公开(公告)号：US11359302B2

公开(公告)日：2022-06-14

申请号：US17126275

申请日：2020-12-18

Applicant: ASM IP Holding B.V.

Inventor： Ippei Yanagisawa

IPC: C25D11/24 ,  C25D11/16 ,  H05B6/10 ,  C25D17/16 ,  C25D21/12

Abstract: Examples of a susceptor for supporting a substrate includes a base metal formed of aluminum or a material containing aluminum, an anodized layer covering a surface of the base metal and having cracks therein, and a CF coating of polymer provided in the cracks such that the exposure of the base metal is avoided.

公开(公告)号：US11339476B2

公开(公告)日：2022-05-24

申请号：US17039874

申请日：2020-09-30

Applicant: ASM IP Holding B.V.

Inventor： Naoto Tsuji ,  Ippei Yanagisawa ,  Miho Shimotori ,  Makoto Igarashi

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/505 ,  C23C16/455 ,  C23C16/54

Abstract: Examples of a substrate processing device include an annular distribution ring, a plurality of connection plates continued to the distribution ring and having non-uniform impedances, a shower plate electrically connected to the plurality of connection plates, and a stage provided below the shower plate so as to face the shower plate.

公开(公告)号：US20220119961A1

公开(公告)日：2022-04-21

申请号：US17646274

申请日：2021-12-28

Applicant: ASM IP HOLDING B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma ,  Suvi Haukka ,  Marko Tuominen ,  Chiyu Zhu

IPC: C23F4/02 ,  C23F1/12 ,  H01L21/3213 ,  C09K13/00 ,  H01L21/311 ,  C09K13/08 ,  C09K13/10 ,  H01J37/32 ,  H01L21/3065

Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

公开(公告)号：USD948463S1

公开(公告)日：2022-04-12

申请号：US29679620

申请日：2019-02-07

Applicant: ASM IP Holding B.V.

Designer： Seung Hwan Lee ,  Hak Yong Kwon ,  Jong Su Kim ,  Sung Bae Kim ,  Ju Hyuk Park

公开(公告)号：US20220108915A1

公开(公告)日：2022-04-07

申请号：US17491684

申请日：2021-10-01

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Viljami Pore ,  Tommi Paavo Tynell ,  Yu Xu ,  Mikko Ruoho

IPC: H01L21/768 ,  H01L21/02 ,  H01J37/32

Abstract: The current disclosure relates to methods of depositing silicon-containing material on a substrate comprising a gap, wherein the method comprises providing the substrate in a reaction chamber and depositing a carbon-containing inhibition layer on the substrate, and depositing silicon-containing material on the substrate. Depositing the inhibition layer comprises supplying a carbon precursor comprising carbon in the reaction chamber and supplying first plasma in the reaction chamber to form a first reactive species from the carbon precursor for forming the inhibition layer on the substrate. The inhibition layer is deposited preferentially in the vicinity of the top of the gap. The disclosure further relates to methods of forming a structure, methods of manufacturing a device and to a semiconductor processing apparatus.

公开(公告)号：US20220102195A1

公开(公告)日：2022-03-31

申请号：US17544982

申请日：2021-12-08

Applicant: ASM IP Holding B.V.

Inventor： Viljami Pore ,  Zecheng Liu

IPC: H01L21/762 ,  H01L21/67 ,  H01J37/32 ,  H01L29/06

Abstract: There is provided a method of filling one or more recesses by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, introducing a second reactant to the substrate with a second dose, wherein the first and the second doses overlap in an overlap area where the first and second reactants react and leave an initially substantially unreacted area where the first and the second areas do not overlap; introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant to form deposited material; and etching the deposited material. An apparatus for filling a recess is also disclosed.

公开(公告)号：US20220102190A1

公开(公告)日：2022-03-31

申请号：US17481979

申请日：2021-09-22

Applicant: ASM IP Holding B.V.

Inventor： HeeSung Kang

IPC: H01L21/764

Abstract: A substrate processing method of easily forming an air gap includes: forming a first insulating layer having a first step coverage on a patterned structure including a first protrusion and a second protrusion; and forming, on the first insulating layer, a second insulating layer having a second step coverage lower than the first step coverage, wherein an air gap is formed between the first protrusion and the second protrusion by repeating the forming of the second insulating layer.

公开(公告)号：US20220076986A1

公开(公告)日：2022-03-10

申请号：US17467250

申请日：2021-09-05

Applicant: ASM IP Holding B.V.

Inventor： Dongyang Chen

IPC: H01L21/687

Abstract: A method of replacing an end effector for wafer handling in a semiconductor processing system includes fixing a first end effector jig to a first stage and a second end effector jig to a second stage of the load lock module; positioning a first end effector at the first end effector jig and a second end effector at the second end effector jig, the second end effector fixed relative to the first end effector; and fixing the second end effector to the second end effector jig. The first end effector is replaced with a replacement end effector and the semiconductor processing system returned to production without re-teaching placement of the replacement end effector in a processing module connected to a wafer handling module mounting the end effectors. Semiconductor processing systems and end effector jigs for replacing end effectors in semiconductor processing systems are also described.

公开(公告)号：US20220064795A1

公开(公告)日：2022-03-03

申请号：US17408940

申请日：2021-08-23

Applicant: ASM IP Holding B.V.

Inventor： Takashi Yoshida ,  René Vervuurt

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52

Abstract: Methods of forming metal silicon oxide layers and metal silicon oxynitride layers are disclosed. Exemplary methods include providing a silicon precursor to the reaction chamber for a silicon precursor pulse period, providing a first metal precursor to the reaction chamber for a first metal precursor pulse period, and providing a first reactant to the reaction chamber for a first reactant pulse period, wherein the silicon precursor pulse period and the first metal precursor pulse period overlap.

公开(公告)号：US11251068B2

公开(公告)日：2022-02-15

申请号：US16601593

申请日：2019-10-15

Applicant: ASM IP Holding B.V.

Inventor： JaeMin Roh ,  DaeYoun Kim ,  Julll Lee ,  ChangMin Lee

IPC: H01L21/687 ,  H01L21/68 ,  H01J37/32

Abstract: A substrate processing apparatus capable of improving thin film uniformity on a substrate by controlling the position of a substrate supporting apparatus includes a plurality of reactors, wherein each of the reactors includes a substrate supporting apparatus; a ring surrounding the substrate supporting apparatus; and an alignment device for moving the substrate supporting apparatus, wherein the ring is installed such that one surface of the ring comes in contact with the substrate supporting apparatus as the substrate supporting apparatus moves and the ring is movable by a pushing force of the substrate supporting apparatus.