ,  H01L29/51 ,  H01L29/78 ,  H01L29/161

Abstract: Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

公开(公告)号：US11410851B2

公开(公告)日：2022-08-09

申请号：US16936950

申请日：2020-07-23

Applicant: ASM IP Holding B.V.

Inventor： Katja Väyrynen ,  Mikko Ritala ,  Markku Leskelä

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/04 ,  C23C16/18 ,  H01L21/768

Abstract: Methods for forming a metallic film on a substrate by cyclical deposition are provided. In some embodiments methods may include contacting the substrate with a first reactant comprising a non-halogen containing metal precursor comprising at least one of copper, nickel or cobalt and contacting the substrate with a second reactant comprising a hydrocarbon substituted hydrazine. In some embodiments related semiconductor device structures may include at least a portion of a metallic interconnect formed by cyclical deposition processes.

公开(公告)号：US11387137B2

公开(公告)日：2022-07-12

申请号：US14447383

申请日：2014-07-30

Applicant: ASM IP Holding B.V.

Inventor： Ravinder Aggarwal ,  Robert C. Haro

IPC: H01L21/687 ,  H01L21/67 ,  C23C16/458 ,  H05B6/10

Abstract: A self-centering susceptor ring assembly is provided. The susceptor ring assembly includes a susceptor ring support member and a susceptor ring supported on the susceptor ring support member. The susceptor ring support member includes at least three pins extending upwardly relative to the lower inner surface of the reaction chamber. The susceptor ring includes at least three detents formed in a bottom surface to receive the pins from the susceptor ring support member. The detents are configured to allow the pins to slide therewithin while the susceptor ring thermally expands and contracts, wherein the detents are sized and shaped such that as the susceptor ring thermally expands and contracts the gap between the susceptor ring and the susceptor located within the aperture of the susceptor ring remains substantially uniform about the entire circumference of the susceptor, and thereby maintains the same center axis.

公开(公告)号：US11387106B2

公开(公告)日：2022-07-12

申请号：US17094049

申请日：2020-11-10

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka

IPC: H01L21/285 ,  H01L29/49 ,  C23C16/18 ,  C23C16/455 ,  H01L23/532 ,  H01L21/768

Abstract: A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a metalorganic precursor, the metalorganic precursor comprising a metal selected from the group consisting of a cobalt, nickel, tungsten, molybdenum, manganese, iron, and combinations thereof. The method may also include; contacting the substrate with a second vapor phase reactant comprising ruthenium tetroxide (RuO4); wherein the ruthenium-containing film comprises a ruthenium-metal alloy. Semiconductor device structures including ruthenium-metal alloys deposited by the methods of the disclosure are also disclosed.

公开(公告)号：US20220195595A1

公开(公告)日：2022-06-23

申请号：US17554253

申请日：2021-12-17

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Jaakko Anttila

IPC: C23C16/448

Abstract: The current disclosure relates to a precursor capsule for holding a precursor for a vapor deposition process. The precursor capsule comprises a vapor-permeable shell configured to define a precursor space, and to allow precursor in vapor form to leave the precursor capsule under vaporization conditions. The disclosure further relates to a precursor vessel comprising capsules according to the current disclosure, to a vapor deposition apparatus and a method.

公开(公告)号：US11367613B2

公开(公告)日：2022-06-21

申请号：US16987961

申请日：2020-08-07

Applicant: ASM IP Holding B.V.

Inventor： Shang Chen ,  Viljami Pore ,  Ryoko Yamada ,  Antti Juhani Niskanen

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/34 ,  C23C16/455

Abstract: Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, deposited silicon nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment.

公开(公告)号：US11365478B2

公开(公告)日：2022-06-21

申请号：US16565516

申请日：2019-09-10

Applicant: ASM IP Holding B.V.

Inventor： Hannu Huotari ,  Tom E. Blomberg

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/52

Abstract: The present invention relates generally to methods and apparatus for the controlled growing of material on substrates. According to embodiments of the present invention, a precursor feed is controlled in order to provide an optimal pulse profile. This may be accomplished by splitting the feed into two paths. One of the paths is restricted in a continuous manner. The other path is restricted in a periodic manner. The output of the two paths converges at a point prior to entry of the reactor. Therefore, a single precursor source is able to fed precursor in to a reactor under two different conditions, one which can be seen as mimicking ALD conditions and one which can be seen as mimicking CVD conditions. This allows for an otherwise single mode reactor to be operated in a plurality of modes including one or more ALD/CVD combination modes. Additionally, the pulse profile of each pulse can be modified. The pulse profile can be modified to create a low or very low partial pressure pulse profile at the beginning of a pulse.

公开(公告)号：US11362222B2

公开(公告)日：2022-06-14

申请号：US17087924

申请日：2020-11-03

Applicant: ASM IP HOLDING B.V.

Inventor： Tom E. Blomberg ,  Hannu Huotari

IPC: H01L31/0232 ,  H01L31/032 ,  H01L31/062 ,  H01L31/072 ,  C23C14/06 ,  C23C16/455 ,  C23C16/30 ,  H01L31/18 ,  H01L33/00 ,  H01L33/58 ,  C23C16/22

Abstract: Deposition processes are disclosed herein for depositing thin films comprising a dielectric transition metal compound phase and a conductive or semiconducting transition metal compound phase on a substrate in a reaction space. Deposition processes can include a plurality of super-cycles. Each super-cycle may include a dielectric transition metal compound sub-cycle and a reducing sub-cycle. The dielectric transition metal compound sub-cycle may include contacting the substrate with a dielectric transition metal compound. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant. The thin film may comprise a dielectric transition metal compound phase embedded in a conductive or semiconducting transition metal compound phase.